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CNY17 Data Sheet

The CNY17 is an optocoupler featuring a gallium arsenide infrared emitting diode coupled to a silicon NPN phototransistor, designed for high electrical isolation and signal transmission. It has an isolation test voltage of 5000 VRMS and is suitable for replacing relays and transformers in various applications. The document includes detailed specifications, maximum ratings, and agency approvals for the device.
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0% found this document useful (0 votes)
53 views8 pages

CNY17 Data Sheet

The CNY17 is an optocoupler featuring a gallium arsenide infrared emitting diode coupled to a silicon NPN phototransistor, designed for high electrical isolation and signal transmission. It has an isolation test voltage of 5000 VRMS and is suitable for replacing relays and transformers in various applications. The document includes detailed specifications, maximum ratings, and agency approvals for the device.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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CNY17

www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
• Isolation test voltage: 5000 VRMS
• Long term stability
• Industry standard dual-in-line package
A 1 6 B • Material categorization:
For definitions of compliance please see
C 2 5 C www.vishay.com/doc?99912
NC 3 4 E
AGENCY APPROVALS
• Underwriters lab file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5)
i179004-14
• BSI IEC 60950, IEC 60065
DESCRIPTION • FIMKO
The CNY17 is an optically coupled pair consisting of a • CQC
gallium arsenide infrared emitting diode optically coupled to
a silicon NPN phototransitor.
Signal information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical
isolation between input and output.
The CNY17 can be used to replace relays and transformers
in many digital interface applications, as well as analog
applications such as CRT modulation.

ORDERING INFORMATION
DIP-6 Option 6
C N Y 1 7 - # X 0 # # T

PART NUMBER CTR PACKAGE OPTION TAPE 7.62 mm 10.16 mm


BIN AND
Option 7 Option 9
REEL

> 8 mm 8 mm typ.

AGENCY CERTIFIED/PACKAGE CTR (%)


UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17-1 CNY17-2 CNY17-3 CNY17-4
DIP-6, 400 mil, option 6 CNY17-1X006 CNY17-2X006 CNY17-3X006 CNY17-4X006
SMD-6, option 7 CNY17-1X007T (1) CNY17-2X007T (1) CNY17-3X007T (1) CNY17-4X007T (1)
SMD-6, option 9 CNY17-1X009T (1) CNY17-2X009T (1) CNY17-3X009T (1) CNY17-4X009T (1)
VDE, UL, CUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17-1X001 CNY17-2X001 CNY17-3X001 CNY17-4X001
DIP-6, 400 mil, option 6 CNY17-1X016 CNY17-2X016 CNY17-3X016 CNY17-4X016
SMD-64, option 7 CNY17-1X017 CNY17-2X017T (1) CNY17-3X017T (1) CNY17-4X017T (1)
SMD-6, option 9 - CNY17-2X019T (1) - -
Note
(1) Also available in tubes, do not put T on the end.

Rev. 1.9, 25-Oct-12 1 Document Number: 83606


For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY17
www.vishay.com
Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)


PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp ≤ 10 μs IFSM 2.5 A
LED power dissipation at 25 °C Pdiss 70 mW
OUTPUT
Collector emitter breakdown voltage BVCEO 70 V
Emitter base breakdown voltage BVEBO 7 V
IC 50 mA
Collector current
tp/T = 0.5, tp ≤ 10 ms IC 100 mA
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage between emitter and detector t=1s VISO 5000 VRMS
Creepage distance ≥7 mm
Clearance distance ≥7 mm
Isolation thickness between emitter and detector ≥ 0.4 mm
Comparative tracking index per
≥ 175
DIN IEC 112/VDE 0303, part 1
VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
Isolation resistance
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 110 °C
Soldering temperature (1) 2 mm from case, ≤ 10 s Tsld 260 °C
Total power dissipation Pdiss 220 mW
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)


PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA VF 1.39 1.65 V
Breakdown voltage IR = 10 μA VBR 6 V
Reverse current VR = 6 V IR 0.01 10 μA
Capacitance VR = 0 V, f = 1 MHz CO 25 pF
Thermal resistance Rth 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 5.2 pF
Collector base capacitance VCE = 5 V, f = 1 MHz CCB 6.5 pF
Emitter base capacitance VCE = 5 V, f = 1 MHz CEB 7.5 pF
Thermal resistance Rth 500 K/W
COUPLER
Collector emitter, saturation voltage VF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V
Coupling capacitance CC 0.6 pF
CNY17-1 ICEO 2 50 nA
CNY17-2 ICEO 2 50 nA
Collector emitter, leakage current VCE = 10 V
CNY17-3 ICEO 5 100 nA
CNY17-4 ICEO 5 100 nA
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.

