Small IPM (Intelligent Power Module)

P633C Series
6MBP**XS*065-50
Application Manual

August 2023

MT6M16945
 Cautions
This Instruction contains the product specifications, characteristics, data, materials, and structures as of
August 2023. The contents are subject to change without notice for specification changes or other
reason. When using a product listed in this Instruction be sure to obtain the latest specifications.

The application examples in this note show the typical examples of using Fuji products and this note
shall neither assure to enforce the industrial property including some other rights nor grant the license.

Although Fuji Electric Co., Ltd. continually strives to enhance product quality and reliability, a small
percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor
products in your equipment, be sure to take adequate safety measures such as redundant, flame-
retardant and fail-safe design in order to prevent a semiconductor product failure from leading to a
physical injury, property damage or other problems.

The products described in this application manual are manufactured with the intention of being used in
the following industrial electronic and electrical devices that require normal reliability.
・ Compressor motor inverter
・ Fan motor inverter for room air conditioner
・ Compressor motor inverter for heat pump applications, etc.

If you need to use a semiconductor product in this application note for equipment requiring higher
reliability than normal, such as listed below, be sure to contact Fuji Electric Co., Ltd. to obtain prior
approval. When using these products, take adequate safety measures such as a backup system to
prevent the equipment from malfunctioning when a Fuji Electric’s product incorporated in the equipment
becomes faulty.
・Transportation equipment (mounted on vehicles and ships)
・Trunk communications equipment
・Traffic-signal control equipment
・Gas leakage detectors with an auto-shutoff function
・Disaster prevention / security equipment
・Safety devices, etc.

Do not use a product in this application note for equipment requiring extremely high reliability such as:
・Space equipment ・Airborne equipment ・Atomic control equipment
・Submarine repeater equipment ・Medical equipment

All rights reserved. No part of this application note may be reproduced without permission in writing from
Fuji Electric Co., Ltd.

If you have any question about any portion of this application note, ask Fuji Electric Co., Ltd. or its sales
agencies. Neither Fuji Electric Co., Ltd. nor its agencies shall be liable for any injury or damage caused
by any use of the products not in accordance with instructions set forth herein.

MT6M16945 © Fuji Electric Co., Ltd. All rights reserved. i

 Chapter 1 Product Outline

1. Introduction 1-2
2. Product Lineup 1-5
3. Definition of Type Name and Marking Spec 1-6
4. Outline Dimensions 1-8
5. Absolute Maximum Ratings 1-10

MT6M16945 © Fuji Electric Co., Ltd. All rights reserved. 1-1

 This manual describes the following contents for Fuji IGBT Intelligent Power Module “Small IPM”
• Product outline
• Explanation of terminal symbols and terminology
• Detailed description and design guidelines for control and power terminals
• Recommended wiring and layout, along with mounting guidelines

1. Introduction

<Product overview>
• IGBT modules used in inverters for compressors and air conditioner fans are developing rapidly in
response to the growing demand for energy saving, equipment miniaturization and weight reduction.
• IGBTs are devices that combine the high-speed switching performance of power MOSFETs and the
high-voltage, high-current capabilities of bipolar transistors, and are expected to further develop in
the future.
• Among them, the IPM (Intelligent Power Module) is a 3-phase IGBT inverter bridge circuit with
integrated gate drive circuits and protection circuits.

<Product concept>
• 7th gen. IGBT/FWD technology realize low loss and energy saving of equipment.
• Guaranteed Tvjop=150oC allows expansion of output current.
• High accuracy short-circuit protection detection expands the overload operation range.
• Compatible pin assignments, footprints, and mounting dimensions with conventional Small IPM.
• Product lineup of 650V/15A to 35A.
• Lower total loss against conventional products by improving the trade-off between Collector-Emitter
saturation voltage VCE(sat) and switching loss.
• Achieves low dv/dt and low switching loss compared to conventional products.

<Internal circuit>
• Optimally designed IGBT drive circuit.
• The high-side control IC (HVIC) contains a high-voltage level shift circuit.
• This product can be driven directly by MCU (microcontroller) on both the high-side and low-side
arms. The voltage level of the input signals are 3.3V or 5V.
• Since the wiring length between the internal drive circuit and IGBT is short and the impedance of
the drive circuit is low, no reverse bias power supply is required.
• Normally, IPM device requires a total of four isolated control power supplies: one for the lower sides
and three for the upper sides. However, since this IPM has built-in bootstrap diodes (BSD), isolated
power supplies for the high-sides are not needed.

