Emergence of Ferromagnetism from Planar Defects in EuSn₂As₂ Antiferromagnet

Аннотация

We report a study of nano-scale structural peculiarities of the antiferromagnetic layered semimetal EuSn₂As₂, and show that they are responsible for its puzzling magnetic properties. The high resolution transmission electron microscopy revealed the presence of planar defects in the lattice of the studied single crystals. Using a combination of microstructural and DFT analysis we demonstrated that a single planar nano-defects forms a layer of a distinct phase EuSnAs₂, that is different from the EuSn₂As₂ phase of the bulk lattice. The smaller distance between Eu layers in the planar nano-defect promotes formation of local ferromagnetic (FM) ordering of the Eu atoms. On average, the planar defects form a weak ferromagnetic phase in the antiferromagnetic (AFM) host lattice. The obtained results explain several puzzling features in magnetic properties of A-type AFM materials: the nonlinear magnetization in low in-plane fields, ferromagnetic-type hysteresis in low field, and the upturn of the magnetic susceptibility in the AFM state at temperatures approaching zero.

I Introduction

In recent years, great attention has been attracted by layered compounds with weak van der Waals (vdW) bonds between the layers of large spin atoms (Eu, Mn, Co, Cr) and charge reservoir layers of metal arsenides, phosphides, tellurides [2, 5, 1, 3, 4]. These stoichiometric semimetal compounds offer fascinating physics due to propagation of charged carriers in alternating magnetic field of the antiferromagnetically ordered host lattice. Both, topologically non-trivial (MnBi₂Te₄, EuIn₂As₂, EuCd₂As₂, etc.) [1, 5, 4, 7, 6, 8, 9] and trivial (EuSn₂As₂, EuFe₂As₂, EuSn₂P₂, EuMg₂Bi₂, etc.) [11, 10, 12, 13, 15, 7, 6, 14] materials are in the focus of research interest.

EuSn₂As₂, a representative layered semimetal was first synthesized by M. Q. Arguilla, et al. [11]. Its lattice consists of Eu-layers in the $ab$ plane alternating along the $c$ axis with pair of SnAs layers (Fig. 1). Due to rather small distance between Eu atoms within the layer, the ferromagnetic-type intralayer exchange interaction prevails and the large magnetic moments of Eu atoms align ferromagneticaly (FM) along the Eu layers (in the $ab$ plane). Upon cooling below $T_{N}\approx 24$K, the Eu layers align antiferromagnetically (AFM) and form an A-type AFM configuration [10], where the magnetization remains within $ab$ planes and rotates by $\pi$ from layer to layer (Fig. 1). As a result, the EuSn₂As₂ crystals exhibit text-book magnetic properties, conventional for easy-plane antiferromagnets: a linear magnetization field dependence extending up to the field of complete spin polarization, and a growth of the spin susceptibility in the paramagnetic state with cooling down to $T_{N}$ [10].

However, in addition to the conventional properties, the layered vdW antiferromagnets demonstrate some unusual features which were not understood and explained until now. For instance, in DC-magnetization measurements with EuSn₂As₂, a weak nonlinearity is often observed in low fields, $<0.03$ T, when field is applied in the easy magnetization $ab$-plane [6, 15]. The AC susceptibility, both in the $ab$-plane and in the perpendicular direction, below $T_{N}$ often shows an upturn towards lowest temperatures in the same low field range [10, 6, 7, 15]. In ref. [6], the $M(H)$ nonlinearity and the divergence of $\chi(T)$ towards $T=0$ was attributed to local disorder of magnetic moments. For a sister compound EuIn₂As₂, a hysteresis-like features in magnetization in the antiferromagnetic state was reported in Ref. [16], where this effect was proposed to originate from ferromagnetic polarons. Besides the $M(H)$ and $\chi(T)$ puzzling behavior, in electron spin resonance measurements [12, 17], in the AFM state of EuSn₂As₂, an additional resonance was observed, atypical for the AFM state. The temperature dependence of this unforeseen resonance was found to correlate with the AFM ordering temperature of the Eu sublattice. Consequently, it was conjectured in Ref. [12] that the additional line may originate from magnetic defects in the EuSn₂As₂ crystals. Nevertheless, to the best of our knowledge, no research followed to verify the above conjectures and to clarify the microscopic origin of the source of ferromagnetism in the layered AFM semimetals.

In order to shed a light on the these puzzling features, we performed and report here detailed microstructural investigation of several EuSn₂As₂ single crystals. The main outcome of our research is the detection and identification of about a monolayer thick planar defects in the layered host crystal. The defects are randomly distributed in the bulk with a total volume concentration of $\sim 3\%$.

