Edc Lab Manual
Edc Lab Manual
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LABORATORY MANUAL
DEPARTMENT OF
ELECTRONICS & COMMUNICATION ENGINEERING
Malla Reddy College Of Engineering and Technology
Maisammaguda, Dhulapally(Post),via Hakimpet,Secunderabad-500014
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1.1 RESISTOR
1.4 CAPACITOR
10
2. CIRCUIT SYMBOLS
11
3. STUDY OF CRO
19
25
28
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LIST OF EXPERIMENTS
31
35
40
45
50
55
7. FET CHARACTERISTICS
59
8. h-PARAMETERS OF CE CONFIGURATION
63
69
75
80
84
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1.1. RESISTOR
A Resistor is a passive two-terminal electrical component that implements electrical
resistance as a circuit element. The current through a resistor is in direct proportion to the
voltage across the resistor's terminals. This relationship is represented by Ohm's law:
Where I is the current through the conductor in units of amperes, V is the potential
difference measured across the conductor in units of volts, and R is the resistance of the
conductor in units of ohms.
The ratio of the voltage applied across a resistor's terminals to the intensity of current in
the circuit is called its resistance, and this can be assumed to be a constant (independent
of the voltage) for ordinary resistors working within their ratings.
Black
0
Brown
1
Red
2
Blue
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Violet
7
Grey
8
White
9
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multiplier, the fifth band represents the tolerance, and the sixth band represents the
temperature coefficient.
Definitions of color bands: The color of the multiplier band represents multiples of 10,
or the placement of the decimal point. For example: ORANGE (3) represents 10 to the
third power or 1,000. The tolerance indicates, in a percentage, how much a resistor can
vary above or below its value. A gold band stands for +/- 5%, a silver band stands for +/10%, and if there is no fourth band it is assumed to be +/- 20%. For example: A 100-Ohm
5% resistor can vary from 95 to 105 Ohms and still be considered within the
manufactured tolerance. The temperature coefficient band specifies the maximum change
in resistance with change in temperature, measured in parts per million per degree
Centigrade (ppm/C).
Example (from chart): Lets look at the first resistor on the chart. In this case, the first
color band is BROWN. Following the line down the chart you can see that BROWN
represents the number 1. This becomes our first significant digit. Next, look at the second
band and you will see it is BLACK. Once again, follow the line down to the bar scale; it
holds a value of 0, our second significant digit. Next, look at the third band, the
multiplier, and you will see it is ORANGE. Once again, follow the line down to the bar
scale; it holds a value of 3. This represents 3 multiples of 10 or 1000. With this
information, the resistance is determined by taking the first two digits, 1 and 0 (10) and
multiplying by 1,000. Example: 10 X 1000 = 10,000 or 10,000 Ohms. Using the chart,
the fourth band (GOLD), indicates that this resistor has a tolerance of +/- 5%. Thus, the
permissible range is: 10,000 X .05 = +/- 500 Ohms, or 9,500 to 10,500 Ohms.
1.3. TYPES OF RESISTORS
1. Carbon Resistors
2. Wire wound Resistors
Carbon Resistors
There are many types of resistors, both fixed and variable. The most common type for
electronics use is the carbon resistor. They are made in different physical sizes with
power dissipation limits commonly from 1 watt down to 1/8 watt. The resistance value
and tolerance can be determined from the standard resistor color code.
A variation on the color code is used for precision resistors which may have five colored
bands. In that case the first three bands indicate the first three digits of the resistance
value and the fourth band indicates the number of zeros. In the five band code the fifth
band is gold for 1% resistors and silver for 2%.
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1.4. CAPACITOR
A capacitor (originally known as a condenser) is a passive two-terminal electrical
component used to store energy electro statically in an electric field. By contrast,
batteries store energy via chemical reactions. The forms of practical capacitors vary
widely, but all contain at least two electrical conductors separated by a dielectric
(insulator); for example, one common construction consists of metal foils separated by a
thin layer of insulating film. Capacitors are widely used as parts of electrical circuits in
many common electrical devices.
When there is a potential difference (voltage) across the conductors, a static electric field
develops across the dielectric, causing positive charge to collect on one plate and
negative charge on the other plate. Energy is stored in the electrostatic field. An ideal
capacitor is characterized by a single constant value, capacitance. This is the ratio of the
electric charge on each conductor to the potential difference between them. The SI unit of
capacitance is the farad, which is equal to one coulomb per volt.
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Ceramic disk capacitors have many marking schemes. Capacitance, tolerance, working
voltage and temperature coefficient may be found. Capacitance values are given as
number without any identification as to units. (uF, nF, pF) Whole numbers usually
indicate pF and decimal numbers such as 0.1 or 0.47 are microfarads. Odd looking
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numbers such as 473 is the previously explained system and means 47 nF.
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ESR Equivalent series resistance: Electrolytic capacitors are often used in circuits
where current levels are relatively high. Also under some circumstances and current
sourced from them needs to have low source impedance, for example when the
capacitor is being used in a power supply circuit as a reservoir capacitor. Under these
conditions it is necessary to consult the manufacturers datasheets to discover whether
the electrolytic capacitor chosen will meet the requirements for the circuit. If the ESR
is high, then it will not be able to deliver the required amount of current in the circuit,
without a voltage drop resulting from the ESR which will be seen as a source
resistance.
Frequency response: One of the problems with electrolytic capacitors is that they
have a limited frequency response. It is found that their ESR rises with frequency and
this generally limits their use to frequencies below about 100 kHz. This is particularly
true for large capacitors, and even the smaller electrolytic capacitors should not be
relied upon at high frequencies. To gain exact details it is necessary to consult the
manufacturers data for a given part.
Leakage: Although electrolytic capacitors have much higher levels of capacitance
for a given volume than most other capacitor technologies, they can also have a
higher level of leakage. This is not a problem for most applications, such as when
they are used in power supplies. However under some circumstances they are not
suitable. For example they should not be used around the input circuitry of an
operational amplifier. Here even a small amount of leakage can cause problems
because of the high input impedance levels of the op-amp. It is also worth noting that
the levels of leakage are considerably higher in the reverse direction.
Ripple current: When using electrolytic capacitors in high current applications
such as the reservoir capacitor of a power supply, it is necessary to consider the ripple
current it is likely to experience. Capacitors have a maximum ripple current they can
supply. Above this they can become too hot which will reduce their life. In extreme
cases it can cause the capacitor to fail. Accordingly it is necessary to calculate the
expected ripple current and check that it is within the manufacturers maximum
ratings.
Tolerance: Electrolytic capacitors have a very wide tolerance. Typically this may be
-50% + 100%. This is not normally a problem in applications such as decoupling or
power supply smoothing, etc. However they should not be used in circuits where the
exact value is of importance.
Polarization: Unlike many other types of capacitor, electrolytic capacitors are
polarized and must be connected within a circuit so that they only see a voltage across
them in a particular way.
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1000uH (1millihenry), 2%
6.8 uH, 5%
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2. CIRCUIT SYMBOLS
WIRES AND CONNECTIONS
S.NO
.
1
COMPONENT
NAME
WIRE
CIRCUIT SYMBOL
WIRES JOINED
WIRES NOT
JOINED
FUNCTION
To pass current very easily
from one part of a circuit to
another.
