
Fabrication of a complex-shaped mirror for an
extreme ultraviolet lithography illumination
system
Hideo Takino
Teruki Kobayashi
Norio Shibata
Masaaki Kuki
Akinori Itoh
Hideki Komatsuda
Nikon Corporation
1-10-1 Asamizodai Sagamihara
Kanagawa 228-0828, Japan
E-mail: takino@nikongw.nikon.co.jp
Abstract. We propose and discuss several fabrication processes for a
complex-shaped mirror, which is a fly-eye mirror, used in an extreme
ultraviolet lithography (EUVL) illumination system. The mirror has a com-
plex reflective surface consisting of many concave mirror elements that
are sections of a sphere; the top of each element is arc shaped. In the
present study, we focus on one process in which all elements are fabri-
cated individually and then arranged side-by-side to form the mirror.
Thus, as the first step in this process, we fabricate the arc-shaped ele-
ments made of invar with electroless nickel plating. The resultant reflec-
tive surfaces have a peak-to-valley (PV) surface accuracy of 0.31
m.
The surfaces have the rms roughnesses of about 0.23 and 0.35 nm in
areas of 110⫻ 140
m and 1⫻ 1
m, respectively. The slope accuracies
of the surfaces relative to the bottom surfaces are ⫺166 and 43 arc-sec
in the
y
and
x
directions, respectively. Thus, the mirror elements for the
fly-eye mirror can be fabricated very accurately with smooth surfaces,
although the mirror elements have a special shape compared to that of
general optics.
©
2003 Society of Photo-Optical Instrumentation Engineers.
[DOI: 10.1117/1.1591797]
Subject terms: extreme ultraviolet lithography; illumination; fly eye; mirror; inte-
grator; fabrication; optics; metal.
Paper 020539 received Dec. 11, 2002; revised manuscript received Feb. 21,
2003; accepted for publication Feb. 24, 2003. This paper is a revision of a paper
presented at the SPIE conference on Emerging Lithographic Technologies V,
February 2001, Santa Clara, CA. The paper presented there appears
(unrefereed) in SPIE Proceedings Vol. 4343.
1 Introduction
Reduction-projection exposure systems are widely used in
lithography processes for very large scale integration
共VLSI兲 manufacturing. In such a system, electronic circuit
patterns on a mask are illuminated and are reduced through
a projection lens, such that the reduced patterns are pro-
jected onto a silicon wafer. To further minimize the width
of the lines of the circuit patterns, an extreme ultraviolet
lithography 共EUVL兲 system, in which exposure is carried
out using an extreme ultraviolet wavelength of about 13
nm, has attracted attention and has been investigated glo-
bally.
In an EUVL system, the illumination system must
project light from a source onto the arc field of a mask
efficiently. The illumination system must also have both
irradiance uniformity and spatial coherence
uniformity
across the arc field. In recent years, several types of illumi-
nation systems for EUVL have been proposed.
1–6
One such
system, proposed by Komatsuda, includes two types of fly-
eye mirrors used as key optics: an arc-shaped fly-eye mirror
and a rectangular fly-eye mirror.
5
Both the arc-shaped and the rectangular fly-eye mirrors
have a complex reflective surface consisting of many con-
cave mirror elements; the top of each element is arc shaped
for the former and rectangular for the latter. Owing to this
complexity, these mirrors are difficult to fabricate. To our
knowledge, a mirror with such a complex reflective surface
has not yet been realized.
We propose and discuss several fabrication processes for
fly-eye mirrors. In particular, we focus on one process in
which all elements are fabricated individually and then ar-
ranged side by side to form the mirror. Here, the arc-shaped
Fig. 1 EUVL optical system using the illuminator with fly-eye mir-
rors. Light source: laser, lens, nozzle for emitting gas jet, and EUV
light source. Collector mirror group: ellipsoidal and concave mirrors.
Fly-eye mirror group: arc-shaped and rectangular fly-eye mirrors.
Condenser mirror group: aspheric and plane mirrors.
2676 Opt. Eng. 42(9) 2676–2682 (September 2003) 0091-3286/2003/$15.00 © 2003 Society of Photo-Optical Instrumentation Engineers
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