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1N4148 Ultra High-Speed Diode Specs

The 1N4148 is a general purpose silicon switching diode with a fast switching speed. It has a DO-35 case with solderable leads and a cathode band marking. The diode has a maximum non-repetitive peak reverse voltage of 100V, average rectified output current of 30mA, and operates between -65°C to +175°C.

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61 views2 pages

1N4148 Ultra High-Speed Diode Specs

The 1N4148 is a general purpose silicon switching diode with a fast switching speed. It has a DO-35 case with solderable leads and a cathode band marking. The diode has a maximum non-repetitive peak reverse voltage of 100V, average rectified output current of 30mA, and operates between -65°C to +175°C.

Uploaded by

vladoius_1
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1N4148

Switching Diode DO-35 Features


a a a Fast switching speed General purpose rectification Silicon epitaxial planar construction
25.4 4.0 25.4

Mechanical Data
a a a a Case: DO-35 Leads:Solderableper MIL-STD-202, Method 208 Polarity: Cathode band Marking: Type number Weight: 0.13 grams (approx.)
0.6 2.0

Dimensions in Millimeters

Maximum Ratings and Electrical Characteristics


Rating at 25+ambient temperature unless otherwise specified. Maximum Ratings Type Number Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Output Current Non-Repetitive Peak Forward Surge Current @ t=1.0s Power Dissipation (Note 1)at Tamb = 25 OC Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Range

Symbol VRM
VRRM VRWM VR

1N4148 100 75 53 150


500

Units V V V mA mA mW K/W O C Max


1.0 5.0 50 30 25 4.0 4.0

VR(RMS) Io IFSM Pd R JA TJ, TSTG Symbol VF

500 350 -65 to + 175 Min


-

Electrical Characteristics Type Number


Forward Voltage @ IF=10mA Peak Reverse Current VR=75V VR=70V, Tj=150+ VR=20V, TJ=150+ VR=20V VR=0, f=1.0MHz

Units V
uA uA uA nA

IR Cj trr

Capacitance

Reverse Recovery Time (Note 1)

pF nS

Note: 1. Reverse Recovery Test Conditions: IF=10mA to IR=1.0mA VR=6.0V, RL=100

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RATINGS AND CHARACTERISTIC CURVES (1N4148)


FIG.1- FORWARD CHARACTERISTICS CURVE
1000

FIG.2- LEAKAGE CURRENT VS JUNCTION TEMPERATURE


10,000

IF, INSTANTANEOUS FORWARD CURRENT (mA)

100 1000

10

IR, LEAKAGE CURRENT (nA)

100

1.0

0.1

10

0.01 0 1 2 1

VR = 20V VF, INSTANTANEOUS FORWARD VOLTAGE (V)


0 100 200
O

Tj, JUNCTION TEMPERATURE ( C)

FIG.3- ADMISSIBLE POWER DISSIPATION VS AMBIENT TEMPERATURE


mW
1000 900 800

Ptot 700
600 500 400 300 200 100 0 0 100

200 C

Tamb

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