PK6A6BA

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

40V 8mΩ @VGS = 10V 42A

PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Tc = 25 °C 42
Continuous Drain Current ID
Tc = 100 °C 26.6
1 IDM
Pulsed Drain Current 100
A
TA = 25 °C 11
Continuous Drain Current ID
TA= 70 °C 9
Avalanche Current IAS 33.7
Avalanche Energy L =0.1mH EAS 56.8 mJ
TC = 25 °C 31
Power Dissipation PD W
TC = 100 °C 12.5
TA = 25 °C 2.3
Power Dissipation PD W
TA = 70 °C 1.5
Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient RqJA 54
°C / W
Junction-to-Case RqJC 4
1
Pulse width limited by maximum junction temperature.
2
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.

REV 1.0 1 2015/1/6

PK6A6BA
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
V(BR)DSS VGS = 0V, ID = 250mA 40
Voltage V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.3 1.8 2.3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
Zero Gate Voltage Drain VDS = 32V, VGS = 0V 1
IDSS mA
Current VDS = 30V, VGS = 0V, TJ = 55 °C 10
Drain-Source On-State VGS = 4.5V, ID = 11A 6.4 12
RDS(ON) mΩ
Resistance1 VGS = 10V , ID = 11A 5.5 8
Forward Transconductance1 gfs VDS = 5V, ID = 11A 55 S
DYNAMIC
Input Capacitance Ciss 1672
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 206 pF
Reverse Transfer Capacitance Crss 124
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω
VGS =10V 34
Total Gate Charge2 Qg
VGS =4.5V VDS = 15V, 18
nC
Gate-Source Charge2 Qgs VGS = 10V, ID = 11A 5.1
Gate-Drain Charge2 Qgd 8.3
2 td(on)
Turn-On Delay Time 25
2 tr
Rise Time VDS = 15V, 11
nS
Turn-Off Delay Time 2 td(off) ID @ 11A, VGS = 10V, RGEN = 6Ω 41
Fall Time2 tf 12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 24 A
1 VSD IF = 11A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 19.5 nS
IF = 11A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 9.4 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.0 2 2015/1/6

PK6A6BA
N-Channel Enhancement Mode MOSFET

REV 1.0 3 2015/1/6

PK6A6BA
N-Channel Enhancement Mode MOSFET

REV 1.0 4 2015/1/6

PK6A6BA
N-Channel Enhancement Mode MOSFET

REV 1.0 5 2015/1/6