We have identified the local composition of the planar defects and found that the defect layer has a local composition of EuSnAs₂, with an extra row of Eu atoms and missing Sn-atoms. This compound has a cubic crystal structure which is joined along the (111) plane with the parent trigonal structure; for this reason, the elementary block of the defective transition layer is identified as Eu₇Sn₁₂As₁₄. The latter one contains an odd number of Eu atoms (7) and therefore has a non-zero magnetic moment. We also performed precise magnetization measurements in weak external field ($<0.05$T) and revealed the FM-type hysteresis when the external field is applied in the easy $ab$ plane. The hysteresis disappears as temperature raises above 24 K, close to the Neel temperature $T_{N}$ of the host lattice, demonstrating a close relationship between the FM- and AFM-ordering in the crystal. This FM-type hysteresis explains the magnetization nonlinearity that is often observed in experiments in weak fields.

Furthermore, we performed DFT calculations of the band structure and magnetization of the defect layer. Their results confirmed that the planar defect possesses a ferromagnetic moment equal to one Eu atom moment, $6.77\mu_{B}$, per f.u. of the defect layer (which contains 7 Eu atoms). Thus, the crystal lattice of the layered A-type antiferromagnet EuSn₂As₂ comprises a sample-dependent amount of nanodefects, which have a nonzero magnetic moment and become ferromagnetically ordered at low temperatures $T<T_{N}$, in the AFM state of the host crystal.

The existance of the in-plane polarized nano-ferromagnets explains the above mentioned features in the AFM state of the host lattice, and hence solves the long-standing puzzle of the FM-like behavior of the layered vdW crystals in the AFM state. Thus, our results unveil the origin of such puzzling features as magnetization nonlinearity, susceptibility divergence with cooling below $T_{N}$, and splitting of the ESR resonance. We show that all these features originate from a weak ferromagnetic order in planar nano-defects randomly distributed in the bulk crystal. As a consequence, real layered EuSn₂As₂ crystal may be viewed as a natural metamaterial with FM nanomagnets imbedded into the AFM matrix. It is worth noting, the emergence of ferromagnetism in microscopic areas of semiconductor and its coexistence with the host AFM lattice was theoretically considered in 1968 by Eduard Nagaev [18]

This paper is organized as follows: In Section II we describe crystal lattice, samples, their synthesis, methods of magnetic and microstructural measurements. In section III we present our results of AC and DC magnetic measurements which manifest ferromagnetic-type features. In Section IV we present and analyse the main experimental data of the transmission electron microscopy where we revealed nano-defects and identified the chemical formula of the composition and their local lattice structure. In section V we show the results of the numerical DFT calculations band structure for the defect area. Finally, we provide a brief summary and discussion of the results in section VI and VII.

II Samples and Methods

Рис. 1: (a,b) Crystal lattice and magnetic structure of EuSn₂As₂ in the two projections. The crystal structure of EuSn₂As₂ is rhombohedral with the space group $R\bar{3}\,m$ [11]. The Eu spin sub-lattice is of A-type antiferromagnetic state with the $ab$ easy magnetization plane (adapted from Ref. [12]). Black arrows show Eu atoms magnetization directon. (c) Bulk sample view.

II.1 Synthesis of EuSn₂As₂ crystals and samples characterization

The high-purity materials used for growing EuSn₂As₂ single crystals were pieces of Eu (99.95%, LANHIT), Sn (99.99%, LANHIT) and As (99.9999%, LANHIT). The SnAs precursor, synthesized beforehand, was thoroughly mixed with Eu pieces in the required stoichiometric ratio:

$$\textrm{EuSn}_{2}\textrm{As}_{2}\qquad\leftarrow\qquad\textrm{Eu +2SnAs + flux (2SnAs)}$$

The prepared mixture pressured into a pellet was loaded into an alumina crucible, placed in a quartz ampoule which was sealed in Ar atmosphere under excess pressure of 0.2 atm. The sample was heated in a furnace for 9 hours up to 850C^∘, then held at this temperature for 24 hours, and cooled down at a rate of 7C^∘/h down to 500C^∘, and then held for 24 hours. The furnace was then turned off and the ampule, together with the furnace, was cooled in air. The synthesized aggregate was separated by mechanical cleaving, and crystals with dimensions about $2\times 1\times 0.2$ mm were selected for the measurements (Fig. 1c).

A small single crystal of EuSn₂As₂ with a mirror surface in the $ab$ plane was selected as an initial sample for structural studies (Fig. 1a in [19]). Lattice structure of the grown bulk crystals was characterized using an X-ray diffractometer (X-PertPro-MRD). The X-ray diffraction (XRD) measurements didn’t reval any structural defects (Fig. 2 from [19]) except for minor (within $7^{\circ}$) random misorientation (twisting) of crystal layers in the $ab$-plane (see SM to Ref. [20]). Interestingly, the layers are twisted in bunches of up to 6 pieces. XRD measurements of the grown crystals confirmed previously reported lattice parameters $a=b\approx 4.207$Å, $c=26.463$Å  and the elementary cell volume $v_{c}=405.63$ų. The EDX analysis confirmed the stoichiometry of the EuSn₂As₂ single crystal.

