A PROJECT PRESENTATION

ON
TO STUDY APPLICATION OF
SUBSTRATE INTEGRATED WAVEGUIDE
IN MICROWAVE ENGINEERING

Guide:
PRESENTED BY:
Mr. ABHISHEK SARKHEL
DURGA PRASAD PURBEY
Assistant Professor, T17ec009
Department of ECE, 2nd semester, [Link]. (ECE),
NIT MEGHALAYA, SHILLONG NIT MEGHALAYA, SHILLONG
Contents
Introduction Of Substrate Integrated Waveguide(SIW)
Design Equation of SIW
Loss Mechanism In SIW
Field Behaviour In SIW
Mode Characteristic Analysis In SIW
1. Full Mode SIW
2. Half Mode SIW
[Link] Mode SIW
Conclusion
References
Introduction Of Substrate Integrated Waveguide (SIW)
• The substrate integrated waveguides are rectangular waveguides formed by two
solid conductor planes, separated by a dielectric substrate, with conductor sidewalls
emulated by rows of metalized through-plated vias [1](see in fig:-(1)).

Metal vias
s

W
h
Dielectric substrate
Fig:-(1) SIW Structure

• In fig:-(1) presents the geometric parameters for via diameter, via spacing,
waveguide physical width, and substrate height as: D, s, W, and h, respectively.
Design Equation of SIW:
• A SIW cavity
ε𝑟
can be designed by using the relations (1.a), (1.b) and (1.c) provided
that S < λ0 and S < 4D with ε𝑟 relative permittivity [2],
2
𝑐 𝑚𝜋2 𝑛𝜋2
F𝑐= + ………… 1.a
2𝜋 𝜀𝑟 𝑎 𝑏

𝐷2 s
𝑊𝑒𝑓𝑓 = 𝑊𝑠𝑖𝑤 − ……… 1.b
0.95𝑆

• Relation {1(b)} was subsequently refined as:

𝐷2 𝐷2
𝑊𝑒𝑓𝑓 = 𝑊𝑠𝑖𝑤 − 1.08 + 0.1 ……… 1.c
𝑆 𝑊𝑠𝑖𝑤
Fig:-(2) SIW Guide

• The parameters D and S are the diameter of the metallic via and the period of via
holes respectively and 𝑊𝑠𝑖𝑤 is the distance between the rows of the centres of via.
• 𝑊𝑒𝑓𝑓 is the width correction factor and its value between 𝑊𝑠𝑖𝑤 and 𝑊𝑠𝑖𝑤 − 𝐷 [2] .
Continued
• The width of the waveguide is determined by the desired cutoff frequency of the
dominant mode.
• The spacing between the vias controls the amount of field leakage out of the
waveguide.

Fig:-3. Leakage loss versus cylinder radius R and cylinder spacing W of the SIW.
Loss Mechanism In SIW
• There are mainly three mechanisms of loss in the SIW structures.

• Radiation Loss - Radiation leakage is due to gap between metal vias which spoil
the shielding of SIW structure. It is minimum if ratio between the longitudinal
𝑠 𝑠
spacing and the via diameter is < 2.5 and practical design rule = 2.
𝑑 𝑑

• Dielectric Loss - 𝛼𝑑 contribution less significant when operates at high frequency.

𝐾2
𝛼𝑑 = 𝑡𝑎𝑛𝛿 …………………. 1.d [3]
2𝛽
It can be reduced only by using a better dielectric substrate.

• Conductor Loss - attenuation constant (𝛼𝑐 ) almost proportional to the inverse of

substrate thickness h. conductor losses can be significantly reduced by increasing
the substrate thickness.
Field Behaviour In SIW
• Only 𝑇𝐸𝑚0 modes are supported in an SIW with via sidewalls because
of the discontinuous structure of the sidewall.

Fig:-4(a) 𝑇𝐸10 surface current distribution on a RWG with narrow slots opening the sides.

