7.

1
VGS = VDD = 1.8 V
VDS > VGS VT H (in order for M1 to operate in saturation)
VDS = VDD ID (1 k)
W
1
2
(VGS VT H ) (1 k)
= VDD n Cox
2
L
> VGS VT H
W
< 2.04
L

7.3
VGS = VDD ID (100 )
VDS = VDD ID (1 k + 100 )

> VGS VT H (in order for M1 to operate in saturation)

VDD ID (1 k + 100 ) > VDD ID (100 ) VT H
ID (1 k + 100 ) < ID (100 ) + VT H
ID (1 k) < VT H
ID < 400 A
Since gm increases with ID , we should pick the maximum ID to determine the maximum transconductance that M1 can provide.
ID,max = 400 A
2ID,max
gm,max =
VGS VT H
2ID,max
=
VDD ID,max (100 ) VT H
= 0.588 mS

7.5
ID1 = 0.5 mA
VGS = VT H +

2ID1
n Cox W
L

= 0.612 V
1
ID1 R2
VGS =
10
R2 = 12.243 k
11
1
VGS = VDD ID1 R1 ID1 RS
10
10
R1 = 21.557 k

7.6
ID = 1 mA
2ID
1
gm =
=
VGS VT H
100
VGS = 0.6 V
VGS = VDD ID RD
RD = 1.2 k

7.8 First, lets analyze the circuit excluding RP .

20 k
VDD = 1.2 V
10 k + 20 k
= VG ID RS = VDS = VDD ID (1 k + 200 )

VG =
VGS

ID = 600 A
VGS = 1.08 V
2ID
W
=
= 12.9758 13
L
n Cox (VGS VT H )2
Now, lets analyze the circuit with RP .
VDD
10 k

ID + IRP

1 k

M1

20 k

RS

IRP

RP

200

VG = 1.2 V
VDD VDS
ID + IRP =
1 k + 200
VGS = VG (ID + IRP ) RS = VDS + VT H
VDD VDS
VG
RS = VDS + VT H
1 k + 200
VDS = 0.6 V
VGS = 1 V
W
1
2
(VGS VT H )
ID = n Cox
2
L
= 467 A
VDS
VDD VDS
ID + IRP = ID +
=
RP
1 k + 200
RP = 1.126 k

7.9 First, lets analyze the circuit excluding RP .

VGS = VDD = 1.8 V
VDS = VDD ID (2 k) = VGS 100 mV

W
1
2
(VGS VT H ) (2 k) = VGS 100 mV
VDD n Cox
2
L
W
= 0.255
L
Now, lets analyze the circuit with RP .
VDD
30 k

2 k
RP
IRP
M1

VGS = VDD IRP (30 k)

VGS VDS
50 mV
IRP =
=
RP
RP
VGS = VDD (ID IRP ) (2 k) + 50 mV


W
1
2
n Cox
(VGS VT H ) IRP (2 k) + 50 mV
VDD IRP (30 k) = VDD
2
L


1
W
2
VDD IRP (30 k) = VDD
n Cox
(VDD IRP (30 k) VT H ) IRP (2 k) + 50 mV
2
L
IRP = 1.380 A
50 mV
= 36.222 k
RP =
IRP

7.12 Since were not given VDS for the transistors, lets assume = 0 for large-signal calculations. Lets
also assume the transistors operate in saturation, since theyre being used as current sources.
IX =

1
W1
2
(VB1 VT H ) = 0.5 mA
n Cox
2
L1

W1 = 3.47 m
IY =

W2
1
(VB2 VT H )2 = 0.5 mA
n Cox
2
L2

W2 = 1.95 m
1
= 20 k
IX
1
= 20 k
=
IY

Rout1 = ro1 =
Rout2 = ro2

Since IX = IY and is the same for each current source, the output resistances of the current sources
are the same.

7.13 Looking into the source of M1 we see a resistance of

1
gm .

Including in our analysis, we have

1
1
=
gm
(V

V
|VT H |) (1 + VX )
p Cox W
X
B1
L
= 372

7.17 (a) Assume M1 is operating in saturation.

ID = 0.5 mA
VGS = VT H +

2ID
n Cox W
L

= 0.573 V
VDS = VDD ID RD = 0.8 volt > VGS VT H , verifying that M1 is in saturation
(b)
Av = gm RD
2ID
RD
=
VGS VT H
= 11.55

7.18 (a) Assume M1 is operating in saturation.

