Experiment NO :02

Experiment name : FET Applications

OBJECTIVE
 To study the output and transfer characteristics of a MOSFET
 To demonstrate the application of an N-channel MOSFET as an electronic switch for controlling a
load

INTRODUCTION AND THEORY

A Field-Effect Transistor (FET) is a type of transistor that operates by using an electric field to control the
flow of current through a semiconductor channel. It typically has three terminals: the Source, Drain, and
Gate. By applying a voltage to the gate terminal, an electric field is created, which modulates the
conductivity of the channel between the source and drain. This allows the FET to act as an electronic
switch or amplifier with high input impedance and low power consumption. Due to its efficient
performance and reliability, the FET is widely utilized in various electronic circuits, including digital logic
devices, amplifiers, and signal processing systems.

JFET (Junction Field Effect Transistor)

The Junction Field Effect Transistor (JFET) is a type of Field Effect Transistor that uses a
reverse-biased PN junction to control the flow of current. It operates by using the electric field
generated by the voltage applied to the gate terminal to control the current between the source
and drain terminals. In a JFET, the current conduction takes place through a semiconductor
channel, which can be either N-type or P-type, giving rise to two types of JFETs: N-channel
JFET and P-channel JFET. In an N-channel JFET, the channel is composed of N-type material,
and electrons are the majority carriers. This type is generally preferred over the P-channel JFET
due to its higher electron mobility and better conductivity. Conversely, in a P-channel JFET, the
channel is made of P-type material, and holes are the majority carriers. The JFET is known for
its high input impedance and low noise characteristics, making it ideal for applications such as
amplifiers and signal processing circuits. Importantly, the JFET is normally "on" when no
voltage is applied to the gate, meaning it is a normally-conducting device.

Fig 01: Junction Field Effect Transistors

In a Field-Effect Transistor (FET), the gate, source, drain, and channel are key components that
work together to control the flow of current.

 Gate: The gate is a terminal that controls the conductivity of the channel. It is normally
insulated from the channel by a thin layer of oxide (in MOSFETs). When a voltage is
applied to the gate, it creates an electric field that either enhances or depletes charge
carriers in the channel, thereby switching the device on or off.

 Source: The source is the terminal through which charge carriers (electrons or holes)
enter the channel. It acts as the origin point for current flow in the device.

 Drain: The drain is the terminal through which charge carriers leave the channel. It is the
endpoint for the current flowing through the FET.

 Channel: The channel is the region of semiconductor material between the source and
drain. Its conductivity is controlled by the gate voltage. When the appropriate voltage is
applied to the gate, it modulates the channel’s conductivity, allowing current to flow from
the source to the drain or stopping it.

Together, these components enable the FET to act as a voltage-controlled switch or amplifier,
with the gate voltage regulating the current flow through the channel between the source and
drain.

Operation of a n-channel JFET

Consider an N-channel JFET where the gate-to-source voltage (VGS) is such that the gate is
reverse biased. This is the standard method of operating a JFET. When no reverse bias is applied
to the gate (i.e., VGS = 0) and no voltage is applied between the drain and source (VDS = 0), the
transistor behaves as two unbiased p-n junctions. In this condition, the depletion regions on
either side of the channel are of equal thickness and symmetrical. These depletion layers do not
conduct current as they lack free charge carriers.

When a positive voltage is applied to the drain terminal (D) with respect to the source terminal
(S), electrons (the majority carriers in an N-channel JFET) begin to flow from the source to the
drain. Since the gate and source are at the same potential, the transistor is considered to be in the
'open channel' state. Along the channel, from source to drain, the voltage increases, resulting in a
gradually increasing reverse bias across the gate-channel junctions. As a result, the depletion
region widens more toward the drain end.
 Fig 02 : N – Channel JFET

The drain current (ID) and source current (IS) are equal in magnitude but opposite in direction. As
the drain-to-source voltage (VDS) increases, the potential difference between the channel and the
gate also increases, which further increases the reverse bias across the junctions. Consequently,
the depletion region continues to widen, narrowing the effective channel width.