Rev. 1.9, 25-Oct-12 2 Document Number: 83606


For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY17
www.vishay.com
Vishay Semiconductors

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)


PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
CNY17-1 CTR 40 80 %
CNY17-2 CTR 63 125 %
VCE = 5 V, IF = 10 mA
CNY17-3 CTR 100 200 %
CNY17-4 CTR 160 320 %
IC/IF
CNY17-1 CTR 13 30 %
CNY17-2 CTR 22 45 %
VCE = 5 V, IF = 1 mA
CNY17-3 CTR 34 70 %
CNY17-4 CTR 56 90 %

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)


PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
LINEAR OPERATION (without saturation)
Turn-on time IF = 10 mA, VCC = 5 V, RL = 75 Ω ton 3 μs
Rise time IF = 10 mA, VCC = 5 V, RL = 75 Ω tr 2 μs
Turn-off time IF = 10 mA, VCC = 5 V, RL = 75 Ω toff 2.3 μs
Fall time IF = 10 mA, VCC = 5 V, RL = 75 Ω tf 2 μs
Cut-off frequency IF = 10 mA, VCC = 5 V, RL = 75 Ω fCO 110 kHz
SWITCHING OPERATION (with saturation)
IF = 20 mA CNY17-1 ton 3 μs
CNY17-2 ton 4.2 μs
Turn-on time IF = 10 mA
CNY17-3 ton 4.2 μs
IF = 5 mA CNY17-4 ton 6 μs
IF = 20 mA CNY17-1 tr 2 μs
CNY17-2 tr 3 μs
Rise time IF = 10 mA
CNY17-3 tr 3 μs
IF = 5 mA CNY17-4 tr 4.6 μs
IF = 20 mA CNY17-1 toff 18 μs
CNY17-2 toff 23 μs
Turn-off time IF = 10 mA
CNY17-3 toff 23 μs
IF = 5 mA CNY17-4 toff 25 μs
IF = 20 mA CNY17-1 tf 11 μs
CNY17-2 tf 14 μs
Fall time IF = 10 mA
CNY17-3 tf 14 μs
IF = 5 mA CNY17-4 tf 15 μs
IF IF +5V
IF
0
0
tp t
IC
R G = 50 Ω 100 %
tp 90 %
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L = 1 MΩ 10 %
Channel II
C L = 20 pF 0
50 Ω RL tr
td tf t
ts
t on t off
95 10804-3
tp Pulse duration ts Storage time
Fig. 1 - Test Circuit, Non-Saturated Operation td Delay time tf Fall time
+5V tr Rise time t off (= ts + tf) Turn-off time
IF I F = 10 mA
t on (= td + tr) Turn-on time
0 96 11698
IC
Fig. 3 - Switching Times
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L ≥ 1 MΩ
Channel II
C L ≤ 20 pF
50 Ω 1 kΩ

95 10843
Fig. 2 - Test Circuit, Saturated Operation

Rev. 1.9, 25-Oct-12 3 Document Number: 83606


For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY17
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

1.8 10 000
1.7 IF = 0 mA
Tamb = 0 °C 1000
1.6

ICE0 - Leakage Current (nA)


VF - Forward Voltage (V)

Tamb = - 25 °C VCE = 40 V
1.5
100
1.4 Tamb = - 40 °C
1.3 T = - 55 °C 10 VCE = 24 V
amb
1.2
1.1 1 VCE = 12 V
Tamb = 25 °C
1.0
Tamb = 50 °C 0.1
0.9
0.8 Tamb = 75 °C
0.01
0.7 Tamb = 100 °C
0.6 0.001
0.1 1 10 100 - 60 - 40 - 20 0 20 40 60 80 100
IF - Forward Current (mA) Tamb - Ambient Temperature (°C)

Fig. 4 - Forward Voltage vs. Forward Current Fig. 7 - Leakage Current vs. Ambient Temperature

60 1.2
VCE = 5 V
IF = 10 mA
IF = 30 mA CTRNorm - Normalized CTR (NS)
50 1.0
IC - Collector Current (mA)

IF = 5 mA
40 0.8
IF = 20 mA
30 0.6
IF = 15 mA
IF = 1 mA
20 0.4
IF = 10 mA

10 IF = 5 mA 0.2

0 0
0 1 2 3 4 5 6 7 8 - 60 - 40 - 20 0 20 40 60 80 100
VCE - Collector Emitter Voltage (NS) (V) Tamb - Ambient Temperature (°C)

Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 8 - Normalized CTR (NS) vs. Ambient Temperature

25 1.2
IF = 25 mA VCE = 0.4 V
IF = 10 mA
CTRNorm - Normalized CTR (sat)

1.0
IC - Collector Current (mA)

20
IF = 5 mA
0.8
15
IF = 10 mA 0.6
10 IF = 1 mA
0.4
IF = 5 mA
5
0.2
IF = 1 mA IF = 2 mA

0 0
0 0.1 0.2 0.3 0.4 - 60 - 40 - 20 0 20 40 60 80 100
VCE - Collector Emitter Voltage (sat) (V) Tamb - Ambient Temperature (°C)

Fig. 6 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 9 - Normalized CTR (sat) vs. Ambient Temperature

Rev. 1.9, 25-Oct-12 4 Document Number: 83606


For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY17
www.vishay.com
Vishay Semiconductors

1.2 1000
VCE = 5 V VCC = 5 V
CTRNorm - Normalized CTR (NS)

fCTR - CTR Frequency (kHz)


1.0 Tamb = 25 °C
Tamb = 0 °C
0.8 Tamb = - 40 °C 100

Tamb = - 55 °C
0.6

0.4 Tamb = 50 °C 10

Tamb = 75 °C
0.2
Tamb = 100 °C
0 1
0.1 1 10 100 0.1 1 10 100
IF - Forward Current (mA) IC - Collector Current (mA)

Fig. 10 - Normalized CTR (NS) vs. Forward Current Fig. 13 - CTR Frequency vs. Collector Current

1.2 1000
VCE = 0.4 V VCE = 5 V, IF = 10 mA
CTRNorm - Normalized CTR (sat)

toff

ton, toff - Switching Time (μs)


1.0 Tamb = 25 °C
Tamb = 0 °C 100
0.8 Tamb = - 40 °C

Tamb = - 55 °C
0.6 10

ton
0.4 Tamb = 50 °C
Tamb = 75 °C 1
0.2
Tamb = 100 °C
0 0.1
0.1 1 10 100 0.1 1 10 100
IF - Forward Current (mA) RL - Load Resistance (kΩ)

Fig. 11 - Normalized CTR (sat) vs. Forward Current Fig. 14 - Switching Time vs. Load Resistance

0
VCE = 5 V
- 20

- 40
Phase (deg)

- 60

- 80

- 100

- 120

- 140

- 160
1 10 100 1000
f - Frequency (kHz)

Fig. 12 - CTR Frequency vs. Phase Angle

Rev. 1.9, 25-Oct-12 5 Document Number: 83606


For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY17
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6 5 4

6.5 ± 0.5

1 2 3

7.3 ± 0.5 7.62 ± 0.3

1.1 ± 0.1
3.5 ± 0.3

0.5 typ.

2.8 ± 0.5 3.3 ± 0.5

0.5 ± 0.1 0.26


2.54 ± 0.25
7.62 to 9.98
22530

Option 6 Option 7 Option 9

7.62 typ. 7.62 typ.


7.62 typ.

3.5 ± 0.3 0.35 ± 0.25 3.5 ± 0.3 0.1 ± 0.1 3.5 ± 0.3

0.1 min.
0.6 min.
2.7 min. 8 min. 0.6 min. 8.16 ± 0.8
10.16 typ.
10.3 max. 10.16 ± 0.3

0.76 0.76
R 0.25 R 0.25
2.54 2.54
1.78 1.78
8 min. 1.52 8 min. 1.52
20802-34 11.05 11.05

PACKAGE MARKING
CNY17-3

Pin 1 I.D.
V YWW 25

Notes
• VDE logo is only marked on option 1 parts. Option information is not marked on the part.
• Tape and reel suffix (T) is not part of the package marking.

Rev. 1.9, 25-Oct-12 6 Document Number: 83606


For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY17
www.vishay.com
Vishay Semiconductors
TUBE AND TAPE INFORMATION

DEVICES PER TUBE


TYPE UNITS/TUBE TUBES/BOX UNITS/BOX
DIP-6 50 40 2000

Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1

7.5 ± 0.1

16 ± 0.3

12 ± 0.1
0.3 ± 0.05

22537-1

Fig. 15 - Tape and Reel Drawing, 1000 Units per Reel

Rev. 1.9, 25-Oct-12 7 Document Number: 83606


For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy


Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12 1 Document Number: 91000

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