DISCRETE SEMICONDUCTORS

DATA SHEET

BFS17
NPN 1 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

DESCRIPTION
NPN transistor in a plastic SOT23 package.

handbook, halfpage 3
APPLICATIONS
• A wide range of RF applications such as:
– Mixers and oscillators in TV tuners
– RF communications equipment. 1 2

Top view MSB003

PINNING

PIN DESCRIPTION
Marking code: E1p.
1 base
2 emitter Fig.1 SOT23.
3 collector

QUICK REFERENCED DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage open emitter − 25 V
VCEO collector-emitter voltage open base − 15 V
IC DC collector current − 25 mA
Ptot total power dissipation up to Ts = 70 °C; note 1 − 300 mW
fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C 1 − GHz
F noise figure IC = 2 mA; VCE = 5 V; RS = 50 Ω; f = 500 MHz; 4.5 − dB
Tj = 25 °C

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 25 V
VCEO collector-emitter voltage open base − 15 V
VEBO emitter-base voltage open collector − 2.5 V
IC DC collector current − 25 mA
ICM peak collector current − 50 mA
Ptot total power dissipation up to Ts = 70 °C; note 1 − 300 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

Note to the Quick reference data and the Limiting values

1. Ts is the temperature at the soldering point of the collector pin.

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Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point up to Ts = 70 °C; note 1 260 K/W

Note
1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 10 V − − 10 nA
hFE DC current gain IC = 2 mA; VCE = 1 V 25 90 −
IC = 25 mA; VCE = 1 V 25 90 −
fT transition frequency IC = 2 mA; VCE = 5 V; f = 500 MHz − 1 − GHz
IC = 25 mA; VCE = 5 V; f = 500 MHz − 1.6 − GHz
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.8 1.5 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − − 2 pF
Cre feedback capacitance IC = 1 mA; VCE = 5 V; f = 1 MHz − 0.65 − pF
F noise figure IC = 2 mA; VCE = 5 V; RS = 50 Ω; − 4.5 − dB
f = 500 MHz

September 1995 3
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

MEA395 MEA396
100 2.0
handbook, halfpage handbook, halfpage
Cc
(pF)
hFE
1.6

1.2

50

0.8

0.4

0 0
0 10 20 30 0 10 20 30
IC (mA) VCB (V)

VCE = 1 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C.

Fig.2 DC current gain as a function of Fig.3 Collector capacitance as a function of

collector current. collector-base voltage.

MEA393 MEA397
2 10
handbook, halfpage handbook, halfpage

fT F
(GHz) (dB)

1 5

0 0
0 10 20 30 0 4 8 12 16 20
IC (mA)
IC (mA)

VCE = 5 V; f = 500 MHz; Tj = 25 °C. VCE = 5 V; RS = 50 Ω; f = 500 MHz; Tj = 25 °C.

Fig.4 Transition frequency as a function of Fig.5 Minimum noise figure as a function of

collector current. collector current.

September 1995 4
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D B E A X

HE v M A

A1

1 2 c

e1 bp w M B Lp

e
detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT23 97-02-28

September 1995 5
Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 6