When VDS reaches a particular value equal to the pinch-off voltage (VP), the depletion regions
become so wide that the channel narrows significantly, increasing the channel resistance. At this
point, any further increase in VDS does not result in a significant increase in the drain current. The
current stabilizes and reaches a constant value known as the drain-source saturation current
(IDSS), which occurs when VGS = 0.

If VDS increases beyond the pinch-off voltage, the depletion layers fully pinch off the channel,
yet the current remains in saturation rather than dropping to zero. This state is called the pinch-
off region. The voltage at which this occurs is known as the pinch-off voltage (VP).
 In the JFET characteristic curves, four key regions can be observed. When VGS is set to values
such as -1V, -2V, -3V, and -4V while keeping VDS within the ohmic region (i.e., less than pinch-
off), the drain current (ID) decreases according to Ohm’s Law (V = IR). This reduction in current,
under constant VDS, is due to the increasing channel resistance, which is controlled by the gate
voltage. Therefore, in this region, the JFET effectively behaves like a voltage-controlled resistor.

pinched-off region
The pinched-off region in a FET refers to the condition where the conductive channel between
the source and drain becomes very narrow due to the expansion of depletion regions, caused by
an increased reverse bias between the gate and channel. As the drain-to-source voltage (VDS)
increases, the depletion region near the drain widens, gradually reducing the width of the
channel. When VDS reaches a specific value known as the pinch-off voltage (VP), the depletion
regions on both sides of the channel almost meet, effectively "pinching off" the channel. Despite
this, current still flows due to the movement of charge carriers, but the drain current (I D) becomes
constant and independent of further increases in VDS. This marks the beginning of the saturation
(or active) region, where the FET behaves like a constant current source. The pinched-off region
is crucial for the FET’s amplification function.

Saturation or Active Region

The saturation or active region in a
Field Effect Transistor (FET) is the operating region where the drain current (I D) stays constant
even if the drain-to-source voltage (VDS) increases. This occurs after the channel is pinched off.
In this region, the current is mainly controlled by the gate-to-source voltage (VGS), making it
ideal for use in amplifiers.

Active Region
The active region (also called the saturation region) of a FET is where the drain current (I D)
remains constant despite increases in the drain-to-source voltage (VDS). In this region, the current
is mainly controlled by the gate-to-source voltage (VGS), making it ideal for amplifier
applications.

Transfer Characteristics of N-Channel JFET

The transfer characteristics of an N-channel JFET describe the relationship between the drain
current (ID) and the gate-to-source voltage (VGS), with the drain-to-source voltage (VDS) kept
constant in the saturation (active) region.

1. Drain current decreases with the increase in the negativity of source-drain bias
2. Drain current, ID = I IDss when VGS = 0
3. Drain current, ID = 0 when VGS =VP
 Fig 04 : N - Channel JFET Transfer Characteristics

For the saturation region, the transfer characteristic follows this equation:

Where:

 ID = Drain current
 IDSS= Drain source saturated current (Zero-Gate Voltage Drain Current)
 VGS = Gate-to-source voltage
 VP - Gate source cutoff voltage also known as VGS = VP

MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor

A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device

used to control current in electronic circuits. It has three terminals: Gate (G), Drain (D), and
Source (S). A voltage applied to the gate controls the flow of current between the drain and
source. MOSFETs are widely used because they have high input impedance, low power
consumption, and are ideal for switching and amplification. There are two main types: N-channel
and P-channel, each with enhancement and depletion modes.
 Fig 05 : N-Channel and P-Channel MOSFET

MOSFET Output Characteristics

A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor
device commonly used for switching and amplification purposes. The output characteristics of a MOSFET
illustrate the relationship between the drain current (ID) and drain-to-source voltage (VDS) for different
constant gate-to-source voltages (VGS).

MOSFET Transfer Characteristics

The MOSFET is a voltage-controlled device where the current flowing

between the drain and source terminals is controlled by the voltage applied
at the gate terminal.

