# (c) Silvaco Inc., 2019 go atlas # # This example demonstrates the use of the high-k mobility model for # mobility reduction due to remote phonon scattering. This is based # in the work in: # # Zhu, W. and Ma, T., "Temperature Dependence of CHannel Mobility in # HfO2-Gated NMOSFETs", IEEE Elec. Dev. Lett., Vol. 25, No. 2, pp. 89-91, # 2 Feb. 2004. # # The objective of this simulation is to reproduce the data in figure 2 # of that reference. # # First define a simple MISFET (2 micron chanel length). In the first # run we use a HfO2 gate dielectric. In the second half we use SiO2 # of equivalent thickness. # mesh x.m l=0.00 s=0.1 x.m l=0.8 s=0.05 x.m l=1.3 s=0.1 x.m l=1.8 s=0.05 x.m l=2.6 s=0.1 # y.m l=-0.004888 s=0.001 y.m l=0.0 s=0.001 y.m l=0.1 s=0.025 y.m l=1 s=0.2 # region num=1 y.min=0 y.max=1 silicon region num=2 y.max=0 material=HfO2 electrode name=gate x.min=0.6 x.max=2.0 y.max=-0.004888 electrode name=source x.max=0.5 y.min=0 y.max=0 electrode name=drain x.min=2.1 y.min=0 y.max=0 electrode substrate doping uniform conc=4e15 p.type doping gauss n.type conc=1e20 char=0.075 lat.char=0.05 reg=1 x.r=0.6 doping gauss n.type conc=1e20 char=0.075 lat.char=0.05 reg=1 x.l=2 # # The following line uses the high-k workfunction model. # contact name=gate aluminum # # Optionally modify workfunction. # #contact name=gate highk.al on.HfO2 # # Here we assign high background mobility to separate out # remote phonon effect, mobility rps.n rps.p mun0=5000 # # normally this would also be on to include cvt model. # #mobility cvt.n cvt.p # method newton carriers=2 # solve init solve solve vdrain=0.01 # save outf=highkex01_0.str # # Here we probe the normal field and channel charge. These are # used in the set file to help calculate effective channel mobility. # probe name=Eperp x=1.3 y=0.0001 dir=90 field probe name=charge x.min=1.1 x.max=1.5 n.conc integrate y.min=0 y.max=0.2 # log outf=highkex01_0.log solve vstep=0