II.2 Methods and techniques of the crystal nanostructural investigation

Crystal structure was studied in a transmission/scanning electron microscope (TEM/STEM) Titan Temis Z (Thermo Fisher Scientific, USA) at an accelerating voltage of 200 kV. The microscope equipped with a probe spherical aberration corrector (the spatial resolution better than 0.5Å), high-angle annular dark-field (HAADF) detector (Fischione, USA), electron energy loss spectrometer (EELS) (GIF, Gatan, USA) and energy dispersive X-ray spectrometer (EDXS) (EDAX, USA).

Samples (lamellas) for TEM/STEM investigation were prepared by lift-out focused ion beam (FIB) technique in the dual beam scanning electron-ion microscope Helios Nanolab 660i (Thermo Fisher Scientific, USA) equipped with Ga⁺ focused ion beam source and a micro-manipulator (Omniprobe). The lamellas had lateral dimensions of $\sim 15\times 5\mu$m² (see Fig. 1b of [19]) in the plane containing the $c$-axis and thickness of less than $\approx 15$ nm.

The high resolution (HR) HAADF STEM image simulations were performed with Dr. Probe software [21] for the number of various lamella thicknesses. Digital Micrograph (Gatan, USA), TIA (FEI, USA) software was used for image processing.

II.3 Band structure computation

The electronic structure of EuSn₂As₂ and Eu₇Sn₁₂As₁₄ was calculated in the framework of DFT [22] using the generalized gradient approximation DFT/GGA implemented in the WIEN2k software package [23] (full-potential linearized augmented plane wave (FP-LAPW) method). The generalized gradient approximation (GGA) in the form of the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional [24] was employed, and the spin-orbit interaction was also included. The local Coulomb interaction on the Eu-4f state was taken into account in the framework of DFT+U [25] with values $U=6.8$ eV and $J=0.7$ eV. The correction for the double counting was taken in the fully localized limit form (FLL) [26].

III AC-magnetic susceptibility and DC-magnetization measurements

Temperature dependence of the AC-magnetic susceptibility and magnetic hysteresis loops were measured using MPMS7 SQUID magnetometer in the field orientation $H\|ab$ plane and in the range 0 to $0.2$ T. The antiferromagnetic ordering was observed at temperature $T\approx 24$ K (Fig. 2a), typical for EuSn₂As₂ compound at zero applied magnetic field. In the paramagnetic state, as temperature decreses to $T_{N}$, the AC magnetic susceptibility grows in the conventional manner manifesting the dominating FM-type interaction between Eu spins [10].

For the ideal easy-plane antiferromagnet EuSn₂As₂, within the molecular field theory, the out of plane susceptibility component $\chi_{c}$ is expected to remain constant below $T_{N}$ down $T=0$, and the in-plane component $\chi_{ab}$ - to decrease by a factor of 2 [10]. However, in experiments the $\chi_{ab}$ susceptibility component (in the easy-plane) often shows again a Curie-like upturn below $T_{N}$, as we mentioned above. This sample-dependent growth of the AC susceptibility with cooling in the AFM state was observed in Refs. [15, 6, 10], and in many other works; it was conjectured to be due to anysotropic magnetic impurities [10], with no proper experimental and theoretical verification.

Рис. 2: Temperature dependence of the AC-magnetic susceptibility, and of its inverse value (inset) for EuSn₂As₂ single crystal. Measurements were done with DC field $H=0$ and 0.2 T, applied in the easy $ab$ plane.

As an exaggerated illustration, we show in Fig. 2a the data for the sample where this upturn is even much larger than the conventional peak at $T_{N}$. The upturn gets weaker in a field of $0.01$ T, and is completely suppressed at $0.1-0.2$ T. It is worth noting, such fields are much smaller than the field of complete Eu-spin polarization in EuSn₂As₂ ($\approx 5$ T) [10, 12, 20]. The growth of $\chi$ at $T<T_{N}$ (Fig. 1b) manifests an apparent FM-type transition with $T_{c}\approx 18-20$ K.

DC magnetization curves shown in Fig. 3a, at first sight are typical for the easy-plane AFM crystal [27]. They are fully consistent with our previous measurements on similar samples [12, 20]; similar data were also reported in Refs. [11, 10, 7, 15]. Magnetization saturates in fields above $H_{s}$ due to the full spin polarization; $H_{s}\approx 4.7$ T, when $H\|c$, and $H_{s}\approx 3.4$T when $H$ lies in the easy magnetization $ab$-plane. For $H\|c$ the magnetization curve is precisely linear, however when field is applied in the $ab$ plane, $M(H)$ exhibits a sample-dependent weak nonlinearity in low fields less than $\approx 0.03\,$T. For the exaggerated illustration we show in Fig. 3a again the non-linear $M(H\|ab)$ dependence taken with the same sample, as in Fig. 2a. Similar nonlinearity of $M(H\|ab)$ in low fields may be noticed also in earlier published data of Refs. [10, 6, 15, 7, 20, 12].

