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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

This document provides the product specification for the 2SA1262 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-220 package and audio/general purpose applications. Tables list the transistor's maximum ratings and characteristics such as collector-emitter breakdown voltage, saturation voltage, current gain, and switching times. Dimension drawings show the TO-220 package outline.

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31 views4 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

This document provides the product specification for the 2SA1262 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-220 package and audio/general purpose applications. Tables list the transistor's maximum ratings and characteristics such as collector-emitter breakdown voltage, saturation voltage, current gain, and switching times. Dimension drawings show the TO-220 package outline.

Uploaded by

el_george0079491
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1262

DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -6 -4 -1 30 150 -55~150 UNIT V V V A A W

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IE=0.2A ; VCE=-12V IE=0 ; VCB=-10V ;f=1MHz 40 MIN -60

2SA1262

SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob

TYP.

MAX

UNIT V

-0.6 -100 -100

V A A

15 90

MHz pF

Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10A;VCC=-20V 0.25 0.75 0.25 s s s

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors


PACKAGE OUTLINE

2SA1262

Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1262

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