A 'blob' should be drawn
where wires are connected
(joined), but it is sometimes
omitted. Wires connected at
'crossroads' should be
staggered slightly to form
two T-junctions, as shown on
the right.
In complex diagrams it is
often necessary to draw
wires crossing even though
they are not connected. I
prefer the 'bridge' symbol
shown on the right because
the simple crossing on the
left may be misread as a join
where you have forgotten to
add a 'blob'.
POWER SUPPLIES
S.NO
1.
COMPONENT
NAME
CELL
2.
BATTERY
CIRCUIT SYMBOL
FUNCTION
Supplies electrical energy.
The larger terminal (on the
left)
is
positive
(+).
A single cell is often called a
battery, but strictly a battery
is two or more cells joined
together
Supplies electrical energy. A
battery is more than one cell.
The larger terminal (on the
left) is positive (+).
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3.
DC SUPPLY
4.
AC SUPPLY
5.
FUSE
6.
TRANSFORMER
7.
EARTH(GROUND)
COMPONENT
NAME
LAMP(LIGHTING)
CIRCUIT SYMBOL
2.
LAMP(INDICATOR)
3.
FUNCTION
HEATER
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electrical energy to heat.
A transducer which converts
electrical energy to kinetic
energy (motion).
MOTOR
5.
A transducer which converts
electrical energy to sound.
BELL
6.
7.
BUZZER
INDUCTOR(SOLEN
OID,COIL)
Switches
S.NO
1.
COMPONENT
NAME
PUSH
SWITCH(PUSH TO
MAKE)
2.
PUSH TO BREAK
SWITCH
3.
ON/OFF
SWITCH(SPST)
4.
2 WAY
SWITCH(SPDT)
CIRCUIT SYMBOL
FUNCTION
A push switch allows current
to flow only when the button
is pressed. This is the switch
used to operate a doorbell.
This type of push switch is
normally closed (on), it is
open (off) only when the
button is pressed.
SPST = Single Pole, Single
Throw.
An on-off switch allows
current to flow only when it
is in the closed (on) position.
SPDT = Single Pole, Double
Throw. A 2-way changeover
switch directs the flow of
current to one of two routes
according to its position.
Some SPDT switches have a
central off position and are
described as 'on-off-on'.
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5.
DUAL ON-OFF
SWITCH(DPST)
6.
REVERSING
SWITCH(DPDT)
7.
RELAY
An electrically operated
switch, for example a 9V
battery circuit connected to
the coil can switch a 230V
AC mains circuit.
NO = Normally Open,
COM = Common,
NC = Normally Closed.
RESISTORS
S.NO
1.
2.
3.
COMPONENT
NAME
CIRCUIT SYMBOL
RESISTOR
FUNCTION
A resistor restricts the flow
of current, for example to
limit the current passing
through an LED. A resistor is
used with a capacitor in a
timing circuit.
This type of variable resistor
with 2 contacts (a rheostat) is
usually used to control
current. Examples include:
adjusting lamp brightness,
adjusting motor speed, and
adjusting the rate of flow of
charge into a capacitor in a
timing circuit.
Or
VARIABLE
RESISTOR(RHEOST
AT)
VARIABLE
RESISTOR(POTENTI
OMETER)
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used to control voltage. It
can be used like this as a
transducer
converting
position (angle of the control
spindle) to an electrical
signal
This type of variable resistor
(a preset) is operated with a
small screwdriver or similar
tool. It is designed to be set
when the circuit is made and
then left without further
adjustment. Presets are
cheaper than normal variable
resistors so they are often
used in projects to reduce the
cost
VARIABLE
RESISTOR(PRESET)
CAPACITORS
S.NO
1.
NAME OF THE
COMPONENT
CAPACITOR
CIRCUIT SYMBOL
2.
CAPACITOR
POLARISED
3.
VARIABLE
CAPACITOR
3.
FUNCTION OF THE
COMPONENT
A capacitor stores electric
charge. A capacitor is used
with a resistor in a timing
circuit. It can also be used
as a filter, to block DC
signals but pass AC
signals.
A capacitor stores electric
charge. This type must be
connected the correct way
round. A capacitor is used
with a resistor in a timing
circuit. It can also be used
as a filter, to block DC
signals but pass AC
signals.
A variable capacitor is
used in a radio tuner.
This type of variable
capacitor (a trimmer) is
operated with a small
screwdriver or similar tool.
It is designed to be set
when the circuit is made
TRIMMER
CAPACITOR
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and then left without
further adjustment
DIODES
S.NO
NAME OF THE
COMPONENT
CIRCUIT SYMBOL
1.
DIODE
2.
LED(LIGHT
EMITTING DIODE)
3.
ZENER DIODE
4.
PHOTODIODE
FUNCTION OF THE
COMPONENT
A device which only
allows current to flow in
one direction
A
transducer
which
converts electrical energy
to light.
A special diode which is
used to maintain a fixed
voltage across its terminals
A light-sensitive diode.
TRANSISTORS
S.NO
NAME OF THE
COMPONENT
CIRCUIT SYMBOL
FUNCTION OF THE
COMPONENT
5.
A transistor amplifies
current. It can be used with
other components to make
an amplifier or switching
circuit.
TRANSISTOR -NPN
6.
A transistor amplifies
current. It can be used with
other components to make
an amplifier or switching
circuit.
TRANSISTOR -PNP
7.
A light-sensitive
Transistor.
PHOTO
TRANSISTOR
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NAME OF THE
COMPONENT
CIRCUIT SYMBOL
1.
MICROPHONE
2.
FUNCTION OF THE
COMPONENT
A transducer which
converts sound to electrical
energy.
EARPHONE
A transducer which
converts electrical energy
to sound.
LOUD SPEAKER
A transducer which
converts electrical energy
to sound.
3.
4.
A transducer which
converts electrical energy
to sound.
An amplifier circuit with
one input. Really it is a
block diagram symbol
because it represents a
circuit rather than just one
component.
A device which is designed
to receive or transmit radio
signals. It is also known as
an antenna
PIEZO
TRANSDUCER
5.
AMPLIFIER(GENER
AL SYMBOL)
6.
AERIAL
(ANTENNA)
NAME OF THE
COMPONENT
CIRCUIT SYMBOL
1.
VOLTMETER
2.
FUNCTION OF THE
COMPONENT
A voltmeter is used to
measure voltage. The
Proper name for voltage is
'potential difference', but
most people prefer to say
voltage.
An ammeter is used to
measure current
AMMETER
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3.
A galvanometer is a very
sensitive meter which is
used to measure tiny
currents, usually 1mA or
less
An ohmmeter is used to
measure resistance. Most
multimeters have an
ohmmeter setting.
An oscilloscope is used to
display the shape of
electrical signals and it can
be used to measure their
voltage and time period.
GALVANOMETER
4.
OHMMETER
5.
OSCILLOSCOPE
NAME OF THE
COMPONENT
CIRCUIT SYMBOL
1.
LDR
2.
THERMISTOR
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FUNCTION OF THE
COMPONENT
A transducer which
converts brightness (light)
to resistance (an electrical
property). LDR = Light
Dependent Resistor
A transducer which
converts temperature (heat)
to resistance (an electrical
property).
