FDB1D7N10CL7

N-Channel Shielded Gate

POWERTRENCH) MOSFET
100 V, 268 A, 1.7 mW
Description
This N−Channel MOSFET is produced using ON Semiconductor’s www.onsemi.com
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized to minimize on−state VDS ID MAX rDS(on) MAX
resistance and yet maintain superior switching performance with best
in class soft body diode. 100 V 268 A 1.7 mΩ

Features
• Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A D (Pin4, tab)

• Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A

• Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A
• Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A
• 50% Lower Qrr than Other MOSFET Suppliers G (Pin1)
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
S (Pin2, 3, 5, 6, 7)
• 100% UIL Tested
N−Channel MOSFET
Applications
• Industrial Motor Drive 1. Gate
4
• Industrial Power Supply 2. Source
3. Source
• Industrial Automation 4. Drain
5. Source
• Battery Operated Tools
12 6. Source
• Battery Protection 3
56
7. Source
7
• Solar Inverters
D2PAK7 (TO−263 7 LD)
• UPS and Energy Inverters CASE 418AY
• Energy Storage
• Load Switch
MARKING DIAGRAM
MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol Parameter Ratings Unit
VDS Drain to Source Voltage 100 V $Y&Z&3&K
FDB
VGS Gate to Source Voltage ±20 V 1D7N10CL7
ID Drain Current 268 A
Continuous (TC = 25°C) (Note 5)
190
Continuous (TC = 100°C) (Note 5)
Pulsed (Note 4) 1390 $Y = ON Semiconductor Logo
&Z = Assembly Plant Code
EAS Single Pulsed Avalanche Energy 595 mJ &3 = Numeric Date Code
(Note 3)
&K = Lot Code
PD Power Dissipation 250 W FDB1D7N10CL7 = Specific Device Code
TC = 25°C
TA = 25°C (Note 1a) 3.8
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
TJ, TSTG Operating and Storage Temperature −55 to +175 °C
this data sheet.
Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number:

April, 2018 − Rev. 2 FDB1D7N10CL7/D
 FDB1D7N10CL7

THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RqJC Thermal Resistance, Junction to Case (Note 1) 0.6 _C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1a) 40

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 − − V
DBVDSS/DTJ Breakdown Voltage Temperature ID = 250 μA, referenced to 25°C − 57 − mV/_C
Coefficient

IDSS Zero Gate Voltage Drain Current Zero VDS = 80 V, VGS = 0 V − − 1 mA

Gate Voltage Drain Current
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 700 μA 2.0 3.1 4.0 V
VGS(th)/DTJ Gate to Source Threshold Voltage ID = 700 μA, referenced to 25°C − −9 − mV/_C
Temperature Coefficient
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 100 A − 1.5 1.75 mW
VGS = 12 V, ID = 100 A − 1.4 1.7
VGS = 15 V, ID = 100 A − 1.33 1.65
VGS = 6 V, ID = 63 A − 2.2 4.4
VGS = 10 V, ID = 100 A, TJ= 150°C − 2.65 3.1
gFS Forward Transconductance VDS = 5 V, ID = 100 A − 237 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz − 8285 11600 pF
Coss Output Capacitance − 5025 7035 pF
Crss Reverse Transfer Capacitance − 50 80 pF
Rg Gate Resistance 0.1 0.8 1.6 Ω
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = 50 V, ID = 100 A, − 39 63 ns
VGS = 10 V, RGEN = 6 Ω
tr Rise Time − 33 53 ns
td(off) Turn−Off Delay Time − 85 136 ns
tf Fall Time − 36 58 ns
Qg Total Gate Charge VGS = 0 V to 10 V − 116 163 nC
Qg Total Gate Charge VGS = 0 V to 6 V VDD = 50 V, − 74 104 nC
ID = 100 A
Qgs Gate to Source Gate Charge − 37 − nC
Qgd Gate to Drain “Miller” Charge − 24 − nC
Qoss Output Charge VDD = 50 V, VGS = 0 V − 333 − nC
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Continuous Drain to Source Diode Forward Current − − 268 A
ISM Pulsed Drain to Source Diode Forward Current − − 1390 A
VSD Source to Drain Diode Forward VGS = 0 V, IS = 100 A (Note 2) − 0.9 1.2 V
Voltage

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 FDB1D7N10CL7

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
SOURCE-DRAIN DIODE CHARACTERISTICS
trr Reverse Recovery Time IF = 50 A, di/dt = 300 A/μs − 63 101 ns
Qrr Reverse Recovery Charge − 186 298 nC
trr Reverse Recovery Time IF = 50 A, di/dt = 1000 A/μs − 82 132 ns
Qrr Reverse Recovery Charge − 869 1390 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper.
b) 62.5°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 595 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 63 A, VDD = 90 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 91 A.
4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Reel Size Tape Width Quantity
FDB1D7N10CL7 FDB1D7N10CL7 D2−PAK−7L 330 mm 24 mm 800 Units

