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CMOS Fabrication Process: N-Well Implant and Drive-In Diffusion

The document outlines the key steps in the CMOS fabrication process, including n-well implant and diffusion, field oxide growth, gate oxide growth, depositing and etching a gate poly silicon layer, implanting n-channel and p-channel regions, depositing an insulating layer, opening contact cuts, metallization, and forming a final CMOS inverter circuit. Each step is illustrated and notes are provided on implanting channel regions separately, avoiding poly undercut, self-aligned source/drain regions, and smoothing abrupt steps with deposited oxide.

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Kumar Amit Verma
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199 views

CMOS Fabrication Process: N-Well Implant and Drive-In Diffusion

The document outlines the key steps in the CMOS fabrication process, including n-well implant and diffusion, field oxide growth, gate oxide growth, depositing and etching a gate poly silicon layer, implanting n-channel and p-channel regions, depositing an insulating layer, opening contact cuts, metallization, and forming a final CMOS inverter circuit. Each step is illustrated and notes are provided on implanting channel regions separately, avoiding poly undercut, self-aligned source/drain regions, and smoothing abrupt steps with deposited oxide.

Uploaded by

Kumar Amit Verma
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Cmos_process.

ppt

CMOS Fabrication Process


N-Well Implant and Drive-in Diffusion

Dotted outline is the final circuit (for reference).

Heavy line is the current process step

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

P+ Implant and Mask for Field Oxide Growth

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Thick Field Oxide Growth

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Gate Oxide Growth

Before the next process step, by masking the wafer, the channel regions can be separately implanted. This extra step will allow adjustment of Vtn and Vtp by altering NB locally under each gate.

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Deposit Gate Poly Si Layer and Etch

Avoid undercut of poly so that L is accurately transferred from the mask.

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Implant n-Channel n+ Regions

Gate poly acts as mask and thus alignment of gate and source/drain is automatic (self-aligned process).

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Implant n-Channel p+ Regions

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Implant n-Well n + Region

n+ contact for n-well

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Deposition of CVD SiO2 Layer

Abrupt steps are smoothed over with deposited insulating layer.

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

Open Contact Cuts

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

10

Metallization

Deposit aluminum (Al) layer.

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

11

Final Circuit - CMOS Inverter

p+ contact n+ contact

Entire wafer is covered with a protective layer of glass (passivated), not shown here.
p

Pn+ contact for n-well Requires a p+ contact for connection to substrate.

EE534 GYRobinson CSU

Ref: W. Maly, Atlas of IC Technologies, 1987.

12

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