EDC (P)
6-14
The Field Effect Trans
6.6
MOSFET:
1. As cxpläncd in thc
cffcct transistor. The classification
of ficld cffect transistors.
MOSFET has MOSFET is another typc of fed
bccomc onc of thc most important deviccs
and cons!nuction of uscd in desjgn
intcgratcd circ aits for digital computcIs.
MOSFET is thc short fon of
arc diffcrent from the JFETs in metal oxide semiconductor ficld cffcct transistor. MOSFETS
construction and thcy arc of two types :
Deplction typc MOSFET and
Enhancement type MOSFET.
6.7 Depletion - Type MOSFET :
Let us now discuss the first type of MOSFET i.c. the
depletion type devicc.
6.7.1 Basic Construction :
Construction of the depletion type MOSFET is as shown in Fig) 6.7.1.
LA p-tYpe of semiconductor material (silicon) is used as a substrate. Usually thc substrat eis
intermally connected to the source terminal. But sometimes it is taken out as a separatc termina
tened "SS".
The drain and source terminals are connccted to the n-type regions through the metallic
as shown in Fig. 6.7.1. contacfS
These n-type regions are linked with cach other by a n-channcl) as shown in Fig. 6.7.1.
(The gate terminal is insulated from the n-channel by a thin silicon dioxide layer ( SiO, ).)
Note : Thus there is no direct contact between the gate terminal and the n-type channel of the
MOSFET. This is a major difference between JFET and MOSFET.
Drain (D)9 -Sioz
n-type doped
regions
n-channel
Gate (G) o substrate
o SS
(Substrate)
Metal contacts
Source (S)
Fig 6.7.1: Construction of n-channel depletion type MOSFET
. Effect of the insulating Sio, layer :
Due to the presence of the Sio, layer betwcen gate temiral and n-type channcl, the input
Impedance of MOSFET is very high This is a desirable fcaturc of a MOSFET. Duce to high input
EDC (P)
6-17 The Field Effect Transistors
Thus thc drain current will
incrcasc as we incrcasc thc positiyc voltagc
current will be very rapid. We inust Vcs: Tis iSt
should not cxcccd I, abovc that. thercfore be awarc of the maximum drain current rating and
Thus thc levcl of frcc clcctrons has bccn
voltagc. Thercforce thc region of opcration 'cnhanccd" duc to the application of positivC gatc
*cnhanccmcnt rcgion of opcration and thccorresponding
egion
to thec positivc gatc curTent is
bctwccn callcd a5
as depletion rcgion. This is as shown in cutof[ and saturation is rcferTCd to
Fig. 6.7.4.
6.7.3 Drain Characteristics of n-channel Depletion MOSFET :
Fig. 6.7.5 shows thc drain
charactcristic is samc as that charactcristics of a
of a JFET Cxccpt for thc n-channcl deplction MOSFET. Notc that this
positive part of Ves.
Ip(mA)
10.9
VGs = +1V
Enhancement
mode
Ipss 8
VGs = 0V
6
VGs = -1V
'Dss 4
Depietion
2 VGS =-2V mode
Dss NGs =-3V
4
Nos -4V
Vas =-5V}
’Vps (Volts)
VGs Vp= -6V
Fig. 6.7.5 : Drain
characteristics of an n-channcl depletion ivpe MOSFET
6.7.4 p-channel Depletion - Type MOSFET:
The construction of a p-channel
n-channel MOSFET shown in Fig.deplction type MOSFET is exactly opposite to that of thc
6.7.1. The construction and charactcristics
depletion type MOSFET are as shown in Fig. 6.7.6 and Figs. of a p-channc!
6.7.7(a) and (b) respcctively.
Drain (D) -SiOz
4
p-type channet
Gate (G)
-o SS
substrate
VGs
Metal contacts
Source (S)
Fig 6.7.6 : Construction of p-channel deplction typc MOSFET
The
6-18
cormparcd to n-channc)
EDC (P) revcrscd as
dircctions arc
and cuTent 6.7.7(b) is the rniror
thc voltagc polaritics in Fig.
Notc that all 6.7.7(a). shown
MOSFET as shown in Fig. charactcristics as MOSFET.
reverscd, thc transfer dcplction
As Vcg also is charactcristics of the n-type ‘Ip (mA)
imagc of the transfer
lo (mA)
Vas =-1V Depletion
Enhancement node
node 'oss
Vas = 0v
Ipss
Vas = 1V
VGs =2V
Vos
VGs = 3V 3 Vp4v (Volts)
-1 0 1
+Vps
(Volts)
(b) Transfer charactenstics
Vas = Vp= 4V.
(a) Drain characteristics
p-channel depletion type MOSFET
Characteristics of
Fig 6.7.7 :
and p-type Depletion MOSFETS :
6.7.5 Symbols of n MOSFETs are as shown in Figs. 6.7.8(a)
deplction type
both nand p-channcl internally to the sourcc terminal.
