Holger Bartolf

Holger Bartolf

Region Stuttgart
806 Follower:innen 500+ Kontakte

Info

Ph.D. physicist with distinct analytical and technical skills. Authored a Springer…

Aktivitäten

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Berufserfahrung

  • Bosch Grafik

    Bosch

    Reutlingen Area, Germany

  • -

    Stuttgart Area, Germany

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    Zürich Area, Switzerland

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    Basel Area, Switzerland

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    Zürich Area, Switzerland

  • -

    Zürich Area, Switzerland

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    Berlin Area, Germany

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    Rottweil Area, Germany

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    Karlsruhe Area, Germany

  • -

    Karlsruhe Area, Germany

Ausbildung

Bescheinigungen und Zertifikate

Veröffentlichungen

  • Fluctuation Mechanisms in Superconductors - Nanowire Single-Photon Counters, Enabled by Effective Top-Down Manufacturing

    Springer Monograph; 330 pages

    ☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
    Superconducting cryogenic single-photon detectors are explained including analytical models of the detection mechanism and the historical development of low-temperature superconductivity is debated by numerous (> 600) references and 79 vivid colorful pictures.
    ☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
    The mathematical formalism (> 240 equations) to understand the superconducting BCS-condensate at the nanoscale is introduced…

    ☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
    Superconducting cryogenic single-photon detectors are explained including analytical models of the detection mechanism and the historical development of low-temperature superconductivity is debated by numerous (> 600) references and 79 vivid colorful pictures.
    ☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
    The mathematical formalism (> 240 equations) to understand the superconducting BCS-condensate at the nanoscale is introduced including dissipative fluctuation mechanisms (BKT, LAMH, edge barrier for vortex entry as well as Cooper-pair fluctuations).
    ☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲
    A unique and novel approach on how to manufacture high-quality nanoscale devices by state-of-the-art process technology (~ 10nm features) is elucidated including the historical context and physical principals of the various techniques and tools utilized in a modern cleanroom.
    ☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲☲

    Veröffentlichung anzeigen

Patente

Kurse

  • Leadership Challenge Program

    27 - 29, Nov, 2013

  • Practical Innovation

    05 - 06, Jun, 2014

  • Project Essentials

    18 - 19. Oct, 2011

Projekte

  • Industry Partner - Atolys

    Organization, development, milestones and deliverables of the project "Atolys - From Theoretical Calculations and Experiments to Improved High-Performance Semiconductors" as well as the generated intellectual property. In the project, the researchers Prof. Stefan Goedecker (University of Basel), Prof. Thomas Jung (Paul Scherrer Institute), Dr. Joerg Lehmann (ABB Corporate Research, Theoretical Physics) and Dr. Holger Bartolf (ABB Corporate Research, Power Semiconductors) combine unique and…

    Organization, development, milestones and deliverables of the project "Atolys - From Theoretical Calculations and Experiments to Improved High-Performance Semiconductors" as well as the generated intellectual property. In the project, the researchers Prof. Stefan Goedecker (University of Basel), Prof. Thomas Jung (Paul Scherrer Institute), Dr. Joerg Lehmann (ABB Corporate Research, Theoretical Physics) and Dr. Holger Bartolf (ABB Corporate Research, Power Semiconductors) combine unique and novel theoretical and experimental approaches to examine the interface between silicon carbide and silicon dioxide for MOS-controlled semiconductors (232kCHF funds, 2 years).

    Andere Mitarbeiter:innen
    Projekt anzeigen
  • Industry Partner - Trench-MOS Interface: NanoSiCTrenchFET

    Organization, development, milestones and deliverables of the project "Physical Studies of SiC Nano-Trench-MOSFETs" as well as the generated intellectual property. Research teams around Prof. Ernst Meyer (University of Basel), Prof. Jens Gobrecht (PSI), Dr. Marc Schnieper (CSEM), Dr. Renato Minamisawa and Dr. Holger Bartolf (ABB Corporate Research, Power Semiconductors) investigate novel trench-designs of SiC-based power MOSFETs (345kCHF funds, 2 years).

    Andere Mitarbeiter:innen
    Projekt anzeigen
  • Industry Partner - Dopant Imaging of Si and SiC Structures (WBG-NPA)

    Organization, development, milestones and deliverables of the project "WBG-NPA" as well as the generated intellectual property. Research teams around Prof. Ernst Meyer (University of Basel), Prof. Thomas Jung (PSI) and Dr. Holger Bartolf (ABB Corporate Research) investigate 2D dopant profiles in wide-band gap semiconductors by atomic force microscopy (285kCHF funds, 2 years).

    Andere Mitarbeiter:innen
    Projekt anzeigen
  • Fluctuation-Mechanisms in NbN-Based Superconducting Single-Photon Detectors

    Forschungskredit Candoc; 97 Grants out of 282 Proposals

    Principle investigator of project investigating fluctuation mechanisms in superconductors.
    90kCHF / 11 months

    • H. Bartolf et al. explained the dark-count mechanism in SNSPDs:
    • http://dx.doi.org/10.1103/PhysRevB.81.024502 (cited around 70x (January 2017))

    Projekt anzeigen

Auszeichnungen/Preise

  • Ph.D. Thesis of Mr. H. Rossmann

    Faculty of Natural Science / University of Basel

    Member of the Examinatorial Committee of Mr. H. R. Rossmann
    • Defense Date: 29th of June 2016 / Dept. Physik, neuer Hörsaal
    • Invited as the industrial expert on power semiconductor devices.

    Promotionsfach: Experimentalphysik
    • Thesis: http://edoc.unibas.ch/diss/DissB_11785

  • Member of the Program Committee

    Swiss NanoConvention

    Member of the Program Committee of the Swiss NanoConvention:
    http://swissnanoconvention.ch/2016/organisation/

  • Springer Monograph

    Springer

    http://www.springer.com/us/book/9783658122454

  • Invited Talk at the Swiss Nanoconvention

    Swiss NanoConvention

    Development of High-Power Semiconductors
    http://swissnanoconvention.ch/2015/showspeaker.php?id=104

  • Atolys

    Swiss Nanoscience Institute (SNI)

    Industrial partner of research project about SiC-based MOS-interfaces.
    232kCHF / 2 years

  • Trench-MOS (NanoSiCTrenchFET)

    Swiss Nanoscience Institute (SNI)

    Industrial partner of research project about SiC-based trench-MOS cell-architectures.
    345kCHF / 2 years

  • Dopant Imaging (WBG-NPA)

    Swiss Nanoscience Institute (SNI)

    Industrial partner of research project about AFM-based imaging of dopants.
    285kCHF / 2 years

  • Fluctuation-Mechanisms in NbN-Based Superconducting Single-Photon Detectors

    Forschungskredit Candoc; 97 Grants out of 282 Proposals

    Principle investigator of project investigating fluctuation mechanisms in superconductors.
    90kCHF / 11 months

  • Ph.D. Program

    University of Zürich

    Fully funded Ph.D. program at the University of Zürich.

Sprachen

  • German

    Muttersprache oder zweisprachig

  • English

    Fließend

  • French

    Gute Kenntnisse

Organisationen

  • Swiss Physical Society (SPS)

    -

    –Heute
  • German Physical Society (DPG)

    -

    –Heute

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