tsmc18rf工艺包（免安装OA格式）

This document is to provide SPICE circuit simulation parameters for the tsmc 0.18um RF IC 1P6M+ process in 1.8V/3.3V applications. Star-HSPICE (H2002.2 and later version), CADENCE Spectre (Spectre50.MSR and later version), Mentor Graphic Eldo (v6.3_3.1 and later version) and ADS (V2003C and later version) are used to verify & QA the BSIM3v3 models. Accuracy & QA in other simulators are not guaranteed. This model set includes the TSMC 0.18UM MIXED SIGNAL 1P6M+ SALICIDE 1.8V/3.3V SPICE MODELS (T-018-MM-SP-002) with modified corner conditions of core and IO nominal Vt MOSFETs to ensure model corner consistency between the baseband and RF models. Circuit designers need to use this model set for mixed baseband and high frequency circuit simulations. ******************************************************** ** TSMC RF SPICE MODEL ** ******************************************************** * * PROCESS : TSMC 0.18um Mixed-Signal Salicide (1P6M+, 1.8V/3.3V) * RF Spice Models * DOC. NO. : T-018-MM-SP-001 * VERSION : 1.3 * DATE : Aug.19, 2004 * ********************************************************************************* * * This document is intended to be a RF design reference guide for those who * use TSMC 0.18um RFIC 1P6M+ process in 1.8V/3.3V application. The 1.8V/3.3V * nominal Vt N/P MOS within/without deep-Nwell, MIM capacitor, spiral inductor, * MOS varactor, junction varactor, resistor, ESD and thick top metal interconnect * models are included. * ********************************************************************************** 1) MOS MODEL : a. Normal 1.8V N/PMOS model .lib MOS_RF : Typical model Model name NF L (um) Wf (um) low high low high low high ----------------------------------------------------------------- nmos_rf 1 64 0.18 0.5 1.5 8 (normal nmos) ----------------------------------------------------------------- pmos_rf 1 64 0.18 0.5 1.5 8 (normal pmos with DNW) ----------------------------------------------------------------- pmos_rf_nw 1 64 0.18 0.5 1.5 8 (normal pmos without DNW) ----------------------------------------------------------------- nmos_rf_mis 1 64 0.18 0.5 1.5 8 (mismatch nmos) ----------------------------------------------------------------- pmos_rf_mis 1 64 0.18 0.5 1.5 8 (mismatch pmos with DNW) ----------------------------------------------------------------- pmos_rf_nw_mis 1 64 0.18 0.5 1.5 8 (mismatch pmos without DNW) ----------------------------------------------------------------- **NF: Finger number **pmos_rf_nw: RF PMOS without DNW b. Normal 3.3V N/PMOS model .lib MOS_RF33 : Typical model Model name NF L (um) Wf (um) low high low high low high ----------------------------------------------------------------- nmos_rf33 1 64 0.35 0.5 1.5 8 (normal nmos) ----------------------------------------------------------------- pmos_rf33 1 64 0.3 0.5 1.5 8 (normal pmos with DNW) ----------------------------------------------------------------- pmos_rf33_nw 1 64 0.3 0.5 1.5 8 (normal pmos without DNW) ----------------------------------------------------------------- nmos_rf33_mis 1 64 0.35 0.5 1.5 8 (mismatch nmos) ----------------------------------------------------------------- pmos_rf33_mis 1 64 0.3 0.5 1.5 8 (mismatch pmos with DNW) ----------------------------------------------------------------- pmos_rf33_nw_mis 1 64 0.3 0.5 1.5 8 (mismatch pmos without DNW) ----------------------------------------------------------------- **NF: Finger number **pmos_rf33_nw: RF PMOS without DNW 2) MIM CAPACITOR MODEL : HF model: MiM_Cap w/i shield for 1PXM 4<=X<=6 MiM_Cap w/o shield for 1P6M 1. The MIM capacitors without Shield are modeled with sub-circuit 'mimcap_wos' .subckt mimcap : Typical model 2. The MIM capacitors with Shield are modeled with sub-circuit 'mimcap_shield' .subckt mimcap_shield : Typical model Model name lt wt unit low high low high ---------------------------------------------------- mimcap 4 30 4 30 um ---------------------------------------------------- **lt: length dimension of top metal **wt: width dimension of top metal **lt >= wt 3) SPIRAL INDUCTOR MODEL : The Inductors are modeled with sub-circuit 'spiral_s*_std', 'spiral_s*_sym', and 'spiral_s*_sym_ct' .subckt spiral_s2_std : Standard model with space=2um(fixed w=6um,9um,15um) for Inductance varies with turn(1/4turn increments) and radius .subckt spiral_s3_std : Standard model with space=3um(fixed w=30um) for Inductance varies with turn(1/4turn increments) and radius .subckt spiral_s2_sym : Symmetric model with space=2um(fixed w=9um,15um) for Inductance varies with turn(integral turn increments) and radius .subckt spiral_s3_sym : Symmetric model with space=3um(fixed w=30um) for Inductance varies with turn(integral turn increments) and radius .subckt spiral_s2_sym_ct : Symmetric model(CT) with space=2um(fixed w=9um,15um) for Inductance varies with turn(odd turn increments) and radius .subckt spiral_s3_sym_ct : Symmetric model(CT) with space=3um(fixed w=30um) for Inductance varies with turn(odd turn increments) and radius Model name turn rad (um) low high low high ------------------------------------------------------ spiral_s2_std W=6um 0.5 5.5 30 125 W=9um 0.5 5.5 30 125 W=15um 0.5 5.5 30 125 spiral_s3_std W=30um 1.5 5.5 30 125 ------------------------------------------------------ spiral_s2_sym W=9um 1 4 30 120 W=15um 1 5 40 120 spiral_s3_sym W=30um 1 5 65 150 ------------------------------------------------------ spiral_s2_sym_ct W=9um 1 3 30 120 W=15um 1 5 40 120 spiral_s3_sym_ct W=30um 1 5 65 150 ------------------------------------------------------ 4) MOS VARACTOR MODEL : Model name L(um) Group(g) Branch(b) Unit Cell ------------------------------------------------- moscap_rf 0.5 1 8 10 50 24 moscap_rf33 0.5 1 8 10 50 24 ------------------------------------------------- 5) JUNCTION VARACTOR MODEL : Model name L(um) W(um) Finger Unit Cell