The symbols ofsubstrate is connccted
and (b). Note that the ° Drain (D)
Drain (D)
Gate o
Gate o (G)
(G) Source (S)
d Source (S)
(b) Symbol of p-channel depletion typc
deplction type
(a) Symbol of n-channel
MOSFET
MOSFET
Fig, 6.7.8: Conventional circuit symbols
Drain (D) 9Drain (D)
Gate o
Gate o
(G) (G)
Source (S) o Source (S)
(c) n channel (d) p channel
Pig, 6.7.8 :Simplified circuit symbols for depletion MOSFETs
Transistors
EDC (P) 6-19 The Field Effect
6.8 Enhancement -Type MOSFET:
The basic constnuction of an n-channel enhancement type MOSFET is as shown in Fig. 6.8.1.
A slab of p-type semiconductor is used as substrate. The substrate is sometimes connccted to the
source otherwise it is brought out as the fourth terminal.
The drain and source terminals are connected to the n-type doped regions through the mctallic
contacts.
But most important point to be noted is that the "channel"" is absent here.
The insulating Si0, layer is still present which isolates gate terminal from the the substrate.
Thus the construction is very similar to that of the depletion type MOSFET, except for the
absence of the channel.
Drain (D) SiO, layer n-type doped region
n Channel is absent
p-type SS
substrate (substrate)
Gate (G)
Metallic contacts
n n-type doped region
Source (S)
enhancement MOSFET
Fig. 6.8.1 : Construction of n-channcl
6.8.1 Operation of Enhancement - Type MOSFET:
different operating conditions:
The opeation can be explained with two
Operation with Vcs =0and
Operation when Vcs is positive.
() Operation with Vcs = 0volt :
between its drain and source, then due to the
I VGs=0and a positive voltage is applicd
This is totally different from what
absence of the n-type channel, a zero drain current will result. = 0.
happens in the depletion-type MOSFET, where I, = Ipss at VGs
(ii) Operation when Vcs is positive :
Refer to Fig. 6.8.2, where both Vos and Vng are positive.
potential at the gatc terminal will repcl the holcs prcscnt in the p-typc substrate as
The positivc 6.8.2.
shown in Fig.
The Field Effect Transistors
6-20
EDC (P)
he minontv
crcation of a deplction region ncar the SiO, insulating layer. But
1 s results in
the p-tvne substrate will be
attracted towards the gate terminal and
carncrs 1.c. thc clcctrons in 6.8.2.
gather ncar the surfacc of SiO, as shown in Fig. SiO, laycr will
incrcasc the positive Ve. the number of clectrons gathening ncar the
AS we
incrcaSe. creates an induccd
clcctron concentration ncar SiO. 1aver increases to such an extent that it
Ihc
n-channel which connccts the n-type dopcd regions.induced channel. The value of Vs at which
through this
1ne draln cuirent then starts flowing
voltage" and is indicated by VT Or Gs (TH y
thhs conduction bcgins is callcd as the 'threshold
Electrons attracted
-SiO2 by positive gate
(induced n-channel)
Region depleted of
p-type carriers (holes)
lG = 0 SS
G Vps
VGs Holes repelled by
S n positive gate
Fig. 6.8.2: Formation of induced channel in n-channcl enhancement MOSFET
(iüi) Efect of increase in the drain to source voltage :
-Pinch off (beginning)
Depletion region
SS
substrate
Vos
Vas
Bic 6.8.3 : Effcct of change in Vns at
fixed cs on the channel width
EDC (P) 6-21 The Field Effect Trans1stors
Rcfcr to Fig. 6.8.3. The positive gatc lo source voltagc Vos is kept constant and thc drain o
sourcc voltage Vos is incrcascd gradually.
Duc to this, the gatc terminal bccomcs less and less positive with respect to the drain. So less
number of clectrons arc attractcd towards gatc tcrminal and the 'induccd channcl" bcconcs
narrowas shown in Fig. 6.8.3.
Eventually, thc channcl width will be reduccd to a point of pinch off and the saturation
condition will be cstablished, which is same as that in aJFET, or depletion typc MOSFET.
That mcans any further incrcasc in Vns at the fixcd valuc of Vcs will not affect thc saturation
lcvcl of I, unlcss brcakdown conditions arc cncountered.
6.8.2 Characteristics of n-channel Enhancement Type MOSFET:
The drain charactcristics and transfer characteristics of a n-channel cnhancement MOSFET arc
as shown in Figs. 6.8.4(b) and (a) respectivcly.
IplmA) Ip(mA)
10 -10 VGs =+ 8V
9
8 8
7 7 VGs=+ 7V
6 6
5 5
VGs + 6V
4
3 3
VGs =+ 5V
2 2
Gs =+ 4V
1t VGs =+ 3V
Vps
7 8 Ves 0 5 10 15 20 25
o 12 3 4 5 6 (Volts)
VGs V,= 2V
(a) Transfer characteristics (b) Drain characteristics
Fig, 6.8.4: Characteristics of an n-channel cnhancement MOSFET
Note that the drain current is zero for Vcs S VT
The transfer characteristics shown in Fig. 6.8.4(a) is very much differcnt from those obtaincd
carlier. It is now totally in the positive VGs region and remains zero tillVes = V.
