Prasanna Kumar Thadapaneni

𝐈𝐧𝐝𝐢𝐚’𝐬 𝐒𝐞𝐦𝐢𝐜𝐨𝐧𝐝𝐮𝐜𝐭𝐨𝐫 𝐇𝐢𝐫𝐢𝐧𝐠 𝐒𝐮𝐫𝐠𝐞 𝐢𝐬 𝐑𝐞𝐝𝐞𝐟𝐢𝐧𝐢𝐧𝐠 𝐂𝐚𝐫𝐞𝐞𝐫𝐬! The semiconductor industry in India is experiencing an unprecedented hiring boom — gradually chipping away at IT placements and opening exciting opportunities for engineers across domains. 🔹 End-to-end hiring: RTL/SoC design, verification, embedded systems, manufacturing (process, packaging, yield). 🔹 Freshers’ salaries: ₹6–12 LPA (vs. ₹3–4 LPA in IT). 🔹 Aggressive campus recruitment from tier-2 & tier-3 colleges, not just IITs. 🔹 Internships: ₹40k–50k/month stipends to build hands-on chip design skills. 🔹 Hiring scale: ~12,000 freshers annually (up from 8,000 last year). 🔹 Career growth: Roles extend up to ₹20–120 LPA for architects & leaders. Fuelled by global supply chain shifts, EVs, telecom, defence, and government initiatives (DLI, PLI, ECMS), this hiring surge is reshaping student aspirations, especially in ECE and core engineering branches. With India projected to hit $103B semiconductor market by 2030, this is the right time for students and professionals to align their skills with VLSI, Embedded Systems, AI/ML hardware, and semiconductor manufacturing. The future is semiconductor — and India is powering ahead as a global hub! https://lnkd.in/gKtU5Gn2 #Semiconductor #VLSI #ChipDesign #EmbeddedSystems #Electronics #SoC #SemiconductorIndia #SemiconductorJobs #SemiconductorTalent #HiringTrends #Careers #ECE #Engineering #SemiconductorEcosystem #MakeInIndia #Innovation #ElectronicsManufacturing #FutureOfWork #AI #ML #Hardware #Manufacturing #IndiaSemiconductorMission

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DDR5 DRAM MODULE TECHNOLOGY DDR5 DRAM technology, the fifth generation of Double Data Rate Synchronous Dynamic Random Access Memory, offers significant performance improvements over DDR4 with higher bandwidth, lower power consumption, and enhanced data integrity, including on-die error correction code (ECC). Key Features and Advantages: 1. Increased Bandwidth: DDR5 delivers up to twice the bandwidth compared to DDR4, enabling faster data transfer rates and improved system performance. 2. Lower Power Consumption: DDR5 operates at a lower voltage (1.1V) and incorporates on-module power management integrated circuits (PMICs) for better energy efficiency. 3. Enhanced Data Integrity: DDR5 features on-die ECC, which detects and corrects errors before they reach the CPU, leading to more robust and reliable memory performance. 4. Dual 32-bit Subchannels: DDR5 utilizes two independent 32-bit subchannels on a single module, allowing for increased data transfer efficiency and improved scaling performance. 5. Increased Banks and Burst Length: DDR5 doubles the number of banks (16 to 32) and the minimum burst length (8 to 16), further enhancing data bus efficiency and reducing the number of reads/writes to access the same cache data line. 6. Scalable Memory: DDR5 is designed to support higher capacities and speeds, making it suitable for demanding applications like gaming, content creation, and data centers. 7. Improved Performance: DDR5 offers a significant performance boost for CPUs and platforms that require more cores and memory bandwidth. 8. On-die ECC: All DDR5 chips have on-die error-correction code, that detects and corrects errors before sending data to the CPU, to improve reliability and allow denser RAM chips which lowers per-chip defect rate. 9. Power Management Integrated Circuits (PMIC): Regulates the power required by the various components of the memory module. 

