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SavantIC Semiconductor

This document provides the product specification for the SavantIC Semiconductor 2SB1366 silicon PNP power transistor. The transistor has a TO-220F package and is intended for general purpose applications with a low collector saturation voltage of -1.0V max and collector power dissipation of 25W. Key electrical characteristics and parameters are provided including breakdown voltage, current gain, switching times and more. Dimensional outlines for the TO-220F package are also included.

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1K views4 pages

SavantIC Semiconductor

This document provides the product specification for the SavantIC Semiconductor 2SB1366 silicon PNP power transistor. The transistor has a TO-220F package and is intended for general purpose applications with a low collector saturation voltage of -1.0V max and collector power dissipation of 25W. Key electrical characteristics and parameters are provided including breakdown voltage, current gain, switching times and more. Dimensional outlines for the TO-220F package are also included.

Uploaded by

melecio123
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB1366

DESCRIPTION
·With TO-220F package
·Complement to type 2SD2058
·Low collector saturation voltage:
VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A
·Collector power dissipation:
PC=25W(TC=25 )

APPLICATIONS
·With general purpose applications

PINNING

PIN DESCRIPTION

1 Emitter

2 Collector
Fig.1 simplified outline (TO-220F) and symbol
3 Base

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -60 V

VCEO Collector-emitter voltage Open base -60 V

VEBO Emitter-base voltage Open collector -7 V

IC Collector current -3 A

IB Base current -0.5 A

Ta=25 2.0
PC Collector dissipation W
TC=25 25

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB1366

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -60 V

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V

VBE Base-emitter on voltage IC=-0.5A;VCE=-5V -1.0 V

ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA

IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA

hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 200

hFE-2 DC current gain IC=-3A ; VCE=-5V 20

fT Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz

COB Collector output capacitance f=1MHz;VCB=-10V 150 pF

Switching times

ton Turn-on time 0.4 µs

IC=-2.0A IB1=-IB2=-0.2A
ts Storage time 1.7 µs
VCC=-30V ,RL=15D

tf Fall time 0.5 µs

hFE-1 Classifications

O Y

60-120 100-200

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB1366

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB1366

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