ECE, MRCET
3. STUDY OF CRO
An oscilloscope is a test instrument which allows us to look at the 'shape' of electrical
signals by displaying a graph of voltage against time on its screen. It is like a voltmeter
with the valuable extra function of showing how the voltage varies with time. A graticule
with a 1cm grid enables us to take measurements of voltage and time from the screen.
The graph, usually called the trace, is drawn by a beam of electrons striking the phosphor
coating of the screen making it emit light, usually green or blue. This is similar to the
way a television picture is produced.
Oscilloscopes contain a vacuum tube with a cathode (negative electrode) at one end to
emit electrons and an anode (positive electrode) to accelerate them so they move rapidly
down the tube to the screen. This arrangement is called an electron gun. The tube also
contains electrodes to deflect the electron beam up/down and left/right.
The electrons are called cathode rays because they are emitted by the cathode and this
gives the oscilloscope its full name of cathode ray oscilloscope or CRO.
A dual trace oscilloscope can display two traces on the screen, allowing us to easily
compare the input and output of an amplifier for example. It is well worth paying the
modest extra cost to have this facility.
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BASIC OPERATION:
Y plates
electron gun
cathode
fluorescent screen
Electron beam
anode
X plates
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The following type of trace is observed on CRO after setting up, when there is no
input signal connected.
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The trace of an AC signal with the oscilloscope controls correctly set is as shown in
Figure 6.
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Time period =
1
Time period
1
Frequency
A) Voltage: Voltage is shown on the vertical y-axis and the scale is determined by
the Y AMPLIFIER (VOLTS/CM) control. Usually peak-peak voltage is measured
because it can be read correctly even if the position of 0V is not known. The
amplitude is half the peak-peak voltage.
Voltage = distance in cm volts/cm
B) Time period: Time is shown on the horizontal x-axis and the scale is determined by
the TIMEBASE (TIME/CM) control. The time period (often just called period) is the
time for one cycle of the signal. The frequency is the number of cycles per second,
frequency = 1/time period.
Time = distance in cm time/cm
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Square wave - The signal goes directly from high to low voltage.
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The duty cycle of a signal refers to the ratio of high voltage to low voltage time in a
square wave signal.
Sine wave - The signal curves like a sinusoid from high to low voltage.
Triangle wave - The signal goes from high to low voltage at a fixed rate.
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The frequency control of a function generator controls the rate at which output signal
oscillates. On some function generators, the frequency control is a combination of
different controls. One set of controls chooses the broad frequency range (order of
magnitude) and the other selects the precise frequency. This allows the function generator
to handle the enormous variation in frequency scale needed for signals.
How to use a function generator
After powering on the function generator, the output signal needs to be configured to the
desired shape. Typically, this means connecting the signal and ground leads to an
oscilloscope to check the controls. Adjust the function generator until the output signal is
correct, then attach the signal and ground leads from the function generator to the input
and ground of the device under test. For some applications, the negative lead of the
function generator should attach to a negative input of the device, but usually attaching to
ground is sufficient.
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Dual Supplies: Some electronic circuits require a power supply with positive and
negative outputs as well as zero volts (0V). This is called a 'dual supply' because it is
like two ordinary supplies connected together as shown in the diagram. Dual supplies
have three outputs, for example a 9V supply has +9V, 0V and -9V outputs.
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Strip Board:
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Stripboard has parallel strips of copper track on one side. The strips are 0.1" (2.54mm)
apart and there are holes every 0.1" (2.54mm). Stripboard requires no special preparation
other than cutting to size. It can be cut with a junior hacksaw, or simply snap it along the
lines of holes by putting it over the edge of a bench or table and pushing hard.
Printed Circuit Board: A printed circuit board, or PCB, is used to mechanically support
and electrically connect electronic components using conductive pathways, tracks or
traces etched from copper sheets laminated onto a non-conductive substrate. It is also
referred to as printed wiring board (PWB) or etched wiring board. A PCB populated with
electronic components is a printed circuit assembly (PCA), also known as a printed
circuit board assembly (PCBA).
Printed circuit boards have copper tracks connecting the holes where the
components are placed. They are designed specially for each circuit and make
construction very easy. However, producing the PCB requires special equipment so this
method is not recommended if you are a beginner unless the PCB is provided for you.
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EXPERIMENT NO -1
P-N JUNCTION DIODE CHARACTERISTICS
AIM: 1. To observe and draw the Forward and Reverse bias V-I Characteristics of a P-N
Junction diode.
2. To calculate static and dynamic resistance in forward and reverse Bias
Conditions.
APPARATUS:
1. P-N Diode IN4007
2. Regulated Power supply (0-30V)
3. Resistor 1K
4. Ammeter (0-20 mA)
5. Ammeter (0-200A)
6. Voltmeter (0-20V)
7. Bread board
8. Connecting wires
1No.
1No.
1No.
1No
1No.
2No.
THEORY:
A P-N junction diode conducts only in one direction. The V-I
characteristics of the diode are curve between voltage across the diode and current
flowing through the diode. When external voltage is zero, circuit is open and the potential
barrier does not allow the current to flow. Therefore, the circuit current is zero. When Ptype (Anode) is connected to +ve terminal and n- type (cathode) is connected to ve
terminal of the supply voltage is known as forward bias.
The potential barrier is reduced when diode is in the forward biased condition. At some
forward voltage, the potential barrier altogether eliminated and current starts flowing
through the diode and also in the circuit. Then diode is said to be in ON state. The current
increases with increasing forward voltage.
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is
connected ve terminal of the supply voltage is known as reverse bias and the potential
barrier across the junction increases. Therefore, the junction resistance becomes very
high and a very small current (reverse saturation current) flows in the circuit. Then diode
is said to be in OFF state. The reverse bias current is due to minority charge carriers.
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CIRCUIT DIAGRAM:
A) Forward bias:
B) Reverse Bias:
EXPECTED GRAPH:
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OBSERVATIONS:
A) FORWARD BIAS:
S.NO Applied
Voltage(V)
Forward
Voltage(Vf)
Forward
Current(If(mA))
Reverse
Voltage(VR)
Reverse
Current(IR(A))
B) REVERSE BIAS:
S.NO Applied
Voltage(V)
Calculations:
Calculation of Static and Dynamic Resistance for a given diode.
In forward bias condition:
Static Resistance ,
Dynamic Resistance,
Rs = Vf/If
=
RD = Vf/ If =
Rs
RD
=
=
VR/IR
=
VR/ IR =
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PROCEDURE:
A) FORWARD BIAS:
1. Connections are made as per the circuit diagram.
2. For forward bias, the RPS +ve is connected to the anode of the diode and
RPS ve is connected to the cathode of the diode
3. Switch on the power supply and increase the input voltage (supply voltage) in
steps of 0.1V
4. Note down the corresponding current flowing through the diode and voltage
across the diode for each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage (Vf) on X-axis and current (If) on Y-axis.
B) REVERSE BIAS:
1. Connections are made as per the circuit diagram
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and
RPS ve is connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in
steps of 1V.
4. Note down the corresponding current flowing through the diode voltage across
the diode for each and every step of the input voltage.
