EXPERIMENT 10: SCHOTTKY DIODE CHARACTERISTICS
OBJECTIVE:
1. To plot forward and reverse characteristics of the Schottky diode (Metal
Semiconductor junction)
2. Compare the Schottky diode (1N5822) with the normal p-n diode (1N4007)
APPARATUS/COMPONENTS:
D.C. Supply, Current limiting resistor 1KΩ, Diode IN5822, IN 4007, Digital Multimeter,
Ammeter, signal generator, and DSO.
CIRCUIT DIAGRAM:
THEORY:
The Schottky diode junction is formed by plating a very pure metal, typically by evaporation
or sputtering while under vacuum, onto a wafer that has been doped with either p-type or n-
type dopant atoms. As soon as these materials are brought into contact and thermal equilibrium
is established, their Fermi levels become equal. Electrons from the semiconductor lower their
energy level by flowing into the metal. Charge accumulates at the interface, distorting the
energy bands in the semiconductor. This creates an energy barrier, known as the Schottky
barrier, which prevents more electrons from flowing from the n-type material into the metal
without assistance from an external energy source of the correct polarity to elevate their energy
above that of the Schottky barrier height. External energy of the opposite polarity increases the
barrier height, thus preventing conduction.
When metal is brought into contact with an n-type semiconductor during fabrication of the
chip, electrons diffuse out of the semiconductor into the metal, leaving a region known as the
“depletion layer” under the contact that has no free electrons.
This region contains donor atoms that are positively charged because each lost its excess
electron. This charge makes the semiconductor positive with respect to the metal. Diffusion
continues until the semiconductor is so positive with respect to the metal that no more electrons
can go into the metal. The internal voltage difference between the metal and the semiconductor
is called the contact potential, and is usually in the range 0.3 – 0.6 V for typical Schottky diodes.
When a positive voltage is applied to the metal, the internal voltage is reduced, and
electrons can flow into the metal. Only those electrons whose thermal energy happens to be
many times the average can escape, and these “hot electrons” account for all the forward
current from the semiconductor into the metal.
The voltage-current relationship for a barrier diode is described by the law of the junction
equation. Schottky diodes are fabricated with n-type doping only. The current across a metal-
semiconductor (Schottky) junction is mainly due to majority carriers. The equation that relates
the current through a Schottky junction to the voltage across it is:
Barrier height is a design variable for a Schottky diode, whereas it is fixed for a pn
junction. This is another advantage of a Schottky junction relative to a pn junction: a Schottky
junction can have significantly lower forward voltage at a given forward current than a
comparable pn junction. A Schottky diode is a virtually ideal rectifier whose forward voltage
can be selected by design. This makes Schottky diodes very well-suited for use as power
detectors, especially at very low signal levels, and is widely utilized in frequency mixing and
RF power detection circuits. One important thing to note is that there is no flow of minority
carriers from the metal into the semiconductor. Therefore, if the forward voltage is removed,
current stops within a few picoseconds and reverse voltage can be established in this time.
There is no delay effect due to charge storage as in junction diodes. This accounts for the
predominant use of surface barrier diodes in microwave mixers, where the diode must switch
conductance states at the rate of the frequency of a microwave local oscillator.
PROCEDURE:
Part A :
1. Connect the Schottky diode in the forward bias mode as per the given circuit.
2. Connect a current limiting resistor in series with the diode.
3. Slowly increase the voltage applied, and measure the current (I) through the diode.
4. Now connect the Schottky diode in reverse bias mode and measure current through the
diode.
5. Plot current (I) vs forward voltage across the diode on graph paper.
6. Calculate the cut-in voltage of the Schottky diode from I-V
curve.
Part B :
Similarly, connect the normal p-n diode and compare cut-in voltage, ISAT of Schottky diode
and normal p-n diode. Observe both diode characteristics in DSO (X-Y mode)
Part C:
1. Connect 2 Vpp , 1Khz sine wave input to the half wave rectifier ckt including
Schottky diode and a series resistor of 1KΩ.
2. Similarly, connect 2 Vpp , 1Khz sine wave input to the half wave rectifier ckt
including normal p-n diode and a series resistor of 1KΩ
3. Slowly increase the frequency to higher values , and observe exactly till what
frequency the normal p-n diode rectifier is able to maintain its rectifying property.
4. Similarly, increase frequency to higher values for Schottky diode rectifier. Check
whether Schottky diode rectifier able to maintain rectification process for higher
frequencies or not!!!.
5. Note down frequency at which normal p-n diode unable to maintain rectification
process.
OBSERVATIONS:
1. V- I Characteristics of Schottky Diode and normal p-n diode in forward bias and
reverse bias.
2. Observe both diode characteristics in DSO (X-Y mode)
3. Note down the frequency at which the normal p-n diode is unable to maintain
rectification process.
Sr. Supply Voltage (V) ID (µA)
No.
10
PRECAUTIONS:
RESULTS:
CONCLUSION:
