Si4539DY
Dual N- and P-Channel 30-V (D-S) Rated MOSFET
Product Summary
VDS (V)
N-Channel
N Channel
30
P Channel
P-Channel
30
30
rDS(on) ()
ID (A)
0.037 @ VGS = 10 V
5.8
0.055 @ VGS = 4.5 V
4.7
0.053 @ VGS = 10 V
4.9
0.095 @ VGS = 4.5 V
3.6
D1 D1
S2
SO-8
S1
D1
G1
D1
S2
D2
G2
D2
G2
G1
Top View
S1
D2 D2
N-Channel MOSFET
P-Channel MOSFET
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
30
Gate-Source Voltage
VGS
20
20
5.8
4.9
4.6
3.9
IDM
30
30
IS
1.7
1.7
2.0
2.0
1.3
1.3
Continuous Drain Current (TJ = 150C)a
TA = 25C
TA = 70C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25C
Maximum Power Dissipationa
TA = 70C
Operating Junction and Storage Temperature Range
ID
PD
TJ, Tstg
Unit
V
W
C
55 to 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta
Symbol
N- or P-Channel
Unit
RthJA
62.5
C/W
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70152.
A SPICE Model data sheet is available for this product (FaxBack document #70555).
Siliconix
S-49534Rev. D, 06-Oct-97
Si4539DY
Specifications (TJ = 25C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body
Zero Gate Voltage Drain Current
On State Drain Currentb
On-State
Drain Source On-State
Drain-Source
On State Resistanceb
Forward Transconductance b
Diode Forward Voltageb
VGS(th)
IGSS
IDSS
ID(on)
D( )
rDS(on)
DS( )
gfs
f
VSD
VDS = VGS, ID = 250 mA
N-Ch
1.0
VDS = VGS, ID = 250 mA
P-Ch
1.0
N-Ch
"100
P-Ch
"100
VDS = 30 V, VGS = 0 V
N-Ch
VDS = 30 V, VGS = 0 V
P-Ch
VDS = 30 V, VGS = 0 V, TJ = 55C
N-Ch
25
VDS = 30 V, VGS = 0 V, TJ = 55C
P-Ch
25
VDS = 0 V
V, VGS = "20 V
VDS w 5 V, VGS = 10 V
N-Ch
20
VDS v 5 V, VGS = 10 V
P-Ch
20
VGS = 10 V, ID = 5.8 A
N-Ch
0.030
0.037
VGS = 10 V, ID = 4.9 A
P-Ch
0.043
0.053
VGS = 4.5 V, ID = 4.7 A
N-Ch
0.042
0.055
VGS = 4.5 V, ID = 3.6 A
P-Ch
0.070
0.095
VDS = 15 V, ID = 5.8 A
N-Ch
13
VDS = 15 V, ID = 4.9 A
P-Ch
10
IS = 1.7 A, VGS = 0 V
N-Ch
0.8
1.2
IS = 1.7 A, VGS = 0 V
P-Ch
0.8
1.2
N-Ch
18
25
P-Ch
16
25
N-Ch
4.5
P-Ch
N-Ch
2.5
P-Ch
N-Ch
10
16
nA
mA
Dynamica
Total Gate Charge
Qg
Gate Source Charge
Gate-Source
Qgs
Gate Drain Charge
Gate-Drain
Qgdd
Turn On Delay Time
Turn-On
td(on)
d( )
Rise Time
Turn Off Delay Time
Turn-Off
N-Channel
VDS = 15 V
V, VGS = 10 V,
V ID = 55.8
8A
P
Channel
P-Channel
VDS = 15 V, VGS = 10 V, ID = 4.9 A
nC
P-Ch
15
N-Ch
20
16
tr
N-Channel
N
Channel
VDD = 15 V, RL =15 W
ID ^ 1 A
A, VGEN = 10 V,
V RG = 6 W
P-Ch
13
20
N-Ch
27
40
td(off)
d( ff)
P-Channel
VDD = 15 V, RL = 15 W
ID ^ 1
1A
A, VGEN = 10
10 V,
V RG = 6 W
P-Ch
25
40
N-Ch
24
35
P-Ch
15
25
IF = 1.7 A, di/dt = 100 A/ms
N-Ch
45
80
IF = 1.7 A, di/dt = 100 A/ms
P-Ch
60
90
Fall Time
tf
Source Drain Reverse Recovery Time
Source-Drain
trr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Siliconix
S-49534Rev. D, 06-Oct-97
ns
Si4539DY
Typical Characteristics (25C Unless Noted)
N-Channel
Output Characteristics
Transfer Characteristics
30
30
VGS = 10, 9, 8, 7, 6, 5 V
TC = 55C
24
18
I D Drain Current (A)
I D Drain Current (A)
24
4V
12
6
2, 1 V
25C
125C
18
12
3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS Gate-to-Source Voltage (V)
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.10
1250
0.08
1000
C Capacitance (pF)
rDS(on) On-Resistance ( )
Ciss
0.06
VGS = 4.5 V
0.04
VGS = 10 V
0.02
750
500
Coss
250
Crss
0
0
12
18
24
30
36
Gate Charge
1.75
rDS(on) On-Resistance ( )
(Normalized)
VGS Gate-to-Source Voltage (V)
2.00
VDS = 15 V
ID = 5.8 A
0
0
12
16
Qg Total Gate Charge (nC)
Siliconix
S-49534Rev. D, 06-Oct-97
12
18
24
30
VDS Drain-to-Source Voltage (V)
ID Drain Current (A)
10
20
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 5.8 A
1.50
1.25
1.00
0.75
0.5
50
25
25
50
75
100
125
150
TJ Junction Temperature (C)
Si4539DY
Typical Characteristics (25C Unless Noted)
Source-Drain Diode Forward Voltage
20
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.09
10
rDS(on) On-Resistance ( W )
I S Source Current (A)
0.08
TJ = 150C
TJ = 25C
0.07
0.06
ID = A
0.05
0.04
0.03
0.02
0.01
0
1
0.3
0.5
0.7
0.9
1.1
1.3
VSD Source-to-Drain Voltage (V)
50
0.2
10
Single Pulse Power
40
0.0
ID = 250 mA
Power (W)
VGS(th) Variance (V)
VGS Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
30
20
0.4
10
0.6
0.8
50
25
25
50
75
100
125
0
0.01
150
0.10
1.00
TJ Temperature (C)
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
0.02
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
104
103
102
101
10
Square Wave Pulse Duration (sec)
Siliconix
S-49534Rev. D, 06-Oct-97
30
Si4539DY
Typical Characteristics (25C Unless Noted)
P-Channel
Output Characteristics
Transfer Characteristics
30
30
VGS = 10, 9, 8, 7, 6 V
TC = 55C
18
12
4V
6
2, 1 V
125C
18
12
3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.16
1200
VGS = 4.5 V
0.08
Capacitance
1500
C Capacitance (pF)
rDS(on) On-Resistance ( )
On-Resistance vs. Drain Current
0.20
0.12
VGS Gate-to-Source Voltage (V)
VDS Drain-to-Source Voltage (V)
VGS = 10 V
0.04
Ciss
900
600
Coss
300
Crss
0
0
12
18
24
30
Gate Charge
10
1.75
rDS(on) On-Resistance ( )
(Normalized)
VDS = 15 V
ID = 4.9 A
0
0
12
16
Qg Total Gate Charge (nC)
Siliconix
S-49534Rev. D, 06-Oct-97
12
18
24
30
VDS Drain-to-Source Voltage (V)
ID Drain Current (A)
VGS Gate-to-Source Voltage (V)
25C
24
5V
I D Drain Current (A)
I D Drain Current (A)
24
20
1.50
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 4.9 A
1.25
1.00
0.75
0.5
50
25
25
50
75
100
125
TJ Junction Temperature (C)
150
Si4539DY
Typical Characteristics (25C Unless Noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.75
rDS(on) On-Resistance ( W )
I S Source Current (A)
20
P-Channel
10
TJ = 150C
TJ = 25C
0.60
ID = 4.9 A
0.45
0.30
0.15
1
0.3
0.5
0.7
0.9
1.1
1.3
VSD Source-to-Drain Voltage (V)
50
10
Single Pulse Power
40
0.5
ID = 250 mA
0.3
Power (W)
VGS(th) Variance (V)
VGS Gate-to-Source Voltage (V)
Threshold Voltage
0.7
0.1
0.1
30
20
10
0.3
50
25
25
50
75
100
125
0
0.01
150
0.10
TJ Temperature (C)
1.00
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
0.02
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
104
103
102
101
10
Square Wave Pulse Duration (sec)
Siliconix
S-49534Rev. D, 06-Oct-97
30
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