5. The readings of voltage and current are tabulated
6. Graph is plotted between voltage(VR) on X-axis and current (IR) on Y-axis.
PRECAUTIONS:
1. All the connections should be correct.
2. Parallax error should be avoided while taking the readings from the Analog meters.
RESULT: The static and dynamic resistances of the PN Junction Diode are calculated
from the forward and reverse bias Characteristics.
VIVA QUESTIONS:
1. Define depletion region of a diode.
2. What is meant by transition & space charge capacitance of a diode?
3. Is the V-I relationship of a diode Linear or Exponential?
4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes.
5. What are the applications of a p-n diode?
6. Draw the ideal characteristics of P-N junction diode.
7. What is the diode equation?
8. What is PIV?
9. What is the break down voltage?
10. What is the effect of temperature on PN junction diodes?
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EXPERIMENT NO -2
ZENER DIODE CHARACTERISTICS AND ZENER DIODE AS A
VOLTAGE REGULATOR
AIM:
a) To observe and draw the static characteristics of a zener diode
b) To find the voltage regulation of a given zener diode
APPARATUS:
1. Zener diode
2. Regulated Power Supply (0-30v)
3. Voltmeter (0-20v)
4. Ammeter (0-20mA)
5. Resistor (1K ohm)
6. Bread Board
7. Connecting wires
- 1No.
- 1No.
- 1No.
- 1No.
THEORY:
A zener diode is heavily doped p-n junction diode, specially made to operate
in the break down region. A p-n junction diode normally does not conduct when reverse
biased. But if the reverse bias is increased, at a particular voltage it starts conducting
heavily. This voltage is called Break down Voltage. High current through the diode can
permanently damage the device
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ECE, MRCET
CIRCUIT DIAGRAM
A) STATIC CHARACTERISTICS :
B) REGULATION CHARACTERISTICS:
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ECE, MRCET
EXPECTED GRAPH:
OBSERVATIONS:
A) Static characteristics:
S.NO Applied
Voltage(V)
Forward
Voltage(Vf)
Forward
Current(If(mA))
B) Regulation Characteristics:
S.N0
Applied
Voltage,Vs
VNL
(VOLTS)
VFL
(VOLTS)
RL
(K)
%
REGULATION
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ECE, MRCET
PROCEDURE:
A) Static characteristics:
1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The Forward current (lf), and the forward voltage (Vf.) are observed and then
noted in the tabular form.
4. A graph is plotted between Forward current (lf) on X-axis and the forward voltage
(Vf) on Y-axis.
B) Regulation characteristics:
1. Connections are made as per the circuit diagram
2. The load is placed in full load condition and the zener voltage (Vz), Zener current
(lz), load current (IL) are measured.
3. The above step is repeated by decreasing the value of the load in steps.
4. All the readings are tabulated.
5. The percentage regulation is calculated using the below formula
6. The voltage regulation of any device is usually expressed as percentage regulation.
CALCULATIONS:
The percentage regulation is given by the formula
% Regulation = (VNL-VFL) /VFLX100
VNL=Voltage across the diode, when no load is connected.
VFL=Voltage across the diode, when load is connected.
PRECAUTIONS:
1. The terminals of the zener diode should be properly identified
2. While determined the load regulation, load should not be immediately shorted.
3. Should be ensured that the applied voltages & currents do not exceed the ratings of
the diode.
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ECE, MRCET
VIVAQUESTIONS:
1. What type of temp coefficient does the zener diode have?
2. If the impurity concentration is increased, how does the depletion width get
effected?
3. Does the dynamic impendence of a zener diode vary?
4. Explain briefly about avalanche and zener breakdowns.
5. Draw the zener equivalent circuit.
6. Differentiate between line regulation & load regulation.
7. Which region zener diode can be used as a regulator?
8. How the breakdown voltage of a particular diode can be controlled?
9. What type of temperature coefficient does the Avalanche breakdown has?
10. By what type of charge carriers the current flows in zener and avalanche breakdown
diodes?
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ECE, MRCET
EXPERIMENT NO -3
TRANSITOR COMMON -BASE CONFIGURATION
CHARACTERISTICS
AIM: 1.To observe and draw the input and output characteristics of a transistor
connected in common base configuration.
2. To find of the given transistor and also its input and output Resistances.
APPARATUS:
Transistor, BC107
Regulated power supply (0-30V)
Voltmeter (0-20V)
Ammeters (0-10mA)
Resistor, 1K
Bread board
Connecting wires
-1No.
-1No.
- 2No.
-2No.
-2No
THEORY:
A transistor is a three terminal active device. The terminals are emitter, base,
collector. In CB configuration, the base is common to both input (emitter) and output
(collector). For normal operation, the E-B junction is forward biased and C-B junction
is reverse biased. In CB configuration, IE is +ve, IC is ve and IB is ve. So,
VEB = F1 (VCB, IE) and
IC = F2 (VEB,IB)
With an increasing the reverse collector voltage, the space-charge width at the output
junction increases and the effective base width W decreases. This phenomenon is
known as Early effect. Then, there will be less chance for recombination within the
base region. With increase of charge gradient with in the base region, the current of
minority carriers injected across the emitter junction increases.
The current amplification factor of CB configuration is given by,
= IC/ IE
Input Resistance, ri
= VBE /IE
at Constant VCB
Output Rsistance, ro
= VCB /IC
at Constant IE
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ECE, MRCET
CIRCUIT DIAGRAM:
EXPECTED GRAPHS:
A) INPUT CHARACTERISTICS
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ECE, MRCET
B) OUTPUTCHARACTERISTICS
OBSERVATIONS:
A) INPUT CHARACTERISTICS:
VEE(V)
VCB=1V
VEB(V)
VCB= = 2V
IE(mA)
VEB(V)
VCB= 4V
IE(mA)
VEB(V)
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IE(mA)
ECE, MRCET
B) OUTPUT CHARACTERISTICS:
Vcc(V)
IE=10mA
VCB(V)
IE=20mA
IC(mA)
VCB(V)
IE=30mA
IC(mA)
VCB(V)
IC(mA)
PROCEDURE:
A) INPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the input characteristics, the output voltage VCE is kept constant at 0V
and for different values of VEE ,note down the values of IE and VBE
3. Repeat the above step keeping VCB at 2V, 4V, and 6V and all the readings are
tabulated.
4. A graph is drawn between VEB and IE for constant VCB.
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ECE, MRCET
B) OUTPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the output characteristics, the input IE is kept constant at 0.5mA and for
different values of VCC, note down the values of IC and VCB.
3. Repeat the above step for the values of IE at 1mA, 5mA and all the readings are
tabulated.
4. A graph is drawn between VCB and Ic for constant IE
PRECAUTIONS:
1. The supply voltages should not exceed the rating of the transistor.
2. Meters should be connected properly according to their polarities.
RESULT: The Current gain of the Transistor in CB is ______ , the input Resistance is
_____ and the output Resistance is ______.
VIVA QUESTIONS:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
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ECE, MRCET
EXPERIMENT NO -4
TRANSITOR COMMON - EMITTER CONFIGURATION
CHARACTERISTICS
AIM:
1. To draw the input and output characteristics of transistor connected in
CE configuration
2. To find of the given transistor and also its input and output Resistances
APPARATUS:
Transistor, BC107
Regulated power supply (0-30V)
Voltmeter (0-20V)
Ammeters (0-20mA)
Ammeters (0-200A)
Resistor, 100
Resistor, 1K
Bread board
Connecting wires
-1No.