Рис. 3: (a) DC-magnetization $M(H)$ for EuSn₂As₂ crystal at $T=2$K for two field orientations. (b) Magnified low-field interval of the $M(H)$ curves for the 2mg-piece cutout from the same bulk crystal measured at eight temperatures for $H\|ab$ orientation. Upper left inset: $M(H)$ dependence at $T=5K$ and the definitions of the extrapolated to $H=0$ saturation magnetization $\Delta M(H=0)$ and remanence magnetization $M_{\rm rem}$. Lower right inset: temperature dependencies of $\Delta M(H=0)$ and $M_{\rm rem}(H=0)$. Vertical arrow points at $T_{N}$.

In order to explore the unforeseen $M(H)$ nonlinearity, we have measured magnetization in more detail using MPMS-7 SQUID magnetometer. Figure 3b presents the magnified ($\times 100$) low-field range of the DC magnetization $M(H)$ curves. In low fields, from $-0.03$ to $+0.03$ T, the in-plane magnetization $M(H_{ab})$ is non-linear and displays a hysteresis of a ferromagnetic type. The $M(H)$ curve in Fig. 3b is a superposition of the typical ferromagnetic magnetization curve on top of the host lattice AFM linear magnetization (whose slope is temperature independent). Obviously, namely this hysteresis is the origin of the low-field nonlinearity of $M(H)$ that may be seen in Fig. 3a for $H\|ab$. The magnetization hysteresis disappears at $T\approx 24-25$ K according to the temperature dependencies of the width and height of the hysteresis loops (Fig. 3b). The lower right inset in Fig. 3 shows $\Delta M|_{H=0}(T)$ and $M_{\rm rem}(T)$; the coercitivity decays similarly to the latter one.

IV Transmission electron microscopy investigations

Bright field (BF) TEM image of EuSn₂As₂ single crystal (see Fig. 4a) revealed the presence of planar defects (marked with arrow #1) which are the focus of our study. Selected area electron diffraction (SAED) pattern (upper left corner inset of Fig. 4a) indicates that the specimen was observed along the $[\bar{5}410]$ zone axes. Here and below the structure is indexed with respect to hexagonal axes (see Fig. 1b). High resolution (HR) HAADF STEM image (Fig. 4b) and SAED pattern with streaks parallel to $c^{*}$-axis unambiguously demonstrate that the habit plane of the defects is parallel to the {0001} crystal planes of EuSn₂As₂.

The pristine EuSn₂As₂ unit cell (highlighted in Fig. 4b with a yellow frame) exhibits three blocks, in accordance with the lattice structure shown in Fig. 1a. Each block in HR HAADF STEM images demonstrates the chains of spots (Fig. 4b): (i) the brightest chain corresponds to Eu atoms columns, (ii) less intense are the double chains of columns of Sn atoms, and (iii) chains of columns of As atoms are nearly visible in the images but appear in the intensity map (Fig. 4c). From here on, the atomic chains are the rows of atoms perpendicular to the electron beam, and atomic columns are those parallel to it. Recently was established that the intensity of an atomic column image is proportional to the atomic number $Z^{\gamma}$ ($\gamma=1.6-2$) and depends nearly linear on the number of atoms in the column [28, 29].

In addition to the regular structure of the atomic layers (e.g., framed in yellow in Fig. 4b), one can see the defect layers (an example is framed in green in Fig. 4b; see also Fig. 3 in [19]). The contrast in the defect area differs strongly: there are three chains of brighter spots with slightly higher intensity in the central row that is also evident from the intensity maps (Fig. 4c). The EELS analysis of the central chain demonstrates the presence of Eu (Fig. 4c). This is confirmed by the results of the EDXS: the presence of Eu atoms chain is unambiguously revealed by the elemental mapping (Fig. 5a) together with line scan across the crystal layers (Fig. 5b).

Analyzing the data for 10 samples, we found that on average, the distance between individual planar defects along the $c$-axes ranges from 5 to $100\,\mu$m, whereas the length of the defect is several hundreds of microns. In BF TEM images there are also dislocations visible in the planar defects termination areas (see Fig. 3 in [19]).

The EDXS data (Fig. 5b) demonstrates that the intensity of Eu peak in the middle of the planar defect is significantly lower than that of two Eu peaks obtained from the defect-free EuSn₂As₂ areas. The Sn peaks in the defect area are noticeably lower, than those in the defect free areas. Close inspection of the images indicated that the crystal lattice parameter of the planar defect along the $c$ - axis is $c_{\rm def}=0.8$ nm, in contrast with the Eu-Eu distance $c/2\approx 1.32$ nm for the defect-free lattice [10, 20]. The part of EELS spectrum for the Eu N_4.5-edge demonstrates that the oxidation state of Eu has conventional value of $2^{+}$ [22]. Thus, if we consider the fact that half of the Sn-atoms are deficient in the defect, the local compound in the defect area takes the following chemical form: Eu²⁺Sn⁴⁺As${}^{3-}_{2}$ (cf. the chemical formula for the regular structure is Eu²⁺Sn${}^{2+}_{2}$As${}^{3-}_{2}$).