The relation between drain current and Vos is givcn by the following equation,
I, = k(VGs -V,) (6.8.1)
This is a non-lincar relation and is valid only for VGs > V The "k" is a constant and its
value depends on construction of thc devic.
6.8.3 p-channel Enhancement - Type MOSFETs :
The construction of a p-channcl enhancement type MOSFET is as shown in Fig. 6.8.5, It is
cnhancemcnt typc MOSFET
Cxactly opposite to that of a n-channcl
6-22
The Field Effect Transistors
EDC (P)
connecte.
a n-ty pe substratc is uscd along with the p-type doped reons, reversed
That mcans now dircchons are
the voltage polaritics and curent
the drain and source teminals. All
Drain (D) -SiO, layer
Ip p
Gate (G) n-type oSS
substrate
Negative
VGs
p
Metal contacts
Source (S)
type MOSFET
Fig. 6.8,5 : Construction of p-channel enhancement
6.8.4 Characteristics of p-channel Enhancement Type MOSFET:
current increases
The drain characteristics are as shown in Fig. 6.8.6(a). Note that the drain
characteristics is as shown
with increase in the negative gate to source voltage (Ves . The transfer
of an n channel
in Fig. 6.8.6(b). Note that it 1s exactly the miror image of the transfer characteristic
enhancement MOSFET. The drain current I, remains zero upto the voltage Ves < Vy and increases
as negative VGs becomes greater than V, as shown in Fig. 6.8.6(6).
Io (mA)
7
Ves = 6V.... +7
6
6
5
5
4
Ves = 5V 4
3
2 VGs = 4V
1 Vas = 3V
Vag = V= 2V 5 4 3
Vos VGS
(Volts) (Volts) VGs = V= 2V
(a) Drain characteristics of p-channel (b) Transfer characteristics of p-channel
enhancement MOSFET
enhancement MOSFET
Fig. 6.8.6
6.8.5 Symbols of Enhancement MOSFET:
6.8.7
The circuit symbols of p and n-channel cnhancement in Fig.
Note that the substrate is internally connected to the source MOSFETS
are as shown three teminal
device.
terminal making it a
EDC (P) 6-23 The Field Effect Transistors
oD
G
G
n - channel
channel
(a) For n-channcl MOSFET
Fig. 6.8.7 : Circuit symbols of (b) For p-channel MOSFET
enhancement type MOSFETs
D oD
G
n - channel
p - channel
(c) n-channel
(d) p-channel
Fig. 6.8.7 : Simplified symnbols for enhancement MOSFETs
Summary of MOSFET operation :
For an n-channel enhancement mode MOSFET, a
the threshold voltage V, should be applied positive gate to source voltage, greater than
to make it conduct.
For a p-channel device all the voltage polarities and
to the NMOS device. current directions are reversed as compared
6.9
Comparisons
6.9.1 Comparison of JFET and MOSFET:
Table 6.9.1
Sr. JFET MOSFET
No.
I. JFET are of two types, p-channel and MOSFETs can be of depletion type or
n-channel JFETS. enhancement type.
2. The symbols of JFETS are as follows : The symbols of MOSFETs are as follows :
D
D
G
G
n-channel
n-channel
n-channel JFET p-channel JFET depletion MOSFET enhancement MOSFET
S. | TFETs do not have the insulated gate. MOSFETS have the insulated gate structure.
The Field Effect Transistors
6-24
EDC (P) MOSFET
Sr. JFET JFET
higher than that of
No.
Input inpedance is structure.
that of the insulated gate
4. Input inmpcdancc is lower than duc to the JFET
MOSFETS. is higher than that of a
that of a Drain resistance
5. Drain esistancc is lower than JFET
MOSFET. much larger than that of a
the fcedback Ips and Iod are
6. The input resistance r. and
smalier than
resistance rod are very much
that of MOSFET.
circuits of depletion MOSFET are
Biasing biasing
Biasing methods used are self bias,
fixcd for JFET but
7. same as those used are.
bias and voltage divider bias. for enhancement MOSFET
circuits voltage divider biasing
feedback biasing and
6.9.2 Comparison of JFET and BJT:
99, MAY 2002 !!! 1
ASKED IN EXAM - DEC.
is as given in Table 6.9.2.
The comparison Tf BJT and JFET Table 6.9.2
JFET
Sr. BJT
No.
BJT is a current controlled
device. It is a voltage controlled device.
1
JFET is a unipolar device i.e. current flows
2 BJT is a bipolar device (Minority and only due to the majority carriers.
majority carriers both contribute to the
current flow.)
3 Thermal runaway can damage the BJT. Thermal unaway does not take place.
4 Low input impedance. Input impedance is high.
5 Noise generated by BJT is high. Noise generated by JFET is low.
Transfer characteristics is linear. Transfer characteristics is nonlinear.
6.
7 BJT has a much higher sensitivity to JFET is less sensitive to changes in the
changcs in the applied signal. applied signal
8 ACvolage gain of transistor AC voltage gain of JFET amplifier is less
amplificrs is much higher than that of than that of a BJT amplifier.
JFET amplificrs.