-1No.
- 2No.
-1No.
-1No.
-1No
-1No.
THEORY:
In common emitter configuration, input voltage is applied between base and emitter
terminals and out put is taken across the collector and emitter terminals. Therefore the
emitter terminal is common to both input and output.
The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. As
compared to CB arrangement IB increases less rapidly with VBE. Therefore input
resistance of CE circuit is higher than that of CB circuit.
The output characteristics are drawn between Ic and VCE at constant
IB. the collector current varies with VCE upto few volts only. After this the collector
current becomes almost constant, and independent of VCE. The value of VCE up to which
the collector current changes with V CE is known as Knee voltage. The transistor always
operated in the region above Knee voltage, IC is always constant and is approximately
equal to IB.The current amplification factor of CE configuration is given by
= IC/IB
Input Resistance, ri
Output Rsistance, ro
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ECE, MRCET
CIRCUIT DIAGRAM:
EXPECTED GRAPHS:
A) INPUT CHARACTERISTICS:
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ECE, MRCET
B) OUTPUT CHARACTERSITICS:
OBSERVATIONS:
A) INPUT CHARACTERISTICS:
VCE = 1V
VBB
VBE(V)
VCE = 2V
IB(A)
VBE(V)
IB(A)
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VCE = 4V
VBE(V)
IB(A)
ECE, MRCET
B) OUTPUT CHARACTERISTICS:
IB = 50 A
IB = 75 A
IB = 100 A
S.NO
VCE(V)
IC(mA)
VCE(V)
IC(mA)
VCE(V)
IC(mA)
PROCEDURE:
A) INPUT CHARACTERISTICS
1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage VCE is kept constant at 1V
and for different values of VBB , note down the values of IB and VBE
3. Repeat the above step by keeping VCE at 2V and 4V and tabulate all the readings.
4. plot the graph between VBE and IB for constant VCE
B) OUTPUT CHARACTERISTICS:
2. Connect the circuit as per the circuit diagram
3. for plotting the output characteristics the input current IB is kept constant at
50A and for different values of VCC note down the values of IC and VCE
4. Repeat the above step by keeping IB at 75 A and 100 A and tabulate the all the
readings
5. plot the graph between VCE and IC for constant IB
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ECE, MRCET
PRECAUTIONS:
1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
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ECE, MRCET
EXPERIMENT NO -5
HALF -WAVE RECTIFIER WITH AND WITHOUT FILTER
AIM: To examine the input and output waveforms of half wave Rectifier and also
calculate its load regulation and ripple factor.
1. with Filter
2. without Filter
APPARATUS:
Digital multimetersMultimeter
Transformer (6V-0-6V)
Diode, 1N4007
Capacitor 100f/470 f
Decade Resistance Box
Breadboard
CRO and CRO probes
Connecting wires
1No.
1No.
1No.
1No.
1No.
THEORY:
In Half Wave Rectification, When AC supply is applied at the input, only Positive Half
Cycle appears across the load whereas, the negative Half Cycle is suppressed. How this
can be explained as follows:
During positive half-cycle of the input voltage, the diode D1 is in forward bias
and conducts through the load resistor RL. Hence the current produces an output voltage
across the load resistor RL, which has the same shape as the +ve half cycle of the input
voltage.
During the negative half-cycle of the input voltage, the diode is reverse biased
and there is no current through the circuit. i.e., the voltage across RL is zero. The net
result is that only the +ve half cycle of the input voltage appears across the load. The
average value of the half wave rectified o/p voltage is the value measured on dc
voltmeter.
For practical circuits, transformer coupling is usually provided for two reasons.
1. The voltage can be stepped-up or stepped-down, as needed.
2. The ac source is electrically isolated from the rectifier. Thus preventing
shock hazards in the secondary circuit.
The efficiency of the Half Wave Rectifier is 40.6%
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CIRCUIT DIAGRAM:
A) Half wave Rectifier without filter:
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Half
wave
Rectifier
EXPECTED WAVEFORMS:
A) INPUT WAVEFORM
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with
ECE, MRCET
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Connect the primary side of the transformer to ac mains and the secondary side to the
rectifier input.
3.By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage
at the output of the rectifier.
4. Find the theoretical of dc voltage by using the formula,
Vdc=Vm/
Where, Vm=2Vrms, (Vrms=output ac voltage.)
5. The Ripple factor is calculated by using the formula
r = ac output voltage/dc output voltage.
REGULATION CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. By increasing the value of the rheostat, the voltage across the load and current
flowing through the load are measured.
3. The reading is tabulated.
4. From the value of no-load voltages, the %regulation is calculated using the
formula,
%Regulation
= [(VNL-VFL) /VFL]*100
PRECAUTIONS:
1. The primary and secondary side of the transformer should be carefully identified
2. The polarities of all the diodes should be carefully identified.
3. While determining the % regulation, first Full load should be applied and then it
should be decremented in steps.
RESULT: The ripple factors for Half wave Rectifier with and without load and the load
regulation has been calculated.
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ECE, MRCET
VIVA QUESTIONS:
1. What is the PIV of Half wave rectifier?
2. What is the efficiency of half wave rectifier?
3. What is the rectifier?
4. What is the difference between the half wave rectifier and full wave Rectifier?
5. What is the o/p frequency of Bridge Rectifier?
6. What are the ripples?
7. What is the function of the filters?
8. What is TUF?
9. What is the average value of o/p voltage for HWR?
10. What is the peak factor?
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ECE, MRCET
EXPERIMENT NO -6
FULL-WAVE RECTIFIER WITH AND WITHOUT FILTER
AIM: To examine the input and output waveforms of Full Wave Rectifier and also
calculate its load regulation and ripple factor.
1. with Filter
2. without Filter
APPARATUS:
Digital multimetersMultimeter
- 1No.
Transformer (6V-0-6V)
Diode, 1N4007
Capacitor 100f/470 f
Decade Resistance Box
Breadboard
CRO and CRO probes
Connecting wires
- 1No.
- 2No.
- 1No.
- 1No.
THEORY:
The circuit of a center-tapped full wave rectifier uses two diodes D1&D2.
During positive half cycle of secondary voltage (input voltage), the diode D1 is forward
biased and D2is reverse biased. So the diode D1 conducts and current flows through
load resistor RL.
During negative half cycle, diode D2 becomes forward biased and D1 reverse
biased. Now, D2 conducts and current flows through the load resistor R L in the same
direction. There is a continuous current flow through the load resistor RL, during both
the half cycles and will get unidirectional current as show in the model graph. The
difference between full wave and half wave rectification is that a full wave rectifier
allows unidirectional (one way) current to the load during the entire 360 degrees of the
input signal and half-wave rectifier allows this only during one half cycle (180 degree).
