计算机存储器storage,存储元件和存储器 Storage components, and memory

老笨Siva

于 2021-07-26 12:27:54 发布

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文章标签：计算机存储器storage

本发明提供一种磁存储元件，包括磁存储层及磁化固定层，两者间夹有绝缘层。通过注入自旋极化电子改变磁存储层的磁化方向以记录信息。磁存储层中至少包含一层主要由CoFeTa组成，Ta含量范围为1原子百分比至20原子百分比。

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摘要：

The present invention provides a memory element including a memory layer that holds information based on a magnetization state of a magnetic substance, and a magnetization pinned layer that is provided for the memory layer with intermediary of an intermediate layer therebetween, the intermediate layer being composed of an insulator. Spin-polarized electrons are injected in a layer-stacking direction to thereby change a direction of magnetization of the memory layer, so that information is recorded in the memory layer. At least one ferromagnetic layer included in the memory layer is composed mainly of CoFeTa, and has Ta content in a range from 1 atomic percent (at %) to 20 at %.

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