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Importance of Testcase in ASIC Verification in VLSI (Complete details with Categorization): A Testcase in any language is used to verify the functional correctness and the integrity of the design. Its basic functionality is to check whether the design is meeting its requirement as per the specification [1] Functional Tests --> In this type of test, the functionality or feature of an IP/module or a subsystem is verified a. Data transfer like read and write cycle, address and data phase, wait states. b. Protocol checks or feature specific to IP, FSM verification c. Command based training, sequence checks and Data Path checks d. Fault and error injection tests, calibration tests [2] Register-based Tests --> RW Tests, RO/WO Tests, Default Read/Hard reset Tests, Soft reset tests, Negative RO/WO Tests, Aliasing, Broadcasting, Special Register test. [3] Connectivity Tests [4] Clock and Reset Tests [5] Boot up Tests, wake up sequence, training sequence tests. For eg. In the case of DDR – MPC Training, RD DQ Calibration, Command Bus training, Write leveling, etc [6] Command and Sequence-based Tests. [7] Overlapping and Unallocated Region tests. [8] Back-to-back data transfer-based tests. [9] UPF Tests --> Power domain, Level Shifter, etc [10] Code Coverage Tests --> In this test toggle, expression, branch, FSM, and conditional coverage holes are measured, and depending on the holes, tests are being written to completely exercise the DUT [11] Functional Coverage Tests --> In these types of test categories, the functionality of DUT is being measured with the help of bins. There are several ways to do it. If there are coverage holes, more bins are coded to cover those areas, complex scenarios are covered with cross coverage. [12] Assertion checks --> Can be thought of as a check against the design. Basically, these are insertion points within the design which improve the observability and debugging ability. [13] C based test for processors and CPU. [14] GLS But to achieve all the above features, testcases are broadly classified into the following two types: [1] Directed Testcase: These are the scenarios that the verification engineers can think of or can anticipate. [2] RandomTestcase: These are the scenarios where the maximum amount of bugs can be caught. The random seeds will hit many different use cases which can not be anticipated earlier and has the probability to catch the design issues. Ideally, random tests can be classified into the following two categories: [1] Corner cases --> This is the bug that is only possible to catch when many different scenarios are processed together or they overlap and the best way to catch this type of scenario is to run more repeated regression with more seeds. [2] Stress testing -->These types of tests are useful to check the performance and the scalability of the DUT under multiple concurrent activities and unpredictable scenarios. #vlsi #asic #electronics #engineering

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EMIR Checks in VLSI : As process nodes scale to 7nm, 5nm, and beyond, power delivery challenges become critical. EMIR (Electro-Migration & IR drop) analysis isn’t just a signoff formality—it’s the difference between reliable silicon and expensive respins. 🔹 IR Drop Static IR drop: Caused by average current → impacts DC voltage levels, reducing noise margin. Dynamic IR drop: Caused by instantaneous switching activity → leads to timing failures & setup/hold violations. 🔹 Electro-Migration (EM) High current density displaces metal atoms. Leads to void formation (open circuits) or hillocks (shorts). Reliability degradation follows Black’s Equation → failure rate ~ J^n * exp(-Ea/kT), where J is current density. 🔹 Why EMIR Checks Matter ✅ Ensure power integrity across standard cells & macros ✅ Capture voltage droop under realistic switching scenarios ✅ Validate reliability margins of interconnects & vias ✅ Provide lifetime projections for SoCs under actual workloads 🔹 Best Practices Use vector-based dynamic analysis for realistic IR stress conditions. Perform early in-design EMIR closure (not just signoff). Apply localized decap insertion & grid reinforcement where droop hotspots appear. Correlate RTL activity → gate-level simulation → signoff IR analysis for accuracy. With billion-transistor SoCs, EMIR is no longer just a backend task—it’s a design co-pilot. #VLSI #SoC #Semiconductors #ChipDesign #Reliability #EMIR

