BJT Switching Performance.
When base current is applied, a transistor does not
turn on instantly because of the presence of internal
capacitances.
The various switching waveforms of an npn power
transistor with resistive load between collector and
emitter.
When input voltage vB up to base circuit is made -
V₂ at to , junction is reverse biased EB. VBE = -V2 the
transistor is off, iB = Ic = 0 and vCE =VCC.
BJT Switching
Performance
At time t₁, input voltage vB
is made + V1 and iB rises to
IB1 as shown in Fig.
After t₁, base emitter
voltage vBE begins to rise
gradually from - V₂ and
collector current Ic begins to
rise from zero and
collector-emitter voltage
VCE starts falling from its
initial value Vcc.
After some time delay td
called time delay time, the
collector current rises to 0.1
Ics, VCE falls from Vcc to 0.9
Vcc and vBE reaches VBES
BJT Switching
Performance
This delay time is
required to charge the
base-emitter
capacitance to VBES
=0.7V.
Thus, delay time td is
defined as the time
during which the
collector current rises
from zero to
0.1 Ics and collector-
emitter voltage falls
from Vcc to 0.9 Vcc .
After delay time td,
collector current rises
from 0.1 Ics to 0.9 Ics and
VCE fall from 0.9 Vcc to
0.1 Vcc in time tr .
This time tr is known as
rise time which depends
upon transistor junction
capacitances.
Rise time tr , is defined as
the time during which
collector current rises
from 0.1 Ics to 0.9 Vcc and
collector-emitter voltage
falls from 0.9 Vcc to 0.1
Vcc. This show that total
turn -on time ton = td +tr.
In case transistor is to be
turned off, then input voltage
vB and input base current iB
are reversed. At time t2, input
voltage vB to base circuit is
reversed from V1 to - V2.
At the same time, base
current changes from IB1 to -
IB2 as shown in Fig.
Negative base current IB2
removes excess carriers from
the base.
The time ts required to
remove these excess carriers
is called storage time and
only after ts , base current IB2
begins to decrease towards
zero.
Transistor comes out of
saturation only after ts.
Storage time ts, is usually
defined as the time during
which collector current falls
from Ics to 0.9 Ics and
collector emitter voltage vCE
rises from VCES to 0.1 VCES.
Negative input voltage
enhances the process of
removal of excess carriers
from base and hence reduces
the storage time and
therefore, the turn-off time.
After ts collector current
begins to fall and
collector-emitter voltage
starts building
up.
Time tf called fall time, is
defined as the time during which
collector current drops from 0.9
Ics to 0.1 Ics and collector-emitter
voltage rises from 0.1 Vcc to 0.9
VCC.
Sum of storage time
and fall time gives the
transistor turn-off time
toff i.e . toff = ts +tf.
The various waveforms
during transistor switching
are shown in Fig. In this
figure, tn =
conduction period of
transistor, to = off period, T
= 1/f is the periodic time
and f is the switching
frequency.
