Transistor characteristics
Ramakrishna P., M.Tech.,PGDTC
Asst.Professor , Dept of ECE
COMMON COLLECTOR CONFIGURATION
In Common Collector Configuration, collector terminal is used as the
common terminal and is grounded. Base is treated as the input terminal
while emitter is considered as the output terminal.
IE
VBE E
IB
VEE
VEC
B
VBB
VBC VBC C
Common Collector Configuration is also known as Emitter Follower
Configuration.
• The input supply voltage between base and collector is denoted by VBC while
the output voltage between emitter and collector is denoted by VEC.
• In this configuration, input current or base current is denoted by IB and
output current or emitter current is denoted by IE.
INPUT CHARACTERISTICS:
• The input characteristics describe the relationship between input current (IB)
and input voltage (VBC) by keeping output voltage (VEC) constant.
• To determine the input characteristics, the output voltage VEC is kept constant
and the input voltage VBC is increased from zero volts to different voltage
levels.
• For each level of input voltage VBC, the corresponding input current IB is
noted.
• This procedure is repeated for different constant values of output voltage VEC.
VEC = VBC+VBE
VBE = VEC- VBC
OUTPUT CHARACTERISTICS:
• Plotted between output Voltage VEC and output current IE by keeping input
current IB constant.
• For each level of output voltage VEC, the corresponding output current IE is
noted.
• A curve is then drawn between output current IE and output voltage VEC at
constant input current IB (0 , 10, 20, 30, … μA , ).
• This procedure is repeated for different incremental values of input (base)
current IB and thus the characteristics are plotted.
TRANSISTOR CONFIGURATIONS ( NPN )
Common Base
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Collector
Configuration
TRANSISTOR AS A SWITCH
Cut Off Region:
• When both the Emitter-Base and Collector-Base junctions of
BJT are reverse biased, input (Base) current (IB) will be zero,
hence the output (Collector) current (IC) becomes zero.
• Width of the depletion regions increase with the increase in
the reverse bias voltages and thus no current flows through
transistor.
• Hence, the transistor can be considered as Open Switch
Saturation Region
• Both the Emitter-Base and Collector-Base junctions of the BJT
are forward biased.
• Base current will increase leading to an increase in the Output
Collector Current.
• Due to forward biasing of the junctions the width of depletion
layers will be small causing minimum Collector – Emitter voltage
drop.
• Thus, current flowing through the transistor will be maximum,
and the transistor can be operated as Closed Switch
TRANSISTOR SIWITCHING TIMES
• Switching times of the transistor describe the time taken by the
transistor to switch between the OFF and the ON States.
• The transistor switching times are defined by applying a pulse of
duration T at the input of the transistor.
• When the input pulse is applied, it takes some time for the transistor
(collector) current to reach the steady state value, due to the presence
of stray capacitances at the junctions of the transistor.
From the figure we can observe that the output current of the transistor is
starting after sometime (td)of the application of the input pulse.
• Time delay(td) − The time taken by the collector current to reach from
its initial value to 10% of its final value is called as the Time Delay.
• Rise time(tr) − The time taken for the collector current to reach from
10% of its initial value to 90% of its final value is called as the Rise
Time.
• Turn-on time (TON) − The sum of time delay (td) and rise time (tr) is
called as Turn-on time.
TON = td + tr
Storage time (ts) − The time interval between the trailing edge of the input
pulse to the 90% of the maximum value of the output, is called as the Storage
time.
Fall time (tf) − The time taken for the collector current to reach from 90% of its
maximum value to 10% of its initial value is called as the Fall Time.
• Turn-off time (TOFF) − The sum of storage time (ts) and fall time (tf) is defined
as the Turn-off time.
TOFF = ts + tf
• Pulse Width(W) − The time duration of the output pulse measured between
two 50% levels of rising and falling waveform is defined as Pulse Width.
1. Explain the construction and working of an NPN transistor.
2. Define Active, Saturation and Cut-off regions of operation of the
transistor.
3. What are the different configurations of a Bi-polar Junction Transistor?
4. With the help of neat circuit diagrams explain the Input and Output
characteristics of transistor in Common Base Configuration.
5. Plot and describe the input and output characteristics of BJT under
Common Emitter Configuration.
6. What is early effect? Explain in detail about this phenomenon.
7. Define the parameters of the transistor in Common Collector
Configuration and obtain a relation between the current gains of Common
Base (α) and Common Emitter Configurations (β).
8. Explain the working of a transistor switch.
9. What are the different switching times of the transistor? Explain.
10. Compare CB, CE and CC configurations.