The ternary phase diagram of the Eu-Sn-As system (Fig. 4h) in a relevant temperature range was carefully studied and, using the stable crystalline phase detection scheme [30], EuSnAs₂ was identified as the only stable compound that meets the chemical criteria. Based on the observed geometric parameters of the defect, the ternary phase diagram, and taking into account our DFT calculations (see section V), we propose the crystal phase EuSnAs₂ (Fig. 4f) as a single layer defect composition. Noteworthy, the EuSnAs₂ phase is adjacent to EuSn₂As₂ on the ternary phase diagram.

Рис. 4: (a) BF TEM image of EuSn₂As₂ single crystal with planar defects (one is marked with the white arrow #1). Inset: SAED obtained in $[\bar{5}410]$ zone axis. (b) FFT filtered HR HAADF STEM image of the crystal lattice. Green balls designate Eu atoms, red balls - Sn, and violet - As. The EuSn₂As₂ unit cells is marked with yellow frame, blue arrow ‘‘1’’ marks the EDXS analysis line and blue rectangle ‘‘2’’ - of the EELS analysis; the simulated image is in red frame with defect area in green frame; (c) the intensity maps obtained from HR HAADF STEM experimental image of defect area and (d) intensity map - from simulated image; (e) EELS spectra obtained from the area marked with blue rectangle 2 on panel (b); (f) DFT simulated crystal structure model Eu₇Sn₁₂As₁₄ of the transition defect block, including the regular layers (A, B) and defect layer itself (C); (g) a part of the HR HAADF STEM image from panel (b) showing correspondence with the simulated crystal structure; (h) triangle phase diagram (convex hull) of the Eu-Sn-As system.

Рис. 5: (a) EDXS Chemi STEM elemental maps in a region including planar defect; (b) EDXS Chemi STEM elemental line profile along blue arrow 1 on Fig. 4b.

The planar defect lattice structure was constructed by including single layer of the EuSnAs₂ compound having face-centered cubic symmetry (space group $Fm\bar{3}m$). To match the original trigonal structure (Space group $P3m$), a primitive unit cell of $Fm\bar{3}m$ structure with the basis $a=(0,0.5,0.5)$, $b=(0.5,0,0.5)$, $c=(0.5,0.5,0)$ was rotated and transformed by the matrix $\left((2,-1,-1),(-1,2,-1),(2,2,2)\right)$. As we found, the 7 layers of the resulting defect structure match the EuSn₂As₂ cell. The final supercell with the planar defect has the exact formula Eu₇Sn₁₂As₁₄ with 7 Eu atoms per unit cell, whereas the pristine 3-layer host lattice structure with AFM order may be considered as Eu₆Sn₁₂As₁₂. The crystal structure model is presented in Figures 4f,g, where the defect-free EuSn₂As₂ host lattice (block A) transforms to the EuSnAs₂ defect (block C).

In order to verify our construction, we attempted to simulate the HR HAADF STEM image of the supercell containing planar defect with a number of different specimen thickness. However, those simulations do not demonstrate good fit with experimental images in the relevant range of thickness between 10 nm and 100 nm. Specifically, two features in the simulations do not match the data: (1) The chain of Eu atoms in the defect area exhibits too high intensity in the simulated images. (2) The contrast of Sn and As chains is also different from that in the defect-free region. In order to overcome this discrepancy we assumed that in most cases the defect structure - EuSnAs₂ overlaps with EuSn₂As₂ crystal forming a ‘‘two-layered’’ heterostructure in the direction parallel to the electron beam (see Fig. 6).

Here, for brevity, we present only the details of the structures that gave acceptable agreement with the experimental HR HAADF STEM image. The best fit was obtained for the thickness (along the beam direction) of the EuSnAs₂ defect layer of 5 nm and the EuSn₂As₂ layer of 13 nm.

The simulated image is outlined in red in Fig. 4b and the intensity map obtained from this image is shown in Fig. 4d. Except for the acceptable peak intensities of Eu and Sn, additional weak peaks from the overlapping As and Sn chains of the defect and the ideal crystal coincide with the experimental image (compare Fig. 4c and Fig. 4d).

Рис. 6: Cross section of the schematic model of a specimen with the EuSnAs₂ defect layer and the regular EuSn₂As₂ layer.

V DFT calculation of the defect band structure and magnetic properties

In order to understand the nature and characteristics of the EuSnAs₂ planar defect and its interaction with the regular crystal lattice, we performed DFT+U calculations of Eu₇Sn₁₂As₁₄ (see computational detail in Section 2). As we have shown above (Fig. 4f), the supercell of the planar defect includes an odd number (7) of Eu atoms. Therefore, the presence of a planar defect in the crystal structure leads to the appearance of an uncompensated magnetic moment per unit cell. As a results, the Eu-4f density of states (DOS) of Eu atoms from regular crystal lattice (atoms 1, 3 - 7 enumerated in Fig. 4f) have maximum at slightly different energy $-1.5,-1.6,-1.7$ eV (Fig. 7b). It is similar for up and down spin component. For the Eu atoms in the center of planar defect (part C on Fig. 4f) the peak of DOS is located at $-1.9$ eV (Fig. 7b). For the regular crystal structure EuSn₂As₂ with AFM configuration, the total DOSes for up and down spin component coincide (Fig. 7a). The peak of Eu-4f DOSes for different atoms is located at the same energy $-1.7$ eV. The Sn and As atoms in the planar defect (atoms inside part C on Fig. 4f) have a small magnetic moment. Also, the contribution to DOS from these Sn and As atoms in the defect layer shifts down in energy to $-6$ eV (Fig. 7b). In contrast, DOS of Sn (regular) and As (regular) atoms from the regular crystal lattice have the lower boundary at $-5$ eV.

