A562
—PNP Silicon—
PNP Transistors
■■ APPLICATION:Audio Low Frequency Power Amplifier Applications.
■■ MAXIMUM RATINGS(Ta=25℃)
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO -35 V
Collector-emitter voltage VCEO -30 V
Emitter-base voltage VEBO -5 V
Collector current IC -0.5 A
Collector Power Dissipation PC 0.3 W
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55~150 ℃
■■ ELECTRICAL CHARACTERISTICS(Ta=25℃,RG=10 )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Collector-Base Breakdown Voltage BVCBO -35 V IC=-20uA IE=0
Collector-Emitter Breakdown Voltage BVCEO -30 V IC=-1mA IB=0
Emitter-Base Breakdown Voltage BVEBO -5 V IE=-20uA IC=0
Collector Cut-off Current ICBO -0.1 uA VCB=-35V IE=0
Emitter Cut-off Current IEBO -0.1 uA VEB=-3V IC=0
Base-Emitter Voltage VBE -0.8 -1 V VCE=-1V IC=-0.1A
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC=-0.1A IB=-10mA
Base-Emitter Saturation Voltage VBE(sat) -1 V IC=-0.1A IB=-10mA
DC Current Gain HFE 70 400 & VCE=-1V IC=-0.1A
Gain bandwidth product fT 80 MHz VCE=-10V IC=-1mA
Common Base Output Capacitance Cob 4 7 pF VCB=-10V IE=0 f=1MHz
■■HFE Classification And Marking
Print Mark A562
Classification O Y GR
HFE 70~140 120~240 200~400