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Electronic Devices and Circuits Exam Guide

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Bheem Saharan
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0% found this document useful (0 votes)
15 views2 pages

Electronic Devices and Circuits Exam Guide

Uploaded by

Bheem Saharan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Roll No. .........................

Total Pages : 4 (b) Calculate the load voltage, load current and diode power
of the following circuit using Thevenin’s theorem. Take
CMDQ/D-23 4437 the forward voltage drop across the diode 0.7V. 6
ELECTRONIC DEVICES AND CIRCUITS–I
Paper–PHY–104

Time Allowed : 3 Hours] [Maximum Marks : 60

Note : Attempt five questions in all, selecting one question from


each Unit. Question No. 1 is compulsory. All questions
carry equal marks. 3. (a) Justify the need of clamping circuits. Further explain the
operation of clamping circuit which can clamp a sinusoidal
Compulsory Question
signal at + VR volts. 6
1. (a) What are ohmic contacts? How these are made? 3
(b) Find the resistivity of intrinsic Si at 300K. Also find the
(b) How one can control the reverse saturation current ICO resistivity of it if it is doped with n type impurities to the
in a BJT amplifier? 3 extent of 1 part in 108 Si atoms. Take Si atoms/cm3 =
5 × 1022, µn=1300cm2/Vs and µp= 500cm2/Vs. 6
(c) What are cross-over distortions? How these can be
eliminated? 3 UNIT–II

(d) Justify the need of composite amplifier designs. 3 4. (a) Under what operating conditions, an h-parameters model
is developed for BJT amplifiers? Further develop an
UNIT–I
h-parameters model for a CC BJT amplifier. 6
2. (a) A semiconductor is doped with both donors and acceptors
of concentrations ND and NA, respectively. Develop (b) What do you understand by bias compensation
expressions from which to determine the electron and techniques? Explain one such technique to deal with
hole concentrations. 6 ICO variations. 6

4437/K/525/200 P. T. O. 4437/K/525/200 2
5. (a) In the circuit shown, if VBE= 0.6V, β = 50, and (b) Draw the circuit diagram of a two stage RC-coupled
IC = 4V. Determine the values of RB, IB and VCE. 6 CE amplifier and explain the role of each component in
the circuit. Also discuss its mid frequency response.
6

UNIT–IV

8. (a) Describe, through suitable mathematical expressions, the


performance of a Zener diode shunt voltage regulator.
Also list its advantages and disadvantages. 6

(b) Describe the operation of a class-B push-pull amplifier.


Further mention its advantages and disadvantages. 6

9. (a) What are heat sinks and how we can design heat sinks
for power amplifier circuits? 6

(b) Explain the operation of shunt BJT voltage regulator


and also find an expression for its input regulation factor.
(b) Discuss the effect of negative feedback on the input 6
resistance of an amplifier. 6

UNIT–III

6. (a) Describe CE-CC and CC-CC Darlington pair amplifiers.


6

(b) Discuss the low and mid frequency response of a direct


coupled CE amplifier. 6

7. (a) What are various noises present in an amplifier circuit?


How can noise present in an amplifier be quantified?
6

4437/K/525/200 3 P. T. O. 4437/K/525/200 4

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