MT6M16945 © Fuji Electric Co., Ltd. All rights reserved. 1-2

 Fig.1-1 Block Diagram of Internal Circuit

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 <Built-in protection circuits>
• The following built-in protection circuits are incorporated in the product:
OC: Over current protection
UV: Under voltage protection for power supplies of control IC
LT: Temperature sensor output function
OH: Overheating protection (only applied to some products)
FO: Fault alarm signal output

• The OC protection circuits protect the IGBT against over current, load short-circuit or arm short-
circuit.
• The protection circuit can monitor the emitter current using external shunt resistor in each low-side
IGBT and thus it can protect the IGBT against arm short-circuit.
• The UV protection circuit operates when the control power supply voltage drops below the trip
voltage level. It is built into all of the IGBT drive circuits.
• The OH protection circuit protects the product from overheating. The OH protection circuit is built
into the control IC of the low-side arm (LVIC).
• The temperature sensor output function is built into the LVIC and converts the detected temperature
into analog voltage output.
• The FO function outputs a fault signal when the circuit detects abnormal conditions, thus making it
possible to shut down the system reliably and preventing destruction by outputting the fault signal to
the microprocessor unit controlling the product.

<Compact package>
• This product uses high heat dissipation aluminum insulated metal substrate (IMS), which improves
the heat radiation.
• The control input terminals have a shrink pitch of 1.778mm (70mil).
• The power terminals have a standard pitch of 2.54mm (100mil).

Lead frame
Mold resin
BSD IC IGBT FWD WIRE

Mold resin
Aluminum base PCB with isolation layer

Fig.1-2 Package overview Fig.1-3 Package cross section diagram

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 2. Product Lineup

Table. 1-1 Lineup

Temperature sensor output (Vtemp, out)
Overheating protection(self shutdown)
Over current protection (External current detection and shutdown)
Under voltage protection (self shutdown)
N-side fault status Output (Alarm)
P-side fault status Output (Alarm)

Rating of IGBT
Isolation Voltage
Package Voltage Current Type name
[Vrms]
[V] [A]

15A 6MBP15XSJ065-50

20A 6MBP20XSJ065-50
-
30A 6MBP30XSJ065-50

35A 6MBP35XSJ065-50 1500Vrms

P633C     - 650V Sinusoidal 60Hz,
15A 6MBP15XSK065-50
1min. *1
20A 6MBP20XSK065-50

30A 6MBP30XSK065-50

35A 6MBP35XSK065-50
*1 Between all shorted terminals and case

MT6M16945 © Fuji Electric Co., Ltd. All rights reserved. 1-5

 3. Definition of Type Name and Marking Spec

• Type name
6 MBP 15 X S J 065 - 50

50 : RoHS

Voltage rating
065 : 650V
Additional number of series
J : Temperature sensor output
K : Temperature sensor output and Overheating protection

Series name
S: Package type
Series name
X: Chip generation
IGBT current rating
15:15A, 20:20A, 30:30A, 35:35A
Indicates IGBT IPM
Number of IGBTs
6 : 6-chip circuit of three phase bridge

Fig.1-4 Part numbers

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 Fig.1-5 Marking Specification

Table. 1-2 Products code

PRODUCTS CODE
TYPE NAME
A1 A2

6MBP15XSJ065-50 L J
6MBP15XSK065-50 L K
6MBP20XSJ065-50 M J
6MBP20XSK065-50 M K
6MBP30XSJ065-50 O J
6MBP30XSK065-50 O K
6MBP35XSJ065-50 P J
6MBP35XSK065-50 P K

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 4. Outline Dimensions

Note.1
IMS(Insulated Metal Substrate) is deliberately protruded to improve the thermal conductivity
between IMS and heat-sink.
Note.2
The thickness from the package surface to the back side includes the IMS.
Note.3
Thickness of the case part of the package outer wall. (excluding the IMS and marking surface)
Note.4
Height of the terminal and height of the stopper part including IMS.

Fig.1-6 Case outline drawings

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 Table. 1-3 Pin assignment
Pin No. Pin Name Pin No. Pin Name
3 VB(U) 22 N(W)
5 VB(V) 23 N(V)
7 VB(W) 24 N(U)
9 IN(HU) 26 W
10 IN(HV) 28 V
11 IN(HW) 30 U
12 VCCH 32 P
13 COM 36 NC
14 IN(LU)
15 IN(LV)
16 IN(LW)
17 VCCL
18 VFO
19 IS
20 COM
21 TEMP

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 5. Absolute Maximum Ratings

An example of the absolute maximum ratings of 6MBP20XSJ065-50 is shown in Table 1-4.

Table 1-4 Absolute Maximum Ratings at Tvj=25C,VCC=15V (unless otherwise specified)