THEORITICAL CALCULATIONS:
Vrms = Vm/ 2
Vm =Vrms2
Vdc=2Vm/
(i)Without filter:
Ripple factor, r = (Vrms/ Vdc )2 -1 = 0.812
(ii)With filter:
Ripple factor, r = 1/ (43 f C RL)
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CIRCUIT DIAGRAM:
A) FULL WAVE RECTIFIER WITHOUT FILTER:
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EXPECTED WAVEFORMS:
A) INPUT WAVEFORM
PROCEDURE:
1.
Connections are made as per the circuit diagram.
2. Connect the ac mains to the primary side of the transformer and the secondary
side to the rectifier.
3. Measure the ac voltage at the input side of the rectifier.
4. Measure both ac and dc voltages at the output side the rectifier.
5. Find the theoretical value of the dc voltage by using the formula Vdc=2Vm/
6. Connect the filter capacitor across the load resistor and measure the values of
Vac and Vdc at the output.
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7.
8.
ECE, MRCET
The theoretical values of Ripple factors with and without capacitor are
calculated.
From the values of Vac and Vdc practical values of Ripple factors are
calculated. The practical values are compared with theoretical values.
PRECAUTIONS:
1. The primary and secondary side of the transformer should be carefully identified.
2. The polarities of all the diodes should be carefully identified.
RESULT: The ripple factors for Full wave Rectifier with and without load and the load
regulation has been calculated.
VIVA QUESTIONS:
1. Define regulation of the full wave rectifier?
2. Define peak inverse voltage (PIV)? And write its value for Full-wave rectifier?
3. If one of the diode is changed in its polarities what wave form would you get?
4. Does the process of rectification alter the frequency of the waveform?
5. What is ripple factor of the Full-wave rectifier?
6. What is the necessity of the transformer in the rectifier circuit?
7. What are the applications of a rectifier?
8. What is meant by ripple and define Ripple factor?
9. Explain how capacitor helps to improve the ripple factor?
10. Can a rectifier made in INDIA (V=230v, f=50Hz) be used in USA (V=110v,
f=60Hz)?
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EXPERIMENT NO -7.
FET CHARACTERISTICS
AIM: a). To draw the drain and transfer characteristics of a given FET.
b). To find the drain resistance (rd) amplification factor () and
TransConductance (gm) of the given FET.
APPARATUS:
FET BFW11
Regulated power supply (0-30V)
Voltmeter (0-20V)
Ammeter (0-20mA)
Bread board
Connecting wires
-1No.
-1No.
-2No.
-1No.
THEORY:
A FET is a three terminal device, in which current conduction is by majority carriers
only. The flow of current is controlled by means of an Electric field. The three terminals
of FET are Gate, Drain and Source. It is having the characteristics of high input
impedance and less noise, the Gate to Source junction of the FETs always reverse
biased. In response to small applied voltage from drain to source, the n-type bar acts as
sample resistor, and the drain current increases linearly with VDS. With increase in ID the
ohmic voltage drop between the source and the channel region reverse biases the
junction and the conducting position of the channel begins to remain constant. The VDS
at this instant is called pinch of voltage. If the gate to source voltage (V GS) is applied
in the direction to provide additional reverse bias, the pinch off voltage ill is decreased.
In amplifier application, the FET is always used in the region beyond the pinch-off.
FET parameters:
AC Drain Resistance, rd = VDS / I D at constant VGS
Tran conductance,
gm =
ID /VGS at constant VDS
Amplification,
= VDS/VGS at constant ID
Relation between above parameters
= rd * gm
The drain current is given by
.
ID =IDSS (1-VGS/VP) 2
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CIRCUIT DIAGRAM:
EXPECTED GRAPH:
A) DRAIN CHARCTERISTICS:
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ECE, MRCET
B) TRANSFER CHARACTERISTICS:
OBSERVATIONS:
A) DRAIN CHARACTERISTICS:
S.NO
VGS = 0V
VDS(V)
ID(mA)
VGS = 0.1V
VDS(V)
ID(mA)
VGS = 0.2V
VDS(V)
ID(mA)
B) TRANSFER CHARACTERISTICS:
S.NO
VDS =0.5V
VGS (V)
VDS = 1V
ID(mA)
VGS (V)
VDS = 1.5V
ID(mA)
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VGS (V)
ID(mA)
ECE, MRCET
PROCEDURE:
1.
2.
3.
4.
5.
6.
7.
8.
9.
VIVA QUESTIONS:
1.
2.
3.
4.
5.
6.
7.
8.
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ECE, MRCET
EXPERIMENT NO -8
h-PARAMETERS OF CE CONFIGURATION
AIM: To calculate the h-parameters of the transistor in CE configuration.
APPRATUS:
Transistor BC107
Resistors 100 K 100
Ammeter (0-200A)
Ammeter(0-200mA
Voltmeter (0-20V)
Regulated Power Supply (0-30V)
Breadboard
- 1No.
- 1No.Each
- 1No.
-1No.
- 2Nos
- 2Nos
THEORY:
A) INPUT CHARACTERISTICS:
The two sets of characteristics are necessary to describe the behaviour of the CE
configuration, in which one for input or base emitter circuit and other for the output or
collector emitter circuit. In input characteristics the emitter base junction forward biased
by a very small voltage VBB where as collector base junction reverse biased by a very
large voltage VCC. The input characteristics are a plot of input current IB Versuss the input
voltage VBE for a range of values of output voltage VCE . The following important points
can be observed from these characteristics curves.
1. Input resistance is high as IB increases less rapidly with VBE
2. The input resistance of the transistor is the ratio of change in base emitter voltage
VBE to change in base current IB at constant collector emitter voltage (VCE) i.e...
Input resistance or input impedance hie = VBE / IB at VCE constant.
B) OUTPUT CHARACTERISTICS:
A set of output characteristics or collector characteristics are a plot of out put current IC
VS output voltage VCE for a range of values of input current IB .The following important
points can be observed from these characteristics curves.
1. The transistor always operates in the active region. i.e. the collector current
IC increases with VCE very slowly. For low values of the VCE the IC increases rapidly
with a small increase in VCE .The transistor is said to be working in saturation region.
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EXPECTED GRAPH:
A) INPUT CHARACTERSITICS: i) calculation of hie
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OUPUT CHARACTERISITCS:
i)calculation of hfe
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ECE, MRCET
OBSERVATIONS:
A) Input Characteristics
VCE=0V
S.NO
VCE=6V
IB(A)
VBE(V)
IB(A)
VBE(V)
B) Output Characteristics:
IB = 20 A
S.NO
VCE
(V)
IB = 40 A
IC(mA)
VCE
(V)
IB = 60 A
IC(mA)
VCE
(V)
IC(mA)
PROCEDURE:
1. Connect a transistor in CE configuration circuit for plotting its input and output
characteristics.
2. Take a set of readings for the variations in IB with VBE at different fixed values of
output voltage VCE .
3. Plot the input characteristics of CE configuration from the above readings.
4. From the graph calculate the input resistance hie and reverse transfer ratio hre by
taking the slopes of the curves.
5. Take the family of readings for the variations of IC with VCE at different values of
fixed IB.