Fig:-4(b) Fundamental mode of SIW in cross-section view

Full Mode Analysis In SIW
• The resonant frequency of the 𝑇𝐸𝑚𝑛𝑝 mode of the square SIW resonator can be calculated
based on this equation (1.e)[4] ,

𝑠𝑖𝑤 1 𝑚𝜋 2 𝑛𝜋 2 𝑝𝜋 2
𝐹𝑚𝑛𝑝 = ( ) +( ) +( ) ……………………….... 1.e
2𝜋 𝜇𝜀 𝐿𝑒𝑓𝑓 𝑠𝑖𝑤 ℎ 𝑊𝑒𝑓𝑓 𝑠𝑖𝑤
Where m=1,2,…, n=1,2,…, p=1,2,…, and, μ, ε are the permeability and permittivity of the
substrate, respectively. The thickness of the SIW resonator is h. The equivalent length and
width (𝐿𝑒𝑓𝑓 𝑠𝑖𝑤 and 𝑊𝑒𝑓𝑓 𝑠𝑖𝑤 ) are calculate by these equation (1.f and 1.g) [5] ,
𝑠𝑖𝑤 𝐷1 2 𝐷1 2
𝐿𝑒𝑓𝑓 = 𝐿𝑐 − 1.08 + 0.1 ………………………………………………………. 1.f
𝑉3 𝐿𝑐

𝑠𝑖𝑤 𝐷1 2 𝐷1 2
𝑊𝑒𝑓𝑓 = 𝑊𝑐 − 1.08 + 0.1 ……………………………………. 1.g
𝑉3 𝑊𝑐

where 𝐿𝑐 and 𝑊𝑐 are the length and width of square SIW and 𝐷1 and 𝑉3 are the via diameter
and the spacing between adjacent vias, respectively.
Continued
• Using these equation design a structure in Ansys HFSS tool see fig:-(5)
z

𝑳𝒄

𝑩𝟐

x
𝑩𝟏

𝑾𝒄

Fig:-(5) Designed Structure of square SIW with parameters of h=1.57mm,

𝐵1 =𝐵2 =16 mm and 𝐿𝑐 =𝑊𝑐 = 2𝐵1 ,𝐷1 = 0.6 mm and 𝑉3 =1.09 mm,
Continued
• In this mode analysis resonant frequencies obtained using relation (1.e, 1.f and 1.g)
are listed in table-1, here taking n=0 due to the large ratio of SIW width to height,
only 𝑇𝐸𝑚0𝑝 modes can resonate in the SIW and all 𝑚 and 𝑝 with 𝑚 ≤ 𝑝 ≤ 5 is
taken.
Table-1
m p 1 2 3 4 5

1 6.41 GHz 10.15 14.35 18.71 23.14

2 12.84 16.37 20.30 24.45

3 19.26 22.70 26.47

4 25.68 29.07

5 32.10
Continued
• After simulation return loss characteristics are shown in figure (6),

Fig:-(6) Return Loss characteristics of the designed square SIW structure

• It is observed that there are four resonant frequencies that are 5.72, 8.77, and 11.17
GHz and 13.39 GHz.
Continued
• It is observed that there are four resonant frequencies that are characterized into three
different resonant modes. The predicted resonances for the 𝑇𝐸101 , 𝑇𝐸102 , and 𝑇𝐸202
modes are excited at 5.72, 8.77, and 11.17 GHz, respectively. Their electric field
distributions and corresponding current distribution are plotted in fig:-(7),(8) and fig:-
(9),

(b)

(a) (c)
Fig:-7(a) Electric field distribution observed 𝑇𝐸101 at 5.72 GHz; (b) current distribution of 𝑇𝐸101 ,front view;
(c) 3Dimensional view of propagation mode of 𝑇𝐸101 mode
Continued

(b)

(a) (c)
Fig:-8(a) Electric field distribution observed 𝑇𝐸102 mode at 8.77 GHz; (b)&(c) Current distribution
of 𝑇𝐸102 mode.
Continued

(b)

(a) (c)
Fig:-9(a) Electric field distribution observed 𝑇𝐸202 mode at 11.17 GHz; (b) Current distribution
front view of 𝑇𝐸202 mode; (c) 3Dimensional view of propagation mode of 𝑇𝐸202 mode.
Half Mode Analysis In SIW
• If the square SIW is bisected into two part along quasi magnetic wall, each part is
called half mode SIW.

