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SD1411

The SD1411 is a silicon NPN transistor designed for HF and VHF telecommunications, featuring gold metallization for high reliability and ruggedness. It has a minimum output power of 200 W with a gain of 16 dB and operates under a maximum collector-emitter voltage of 55 V. The device specifications include a power dissipation of 330 W and a junction temperature rating of +200 °C.

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0% found this document useful (0 votes)
5 views4 pages

SD1411

The SD1411 is a silicon NPN transistor designed for HF and VHF telecommunications, featuring gold metallization for high reliability and ruggedness. It has a minimum output power of 200 W with a gain of 16 dB and operates under a maximum collector-emitter voltage of 55 V. The device specifications include a power dissipation of 330 W and a junction temperature rating of +200 °C.

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enrique
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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SD1411

RF & MICROWAVE TRANSISTORS


HF SSB APPLICATIONS

.. 30 MHz

.. 40 VOLTS
IMD −30 dB

.. COMMON EMITTER
GOLD METALLIZATION
POUT = 200 W MIN. WITH 16 dB GAIN
.400 x .425 6LFL (M153)
epoxy sealed
ORDER CODE BRANDING
SD1411 SD1411

PIN CONNECTION

DESCRIPTION
The SD1411 is a silicon NPN transistor designed
for telecommunications in HF and VHF frequency
bands. This device utilizes gold metallized die with 1. Collector 3. Emitter
diffused emitter resistors to achieve high reliability 2. Base
and ruggedness.

ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)


Symbol Parameter Value Unit
VCBO Collector-Base Voltage 110 V
VCEO Collector-Emitter Voltage 55 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 40 A
PDISS Power Dissipation 330 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature − 65 to +150 °C

THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 0.36 °C/W

October 1992 1/3


SD1411
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Value
Symbol Test Conditions Unit
Min. Typ. Max.
BVCBO IC = 200mA IE = 0mA 110 — — V
BVCES IC = 200mA VBE = 0V 110 — — V
BVCER IC = 200mA RBE = 10Ω 100 — — V
BVCEO IC = 200mA IB = 0mA 55 — — V
BVEBO IE = 20mA IC = 0mA 4.0 — — V
ICES VCE = 45V IE = 0mA — — 20 mA
hFE VCE = 6V IC = 10A 15 — 80 —

DYNAMIC
Value
Symbol Test Conditions Unit
Min. Typ. Max.
POUT f = 30 MHz VCE = 40 V ICQ = 150 mA 200 — — W
GP f = 30 MHz VCE = 40 V ICQ = 150 mA 16 — — dB
IMD f = 30 MHz VCE = 40 V ICQ = 150 mA — — −30 dB
COB f = 1 MHz VCB = 50 V — — 360 pF

2/3
SD1411

PACKAGE MECHANICAL DATA

Ref.: Dwg. No.12-0153

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

© 1994 SGS-THOMSON Microelectronics - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES


Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

3/3
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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