6. Plot the output Characteristics from the above readings.
7. From the graphs calculate hfe and hoe by taking the slope of the curves.
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EXPERIMENT NO -9
FREQUENCY RESPONSE OF CE AMPLIFIER
AIM:
APPARATUS:
Transistor BC107
Regulated power Supply (0-30V)
Function Generator
CRO
Resistors [33K, 3.3K, 330,
1.5K, 1K, 2.2K, 4.7K]
Capacitors, 10F
100F
Bread Board
Connecting Wires
-1No.
-1No.
-1No.
-1No.
-1No.Each
-2No
-1No.
THEORY:
The CE amplifier provides high gain &wide frequency response. The emitter
lead is common to both input & output circuits and is grounded. The emitter-base
circuit is forward biased. The collector current is controlled by the base current rather
than emitter current. When a transistor is biased in active region it acts like an amplifier.
The input signal is applied to base terminal of the transistor and amplifier output is
taken across collector terminal. A very small change in base current produces a much
larger change in collector current. When positive half-cycle is fed to the input circuit, it
opposes the forward bias of the circuit which causes the collector current to decrease; it
decreases the voltage more negative. Thus when input cycle varies through a negative
half-cycle, increases the forward bias of the circuit, which causes the collector current
to increases thus the output signal is common emitter amplifier is in out of phase with
the input signal. An amplified output signal is obtained when this fluctuating collector
current flows through a collector resistor,Rc.
The capacitor across the collector resistor Rc will act as a bypass capacitor. This
will improve high frequency response of amplifier.
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CIRCUIT DIAGRAM:
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FREQUENCY RESPONSE
Bandwidth=f2-f1 Hz
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OBSERVATIONS:
FREQUENCY RESPONSE:
Vi=40mv
Frequency in HZ
OUTPUT
GAIN IN
VOLTAGE(Vo)
dB=20log10(Vo/Vi)
PROCEDURE:
1. Connect the circuit as shown in circuit diagram
2. Apply the input of 20mV peak-to-peak and 1 KHz frequency using Function
Generator
3. Measure the Output Voltage Vo (p-p) for various load resistors.
4. Tabulate the readings in the tabular form.
5. The voltage gain can be calculated by using the expression , Av= (V0/Vi)
6. For plotting the frequency response the input voltage is kept Constant at 20mV
peak-to-peak and the frequency is varied from 100Hz to 1MHz Using function
generator
7. Note down the value of output voltage for each frequency.
8. All the readings are tabulated and voltage gain in dB is calculated by Using The
expression Av=20 log10 (V0/Vi)
9. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis On
Semi-log graph.
10.The band width of the amplifier is calculated from the graph Using the expression,
Bandwidth, BW=f2-f1
Where f1 lower cut-off frequency of CE amplifier, and
Where f2 upper cut-off frequency of CE amplifier
11. The bandwidth product of the amplifier is calculated using the Expression
Gain Bandwidth product=3-dBmidband gain X Bandwidth
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VIVA QUESTIONS:
1.
2.
3.
4.
5.
6.
7.
8.
9.
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EXPERIMENT NO -10
FREQUENCY RESPONSE OF CC AMPLIFIER
AIM:
APPARATUS:
Transistor BC 107
Regulated Power Supply (0-30V)
Function Generator
CRO
Resistors 33K, 3.3K, 330,
1.5K, 1K, 2.2K & 4.7K
Capacitors
10F
100F
-1No.
-1No.
-1No.
-1No.
-1No.Each
-2Nos
-1No.
Breadboard
Connecting wires
THEORY:
In common-collector amplifier the input is given at the base and the output is
taken at the emitter. In this amplifier, there is no phase inversion between input and
output. The input impedance of the CC amplifier is very high and output impedance is
low. The voltage gain is less than unity. Here the collector is at ac ground and the
capacitors used must have a negligible reactance at the frequency of operation.
This amplifier is used for impedance matching and as a buffer
amplifier. This circuit is also known as emitter follower.
The most common use of the emitter follower is as a circuit, which
performs the function of impedance transformation over a wide range of frequencies.
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CIRCUIT DIAGRAM:
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x-axis: frequency
y-axis: voltage
OBSERVATIONS:
A) Gain ,Vi=40mV
Load Resistance(K)
output
Gain, Av=V0/Vi
Voltage(Vo)
Gain
in
dB
Av=20log 10(V0/Vi)
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B) FREQUENCY RESPONSE,Vi=40mV
Frequency(Hz)
Output Voltage(Vo)
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. For calculating the voltage gain the input voltage of 20mV peak-to-peak
and 1 KHz frequency is applied and output voltage is taken for various
load resistors.
3. The readings are tabulated.
4. The voltage gain calculated by using the expression, Av=V0/Vi
5. For plotting the frequency response the input voltage is kept constant a
20mV peak-to- peak and the frequency is varied from 100Hzto 1MHz.
6. Note down the values of output voltage for each frequency.
7. The voltage gain in dB is calculated by using the expression,
Av=20log 10(V0/Vi)
8.A graph is drawn by taking frequency on X-axis and gain in dB on y-axis on
Semi-log graph sheet.
9. The Bandwidth of the amplifier is calculated from the graph using the
Expression,
Bandwidth BW=f2-f1
Where f1 is lower cut-off frequency of CE amplifier
f2 is upper cut-off frequency of CE amplifier
10. The gain Bandwidth product of the amplifier is calculated using the
Expression,
Gain -Bandwidth product=3-dB midband gain X Bandwidth
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PRECAUTIONS:
1. The input voltage must be kept constant while taking frequency response.
2. Proper biasing voltages should be applied.
VIVA QUESTIONS:
1. What are the applications of CC amplifier?
2. What is the voltage gain of CC amplifier?
3. What are the values of input and output impedances of the CC amplifier?
4. To which ground the collector terminal is connected in the circuit?
5. Identify the type of biasing used in the circuit?
6. Give the relation between , and .
7. Write the other name of CC amplifier?
8. What are the differences between CE,CB and CC?
9. When compared to CE, CC is not used for amplification. Justify your answer?
10. What is the phase relationship between input and output in CC?
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EXPERIMENT NO -11
FREQUENCY RESPONSE OF COMMON SOURCE FET
AMPLIFIER
AIM: 1. To obtain the frequency response of the common source FET
Amplifier
2. To find the Bandwidth.
APPRATUS:
N-channel FET (BFW11)
Resistors (6.8K, 1M, 1.5K)
Capacitors 0.1F,
47F
Regulated power Supply (0-30V)
Function generator
CRO
CRO probes
Bread board
Connecting wires
-1No.
-1No.Each
-2Nos
-1No.
-1No.
-1No.
-1No.
-1pair
THEORY:
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification (for example, for amplifying wireless (signals). The device can amplify
analog or digital signals. It can also switch DC or function as an oscillator. In the FET,
current flows along a semiconductor path called the channel. At one end of the channel,
there is an electrode called the source. At the other end of the channel, there is an
electrode called the drain. The physical diameter of the channel is fixed, but its effective
electrical diameter can be varied by the application of a voltage to a control electrode
called the gate. Field-effect transistors exist in two major classifications. These are
known as the junction FET (JFET) and the metal-oxide- semiconductor FET
(MOSFET). The junction FET has a channel consisting of N-type semiconductor (Nchannel) or P-type semiconductor (P-channel) material; the gate is made of the opposite
semiconductor type. In P-type material, electric charges are carried mainly in the form
of electron deficiencies called holes. In N-type material, the charge carriers are
primarily electrons. In a JFET, the junction is the boundary between the channel and the
gate. Normally, this P-N junction is reverse-biased (a DC voltage is applied to it) so that
no current flows between the channel and the gate. However, under some conditions
there is a small current through the junction during part of the input signal cycle. The
FET has some advantages and some disadvantages relative to the bipolar transistor.
