Advancements and Challenges in Micron’s DRAM Technology & Biz #semihpc.com,#Micron,#HPC,#Hynix To understand Micron’s progress in the DRAM business, it is crucial to explore the paths they have taken to advance DRAM technology and the strategic decisions made during key technological milestones. These insights help explain their technological competitiveness, leadership, and choices that have shaped Micron’s current DRAM business. Despite facing challenges such as relatively low market share and technical difficulties, Micron managed to persevere and adapt in the DRAM market during the 2000s. Through complementary management strategies and appropriate technology development and adoption, Micron strengthened its position. Notably, after 2010, Micron acquired fabs from companies such as Elpida Memory, Nanya Technology, and Inotera Memories, while focusing on quality and technology-driven strategies. This included adopting the Buried Cell structure and applying a cell layout different from competitors. Micron’s approach to DRAM technology demonstrates their commitment to product quality and performance competitiveness. However, in the late 2010s, they adopted the same cell layout as their major competitors, resulting in a convergence in the structure and layout of DRAM cells among the top three companies. This shift reflects Micron’s practical and flexible approach, showcasing their ability to adopt proven technologies while maintaining adaptability. It also highlights an organizational culture that values technical input and incorporates it into corporate decision-making, a hallmark of a healthy enterprise. In contrast, some major memory companies that have disappeared from the market failed to meet the market’s demands and chose to prioritize showcasing high-quality products or technical prowess over practical, market-driven solutions. Micron’s case exemplifies a functional internal communication structure that enabled timely decision-making at critical junctures, such as technological optimization, investment, and adoption. Delaying EUV investments and pursuing D1 Alpha and D1 Beta DRAM production with complex multi-patterning technology might appear as a stopgap measure. However, this decision reflects. . . https://lnkd.in/gJUAZUfP
Udayan Ganguly
10mo
Very informative
I don't think so.