• Due to large SIW width-to-height ratio, the normal magnetic field is equal to zero at
these symmetrical planes.

• HMSIW structure is defined same as square SIW using those equation of square SIW.
In HMSIW only change value of 𝑊𝑒𝑓𝑓 𝑠𝑖𝑤 such that,
ℎ𝑚𝑠𝑖𝑤 𝑊𝑒𝑓𝑓 𝑠𝑖𝑤
𝑊𝑒𝑓𝑓 = + 𝛥𝑊 ……………………………………… 1.h
2
Here, 𝛥𝑊 is the additional width such that,
0.30 𝑊𝑒𝑓𝑓 𝑠𝑖𝑤 52𝑊𝑒𝑓𝑓 𝑠𝑖𝑤 −261 38
𝛥𝑊 = ℎ 0.05 + ∗ ln(0.79 + + + 2.77) …… 1.i [6]
𝜀𝑟 4ℎ3 ℎ2 ℎ
Continued
• Considering above relation design a half mode SIW in Ansys HFSS tool see fig:-(10),
z

𝑩𝟐

x
𝑩𝟏

Fig:-(10) Designed half mode Structure with parameters of h=1.57mm, 𝐵1 =𝐵2 =16
mm and 𝐿𝑐 =𝑊𝑐 = 2𝐵1 ,𝐷1 = 0.6 mm and 𝑉3 =1.09 mm.
Continued
• After simulation return loss characteristics are shown in figure (11),

Fig:-(11) Return Loss characteristics of the designed half mode SIW structure

• It is observed that there are four resonant frequencies that are 6.22,8.66,10.88 and
12.55 GHz.
Continued
• The predicted resonances for the 𝑇𝐸101 𝐻𝑀 , 𝑇𝐸102 𝐻𝑀 , and 𝑇𝐸202 𝐻𝑀 modes are
excited at 8.66, 10.77, and 12.66 GHz, respectively. Their electric field distributions
and corresponding current distribution are plotted in fig:-(12),(13) and fig:-(14),

(b)

(a) (c)
Fig:-12(a) Electric field distribution observed 𝑇𝐸101 at 8.66 GHz; (b) current distribution of
𝑇𝐸101 ,front view; (c) 3Dimensional view of propagation mode of 𝑇𝐸101 mode
Continued

(b)

(a) (c)
Fig:-13(a) Electric field distribution observed 𝑇𝐸202 at 10.88 GHz; (b) current distribution of
𝑇𝐸202 ,front view; (c) 3Dimensional view of propagation mode of 𝑇𝐸202 mode
Continued

(b)

(a) (c)
Fig:-14(a) Electric field distribution observed 𝑇𝐸102 at 12.55 GHz; (b) current distribution of
𝑇𝐸102 ,front view; (c) 3Dimensional view of propagation mode of 𝑇𝐸102 mode
Quarter Mode Analysis In SIW
• If the half mode SIW is bisected into two halves along quasi magnetic wall, each half is
called quarter mode SIW.
• Quasi magnetic wall exist in the x-direction in HMSIW.
• QMSIW is the quarter part of a square waveguide resonator so it preserves the quarter of
field distribution of square SIW.
• The resonant frequency of the 𝑇𝐸𝑚0𝑝 𝑄𝑀 mode of the rectangular SIW resonator can be
calculated based on this equation (1.j) [5],
𝑄𝑀𝑆𝐼𝑊 1 𝑚𝜋 𝑝𝜋
𝐹𝑚𝑛𝑝 = ( 𝑄𝑀𝑆𝐼𝑊 )2 +( 𝑄𝑀𝑆𝐼𝑊 )2 ………………………. 1.j
2𝜋 𝜇𝜀 2𝐿𝑒𝑓𝑓 2𝑊𝑒𝑓𝑓

where 𝑚 = 𝑝 = 1,2, … for QMSIW structure and 𝑊𝑒𝑓𝑓 𝑄𝑀𝑆𝐼𝑊 , 𝐿𝑒𝑓𝑓 𝑄𝑀𝑆𝐼𝑊 are the equivalent
width and length of the QMSIW defined as,
𝑊𝑒𝑓𝑓 𝑄𝑀𝑆𝐼𝑊 = 𝑊𝑒𝑓𝑓 𝐻𝑀𝑆𝐼𝑊
𝐿𝑒𝑓𝑓 𝑄𝑀𝑆𝐼𝑊 = 𝐿𝑒𝑓𝑓 𝐻𝑀𝑆𝐼𝑊
Continued
• Considering above relation design a half mode SIW in Ansys HFSS tool see fig:-
(15), z

