MK60DN512ZVLL10 存储器分布

xing_chang

于 2011-11-04 13:43:26 发布

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分类专栏： Cortex-M4 文章标签：存储 flash arrays system

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本文深入解析MK60DN512ZVLL10微控制器中的ProgramFlash与SRAM存储单元，包括其容量、地址范围、特性及应用。

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Program Flash

MK60DN512ZVLL10 Program flash共512KB，地址范围：0x0000_0000--0x0007_FFFF,分为两个block，另外2 blocks of program flash consisting of 2 KB sectors

For the program flash only devices:
• Two program flash blocks are supported: program flash 1 and program flash 2.
The two blocks are contiguous in the system memory map.
• The program flash blocks support a swap feature in which the starting address of
the program flash blocks can be swapped.
• The FlexRAM is not available as EEPROM or traditional RAM. Its space is only
used for programming acceleration through the Program Section command.

SRAM

The on-chip SRAM is split into two equally-sized logical arrays, SRAM_L and
SRAM_U.

Valid address ranges for SRAM_L and SRAM_U are then defined as:
• SRAM_L = [0x2000_0000–(SRAM_size/2)] to 0x1FFF_FFFF
• SRAM_U = 0x2000_0000 to [0x2000_0000+(SRAM_size/2)-1]