The transfer characteristic of a MOSFET describes how the drain current In

varies with the gate-to-source voltage VDS when the drain-to-source voltage
VDS is kept constant, typically at a value high enough to ensure the MOSFET
operates in the saturation region.

[Link] Voltage (Vth):

 Below a certain gate voltage (called the threshold voltage), the
MOSFET is off, and no current flows.
 When VGS Vth the MOSFET turns on, and current starts flowing

2. Operation Regions:

 Cutoff Region:
When VGS < Vth the MOSFET is OFF and no significant current flows, i.e. ID = 0

 Saturation Region :
For VGS >Vth and sufficiently high VD, the MOSFET operates in saturation, and the drain
current is controlled primarily by VGS according to:
Where:

 k′: Process transconductance parameter (depends on fabrication)

 W: Channel width
 L: Channel length

3. Transfer Characteristic Curve:

The plot of ID vs. VGS at a constant VDS is known as the transfer characteristic curve. This graph
helps in:

 Identifying the threshold voltage (Vth)

 Determining the gain or transconductance (gm) of the device
 Analyzing linearity and saturation behavior

Apparatus:

 2N7000 N – Channel MOSFET

 DC Power supply
 100Ω / 5W Resistor
 10 kΩ Variable Resistor
 1 KΩ Resistor
 Multimeter
 0.1 µF Capacitors
 Breadboard
 Jumper Wires
PROCEDURE

Activity 01,

Fig 06 : circuit for determine drain characteristic in n-channel MOSFET

To begin the experiment, the given circuit was constructed in Fig ( ). Following that, the
variable resistor RV₂ was adjusted until the voltmeter reading of V₁ became 0 V, ensuring that
VGS = 0V. For different settings of RV₂, the corresponding values of drain current ID were
measured for each value of drain-to-source voltage VDS. These measured values were then plotted
on a graph sheet, with ID on the y-axis and VDS on the x-axis. The procedure was repeated for
various gate voltages V1 such as 1 V, 2 V, 3 V, 6 V, and so on. Finally, the output resistance (ro
or rd) was determined using the slope from the ID vs. VDS graph, applying the formula
Activity 02,

Fig 07 : circuit for determine transfer characteristic in n-channel MOSFET

The given circuit was first constructed in Fig ( ). Then, the drain current (ID ) was measured for
various values of gate-to-source voltage (VGS). Using these measurements, a graph of ID versus
VGS was plotted on a graph sheet. From the plotted graph, the threshold voltage (VT) was
obtained by identifying the point where the current began to increase significantly. The
∆ ID
transconductance (gm) was then determined using the formula gm = based on the slope of
∆ VGS
the ID versus VGS graph. Finally, the experimental plot was compared with the theoretical graph
to analyze the accuracy and behavior of the device.

Activity 03,

The load (motor) was placed in series between a +5V supply and the drain of the 2N7000
MOSFET. The source terminal of the MOSFET was connected to ground. The gate was
connected to a push button or digital output pin via a 10kΩ pull-down resistor so that the gate is
assumed to be LOW by default. A HIGH (5V) was then applied to the gate to turn ON the
MOSFET and power the load. Then, a LOW (0V) was applied to turn OFF the MOSFET and
turn off the load. The drain current and drain-to-source voltage (VDS) were measured and
recorded with a multimeter at both ON and OFF states. Finally, the switching behavior was
tracked and comments were made on the findings based on the measurements and observed
behavior.
Discussion
Advantages of MOSFET over JFET

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of transistor that is

widely used in electronic devices. It has many advantages over JFET (Junction Field-Effect
Transistor). First, MOSFETs have very high input resistance, which means they do not take
much current from the input signal. This helps to save power and makes the circuit more
efficient. Second, MOSFETs come in two types: enhancement mode and depletion mode, while
JFETs usually come only in depletion mode. This gives engineers more options to design
different types of circuits using MOSFETs.
Another big advantage is that MOSFETs can switch on and off much faster than JFETs.
This makes them better for high-speed and digital applications like computers, smartphones, and
other modern electronics. Also, MOSFETs are smaller in size and easier to make in large
numbers, especially for integrated circuits (ICs), which are tiny chips with many electronic
components. Because of all these benefits low power use, fast switching, flexibility, and small
size MOSFETs are used more often than JFETs in today’s technology.

