N-Channel Enhancement Mode PKCH2BB

NIKO-SEM Field Effect Transistor PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY
4
V(BR)DSS RDS(ON) ID D
30V 0.99mΩ 229A

Features
S
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio. D D D D
• Optimized Gate Charge to Minimize Switching Losses.
G. GATE
Applications D. DRAIN
• Protection Circuits Applications. S. SOURCE
• Computer for DC to DC Converters Applications. 100% UIS Tested
100% Rg Tested
#1 S S S G

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V

4
TC = 25 °C 229
Continuous Drain Current ID
TC = 100 °C 145
1
Pulsed Drain Current IDM 350
A
TA = 25 °C 50
Continuous Drain Current ID
TA = 70 °C 40
Avalanche Current IAS 86
Avalanche Energy L = 0.1mH EAS 369.8 mJ
TC = 25 °C 104
Power Dissipation PD W
TC = 100 °C 41

3
TA = 25 °C 5
Power Dissipation PD W
TA = 70 °C 3.2
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

REV 1.0 G-37-1

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 N-Channel Enhancement Mode PKCH2BB
NIKO-SEM Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient t ≦10s RJA 25
2
Junction-to-Ambient Steady-State RJA 40 °C / W
Junction-to-Case Steady-State RJC 1.2
1
Pulse width limited by maximum junction temperature.
2 2
The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
The Power dissipation is based on RJA t ≦10s value.
4
The maximum current rating is package limited.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.35 1.8 2.35
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS A
VDS = 20V, VGS = 0V, TJ = 55 °C 10

Drain-Source On-State VGS = 4.5V, ID = 20A 1.2 1.5

1 RDS(ON) mΩ
Resistance VGS = 10V, ID = 20A 0.85 0.99
1
Forward Transconductance gfs VDS = 5V, ID = 20A 123 S
DYNAMIC
Input Capacitance Ciss 6151
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 1052 pF

Reverse Transfer Capacitance Crss 693

Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.7 Ω

2
VGS = 10V 128
Total Gate Charge Qg
VGS = 4.5V VDS = 15V , VGS = 10V, 65
2
nC
Gate-Source Charge Qgs ID = 20A 19.7
2
Gate-Drain Charge Qgd 24
2
Turn-On Delay Time td(on) 27
2
Rise Time tr VDS = 15V , 49
2
nS
Turn-Off Delay Time td(off) ID  20A, VGS = 10V, RGEN =6Ω 171
2
Fall Time tf 90

REV 1.0 G-37-1

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 N-Channel Enhancement Mode PKCH2BB
NIKO-SEM Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current IS 104 A
1
Forward Voltage VSD IF = 20A, VGS = 0V 1 V
Reverse Recovery Time trr 46 nS
IF = 20A, dlF/dt = 100A / S
Reverse Recovery Charge Qrr 36 nC
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
1
2
Independent of operating temperature.

REV 1.0 G-37-1

3
 N-Channel Enhancement Mode PKCH2BB
NIKO-SEM Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

Output Characteristics Transfer Characteristics

30 30
VGS=10V
VGS=9V VGS=3.1V
VGS=8V
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

VGS=7V VGS=3V
24 24
VGS=6V
VGS=5V
VGS=4.5V

18 18

12 VGS=2.9V 12 25℃

6 6 125℃ -20℃
VGS=2.8V

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5

VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

On-Resistance VS Gate-To-Source On-Resistance VS Drain Current

0.004 0.003
Voltage
ID=20A
RDS(ON)ON-Resistance(OHM)

0.0025
RDS(ON)ON-Resistance(OHM)

0.0032

0.002
0.0024
VGS=4.5V
0.0015

0.0016
0.001

0.0008 VGS=10V
0.0005

0 0
2 4 6 8 10 0 6 12 18 24 30

VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A)

On-Resistance VS Temperature Capacitance Characteristic

2.0 7000
Normalized Drain to Source

1.8 CISS
6000

1.6
C , Capacitance(pF)

5000
ON-Resistance

1.4
4000
1.2
3000
1.0

2000
0.8
VGS=10V
0.6 ID=20A 1000 COSS
CRSS
0.4 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30

TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V)

REV 1.0 G-37-1

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 N-Channel Enhancement Mode PKCH2BB
NIKO-SEM Field Effect Transistor PDFN 5x6P
Halogen-Free & Lead-Free

Gate charge Characteristics Source-Drain Diode Forward Voltage

10
Characteristics 100

VDS=15V
VGS , Gate-To-Source Voltage(V)

ID=20A
8

IS , Source Current(A)
10
6

4
150℃ 25℃
1

0 0.1
0 26 52 78 104 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V)

Safe Operating Area Single Pulse Maximum Power Dissipation

1000 200
Operation in This
Area is Limited
by RDS(ON) Single Pulse
160 RθJA = 40 ˚C/W
ID , Drain Current(A)

100 TA = 25˚C
Power(W)

120

10
1ms
80

10ms

1 NOTE :
[Link] = 10V 100ms 40
[Link] = 25˚C
3.RθJA = 40 ˚C/W
[Link] Pulse
DC
0
0.1
0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

10
Transient Thermal Resistance
r(t) , Normalized Effective

Duty cycle=0.5

0.2 Notes

0.1
0.1
0.05
[Link] cycle, D= t1 / t2
[Link] = 40 ℃/W
0.02
[Link]-TA = P*RthJA(t)
[Link](t) = r(t)*RthJA
0.01
single pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000

T1 , Square Wave Pulse Duration[sec]

REV 1.0 G-37-1

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