PD - 94858
IRG4PC50WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free
C
VCES = 600V
G E
VCE(on) max. = 2.30V
@VGE = 15V, IC = 27A
n-channel
Benefits
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz) Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Absolute Maximum Ratings
TO-247AC
Max.
600 55 27 220 220 20 170 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm)
Units
V A
V mJ W C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.24 6 (0.21)
Max.
0.64 40
Units
C/W g (oz)
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1
11/26/03
IRG4PC50WPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)CES
V(BR)CES/TJ
VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage 0.41 V/C VGE = 0V, IC = 5.0mA 1.93 2.3 IC = 27A VGE = 15V Collector-to-Emitter Saturation Voltage 2.25 IC = 55A See Fig.2, 5 V 1.71 IC = 27A , TJ = 150C Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, IC = 1.0mA Forward Transconductance 27 41 S VCE = 100 V, IC = 27A 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t d(on) tr t d(off) tf E ts LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 180 270 IC = 27A 24 36 nC VCC = 400V See Fig.8 63 95 VGE = 15V 46 33 TJ = 25C ns 120 180 IC = 27A, VCC = 480V 57 86 VGE = 15V, RG = 5.0 0.08 Energy losses include "tail" 0.32 mJ See Fig. 9, 10, 14 0.40 0.5 31 TJ = 150C, 43 IC = 27A, VCC = 480V ns 210 VGE = 15V, RG = 5.0 62 Energy losses include "tail" 1.14 mJ See Fig. 10,11, 14 13 nH Measured 5mm from package 3700 VGE = 0V 260 pF VCC = 30V See Fig. 7 68 = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0,
(See fig. 13a)
Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC50WPbF
100 For both:
Triangular wave:
80
Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified
Load Current ( A )
Power Dissipation = 40W
Clamp voltage: 80% of rated
60 Square wave: 60% of rated voltage 40
20
Ideal diodes
0 0.1 1 10 100
A
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C , Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
100
100
TJ = 150 C
TJ = 150 C TJ = 25 C
TJ = 25 C
10
10
V GE = 15V 20s PULSE WIDTH
1 10
V CC = 50V 5s PULSE WIDTH
5 6 7 8 9 10 11
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4PC50WPbF
60
3.0
50
40
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH
Maximum DC Collector Current(A)
IC = 54 A
2.0
30
IC = 27 A IC =13.5 A
20
10
25
50
75
100
125
150
1.0 -60 -40 -20
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
Thermal Response (Z thJC )
0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC50WPbF
8000
VGE , Gate-to-Emitter Voltage (V)
100
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 27A
C, Capacitance (pF)
6000
16
Cies
4000
12
2000
Coes Cres
10
VCE , Collector-to-Emitter Voltage (V)
40
80
120
160
200
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 27A
10
RG = Ohm 5.0 VGE = 15V VCC = 480V IC = 54 A
2.0
IC = 27 A IC = 13.5 A
1.0
0.0
R , Gate Resistance ) RG G , GateResistance ((Ohm)
10
20
30
40
50
0.1 -60 -40 -20
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4PC50WPbF
3.0
2.0
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC VGE
= Ohm 5.0 = 150 C = 480V = 15V
1000
VGE = 20V T J = 125 oC
100
1.0
10
0.0
10
20
30
40
50
60
SAFE OPERATING AREA
1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
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IRG4PC50WPbF
L 50V 1000V VC *
0 - 480V
D.U.T.
RL =
480V 4 X I C@25C
480F 960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L Driver* 50V 1000V VC D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type as D.U.T., VC = 480V
c d
90%
e
VC 90%
10%
t d(off)
Fig. 14b - Switching Loss
Waveforms
10% I C 5% t d(on)
tr E on E ts = (Eon +Eoff )
tf t=5s E off
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IRG4PC50WPbF
TO-247AC Package Outline
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) C A S 2.60 (.102) 2.20 (.087)
Dimensions are shown in millimeters (inches)
-D5.30 (.209) 4.70 (.185)
2.50 (.089) 1.50 (.059) 4
2X
5.50 (.217) 4.50 (.177)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC.
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118)
LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4-
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
IRFPE30
56 035H 57
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03
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