SINoofQ P
N am e of the D epartm ent
N am e of Course
Nam e of the Paper:
Seme ster
Unique Paper Code
Duration · 2 hours
Max. Marks 60 marks
Instructions for Candidates:
'a) Write your Rq/1 No: 011 the top immediately 011.receipt oftl1is. quest/011 p~per.
b) Attempt a11y Four questio11s i11 all. Questio11 No. 1 is·compulsory. · ·
c) Simple non-programmable calculators are allowed. ·
1. Attempt all parts of the following:
(3X5=15)
a) In: a common emitter transistor configuration, the current amplification factor is 0.9. If
the emitter current-is .lmA and leakage current is assumed zero, determine the value of
the base cun·ent for the common base configuration. · ·
b) For what voltage will the reverse current in a Germanium pn junction diode reach 80%
of its· saturation value at room temperature?
= =
(Given r, 1, .k 1.38 ><'10-23 J/K ; q ;, 1.6 x 10-19C)
c) Why do we need positive feedback in designing oscillator ciruits.
dj Bxplain the role of coupling capacitor (Cc) and Emitter capacitor in (CE) based
transistor amplifier circuits. . .
e) An Op-Amp in open Ioop inverting configuration is driven by. a lkHz triangular wave
of 100 mV peak signal value, Draw the output waveform of the circuit with respect to
this input. ·
2. (I°0,5).
a) A transistor amplifier with . voltage divider biasing circuit has the following
. specifications = = =
Vee 22V,. R1 =:= 39kfl, R2 3.9kfl, Re 10kfl, RE 1,5/cfl, =
= =
Cm Cour lOµF, CE :;: SOµF and fi' = 140. Determine .the de bias voltages and
the quiescent point parameters. Also show the qulescent.polnt on the de load line for
the circuit. · · ·
. Vee
~N--11-------H
Cm
R2
b) Define the four h-parameters with reference to a CE transistor configuration. Explain -
how these parameters can be determined from the static characteristic curves of the -
configuration. . ,.
3. (5,10)
a) A sinusoidal peak-to~peak voltage of 60 sin lOOnt is applied to a full wave rectifier
with -load resistance of 500 .Q and forward diode resistance of 50 .Q. Find the ·
maximum DC current component, 111).S current component, PIV
diode, ripple factor and rectification efficiency. ·
o{
the semiconductor
b) Define line regulation and load regulation for a Zener diode based voltage,regulator.
. Explain with help of a circuit diagram the working of Zener diode as a voltage
regulator. Derive the relations for the minimum value of load resistance, .the
minimum and the maximum value of the supply voltage that.can be regulated by a
given Zener diode,
~ ·-.~~
a) Derive the expresson for the oscillation frequency'.of a transistor 'based Hartley
Oscillator.
=
b) A transistor based Colpitts oscillator has a frequency of oscillatio~f lOOkHz. If the
value of two of the frequency determining components is L ==·100mH and C ==
0.01µF. Determine the_yaltie ofthe third component. · 1
c) Calculate the frequency of.oscillation for the transistor based RC phase shift oscillator
havingRc =2kfl,R == 5kO. and C = 0.0'lµF. . .
5.. . (8,4,3) ·
a) Explain. the working of a ·basic ·differentiator circuit designed using Op-amp. Explain
differentiator. Explain the response curve for the circuit: · ·
a
the problems ~ssociated with the basic circuit and how they are rectified in practical
b) Design an pra~tical Op-amp integrator for the :fi·equency range from 1 to 10 kHz.
Choose the capacitor value as 0.1 µf. ·
c) Calculate the output voltage for an op-amp based inverting summing amplifier for the .
following sets of voltages and resistors: . .
(i) V
1
·= =
1 V, V2 a:: 2V, V3 3V, u, = = =
500k.U ]?2 tun R. . lMD. and R; 1M.Cl =
1Mfl
= 3
=
(ii)V1 = -2V, V2 = 3V, V3 ·= lV, R1 200k.Cl R2 SOOk.Cl R "'1Mfl and Rp
3 ·
=
-·
