„I met Dr. Holger Bartolf, after he started his industrial career at ABB Corporate Research in 2011. After a short period of time in a completely new research field, he was able to successfully propose original research projects and generated novel publications (e.g. trench and refill of 3micron wide and 60micron deep Super-Junction structures, which in my opinion is a very challenging processes in microfabrication). In less than 5 years, he acquired impressive amounts of third party funds, thereby gaining experience in project management. The three projects he initiated made remarkable progress and the numerous publications in peer-reviewed journals and key conferences received international recognition in the community. He impressed me by contributing processing parameters in the Nanoargovia project we had together (NanoSiCTrenchFet), which were tried in my lab and enabled an operational SiC-based trench-technology in Switzerland. Two Ph.D. students at the Paul Scherrer Institute and two postdoctoral students at the University of Basel are funded through the projects and benefit from his ideas. 'Due to Holger's remarkable scientific progess, both as ABB's internal PL of the next generation of power semiconductor devices as well as his publically initiated projects, I proposed Holger for an invited talk at the Swiss Nanoconvention 2015 which got accepted by the program committee. He gave an agile talk about the next generation of power semiconductors and how the publically funded projects he initiated are serving the ABB reserach activities. Holger possesses well developed project-coordination and project-leadership skills and effectively cross-links in interdisciplinary and multicultural environments. Furthermore he demonstrated his didactic qualities by publishing an original Springer book which describes Nanotechnology in a novel manner. Process technology on how to obtain about 10nm feature-sizes is elucidated including the historical context and physical principals of the various techniques and tools utilized in a modern cleanroom. “
Info
Ph.D. physicist with distinct analytical and technical skills. Authored a Springer…
Aktivitäten
-
At Bosch in Roseville we are building for the future! For the past two years we have been completely renovating our manufacturing facility to…
At Bosch in Roseville we are building for the future! For the past two years we have been completely renovating our manufacturing facility to…
Beliebt bei Holger Bartolf
-
It was an honor and a pleasure to participate as a guest speaker at PowerAmerica member Beneq's Semicon Europa event, with co-speakers Stefaan…
It was an honor and a pleasure to participate as a guest speaker at PowerAmerica member Beneq's Semicon Europa event, with co-speakers Stefaan…
Beliebt bei Holger Bartolf
Berufserfahrung
Ausbildung
Bescheinigungen und Zertifikate
-
-
Power Speech - Effective and Convincing Presentations
GAF Gesellschaft zur Ausbildung von Führungskräften AG
Ausgestellt:
Veröffentlichungen
-
Fluctuation Mechanisms in Superconductors - Nanowire Single-Photon Counters, Enabled by Effective Top-Down Manufacturing
Springer Monograph; 330 pages
Veröffentlichung anzeigen☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
Superconducting cryogenic single-photon detectors are explained including analytical models of the detection mechanism and the historical development of low-temperature superconductivity is debated by numerous (> 600) references and 79 vivid colorful pictures.
☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
The mathematical formalism (> 240 equations) to understand the superconducting BCS-condensate at the nanoscale is introduced…☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
Superconducting cryogenic single-photon detectors are explained including analytical models of the detection mechanism and the historical development of low-temperature superconductivity is debated by numerous (> 600) references and 79 vivid colorful pictures.
☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
The mathematical formalism (> 240 equations) to understand the superconducting BCS-condensate at the nanoscale is introduced including dissipative fluctuation mechanisms (BKT, LAMH, edge barrier for vortex entry as well as Cooper-pair fluctuations).
☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
A unique and novel approach on how to manufacture high-quality nanoscale devices by state-of-the-art process technology (~ 10nm features) is elucidated including the historical context and physical principals of the various techniques and tools utilized in a modern cleanroom.
☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
Patente
-
see all my patents on https://worldwide.espacenet.com
DE 2017 - today (SiC: switch)
Patent anzeigenPatents of Holger Bartolf with Robert Bosch
-
see all my patents on https://worldwide.espacenet.com
CH 2014 - today (SiC: rectifier & switch)
Patent anzeigenPatents from Holger Bartolf with Asea Brown Boveri:
Development of unique, reliable and globally competitive micro- and nanotechnology.