Рис. 7: GGA+U total and partial DoS for EuSn₂As₂ (a), and for Eu₇Sn₁₂As₁₄ (b). For EuSn₂As₂, the density of states with spin up and spin down coincide. In case of Eu₇Sn₁₂As₁₄, DoS also coincide for atoms located away from the planar defect: Sn atoms from 3 to 12 and for As atoms from 5 to 14. The Fermi level corresponds to the zero energy.

We now show how the presence of a defect in the crystal structure affects the band structure. Comparison of the band structure of Eu₇Sn₁₂As₁₄ (red lines) with that of the bulk EuSn₂As₂ (black lines) is presented on Fig. 8a. The Eu₇Sn₁₂As₁₄ bands cross the Fermi level in the vicinity of the M point and along M-K, K-$\Gamma$ directions of the Brillouin zone. In case of EuSn₂As₂, the bands cross the Fermi level only near the $\Gamma$ point. These new bands in Eu₇Sn₁₂As₁₄ are mainly associated with the As-4p states of atoms, and are located in the planar defect region (part C in Fig. 4d). The Eu₇Sn₁₂As₁₄ extra bands should make little or no contribution in ARPES measurements due to the small volume fraction of the defects ($\sim 3\%$) in the investigated single crystals. However, upon cooling the uncompensated Eu-magnetic moments are expected to experience ferromagnetic ordering, which may be revealed in magnetization and magnetic resonance measurements.

Figure 8b shows the Eu₇Sn₁₂As₁₄ bands for each spin component. Here, the bands with spin-orbit interaction included are depicted by red lines, and without SO - by blue lines. The splitting of bands with opposite spin direction near the Fermi level with spin-orbit interaction included are depicted by red lines, and without SO - by blue lines. One can see that spin-orbit interaction only slightly shifts the bands and almost doesn’t split the bands for Eu₇Sn₁₂As₁₄ (see Fig. 8c).

Рис. 8: Band structure (a) for the lattice with the planar defect of Eu₇Sn₁₂As₁₄ (red lines) compared to the bulk defect-free structure of EuSn₂As₂ (black lines) obtained in GGA+U. (b) GGA+U band structure for Eu₇Sn₁₂As₁₄ resolved by spin. (c)The effect of spin-orbit interaction accounting to the band structure of Eu₇Sn₁₂As₁₄.

As a result of the DFT+U calculations, we obtained the magnetic moments on each of 7 Eu atoms (in Bohr magnetons) in the unit cell of the model crystal structure Eu₇Sn₁₂As₁₄ as follows: 6.73, 6.70, -6.73, 6.81, -6.81, 6.81, -6.81 (the sequence is indicated from bottom to top along the z-axis in Fig. 4f. The net DFT+U total magnetic moment per cell is $6.77\mu_{B}$. To estimate the total magnetic moment of real sample, the DFT+U calculated magnetic moment is multiplied by volume fraction of the defects in the bulk (3%). Thus, the average ferromagnetic moment of the sample per unit volume is about $0.20\mu_{B}$/f.u.

VI Discussion

Our major findings are as follows:

1. Defect formula and unit cell. From the high resolution TEM investigations we revealed the presence of planar defects in a high quality EuSn₂As₂ crystals. From the DFT calculations we have identified the structure and composition of the planar defect. It is found to incorporate an extra and misplaced row of Eu atoms, and has the local composition EuSnAs₂. This compound with cubic crystal structure is stacking with trigonal structure of the parent EuSn₂As₂ by [111] plane. The extended elementary cell (supercell) of the defective transition layer contains 33 atoms and have a total formula Eu₇Sn₁₂As₁₄. Since the extended unit cell contains an odd number of Eu atoms, the defect has a non-zero magnetic moment.

2. DFT calculations of the defect magnetization and
   band structure. Within DFT+U we obtained the magnetic moments on each of 7 Eu atom (in Bohr magnetons) in the supercell of the model crystal structure Eu₇Sn₁₂As₁₄. Thus, the presence of a planar defect in the crystal structure leads to the uncompensated magnetic moment per unit cell. The resulting total magnetic moment per supercell (containing 7 Eu atoms) is $6.77\mu_{B}$.

