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NTE161 Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc: Features

This document provides specifications for the NTE161 silicon NPN transistor. It is intended for use in VHF and UHF amplifier and mixer/oscillator applications. Key features include a high current gain-bandwidth product of 600MHz and low output capacitance of 1.7pF maximum. The document lists absolute maximum ratings and typical electrical characteristics, including breakdown voltages, current and power ratings, gain, capacitance and other parameters. Dimensional drawings of the transistor package are also provided.

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18 views2 pages

NTE161 Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc: Features

This document provides specifications for the NTE161 silicon NPN transistor. It is intended for use in VHF and UHF amplifier and mixer/oscillator applications. Key features include a high current gain-bandwidth product of 600MHz and low output capacitance of 1.7pF maximum. The document lists absolute maximum ratings and typical electrical characteristics, including breakdown voltages, current and power ratings, gain, capacitance and other parameters. Dimensional drawings of the transistor package are also provided.

Uploaded by

ch3o10836266
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE161

Silicon NPN Transistor


VHFUHF Amplifier, Mixer/Osc
Features:
D High Current GainBandwidth Product: fT = 600MHz (Min) @ f = 100MHz
D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/C
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter

Symbol

Test Conditions

Min

Typ Max Unit

OFF Characteristics
CollectorBase Breakdown Voltage

V(BR)CBO IC = 1.0A, IE = 0

30

EmitterBase Breakdown Voltage

V(BR)EBO IE = 10A, IC = 0

3.0

CollectorEmitter Sustaining Voltage VCEO(sus) IC = 3mA, IB = 0

15

Collector Cutoff Current

VCB = 15V, IE = 0

0.01

VCB = 15V, IE = 0, TA = +150C

1.0

ICBO

Electrical Characteristics (Contd): (TA = +25C unless otherwise specified)


Parameter

Symbol

Test Conditions

Min

Typ Max Unit

ON Characteristics
DC Current Gain

hFE

IC = 3mA, VCE = 1V

20

CollectorEmitter Saturation Voltage

VCE(sat)

IC = 10mA, IB = 1mA

0.4

BaseEmitter Saturation Voltage

VBE(sat)

IC = 10mA, IB = 1mA

1.0

600

MHz

VCB = 10V, IE = 0, f = 140kHz

1.7

pF

VCB = 0, IE = 0, f = 140kHz

3.0

pF

SmallSignal Characteristics
Current GainBandwidth Product
Output Capacitance

fT

IC = 10mA, VCE = 10V,


f = 100MHz, Note 1

Cobo

Input Capacitance

Cibo

VEB = 0.5V, IC = 0, f = 140kHz

2.0

pF

Noise Figure

NF

IC = 1mA, VCE = 6V,


RG = 400, f = 60MHz

6.0

dB

Amplifier Power Gain

Gpe

VCB = 12V, IC = 6mA, f = 200MHz

15

dB

Power Output

Po

VCB = 15V, IC = 8mA, f = 500MHz

30

mW

Collector Efficiency

VCB = 15V, IC = 8mA, f = 500MHz

25

Functional Test

Note 1. fT is defined as the frequency at which |hfe| extrapolates to unity.


.220 (5.58) Dia
.185 (4.7) Dia

.190
(4.82)

.030 (.762)

.500
(12.7)
Min

.018 (0.45) Dia


Base
Emitter

Collector

45
Case
.040 (1.02)

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