SiC MOSFET development: Key USPs: Internationally issued patents:
- EP3198631B1, JP6454447B2, CN108701617B, US10516022B2
- EP3384522B1, EP3384523B1, US10361082B2, US10553437B2
Kurse
-
Leadership Challenge Program
27 - 29, Nov, 2013
-
Practical Innovation
05 - 06, Jun, 2014
-
Project Essentials
18 - 19. Oct, 2011
Projekte
-
Industry Partner - Atolys
–
Organization, development, milestones and deliverables of the project "Atolys - From Theoretical Calculations and Experiments to Improved High-Performance Semiconductors" as well as the generated intellectual property. In the project, the researchers Prof. Stefan Goedecker (University of Basel), Prof. Thomas Jung (Paul Scherrer Institute), Dr. Joerg Lehmann (ABB Corporate Research, Theoretical Physics) and Dr. Holger Bartolf (ABB Corporate Research, Power Semiconductors) combine unique and…
Organization, development, milestones and deliverables of the project "Atolys - From Theoretical Calculations and Experiments to Improved High-Performance Semiconductors" as well as the generated intellectual property. In the project, the researchers Prof. Stefan Goedecker (University of Basel), Prof. Thomas Jung (Paul Scherrer Institute), Dr. Joerg Lehmann (ABB Corporate Research, Theoretical Physics) and Dr. Holger Bartolf (ABB Corporate Research, Power Semiconductors) combine unique and novel theoretical and experimental approaches to examine the interface between silicon carbide and silicon dioxide for MOS-controlled semiconductors (232kCHF funds, 2 years).
Andere Mitarbeiter:innenProjekt anzeigen -
Industry Partner - Trench-MOS Interface: NanoSiCTrenchFET
–
Organization, development, milestones and deliverables of the project "Physical Studies of SiC Nano-Trench-MOSFETs" as well as the generated intellectual property. Research teams around Prof. Ernst Meyer (University of Basel), Prof. Jens Gobrecht (PSI), Dr. Marc Schnieper (CSEM), Dr. Renato Minamisawa and Dr. Holger Bartolf (ABB Corporate Research, Power Semiconductors) investigate novel trench-designs of SiC-based power MOSFETs (345kCHF funds, 2 years).
Andere Mitarbeiter:innenProjekt anzeigen -
Industry Partner - Dopant Imaging of Si and SiC Structures (WBG-NPA)
–
Organization, development, milestones and deliverables of the project "WBG-NPA" as well as the generated intellectual property. Research teams around Prof. Ernst Meyer (University of Basel), Prof. Thomas Jung (PSI) and Dr. Holger Bartolf (ABB Corporate Research) investigate 2D dopant profiles in wide-band gap semiconductors by atomic force microscopy (285kCHF funds, 2 years).
Andere Mitarbeiter:innenProjekt anzeigen -
Fluctuation-Mechanisms in NbN-Based Superconducting Single-Photon Detectors
–
Projekt anzeigenForschungskredit Candoc; 97 Grants out of 282 Proposals
Principle investigator of project investigating fluctuation mechanisms in superconductors.
90kCHF / 11 months
• H. Bartolf et al. explained the dark-count mechanism in SNSPDs:
• http://dx.doi.org/10.1103/PhysRevB.81.024502 (cited around 70x (January 2017))
Auszeichnungen/Preise
-
Ph.D. Thesis of Mr. H. Rossmann
Faculty of Natural Science / University of Basel
Member of the Examinatorial Committee of Mr. H. R. Rossmann
• Defense Date: 29th of June 2016 / Dept. Physik, neuer Hörsaal
• Invited as the industrial expert on power semiconductor devices.
Promotionsfach: Experimentalphysik
• Thesis: http://edoc.unibas.ch/diss/DissB_11785 -
Member of the Program Committee
Swiss NanoConvention
Member of the Program Committee of the Swiss NanoConvention:
http://swissnanoconvention.ch/2016/organisation/ -
Springer Monograph
Springer
http://www.springer.com/us/book/9783658122454
-
Invited Talk at the Swiss Nanoconvention
Swiss NanoConvention
Development of High-Power Semiconductors
http://swissnanoconvention.ch/2015/showspeaker.php?id=104 -
Atolys
Swiss Nanoscience Institute (SNI)
Industrial partner of research project about SiC-based MOS-interfaces.
232kCHF / 2 years -
Trench-MOS (NanoSiCTrenchFET)
Swiss Nanoscience Institute (SNI)
Industrial partner of research project about SiC-based trench-MOS cell-architectures.
345kCHF / 2 years -
Dopant Imaging (WBG-NPA)
Swiss Nanoscience Institute (SNI)
Industrial partner of research project about AFM-based imaging of dopants.
285kCHF / 2 years -
Fluctuation-Mechanisms in NbN-Based Superconducting Single-Photon Detectors
Forschungskredit Candoc; 97 Grants out of 282 Proposals
Principle investigator of project investigating fluctuation mechanisms in superconductors.
90kCHF / 11 months -
Ph.D. Program
University of Zürich
Fully funded Ph.D. program at the University of Zürich.
