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Bansal Group of Institutes

This document is an exam paper for an electronics devices and circuits course. It contains 5 units and a total of 25 questions. The exam is 3 hours long and worth a total of 70 marks. Students must attempt both questions from each unit. Questions have multiple parts ranging from 50-400 words. Part a is worth 2 marks, part b is worth 2 marks, and part c is worth 3 marks. Part d contains internal choices and is worth 7 marks. The questions cover topics like semiconductor diodes, transistor characteristics, amplifier configurations, feedback in amplifiers, oscillators, and power amplifiers.

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147 views3 pages

Bansal Group of Institutes

This document is an exam paper for an electronics devices and circuits course. It contains 5 units and a total of 25 questions. The exam is 3 hours long and worth a total of 70 marks. Students must attempt both questions from each unit. Questions have multiple parts ranging from 50-400 words. Part a is worth 2 marks, part b is worth 2 marks, and part c is worth 3 marks. Part d contains internal choices and is worth 7 marks. The questions cover topics like semiconductor diodes, transistor characteristics, amplifier configurations, feedback in amplifiers, oscillators, and power amplifiers.

Uploaded by

kkp0650
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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[Total No of Questions: 25]

[Total No. of Printed Pages: 3]


Roll No. .

BANSAL GROUP OF INSTITUTES

EX- 304
B.E. ( 3rd Semester)
PUT, November-2014

Electronics Devices & circuit - I


Time: 3 Hours
Note:

Maximum Marks: 70

Attempt both questions.


1. All parts of each question are to be attempted at one place
2. Explain through sketches wherever possible.
3. Assume any missing data suitably.
4. Part a (50 words)- [2 marks]; b (50 words) [2 marks ]and Part c (100 words)-[3 marks] are COMPULSORY.
5. Part d (400 words) have internal choice [7 marks].

UNIT 1
Q.1 (a) What do you mean by semiconductor diode?.
(b) Define clipper and clamper circuit and its types.
(c) Discuss the working of full wave bridge rectifier .
(d) Explain the V-I characteristics and working of Tunnel diode. what is the negative resistance region in Tunnel
diode, explain it?
OR
(e) For zener diode network shown below determine VL, VR, IZ, PZ.

UNIT-2
Q.2 (a) Draw and explain input characteristics of CE transistor.
(b) Write down the difference between JFET & MOSFET.

(c) Explain the working of depletion MOSFET with circuit symbol & characteristics.
(d) Explain the operation of JFET. Also give its characteristics curves and enlist its merits and demerits over BJT.
OR
(e) Explain the principle and operation of UJT with the help of circuit symbol and V-I characteristics.

UNIT-3
Q.3 (a) Why stabilization of operating point is necessary?.
(b) Why cascading of Amplifier is needed. What are effect of cascading on gain and bandwidth?
(c) Give h parameter model for CE configuration. Also define hie, hfe, hre, hoe for it.
(d) Draw bootstrapped Darlington circuit and explain how this increase the input resistance
OR
Q.(e) Find the value of IC, IB, VCE, from the circuit given below

UNIT-4
Q.2 (a) Explain the Barkhausen criterion for oscillator.
(b) Discuss the current series and voltage series feedback.
(c) Discuss the effect of negative feedback on input resistance, output resistance and stability.
(d)Explain the working of wein bridge oscillator. What is the frequency of oscillation for it
OR
(e) Draw circuit diagram of colpitts oscillator and explain its working. Also determine the frequency of operation.
UNIT-5
Q.2 (a) Write short note on class C power amplifier.

(b) Explain crossover distortion and harmonic distortion.


(c) Draw and explain single tuned voltage amplifier.
(d) Explain the working of class B push pull power amplifier. What is the efficiency of it?
OR
(e) Explain the working of transformer coupled class A power amplifier. Derive the formula for its efficiency.

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