Field-effect transistors are preferred for weak-signal work, for example in wireless,
communications and broadcast receivers. They are also preferred in circuits and systems
requiring high impedance. The FET is not, in general, used for high-power
amplification, such as is required in large wireless communications and broadcast
transmitters.
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Field-effect transistors are fabricated onto silicon integrated circuit (IC) chips. A single
IC can contain many thousands of FETs, along with other components such as resistors,
capacitors, and diodes.
A comman source amplifier FET amplifier has high input impedance and a moderate
voltage gain. Also, the input and output voltages are 180 degrees out of Phase.
CIRCUIT DIAGRAM:
EXPECTED GRAPH:
A) INPUT WAVEFORM
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B) OUTPUT WAVEFORM
OBSERVATIONS:
INPUT VOLTAGE (Vi) =20mA
S.NO
Output Voltage(Vo)
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PROCEDURE:
1. Connections are made as per the circuit diagram.
2. A signal of 1 KHz frequency and 20mV peak-to-peak is applied at the
Input of amplifier.
3. Output is taken at drain and gain is calculated by using the expression,
Av=V0/Vi
4. Voltage gain in dB is calculated by using the expression,
Av=20log 10(V0/Vi)
5. Repeat the above steps for various input voltages.
6. Plot Av in dB Versus Frequency
7. The Bandwidth of the amplifier is calculated from the graph using the
Expression,
Bandwidth BW=f2-f1
Where f1 is lower 3 dB frequency
f2 is upper 3 dB frequency
PRECAUTIONS:
1. All the connections should be tight.
2. Transistor terminals must be identified properly
RESULT: The 3-dB Bandwidth of the CS Amplifier is _____.
VIVA QUESTIONS:
1. What is the difference between FET and BJT?
2. FET is unipolar or bipolar?
3. Draw the symbol of FET?
4. What are the applications of FET?
5. FET is voltage controlled or current controlled?
6. Draw the equivalent circuit of common source FET amplifier?
7. What is the voltage gain of the FET amplifier?
8. What is the input impedance of FET amplifier?
9. What is the output impedance of FET amplifier?
10. What are the FET parameters?
11. What are the FET applications
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EXPERIMENT NO -12
SILICON-CONTROLLED RECTIFIER (SCR) CHARACTERISTICS
AIM: To draw the V-I Characteristics of SCR
APPARATUS: SCR (TYN616)
Regulated Power Supply (0-30V)
Resistors 10k, 1k
Ammeter (0-50) A
Voltmeter (0-10V)
Breadboard
Connecting Wires.
THEORY:
-1No.
-2No.
-1No.Each one
-1No.
-1No.
-1No.
It is a four layer semiconductor device being alternate of P-type and N-type silicon. It
consists of 3 junctions J1, J2, J3 the J1 and J3 operate in forward direction and J2 operates
in reverse direction and three terminals called anode A, cathode K , and a gate G. The
operation of SCR can be studied when the gate is open and when the gate is positive
with respect to cathode. When gate is open, no voltage is applied at the gate due to
reverse bias of the junction J2 no current flows through R2 and hence SCR is at cut off.
When anode voltage is increased J2 tends to breakdown. When the gate positive, with
respect to cathode J3 junction is forward biased and J2 is reverse biased .Electrons from
N-type material move across junction J3 towards gate while holes from P-type material
moves across junction J3 towards cathode. So gate current starts flowing, anode current
increase is in extremely small current junction J2 break down and SCR conducts
heavily.
SCR SYMBOL
When gate is open thee break over voltage is determined on the minimum
forward voltage at which SCR conducts heavily. Now most of the supply voltage
appears across the load resistance. The holding current is the maximum anode current
gate being open, when break over occurs.
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CIRCUIT DIAGRAM:
V-I CHARACTERISTICS:
OBSERVATION:
VAK(V)
IAK ( A)
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PROCEDURE:
1. Connections are made as per circuit diagram.
2. Keep the gate supply voltage at some constant value
3. Vary the anode to cathode supply voltage and note down the readings of voltmeter
and ammeter. Keep the gate voltage at standard value.
4. A graph is drawn between VAK and IAK.
5. From the graph note down the threshold voltage and Holding current values.
CALCULATIONS:
Threshold Voltage =
Holding Current =
RESULT: The V-I Characteristics of the SCR have been plotted.
VIVA QUESTIONS:
1. What the symbol of SCR?
2. In which state SCR turns of conducting state to blocking state?
3. What are the applications of SCR?
4. What is holding current?
5. What are the important types thyristors?
6. How many numbers of junctions are involved in SCR?
7. What is the function of gate in SCR?
8. When gate is open, what happens when anode voltage is increased?
9. What is the value of forward resistance offered by SCR?
10. What is the condition for making from conducting state to non conducting state?
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EXPERIMENT NO -13
UJT CHARACTERISTICS
AIM: To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off
Ratio ().
APPARATUS:
Regulated power supply (0-30V)
0-20V (DMM)
0-20mA (DMM)
Resistors 1Kohm
Resistor 470 ohm
Breadboard
Connecting wires
-2Nos
-2Nos
-1No.
-2Nos
-1No.
Circuit symbol
The UJT is biased with a positive voltage between the two bases. This causes a potential
drop along the length of the device. When the emitter voltage is driven approximately
one diode voltage above the voltage at the point where the P diffusion (emitter) is,
current will begin to flow from the emitter into the base region. Because the base region
is very lightly doped, the additional current (actually charges in the base region) causes
(conductivity modulation) which reduces the resistance of the portion of the base
between the emitter junction and the B2 terminal. This reduction in resistance means
that the emitter junction is more forward biased, and so even more current is injected.
Overall, the effect is a negative resistance at the emitter terminal. This is what makes
the UJT useful, especially in simple oscillator circuits. hen the emitter voltage reaches
Vp, the current starts o increase and the emitter voltage starts to decrease. This is
represented by negative slope of the characteristics which is referred to as the negative
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resistance region, beyond the valley point, RB1 reaches minimum value and this
region,VEB proportional to IE.
CIRCUIT DIAGRAM:
V-I CHARACTERISTICS:
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PROCEDURE:
1. Connection is made as per circuit diagram.
2. Output voltage is fixed at a constant level and by varying input voltage
corresponding emitter current values are noted down.
3. This procedure is repeated for different values of output voltages.
4. All the readings are tabulated and Intrinsic Stand-Off ratio is calculated using
= (Vp-VD) / VBB
5. A graph is plotted between VEE and IE for different values of VBE.
CALCULATIONS:
VP = VBB + VD
= (VP-VD) / VBB
= ( 1 + 2 + 3 ) / 3
OBSEVATIONS:
VBB=10
VEB(V)
VBB=5
IE(mA)
VBB=2
VEB(V)
IE(mA)
VEB(V)
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IE(mA)