𝑩𝟏
x

𝑩𝟐 𝑽𝟑
𝐷1

Fig:-(15) Designed Structure of QMSIW with h=1.57 mm, a width of 𝐿1 = 35 mm, and a length of 𝐿2 =40
mm. The via diameter 𝐷1 = 0.6 mm, and the spacing between adjacent vias 𝑉3 =1.09 mm. The length of the
legs of the QMSIW resonator is 𝐵1 = 𝐵2 =16 mm .
Continued
• In this mode analysis resonant frequencies obtained using relation (1.j) are listed in
table-2, here taking n=0 due to the large ratio of SIW width to height, only 𝑇𝐸𝑚0𝑝
modes can resonate in the SIW and all 𝑚 and 𝑝 with 𝑚 = 𝑝 = 1,2 is taken.
Table-2
m=p 1 2 3 4 5

Freq(GHz) 5.54 11.08 16.63 22.17 27.71

Continued
• After simulation return loss characteristics are shown in figure (16),

Fig:-(16) Return Loss characteristics of the designed Quarter mode SIW structure

• It is observed that there are two resonant frequencies that are 5 and 11.88
GHz.
Continued
• The predicted resonances for the 𝑇𝐸101 𝑄𝑀 and 𝑇𝐸202 𝑄𝑀 modes are excited at 5 and
11.88 GHz, respectively. Their electric field distributions and corresponding current
distribution are plotted in fig:-(17) and fig:-(18),
• In QMSIW 𝑇𝐸102 𝑄𝑀 doesn’t exist.

(b)

(a) (c)
Fig:-17(a) Electric field distribution observed 𝑇𝐸101 at 5 GHz; (b) current distribution of 𝑇𝐸101 ,front
view; (c) 3Dimensional view of propagation mode of 𝑇𝐸101 mode
Continued

(b)

(a) (c)
Fig:-18(a) Electric field distribution observed 𝑇𝐸202 at 11.88 GHz; (b) current distribution of
𝑇𝐸202 ,front view; (c) 3Dimensional view of propagation mode of 𝑇𝐸202 mode
Conclusion
• In this report we study about mode behaviour in SIW transition from full mode
SIW to QMSIW .

• Here we observe that SIW has less lossy in higher frequency range so its
application in millimeter frequency is useful.

• QMSIW configuration provides more compact structure to design and it has less cost
in fabrication. further I study this configuration through substrate integrated co-axial
line.
REFERENCE
1. D. Deslandes and K. Wu, Accurate Modeling, Wave Mechanisms, and Design Considerations of a
Substrate Integrated Waveguide, IEEE Trans. Microwave Theory & Tech ., VOL. 54, NO 6, pp.
2516-2526, JUN. 2006
2. Y. Cassivi, L. Perregrini, P. Arcioni, M. Bressan, K. Wu, and G. Conciauro,“Dispersion
characteristics of substrate integrated rectangular waveguide,” in IEEE Microwave Wireless
Compon. Lett., vol. 12, Sep. 2002, pp. 333–335.
3. Che, W. Q., D. P. Wang, K. Deng, and Y. L. Chow (2007), Leakage and ohmic losses investigation
in substrate integrated waveguide, Radio Sci., 42, RS5005.
4. D. M. Pozar, Microwave Engineering, Third Edition. New York, NY, USA: Wiley, 2004.
5. F. Xu and K. Wu, “Guided-wave and leakage characteristics of substrate integrated waveguide,”
IEEE Trans. Microw. Theory Tech., vol.53, no. 1, pp. 66–73, 2005.
6. Numerical Analysis, T. Sauer, Ed. Upper Saddle River, NJ, USA: Person Educ., 2006.
THANK YOU