Item Symbol Rating Unit Description
DC voltage that can be applied
DC Bus Voltage VDC(terminal) 450 V between
P-N(U), N(V), N(W) terminals
Peak value of the surge voltage
that can be applied between P-
Bus Voltage (Surge) VDC(Surge,terminal) 500 V
N(U), N(V), N(W) terminals during
switching operation
Maximum collector-emitter voltage
Collector-Emitter Voltage VCE(chip) 650 V of IGBT and repeated peak reverse
voltage of FWD.
Maximum collector current for the
Collector Current IC 20 A
IGBT chip. Tc=25C
Maximum pulse collector current
Peak Collector Current ICP 40 A
for the IGBT chip. Tc=25C
Maximum forward current for the
Forward Current IF 20 A
FWD chip. Tc=25C
Maximum pulse forward current for
Peak Forward Current IFP 40 A
the FWD chip. Tc=25C
Collector Power Maximum power dissipation for one
PD_IGBT 41.0 W
Dissipation IGBT element at Tc=25C
Maximum power dissipation for one
FWD Power Dissipation PD_FWD 33.9 W
FWD element at Tc=25C
Self operation “DC Bus
VCC=VB(*)=13.5~16.5V
voltage” of circuit
VDC(sc) 400 V Tvj=125oC, arm short circuit, non-
protection between upper-
repetitive less than 2us.
arm and lower-arm
Maximum virtual junction
Virtual Junction temperature of the IGBT chips and
Temperature of Inverter Tvj +150 C the FWD chips.
Block Operating life is limited by junction
temperature and power cycle.
Junction temperature of the IGBT
Operating Virtual Junction and FWD chips during continuous
-40 ~
Temperature of Inverter Tvjop C operation.
+150
Block Operating life is limited by junction
temperature and power cycle.

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 Table 1-5 Absolute Maximum Ratings at Tvj=25C,VCC=15V (Continued)
Item Symbol Rating Unit Descriptions
Voltage that can be applied
High-side Supply Voltage VCCH -0.5 ~ 20 V
between COM and VCCH terminal
Voltage that can be applied
Low-side Supply Voltage VCCL -0.5 ~ 20 V
between COM and VCCL terminal
VB(U)-COM Voltage that can be applied
High-side Bias Absolute
VB(V)-COM -0.5 ~ 670 V between VB(U)-COM, VB(V)-
Voltage
VB(W)-COM COM,VB(W)-COM terminal
VB(U) Voltage that can be applied
High-side Bias Voltage for
VB(V) -0.5 ~ 20 V between U-VB(U), V-VB(V), W-
IGBT Gate Driving
VB(W) VB(W) terminal
VU Voltage that can be applied
High-side Bias offset
VV -5 ~ 650 V between U-COM, V-COM, W-
Voltage
VW COM terminals.
-0.5 ~ VCCH+0.5 Voltage that can be applied
Input Signal Voltage VIN V
-0.5 ~ VCCL+0.5 between IN(*)-COM terminal
Maximum input current that flows
Input Signal Current IIN 3 mA
from IN(*) to COM terminal
Voltage that can be applied
Fault Signal Voltage VFO -0.5 ~ VCCL+0.5 V
between COM and VFO terminal
Sink current that flows from VFO
Fault Signal Current IFO 1 mA
to COM terminal
Over Current Sensing Voltage that can be applied
VIS -0.5 ~ VCCL+0.5 V
Input Voltage between IS and COM terminal
Maximum Junction
Maximum junction temperature
Temperature of Control Tvj 150 C
of the control circuit block
Circuit Block
Operating case temperature
Operating Case (temperature of the aluminum
Tc -40 ~ +125 C
Temperature plate directly under the IGBT or
the FWD)
Range of ambient temperature
Storage Temperature Tstg -40 ~ +125 C for storage or transportation,
when there is no electrical load
Maximum effective value of the
sine-wave voltage between the
terminals and the heat sink,
Isolation Voltage Visol AC 1500 Vrms
when all terminals are shorted
simultaneously. (Sine wave =
60Hz / 1min)

Maximum torque value when

Mounting torque of screws MS 0.59 ~ 0.98 N・m tightening the product and heat
sink with M3 screws.

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 <Absolute Maximum Rating of Collector-Emitter Voltage>
During operation, the voltage between P-N(U, V, W) is usually applied to high-side or low-side of one
phase. Therefore, Use the product with the voltage applied between P-N(*) within the absolute
maximum ratings. The collector-emitter voltage absolute maximum rating is described below.
VCE(chip): Since VCE(chip) cannot be measured directly, use the product with VDC(terminal),
VDC(Surge,terminal), which is the voltage between P-N(*) terminals, within the absolute
maximum ratings.
VDC(terminal): DC bus voltage (between P-N(U, V, W) terminals)
VDC(Surge, terminal): DC bus voltage at P-N(U, V, W) terminals including surge voltage generated
during switching.
• Fig.1-7 shows the waveforms during short-circuit, IGBT turn-off and FWD reverse recovery.
Since VDC(Surge,terminal) is different in each situation, it is necessary to set VDC(terminal) considering these
situations.
• VCE(chip) is the collector-emitter voltage absolute maximum rating of the IGBT chip. VDC(Surge, terminal) is
specified considering the margin of surge voltage generated by the wiring inductance inside the
Product.
• Also, VDC(terminal) is specified with margin considering the surge voltage generated by the wiring
inductance between the P-N(*) terminal and the bulk capacitor.

Collector-emitter voltage (a) During IGBT turn off

(b) During FWD reverse recovery (c) During short circuit

Fig.1-7 Waveforms and Collector-Emitter voltage during IGBT turn-off, FWD reverse recovery, and
short-circuit

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