SMD Type Diodes

Rectifier Diodes
1N4001 ~ 1N4007

DO-214AC(SMA) Unit: mm

4.597 4.32
3.988 4.12
Ƶ Features 2.126
1.397

ƽ Low forward voltage drop 2 1

2.896 2.22
2.489 2.02

ƽ High current capability

5.668 2.75
2.55
4.925
ƽ Easy pick and place 5.87
5.67

ƽ High surge current capability Recommended

Land Pattern
2.438
ƽ Plastic material used carries Underwriters 1.981

Laboratory Classification 94V-0

1.524 0.203 0.305
0.762 0.051 0.152

Ƶ Absolute Maximum Ratings Ta = 25ć

1N 1N 1N 1N 1N 1N 1N
Parameter Symbol Unit
4001 4002 4003 4004 4005 4006 4007
Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000
RMS Voltage VRMS 35 70 140 280 420 560 700
V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000
Forward Voltage @ 1A VF 1.1
Averaged Forward [Link]=100ć IFAV 1
A
Peak Forward Surge Current @ 8.3ms IFSM 40 30
Maximum DC Reverse Current Ta=25ć 5
IR ȝA
Ta=125ć 50
Maximum Reverse Current *1 trr 1.5 us
Typical Junction Capacitance *2 Cj 12 pF
Thermal Resistance Junction to Ambient RșJA 75 85
ć/W
Thermal Resistance Junction to Lead *3 RșJL 27 30
Junction Temperature Tj 150
ć
Storage Temperature Tstg -55 to 150

* 1 Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

* 2 Measured at 1 MHz and Applied VR=4.0 V

Ƶ Marking
NO. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Marking M1 M2 M3 M4 M5 M6 M7

1
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 SMD Type Diodes

Rectifier Diodes
1N4001 ~ 1N4007
Ƶ Typical Characterisitics

FIG.1- MAXIMUM FORWARD CURRENT DERATING FIG.2- TYPICAL REVERSE CHARACTERISTICS

CURVE
1.2 100
AVERAGE FORWARD CURRENT. (A)

1.0

0.8

INSTANTANEOUS REVERSE CURRENT. ( A)

10

0.6

0.4
1 Tj=125 0C
0.2

0 Tj=75 0C
0 20 40 60 80 100 120 140 160
o 0.1
LEAD TEMPERATURE. ( C)
Tj=25 0C

FIG.3- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT 0.01
100
PEAK FORWARD SURGE CURRENT. (A)

50
0.001
0 20 40 60 80 100 120 140
20 1N40 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
0 1 -1
N400
6
10
1N4007

8.3ms Single FIG.5- TYPICAL FORWARD CHARACTERISTICS

2 Half Sine Wave 100
Tj=Tj max
1 50
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz 20
INSTANTANEOUS FORWARD CURRENT. (A)

10
FIG.4- TYPICAL JUNCTION CAPACITANCE
100 5

2
50 Tj=25 0C
JUNCTION CAPACITANCE.(pF)

f=1.0MHz 1
Vsig=50mVp-p
20 0.5

10 0.2

0.1
5
0.05

2 0.02

0.01
1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.01 0.1 1 10 100
REVERSE VOLTAGE. (V) FORWARD VOLTAGE. (V)

FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50 10
NONINDUCTIVE NONINDUCTIVE trr
+0.5A

(-)
DUT
(+) PULSE 0
50Vdc GENERATOR
(approx) (NOTE 2) -0.25A
(-)
OSCILLOSCOPE
NON (NOTE 1) (+)
INDUCTIVE

NOTES: 1. Rise Time=7ns max. Input Impedance= -1.0A

1 megohm 22pf 1cm
2. Rise Time=10ns max. Sourse Impedance= SET TIME BASE FOR
50 ohms 5/ 10ns/ cm

2
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