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2SC2240

The 2SC2240 is an NPN silicon epitaxial planar transistor designed for low noise audio amplifier applications, available in two groups based on DC current gain. It features a TO-92 plastic package with maximum ratings including a collector-emitter voltage of 120V and power dissipation of 625mW. Key characteristics include a DC current gain range of 200-700 and a transition frequency of 100MHz.

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Ulises Monteverde
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70 views2 pages

2SC2240

The 2SC2240 is an NPN silicon epitaxial planar transistor designed for low noise audio amplifier applications, available in two groups based on DC current gain. It features a TO-92 plastic package with maximum ratings including a collector-emitter voltage of 120V and power dissipation of 625mW. Key characteristics include a DC current gain range of 200-700 and a transition frequency of 100MHz.

Uploaded by

Ulises Monteverde
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2SC2240

NPN Silicon Epitaxial Planar Transistor


for low noise audio amplifier applications.

The transistor is subdivided into two groups,


G and L according to its DC current gain

On special request, these transistors can be


manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)


Parameter Symbol Value Unit
Collector Base Voltage VCBO 120 V
Collector Emitter Voltage VCEO 120 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 100 mA
Base Current IB 20 mA
Power Dissipation Ptot 625 mW
Junction Temperature Tj 150 O
C
Storage Temperature Range Tstg - 55 to + 150 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 6 V, IC = 2 mA Current Gain Group G hFE 200 - 400 -
L hFE 350 - 700 -
Collector Base Cutoff Current
ICBO - - 100 nA
at VCB = 120 V
Emitter Base Cutoff Current
IEBO - - 100 nA
at VEB = 5 V
Collector Emitter Breakdown Voltage
V(BR)CEO 120 - - V
at IC = 1 mA
Collector Emitter Saturation Voltage
VCE(sat) - - 0.3 V
at IC = 10 mA, IB = 1 mA
Transition Frequency
fT - 100 - MHz
at VCE = 6 V, IC = 1 mA
Output Capacitance
Cob - - 6 pF
at VCB = 10 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.


® Dated：08/01/2016 Rev：02
2SC2240

SEMTECH ELECTRONICS LTD.


® Dated：08/01/2016 Rev：02

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