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BJT Characteristics in CE Configuration

This document outlines the procedure to plot the input and output characteristics of a bipolar junction transistor in common emitter configuration. The input characteristics are obtained by varying the base-emitter voltage and measuring the corresponding base current at different collector-emitter voltages. The output characteristics are obtained by varying the collector-emitter voltage and measuring the corresponding collector current at different base currents. The key transistor parameters such as input impedance, forward current gain, reverse voltage gain, and output admittance are then calculated from the input and output graphs.

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Sibi Chakravarthy
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125 views5 pages

BJT Characteristics in CE Configuration

This document outlines the procedure to plot the input and output characteristics of a bipolar junction transistor in common emitter configuration. The input characteristics are obtained by varying the base-emitter voltage and measuring the corresponding base current at different collector-emitter voltages. The output characteristics are obtained by varying the collector-emitter voltage and measuring the corresponding collector current at different base currents. The key transistor parameters such as input impedance, forward current gain, reverse voltage gain, and output admittance are then calculated from the input and output graphs.

Uploaded by

Sibi Chakravarthy
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

S. S. N.

COLLEGE OF ENGINEERING

CHARACTERISTICS OF BJT CE CONFIGURATION


AIM: To plot the input and output characteristics of a Bipolar Junction Transistor in Common Emitter Configuration. EQUIPMENTS & COMPONENTS REQUIRED: Sl. No. 1 2 3 4 5 6 7 Equipments & Components RPS Transistor Ammeter Voltmeter Resistor Bread Board Connecting wires Range/ Specification (0-30) V BC 107/ BC 547 (0-30) mA, (0-150) A (0-1) V, (0-30) V 1 K Quantity 2 1 1 each 1 each 2 1 As required

THEORY: The transistor is a semiconductor device having three layers called emitter, base and collector. It consists of two diodes namely emitter base diode and collector base diode connected back to back. Bipolar Junction Transistor is classified into NPN and PNP transistor. The doping varies between the three layers. Always the emitter base junction is forward biased and collector base is reverse biased. The DC characteristics are divided into INPUT and OUTPUT characteristics. PROCEDURE: INPUT CHARACTERISTICS: (1)Connect the circuit as per the circuit diagram. (2) Set VCE = 0V, vary VBB and note down the corresponding IB and VBE. Repeat the above procedure for VCE = 5V, 10V, 15V, etc. (3) Plot the graph: VBE Vs IB for a constant VCE. (4) Find the h- parameters. Input Impedance, hie =

VBE | VCE = const I B VBE | I B = const VCE

Reverse Voltage Gain, hre =

Prepared by B. RAMANI, Assistant Professor/ECE

S. S. N. COLLEGE OF ENGINEERING OUTPUT CHARACTERISTICS: (1) Connect the circuit as per the circuit diagram. (2) Set IB = 10A, vary VCC and note down the corresponding IC and VCE. Repeat the above procedure for IB = 20 A, 30A, 40A etc. (3) Plot the graph: VCE Vs IC for a constant IB. (4) Find the h- parameters. Forward Current Gain, h fe =

I C | VCE = const I B

Output Admittance, hoe =

I C | I B = const VCE

CIRCUIT DIAGRAM:

PIN DIAGRAM:

Prepared by B. RAMANI, Assistant Professor/ECE

S. S. N. COLLEGE OF ENGINEERING

MODEL GRAPH:

Input Characteristics

Output Characteristics

Prepared by B. RAMANI, Assistant Professor/ECE

S. S. N. COLLEGE OF ENGINEERING

TABULAR COLUMN: INPUT CHARACTERISTICS:


VCE = _______ volts VBE (volts) IB (A) VCE = _______ volts VBE (volts) IB (A) VCE = ______ volts VBE (volts) IB (A)

OUTPUT CHARACTERISTICS:
IB = _______ A VCE (volts) IC (mA) IB = _______ A VCE (volts) IC (mA) IB = _______ A VCE (volts) IC (mA)

Prepared by B. RAMANI, Assistant Professor/ECE

S. S. N. COLLEGE OF ENGINEERING CALCULATIONS:

RESULT: Thus the input and output characteristics of the given transistor are plotted and the parameters are calculated as hie = _______ (ohms) hfe = _______ (no unit) hre = _______ (no unit) hoe = _______ (mhos)

Prepared by B. RAMANI, Assistant Professor/ECE

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