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Optimum Technology Matching ® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

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Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or [email protected].

Ordering Information

RF MEMS

LDMOS

RF7401

3 V W-CDMA BAND 1 LINEAR PA MODULE

The RF7401 is a high-power, high-efficiency, linear power amplifier

designed for use as the final RF amplifier in 3 V, 50  W-CDMA mobile cel-

lular equipment and spread-spectrum systems. This PA is developed for

UMTS Band 1 which operates in the 1920 MHz to 1980 MHz frequency

band. The RF7401 has a digital control pin which enables a low power

mode to reduce amplifier gain at lower power levels. The part also has an

integrated directional coupler which eliminates the need for an external

discrete coupler at the output. The RF7401 is fully HSDPA-compliant and

is assembled in a 10-pin, 3 mm x 3 mm module.

Features

 HSDPA Compliant

 Low Voltage Positive Bias

Supply (3.0 V to 4.2 V)

 +28.0 dBm Linear Output

Power (+26.5 dBm HSDPA)

 High Efficiency Operation

40% at P

OUT

= +28.0 dBm

 Internal Voltage Regulator

Eliminates the Need for Exter-

nal Reference Voltage (V

REF

)

 2-Mode Power States with

Digital Control Interface

 Supports DC/DC Converter

Operation

 Integrated Power Coupler

 Integrated Blocking and Col-

lector Decoupling Capacitors

Applications

 WCDMA/HSDPA Wireless

Data Cards

RF7401 3 V W-CDMA Band 1 Linear PA Module

RF7401PCBA-410 Fully Assembled Evaluation Board

DS100630

CONFIDENTIAL: NDA REQUIRED



Package Style: Module, 10-Pin, 3 mm x 3 mm x 1.0 mm

2 of 8

RF7401

DS100630

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or [email protected].

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage in Standby Mode 5.5 V

Supply Voltage in Idle Mode 5.5 V

Supply Voltage in Operating Mode,

50  Load

5.5 V

Supply Voltage, V

BAT

5.5 V

Control Voltage, VMODE 5.5 V

Control Voltage, V

5.5 V

RF - Input Power +10 dBm

RF - Output Power +30 dBm

Output Load VSWR (Ruggedness) 10:1

Operating Ambient Temperature -30 to +110 °C

Storage Temperature -55 to +150 °C

Parameter

Specification

Unit Condition

Min. Typ. Max.

Recommended Operating

Conditions

Operating Frequency Range 1920 1980 MHz

BAT

+3.0 +3.2 +4.2 V

+0.5

+3.2

+4.2 V

0 0.5 V PA disabled.

1.35 1.80 3.10 V PA enabled.

MODE

0 0.5 V Logic “low”.

1.35 1.80 3.10 V Logic “high”.

OUT

Maximum Linear Output

(HPM)

28.0

2,3

dBm High Power Mode (HPM)

Maximum Linear Output

(LPM)

2,3

dBm Low Power Mode (LPM)

Ambient Temperature -20 +25 +85 °C

Notes:

Minimum V

for max P

OUT

indicated. V

down to 0.5 V may be used for backed-off power when using DC/DC converter to conserve battery

current.

For operation at V

= +3.0 V, derate P

OUT

by 0.6 dB.

OUT

is specified for 3GPP (Voice) modulation. For HSDPA operation, derate P

OUT

by 1.5 dB:

HSDPA Configuration: c  12, d  15, hs  24

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EU Directive 2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

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