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 FDB1D7N10CL7

TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)

320 9
VGS = 10 V PULSE DURATION = 80 m s
280 8 DUTY CYCLE = 0.5% MAX
VGS = 6.5 V
7

Source ON−Resistance
240

Normalized Drain to
ID, Drain Current (A)

VGS = 5 V
VGS = 6 V 6
200 VGS = 5.5 V
5
160 PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX 4
120 VGS = 6 V
VGS = 5.5 V 3
80 2
40 1
VGS = 5 V
VGS = 6.5 V VGS = 10 V
0 0
0 1 2 3 4 5 0 40 80 120 160 200 240 280 320

VDS, Drain-Source Voltage (V) ID, Drain Current (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

2.2 10
ID = 100 A PULSE DURATION = 80 m s
2.0 DUTY CYCLE = 0.5% MAX
VGS = 10 V
8
Source ON−Resistance

RDS(on), Drain to Source

Normalized Drain to

1.8 ID = 100 A
ON−Resistance (mW)

1.6 6
1.4

1.2 4 TJ = 150 oC

1.0
2
0.8
TJ = 25 oC
0.6 0
−75 −50 −25 0 25 50 75 100 125 150 175 3 6 9 12 15

TJ, Junction Temperature (5C) VGS, Gate to Source Voltage (V)

Figure 3. Normalized On−Resistance Figure 4. On−Resistance vs. Gate to Source Voltage

vs. Junction Temperature

320 320
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX 100 VGS = 0 V
280
IS, Reverse Drain Current (A)

VDS = 5 V
240
ID, Drain Current (A)

10
200 TJ = 175 oC

160 TJ = 175 oC 1
TJ = 25 oC TJ = 25 oC
120 0.1

80 TJ = −55oC
TJ = −55 oC 0.01
40

0 0.001
2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS, Gate to Source Voltage (V) VSD, Body Diode Forward Voltage (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs. Source Current

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 FDB1D7N10CL7

TYPICAL CHARACTERISTICS (Continued)

(TJ = 25°C unless otherwise noted)

10 100000
ID = 100 A VDD = 50 V
Ciss
VGS, Gate to Source Voltage

8 10000
Coss

Capacitance (pF)
VDD = 25 V
6 1000
VDD = 75 V

4 100
Crss

2 10
f = 1 MHz
VGS = 0 V
0 1
0 30 60 90 120 0.1 1 10 100

Qg, Gate Characteristics VDS, Drain to Source Voltage (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain

to Source Voltage

200 300
o
RqJC = 0.6 C/W
100
250
IAS, Avalanche Current (A)

VGS = 10 V
ID, Drain Current (A)

TJ = 25 oC 200

150
10
VGS = 6 V
100
TJ = 150 oC
50

1 0
0.001 0.01 0.1 1 10 100 1000 25 50 75 100 125 150 175

tAV, Time in Avalanche (ms) TC, Case Temperature (5C)

Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current
vs. Case Temperature

20000 100000
10000 SINGLE PULSE
P(PK), Peak Transient Power (W)

1 ms RqJC = 0.6 oC/W

1000 5 ms TC = 25 oC
ID, Drain Current (A)

10 m s 10000
100
THIS AREA IS
LIMITED BY rDS(on) 100 m s
10
SINGLE PULSE
1000
1 ms
TJ = MAX RATED
1 10 ms
RqJC = 0.6 oC/W CURVE BENT TO 100 ms
TC = 25 oC MEASURED DATA
0.1 100
0.1 1 10 100 400 10
−5
10
−4 −3
10 10
−2
10
−1
1

VDS, Drain to Source Voltage [V] t, Pulse Width (sec)

Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation

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 FDB1D7N10CL7

TYPICAL CHARACTERISTICS (Continued)

(TJ = 25°C unless otherwise noted)

2 DUTY CYCLE−DESCENDING ORDER

1
Transient Thermal Resistance

D = 0.5
0.2
PPDM
r(t), Normalized

0.1 DM

0.1 0.05
0.02
0.01 t1t1
t2t2
SINGLE PULSE Notes:
NOTES:
0.01 ZqJCZ(t) =(t)r(t)
qJC
× RxqJC
= r(t) RqJC
RqJCR= 0.6°C/W
qJC = 0.6 C/W
o

PeakPeak
TJ =TJP=DM × ZxqJC
PDM ZqJC (t)(t)++TTCC
DutyDuty
Cycle,Cycle,
D =Dt1= /t1t2/ t2

0.001
10−5 10−4 10−3 10−2 10−1 100
t, Rectangular Pulse Duration (s)

Figure 13. Normalized Max Junction to Case Transient Thermal Response Curve

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

D2PAK7 (TO−263 7 LD)

CASE 418AY
ISSUE C
DATE 15 JUL 2019

GENERIC
MARKING DIAGRAM*

XXXXXXXXX
AYWWG

XXXX = Specific Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13798G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: D2PAK7 (TO−263 7 LD) PAGE 1 OF 1

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