AP9915H/J
Advanced Power Electronics Corp.
! Low on-resistance ! Capable of 2.5V gate drive ! Low drive current ! Single Drive Requirement G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 50m" 20A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25# ID@TC=125# IDM PD@TC=25# TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 20 12 20 16 41 26 0.2 -55 to 150 -55 to 150
Units V V A A A W W/ # # #
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit #/W #/W
Data and specifications subject to change without notice
200218032
AP9915H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
$BVDSS/$Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50
Max. Units 50 80 1.2 1 25 100 V V/# m" m" V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25#, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= 12V ID=10A VDS=20V VGS=5V VDS=10V ID=10A RG=3.3",VGS=5V RD=1" VGS=0V VDS=20V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 20 41 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
Tj=25#, IS=20A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP9915H/J
50
40
T C =25 o C 4.5V
40
30
T C =150 o C 4.5V
ID , Drain Current (A)
30
ID , Drain Current (A)
3.5V
3.5V
20
20
2.5V
10
2.5V
10
V GS =1.5V
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5
V GS =1.5V
6 7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.8
ID=6A T C =25 C
50
I D =6A
1.6
V GS =4.5V
Normalized R DS(ON)
1.4
RDS(ON) (m" )
1.2
40
1.0
0.8
30
0.6
-50
50
100
150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
AP9915H/J
25
60
50 20
ID , Drain Current (A)
40 15
PD (W)
10 5 0 25 50 75 100 125 150
30
20
10
0 0 50 100 150
T c , Case Temperature ( C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
Duty Factor = 0.5
100
Normalized Thermal Response (R thjc)
10us ID (A) 100us 1ms 10ms 100ms
1
0.2
10
0.1
0.1
0.05
0.02 Single Pulse 0.01
PDM
t T
T c =25 o C Single Pulse
0.1 0.1 1 10 100
0.01 0.00001 0.0001 0.001 0.01
Duty Factor = t/T Peak Tj = PDM x Rthjc + TC
0.1
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9915H/J
16
f=1.0MHz
1000
I D =20A
14
VGS , Gate to Source Voltage (V)
12
V DS =12V V DS =16V V DS =20V C (pF) Ciss Coss
100
10
Crss
0 0 2 4 6 8 10 12 14 16 18 20
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
1.2
10
0.95
T j =150 C
VGS(th) (V)
T j =25 o C IS (A)
1
0.7
0.1
0.45
0.01 0 0.4 0.8 1.2 1.6
0.2 -50 0 50 100 150
V SD (V)
T j , Junction Temperature ( o C )
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
AP9915H/J
RD
VDS 90%
VDS
TO THE OSCILLOSCOPE 0.5x RATED VDS
RG
+ 5v -
S VGS
10% VGS td(on) tr td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS TO THE OSCILLOSCOPE
QG 5V
G S
+
RATED VDS
QGS
QGD
VGS
1~ 3 mA
IG ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