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If you have access to best process technology then for low output offset voltage will you go with BJT based operational amplifier or MOSFET based operational amplifier? Key requirement: Low output offset voltage Offset voltage mainly comes from input stage mismatch. So, whether we choose a BJT-based op-amp or MOSFET-based op-amp depends on the device physics: ⸻ 1. BJT-based (bipolar op-amps): • Advantages: • Much lower input offset voltage than MOSFETs (typically a few µV). • Lower input-referred noise (especially 1/f noise), since BJTs are majority carrier devices with exponential I–V relation. • Better matching in bipolar devices because Vbe vs. Ic relation is very well controlled. • Disadvantages: • Higher input bias current (nA–µA range), which might be problematic in very high input impedance applications. ⸻ 2. MOSFET-based (CMOS op-amps): • Advantages: • Very low input bias current (pA to fA), ideal for very high-impedance sensors. • Easier integration in modern scaled CMOS processes (digital + analog SoCs). • Disadvantages: • Higher input offset voltage (hundreds of µV to mV) because of worse device matching (threshold voltage variation is larger than Vbe matching in BJTs). • More 1/f noise, which worsens offset drift. ⸻ Remember : If your primary goal is the lowest possible offset voltage, even with the best available process technology, a BJT-based (bipolar or BiCMOS) op-amp will be the better choice. But assuming you are allowed to use offset cancellation techniques then….. ⸻ Advanced Offset-Cancellation Techniques 1. Chopper Stabilization • Idea: Periodically modulate the input signal to a higher frequency where 1/f noise and offset are negligible. • Then demodulate back after amplification. • Effect: The DC offset and low-frequency 1/f noise are translated to high frequency, where they can be filtered out. • Result: Achieves ultra-low effective offset (<1 µV) even in CMOS. • Trade-offs: Adds switching artifacts (chopper ripple) and requires careful filtering. ⸻ 2. Auto-Zeroing • Idea: Use two phases: • Sample offset of the op-amp during one clock phase. • Subtract it from the signal during the other phase. • Effect: Cancels systematic offset down to a few µV. • Limitation: Increases noise due to sampling (aliasing of wideband noise). ⸻ Technology Trade-Off Summary • BJT-based op-amps: • Lowest natural offset due to physics. • Still the “default” choice for ultra-precision DC applications (weighing scales, instrumentation). • CMOS-based op-amps with chopper/auto-zero: • Can now achieve sub-µV offsets, competing with BJTs. • Integration-friendly for mixed-signal SoCs. • But more complex, slightly higher power, and potential switching artifacts. Conclusion: • If no chopper/auto-zero → BJT is better for lowest offset. • If allowed to use chopper/auto-zero → CMOS can match or even beat BJT in offset while keeping bias current ultra-low.

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Advancements and Challenges in Micron’s DRAM Technology & Biz #semihpc.com,#Micron,#HPC,#Hynix To understand Micron’s progress in the DRAM business, it is crucial to explore the paths they have taken to advance DRAM technology and the strategic decisions made during key technological milestones. These insights help explain their technological competitiveness, leadership, and choices that have shaped Micron’s current DRAM business. Despite facing challenges such as relatively low market share and technical difficulties, Micron managed to persevere and adapt in the DRAM market during the 2000s. Through complementary management strategies and appropriate technology development and adoption, Micron strengthened its position. Notably, after 2010, Micron acquired fabs from companies such as Elpida Memory, Nanya Technology, and Inotera Memories, while focusing on quality and technology-driven strategies. This included adopting the Buried Cell structure and applying a cell layout different from competitors. Micron’s approach to DRAM technology demonstrates their commitment to product quality and performance competitiveness. However, in the late 2010s, they adopted the same cell layout as their major competitors, resulting in a convergence in the structure and layout of DRAM cells among the top three companies. This shift reflects Micron’s practical and flexible approach, showcasing their ability to adopt proven technologies while maintaining adaptability. It also highlights an organizational culture that values technical input and incorporates it into corporate decision-making, a hallmark of a healthy enterprise. In contrast, some major memory companies that have disappeared from the market failed to meet the market’s demands and chose to prioritize showcasing high-quality products or technical prowess over practical, market-driven solutions. Micron’s case exemplifies a functional internal communication structure that enabled timely decision-making at critical junctures, such as technological optimization, investment, and adoption. Delaying EUV investments and pursuing D1 Alpha and D1 Beta DRAM production with complex multi-patterning technology might appear as a stopgap measure. However, this decision reflects. . . https://lnkd.in/gJUAZUfP

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India’s digital economy will touch $1T by 2030. We’ll need chips for everything—from smart remotes to rockets. But despite a ₹76,000 Cr incentive, a $100Bn domestic electronics market, and the world's largest VLSI talent pool, India still isn’t building its own semiconductors at scale. Here’s why the “garage startup” mindset doesn’t work for fabless semicon. And what we must do to break the cycle. 👇 BigEndian Semiconductors #semiconductors #makeinindia #fabless #ic #startupindia #startup

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