Sprachen
-
German
Muttersprache oder zweisprachig
-
English
Fließend
-
French
Gute Kenntnisse
Organisationen
-
Swiss Physical Society (SPS)
-
–Heute -
German Physical Society (DPG)
-
–Heute
Erhaltene Empfehlungen
4 Personen haben Holger Bartolf empfohlen
Jetzt anmelden und ansehenWeitere Aktivitäten von Holger Bartolf
-
⚗️ Atomic layer deposition keeps pushing deeper into high-volume manufacturing, and it’s interesting to see new tool concepts aimed specifically at…
⚗️ Atomic layer deposition keeps pushing deeper into high-volume manufacturing, and it’s interesting to see new tool concepts aimed specifically at…
Beliebt bei Holger Bartolf
-
We are excited to announce Beneq Transmute™ – a next-generation ALD platform for high-volume semiconductor manufacturing. Engineered for Wide…
We are excited to announce Beneq Transmute™ – a next-generation ALD platform for high-volume semiconductor manufacturing. Engineered for Wide…
Beliebt bei Holger Bartolf
-
We see that China’s strategic focus is precisely on the technologies that drive superior productivity in manufacturing. This has always been a core…
We see that China’s strategic focus is precisely on the technologies that drive superior productivity in manufacturing. This has always been a core…
Beliebt bei Holger Bartolf
-
https://lnkd.in/e4yrctTG Na da bin ich gespannt welchen Lieferanten VW hier nicht nennen möchte. 🧐
https://lnkd.in/e4yrctTG Na da bin ich gespannt welchen Lieferanten VW hier nicht nennen möchte. 🧐
Beliebt bei Holger Bartolf
-
Leistungsfähige Chips „Designed in Germany“: Dann performt deine Elektronik auch in Zukunft! Noch 4 Tage bis zur Auftaktveranstaltung der…
Leistungsfähige Chips „Designed in Germany“: Dann performt deine Elektronik auch in Zukunft! Noch 4 Tage bis zur Auftaktveranstaltung der…
Beliebt bei Holger Bartolf
-
The automotive landscape is shifting fast. 𝗪𝗵𝗼’𝘀 𝗮𝗱𝗮𝗽𝘁𝗶𝗻𝗴, and 𝘄𝗵𝗼’𝘀 𝗳𝗮𝗹𝗹𝗶𝗻𝗴 𝗯𝗲𝗵𝗶𝗻𝗱? 🌍 𝗚𝗲𝗿𝗺𝗮𝗻𝘆, 𝗝𝗮𝗽𝗮𝗻…
The automotive landscape is shifting fast. 𝗪𝗵𝗼’𝘀 𝗮𝗱𝗮𝗽𝘁𝗶𝗻𝗴, and 𝘄𝗵𝗼’𝘀 𝗳𝗮𝗹𝗹𝗶𝗻𝗴 𝗯𝗲𝗵𝗶𝗻𝗱? 🌍 𝗚𝗲𝗿𝗺𝗮𝗻𝘆, 𝗝𝗮𝗽𝗮𝗻…
Beliebt bei Holger Bartolf
-
As SiC MOS-gated FET technology improves in terms of better conductivity it is a natural consequence that the channel-resistance Rch starts to become…
As SiC MOS-gated FET technology improves in terms of better conductivity it is a natural consequence that the channel-resistance Rch starts to become…
Geteilt von Holger Bartolf
-
Will ALD shape the future of next-generation SiC and GaN devices? Request to attend our invite-only Beneq ALD for Power & RF Electronics Forum in…
Will ALD shape the future of next-generation SiC and GaN devices? Request to attend our invite-only Beneq ALD for Power & RF Electronics Forum in…
Beliebt bei Holger Bartolf
-
A look ahead at our upcoming ALD for Power Electronics Forum on November 19, 2025, alongside Semicon Europa. We are pleased to have foremost experts…
A look ahead at our upcoming ALD for Power Electronics Forum on November 19, 2025, alongside Semicon Europa. We are pleased to have foremost experts…
Beliebt bei Holger Bartolf
-
Insane Semiconductor Industry Facts 1. The most advanced fab costs more than 3 aircraft carriers- the newest TSMC 1.4nm Fab in Taichung, Taiwan…
Insane Semiconductor Industry Facts 1. The most advanced fab costs more than 3 aircraft carriers- the newest TSMC 1.4nm Fab in Taichung, Taiwan…
Beliebt bei Holger Bartolf
-
Happy to share my typical workday. Check it out! 😊 Thanks for the opportunity, Bosch 🙌
Happy to share my typical workday. Check it out! 😊 Thanks for the opportunity, Bosch 🙌
Beliebt bei Holger Bartolf
-
🚨 EV sales surge in 2025, but what is next now? Tesla and General Motors are crushing it in US EV sales, fueled by a rush to claim up to $7,500 in…
🚨 EV sales surge in 2025, but what is next now? Tesla and General Motors are crushing it in US EV sales, fueled by a rush to claim up to $7,500 in…
Beliebt bei Holger Bartolf