FINFETS
FINFET
• A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-
semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or
four sides of the channel or wrapped around the channel, forming a double or even multi gate
structure. These devices have been given the generic name "FinFETs" because the source/drain
region forms fins on the silicon surface. A FinFET is a transistor. Being a transistor, it is an
amplifier and a switch.
• FinFET stands for a fin-shaped field-effect transistor. Fin because it has a fin-
shaped body – the silicon fin that forms the transistor’s main body distinguishes it.
Field-effect because an electric field controls the conductivity of the material.
• A FinFET is a non-planar device, i.e., not constrained to a single plane. It is also
called 3D for having a third dimension.
• FinFET is a type of non-planar transistor, or "3D" [Link] is the basis for
modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first
became commercialized in the first half of the 2010s, and became the dominant gate design at 14
nm, 10 nm and 7 nm and 3nm process nodes.
Working of finfet:
• In planar FET the Gate is placed above the channel and there is leakage current flowing from
source to drain even when the gate is off
• FinFET can have two to four fins in the same structure. In planar FET the Gate is placed above the
channel and there is leakage current flowing from source to drain even when the gate is off
• The 'fins' form the source and drain, they enable more volume than a traditional planar transistor.
• There is very little current to leak through the body when the device is in the 'off' state, which
allows the use of lower threshold voltages for better performance and lower power dissipation
• The gate orientation is at right angles to the vertical fin. And to traverse from one side of the fin to
the other it wraps over the fin.
• It enables it to interface with three side of the fin or channel.
• This form of gate structure provides improved electrical control over the channel conduction.
ADVANTAGES OF FINFETS
• FinFETs have significantly better performance.
• Very little current is allowed to leak.
• The FinFET can also be run at a lower operating voltage for a given leakage current.
• Better control over the channel.
• Lower static leakage current.
• Faster switching speed.
• Lower switching voltage
• Low power consumption
Disadvantages of finfet
• FinFETs are harder to manufacture and have more complex challenges
(design, reliability etc.)
• Costly
• Very high capacitance
• Corner effect: electric field at the corner is always amplified compared to the electric field at the
sidewall. This can be minimized using a nitrate layer in corners.
• High fabrication cost
Applications of finfet
• home computers
• laptops
• tablets
• Smartphones
• Wearables
• high-end networks
• Automotives.
Why finfet is used in place of MOSFETS:
• Choosing FinFET devices instead of traditional MOSFETs happens for a variety of reasons.
Increasing computational power implies increasing computational density. More transistors are
required to achieve this, which leads to larger chips. However, for practical reasons, it is crucial to
keep the area about the same.
• As previously stated, one way of achieving more computational power is by shrinking the
transistor’s size. But as the transistor’s dimensions decrease, the proximity between the drain and
the source lessens the gate electrode’s ability to control the flow of current in the channel region.
Because of this, planar MOSFETs display objectionable short-channel effects.
• Shrinking the gate length (Lg) below 90 nm produces a significant leakage current, and below 28 nm, the
leakage is excessive, rendering the transistor useless. So, as the gate length is scaled down, suppressing
the off‐state leakage is vital.
• Another way to increase computational power is by changing the materials used for manufacturing the
chips, but it may not be suitable from an economic standpoint.
• In short, FinFET devices display superior short-channel behavior, have considerably lower switching
times, and higher current density than conventional MOSFET technology
DIFFERENCES BETWEEN CMOS AND FinFET
CMOS Fin FET
➢ These are planar devices with metal oxide ➢ These are three-dimensional structures with
and semiconductors involved in their basic vertical fins forming a drain and source.
structure.
➢ The basic transistor constructions used. ➢ Multi-gate or tri-gate architectures.
➢ It has gate, drain, source regions. ➢ Conducting channel wrapped by a thin
silicon fin.
➢ The type of short-channel effect can cause ➢ The presence of fins gives better short
serious issues in MOSFETs. channel behavior.
➢ Leakage current and leakage voltages are ➢ Fin FETs are the devices with low leakage
responsible for leakage power in switching current, their power consumption is also
devices. less.
➢ The device drive strength is depends on the ➢ Fin FETs drive strength can be increased by
channel width. incorporating multiple or longer fins.
➢ Slow switching speed ➢ Faster switching speed.
THANKYOU
------RAGHU [STA ]