3. DC magnetization features and planar defects.
   As we mentioned above, in several publications, one can notice in low-fields a weak nonlinearity of the $M(H)$ dependencies when magnetic field lies in the $ab$ plane. The example is also shown in Fig. 3b. It would be tempting to link the hysteresis to the same weak ferromagnetic magnetization of the defects. Indeed, the fact that the non-linearity and hysteresis are observed only when $\mathbf{H}$ lies in the $(ab)$- plane is natural for the easy-plane AFM ordering.

   In the DC magnetization of a crystal, the ferromagnetic contribution is summed over all defects and is determined by the average FM magnetization per volume of the crystal. In this case, we can expect that the saturation value of DC magnetization in field $H\|ab$ will be $\sim 7\times(3\%)^{-1}\sim 230$ times less than the saturation magnetization value of the AFM crystal. This estimate roughly corresponds to the 300:1 ratio of the measured AFM- and FM- saturation magnetizations shown in the figures 3a,b.

   The magnetization in Fig. 3b tends to saturate in very low fields of about 300-400 Oe which are much less than $H_{s}\approx 5$ T characteristic of the complete spin alignment in the AFM state, much less than the effective magnetization in the AFM state $M_{\rm eff}=1.3$ T [12], and even less than the magnetization of the FM-planar defects $\mathcal{M}_{FM}\approx 0.135$ T, determined from the ferromagnetic resonance measurements [17]. The latter parameter, probed by ESR measurements, we believe, corresponds to the average FM-magnetization of the defect per its volume.

   The hysteresis of the $M(H)$ curves in Fig. 3b may be casued by a weak anisotropy, i.e. a nonzero constant $K_{u}^{(ab)}$, as mentioned above. Indeed, from the symmetry and energy minimum arguments, the ferromagnetic moments of the Eu atoms in the defects should be directed perpendicular to the AFM magnetization vector and lie in the same $ab$-plane. Also clear, that in zero external field the FM-moments $\mathcal{M}_{\rm FM}$ should be directed equally likely in opposite directions in various unit cells and various defects. In other words, the hysteresis width apparently, is a consequence of a finite energy required to reorient half of the moments along the field direction. Recently, a weak anisotropy in the $ab$ plane of ESA was observed below $T_{N}$ from measurements of the second harmonic generation [37].

   In EuSn₂As₂ crystals, the anisotropy in the easy $ab$-plane might be related with axial alignment of the planar defects by other imperfections (e.g., by a minor intrinsic axial bending of the crystal).

   The low-field $M(H)$ hysteresis and nonlinearity (Figs. 3a,b) disappear at a temperature of 25 K (see Fig. 3c,d), that almost coincides with the Neel temperature $T_{N}=24$K of the AFM ordering in the bulk. The latter coincidence points at a link of the hysteresis with the AFM ordering in the bulk on average, rather than with local FM-ordering in the defect areas (which seems to set at $T_{c}=18-20$ K, as follows from the AC-susceptibility (Fig. 2).

4. AC magnetic susceptibility. As we mentioned in section I and showed in Fig. 2, the low-frequency AC susceptibility $\chi(T)$ measured for EuSn₂As₂ crystals in low fields often exhibits an upturn, below $T_{N}$. This upturn in Fig. 2 starts somewhat lower than the Neel temperature $T_{N}=24-25$ K for the bulk crystal. In some papers, this divergence is not seen simply because it is washed out by applied field of $H>0.05$ T which polarizes the FM-moments.

   The $\chi(T)$ divergence points at a potential ferromagnetic transition developing in minority fractions of the bulk crystal that is already ordered antiferromagnetically. We consider this divergence as a direct manifestation of ferromagnetic ordering in the minority fraction of the crystal (the planar defects) at $T_{c}=18-20$ K. This $T_{c}$ value is typical for the known compound EuSnAs₂. Whithin our approach, the observation of the weak FM-type hysteresis in low fields $<0.01$ T (see the preceding item) proves the presence of the FM-defects and explains both, the $M(H)$ nonlinearity and the $\chi(T)$ divergence.

   Alternatively, it is very unlikely the FM-type behavior to appear from magnetic impurities (as was presumed widely), since the compounds are commonly synthesized from high purity raw materials. Rather, the source of FM-signal in pure compounds most likely originates from structural defects. In the studied EuSn₂As₂ compound the defects are planar, whereas in other materials the structural defects may be different. Recently, in MnBi₂Se₄, magnetic moments have been detected which are induced by misplaced Mn atoms [39].

5. Manifestation of magnetic defects in other
   physical properties of the vdW crystals. The FM-defects are expected to pin the magnons at low frequencies. However, experimental verification of the presence of magnon-gap is challenging: testing the potential magnon gap and the hysteretic spin-canting by electron spin resonance (ESR) measurements [12] in such low fields ($H<0.03$T) would require lowering microwave frequency by a factor of 10, that would drastically decrease the Zeeman energy and impede ESR observation.

   Nevertheless, the ferromagnetic planar defects are rather likely to be responsible for the splitting of the ESR line observed in Refs. [12, 17]. This possibility may be experimentally verified.