Input characteristic of the Field Effect Transistor (FET).

The input characteristic of a Field Effect Transistor (FET) describes how the voltage applied to
the gate controls the current flowing between the source and drain. In an FET, there are three
main parts: the gate, source, and drain. The gate acts like a control knob that uses voltage to
adjust the current flow through the channel connecting the source and drain. For an N-channel
FET, applying a positive voltage to the gate allows more current to flow from source to drain,
while a zero or negative voltage reduces or stops the current, turning the FET "off." For a P-
channel FET, a negative gate voltage increases the current, and a positive voltage reduces it. A
key feature of FETs is their high input impedance, meaning the gate draws almost no current,
often just a tiny fraction of a nanoampere, because it’s insulated (in MOSFETs) or reverse-
biased (in JFETs). This makes FETs very efficient and great for circuits where you need to control
large currents with small voltage signals, like in amplifiers or switches. FETs are sensitive to
voltage changes and don’t need much power to operate, making them ideal for devices like
sensors or audio equipment where preserving weak signals is important. However, at high
frequencies, the input impedance can drop due to small capacitances, which affects
performance in some applications.

Application of FET

Field Effect Transistors (FETs) are widely used in electronic devices because they use very little
power, work quickly, and produce less heat. There are two main types of FETs: JFET (Junction
Field Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).
Each type has its own uses. JFETs are mostly used in analog circuits, such as amplifiers, because
they provide smooth and clear signal amplification with very little noise. They are commonly
found in radios, microphones, musical equipment, and sensor circuits where accurate signals are
needed. JFETs are also used in voltage regulators to keep voltage levels steady. On the other
hand, MOSFETs are the most popular type of FET used today, especially in digital electronics.
They are found in computers, mobile phones, calculators, and microcontrollers because they can
switch on and off very fast and use very little energy. MOSFETs are also used in power control
systems, such as battery chargers, motor controllers, and power supplies. Because of their small
size, high speed, and low power use, FETs—especially MOSFETs—are very important in
modern technology.

Errors and How to Mitigate Them

One common issue is loose or poor connections on the breadboard, which can lead to unstable or
no output. This often happens due to worn-out contact points or loosely inserted jumper wires.
Ensuring that all connections are firm and using shorter, good-quality jumper wires can help
prevent this. Another frequent problem is faulty jumper wires or broken breadboard tracks,
which may cause the circuit to behave unpredictably or not work at all. Checking wire continuity
with a multimeter and changing the area of the breadboard can resolve this. Additionally,
overheating of FETs or active components like operational amplifiers can occur due to incorrect
supply voltages, lack of heat dissipation, or excessive current. This can distort the signal or
damage the component. To correct this, it's important to use a regulated power supply, ensure
proper pin connections, and avoid overloading the circuit. Sometimes, the power supply itself
may not provide a smooth or stable current, especially when using outdated or overloaded lab
equipment, leading to noise or fluctuation in the filter’s output. Using a stabilized power supply
and these errors can be minimized by testing all equipment and obtaining test data multiple
times.

Conclusion

Field Effect Transistors (FETs), like JFET and MOSFET, are very important in modern
electronics. They use voltage to control current and need very little input current to work. An N-
channel JFET controls the flow of current by using a reverse voltage at the gate, and it works in
different regions like the ohmic, active (saturation), and pinch-off regions. A MOSFET uses an
insulated gate and can control current more easily. It is used a lot in both digital and analog
circuits. The output characteristics show how current changes with drain voltage, and the transfer
characteristics show how current changes with gate voltage. Learning about these helps us design
amplifiers, switches, and logic devices. In summary, FETs are fast, small, and reliable, which
makes them useful in many electronic systems.

References

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applications
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