6. Potential detecting the defects by other techniques.
   The best technique to visualize the ferromagnetic planar defects is the scanning SQUID or NV-centers scanning microscope; it would enable to detect local ferromagnetic moments of the ‘‘odd’’ Eu atoms and to visualize the spatial magnetic structure.

   In view of the small concentration of planar defects in the sample, the presence of additional bands and the energy shift of the density of states for some bands is unlikely to be visible in PES and ARPES on top of the background of the intensity from other bands and the density of states of atoms from the regular ordered structure.

   Regarding magnetotransport measurements, the in-plane charge transport is insensitive to the presence of low density planar defects whose thickness is less than the mean free path; in experiments [20], the magnetoresistance was found to be isotropic in the $ab$-plane.

7. Potential applications of the metamaterial.
   The EuSn₂As₂ crystal with embedded planar defects may be considered as a metamaterial. By applying rather small magnetic field ($\sim 100$ Gs), the subsystem of defects can be switched from the AFM to FM state, without affecting the large AFM magnetization of the host lattice. Due to this property, EuSn₂As₂ and similar vdW layered AFM semimetals might find an application in spintronics.

VII Conclusion

To conclude, in this work we investigated high purity EuSn₂As₂ single crystals which experience antiferromagnetic ordering at $T<T_{N}$. This compound exhibits several unusual magnetic properties which remained puzzling by now. These peculiarities include magnetic susceptibility divergence at $T\rightarrow 0$, in-plane magnetization nonlinearity in weak fields, and splitting the ESR line [17]. In search of the origin of these features we performed precise magnetization measurements and found a weak ferromagnetic type hysteresis in low fields. The hysteresis is evidently the cause of the magnetization nonlinearity. It manifests the presence in the high purity stoichiometric compound of native ferrmagnetic inclusions, though does not explain their origin.

To determine the source of ferromagnetism we applied a combination of EDX, HRTEM, and EELS techniques, which revealed the existence of nm-size (along the $c$-axis) and hundreds of $\mu$m long (in a perpendicular direction) planar defects; the defects aligned perpendicular to the $c$ axis are randomly distributed in the bulk. Analyzing the HRTEM images and comparing them with simulated defect structure we determined that the extended defects have about 15 nm thickness. Thus, the planar defects break the rotational symmetry of the basal $ab$ plane of the rhombohedral lattice.

Using the TEM investigations, structural analysis, and DFT calculations we identified the chemical formula of the local phase in the planar defect area to be EuSnAs₂. Incorporating the cubic defect lattice structure into the rhombohedfral defect-free bulk lattice requires the defect unit cell to comprise 7 Eu atomes with resulting composition of the transition defect supercell Eu₇Sn${}_{1}2$As₁₄. Due to the odd number of Eu atoms, the defect possesses the intrinsic magnetic moment of about $0.96\mu_{B}$ per extended unit cell.

The non-zero magnetic moment results from locally enhanced exchange interaction between Eu atoms. From general arguments, the moments are expected to lie in the easy magnetization $ab$-plane of the host crystal and are oriented perpendicular to the AFM vector $\mathbf{L}$. Upon cooling below $T_{c}\approx 20$ K, the magnetic moments of the defects experience ferromagnetic-type ordering which explains the observed weak ferromagnetic moment of the AFM crystal. In order to complement and to substantiate the structural finding we performed extensive DFT calculations of the defect band structure, energy levels, density of states and magnetization. Their results, in particular, confirm the weak in-plane ferromagnetic moment of the defect, $\approx 0.7\mu_{B}/$f.u.

This theoretical conclusion was supported by our high-precision magnetization measurements in weak magnetic fields, which revealed a ferromagnetic-type hysteresis. We suggested, the hysteresis might originate from an in-plane magnetic anisotropy caused by extended defects, i.e. from in-plane pinning of the magnetization by the anisotropic magnetic defects.

Thus, the extended nano-defects spontaneously formed in the bulk antiferromagnetic crystal are responsible for the unusual magnetic and microwave resonance properties of the EuSn₂As₂ single crystals.

Our findings suggest the existence of a native metamaterial consisting of the EuSn₂As₂ bulk AFM-ordered host matrix and ferromagnetic Eu₇Sn₁₂As₁₄ nano-inclusions. Such a metamaterial might find potential practical applications in the field of spintronics.

VIII Contributions

A.Yu.L., A.V.L., A.V.O., and V.I.B. performed the TEM measurements, processed their results and analyzed the defect lattice structure. N.S.P. performed the DFT calculations. K.S.P. and V.A.V. grew and characterized the crystals. A.V.S. and A.Yu.L. performed magnetic measurements. V.M.P., A.Yu.L., A.V.S., V.I.B. and A.V.L. analyzed the data and wrote the paper. V.M.P. conceived this project. All the authors discussed the results and offered useful inputs.

IX Declaration of Competing Interest

The authors declare no conflict of interest.

X Data availability

All the data are available from the corresponding author upon a reasonable request.