ID = 0.25 mA
s

VGS = VT H +

2ID
n Cox W
L

= 0.55 V
VDS = VDD ID RD = 1.3 V > VGS VT H , verifying that M1 is in saturation
(b)
VGS = 0.55 V
VDS > VGS VT H (to ensure M1 remains in saturation)

VDD ID RD > VGS VT H

W
1
2
(VGS VT H ) RD > VGS VT H
VDD n Cox
2
L
W
2 (VDD VGS + VT H )
<
L
n Cox (VGS VT H )2 RD
= 366.67
20
= 3.3
0.18
Thus, W/L can increase by a factor of 3.3 while M1 remains in saturation.
Av = gm RD

W
(VGS VT H ) RD
L 

W
(VGS VT H ) RD
= n Cox
L max

= n Cox
Av,max

= 22

7.19
P = VDD ID < 1 mW
ID < 556 A
Av = gm RD
r

= 2n Cox

= 5
W
20
<
L
0.18
RD > 1.006 k

W
ID RD
L

7.20 (a)
ID1 = ID2 = 0.5 mA
Av = gm1 (ro1 k ro2 )
s
 


W
1
1
= 2n Cox
ID1
k
L 1
1 ID1 2 ID2


W
L

= 10
= 7.8125

(b)
VDD VB = VT H +
VB = 1.1 V

2 |ID2 |


p Cox W
L 2

p
7.22 (a) If ID1 and ID2 remain constant while W and L double, then gm1 (W/L)1 ID1 will not change
1
1
(since it depends only on the ratio W/L), ro1 ID1
will not change, and ro2 ID2
will not
change. Thus, Av = gm1 (ro1 k ro2 ) will not change .
p

1
(b) If ID1 , ID2 , W , and L double, then gm1 (W/L)1 ID1 will increase by a factor of 2, ro1 ID1
1
will halve, and ro2 ID2 will halve. This means that ro1 k ro2 will halve as well, meaning

Av = gm1 (ro1 k ro2 ) will decrease by a factor of 2 .

7.26 (a)
ID1 = ID2 = 0.5 mA
s
2ID1


VGS1 = VT H +
n Cox W
L 1
= 0.7 V

VDS1 = VGS1 VT H (in order of M1 to operate at the edge of saturation)

= VDD VGS2
s
2ID2


VGS2 = VDD VGS1 + VT H = VT H +
n Cox W
L 2
 
W
= 4.13
L 2
(b)
gm1
gm2
q
2n Cox
= q
2n Cox
v
u W

u L

1
= t W

Av =

W
L 1 ID1

W
L 2 ID2

= 3.667

(c) Since (W/L)1 is fixed, we must minimize (W/L)2 in order to maximize the magnitude of the gain
(based on the expression derived in part (b)). If we pick the size of M2 so that M1 operates at the
edge of saturation, then if M2 were to be any smaller, VGS2 would have to be larger (given the
same ID2 ), driving M1 into triode. Thus, (W/L)2 is its smallest possible value (without driving
M1 into saturation) when M1 is at the edge of saturation, meaning the gain is largest in magnitude
with this choice of (W/L)2 .

7.27 (a)
gm1
gm2
q
2n Cox
= q
2n Cox
v
u W

u
L 1


= t W

Av =

W
L

W
L 1 ID1

W
L 2 ID2

= 5

= 277.78

(b)

VDD VT H

VDS1 > VGS1 VT H (to ensure M1 is in saturation)

VDD VGS2 > VGS1 VT H
s
s
2ID2
2ID1

>

W
n Cox L 2
n Cox W
L 1
ID1 = ID2 < 1.512 mA

7.28 For this problem, recall that looking into the drain of a transistor with a grounded gate and source
we see a resistance of ro , and looking into either terminal of a diode-connected transistor we see a
resistance of g1m k ro .
(a)


1
k ro2
Av = gm1 ro1 k
gm2
(b)


1
k ro3
Av = gm1 ro1 k ro2 k
gm3
(c)


1
Av = gm1 ro1 k ro2 k
k ro3
gm3
(d)


1
k ro3
Av = gm2 ro2 k ro1 k
gm3
(e)


1
k ro3
Av = gm2 ro2 k ro1 k
gm3
(f) Lets draw a small-signal model to find the equivalent resistance seen looking up from the output.
RD
+

+
vt

it

gm2 vgs2

vgs2

ro2

it = gm2 vgs2 +

vt it RD
ro2

vgs2 = vt
vt it RD
it = gm2 vt +
ro2




1
RD
= vt gm2 +
it 1 +
ro2
ro2
R

D
1 + ro2
vt
ro2 + RD
=
=
it
1 + gm2 ro2
gm2 + r1o2


ro2 + RD
Av = gm1 ro1 k
1 + gm2 ro2

7.30 (a) Assume M1 is operating in saturation.

ID = 1 mA
ID RS = 200 mV
RS = 200
RD
Av = 1
gm + RS
=

RD
1
2n Cox W
L ID

= 4
W
= 1000
L
s

VGS = VT H +

VDS

+ RS

2ID
n Cox W
L

= 0.5 V
= VDD ID RD ID RS

= 0.6 V > VGS VT H , verifying that M1 is in saturation

Yes , the transistor operates in saturation.
(b) Assume M1 is operating in saturation.
50
W
=
L
0.18
RS = 200
Av =

RD
1
2n Cox W
L ID

+ RS

= 4
RD = 1.179 k
s

VGS = VT H +

VDS

2ID
n Cox W
L

= 0.590 V
= VDD ID RD ID RS

= 0.421 V > VGS VT H , verifying that M1 is in saturation

Yes , the transistor operates in saturation.

7.42 (a)
Rout = RD = 500
VG = VDD
VD > VG VT H (in order for M1 to operate in saturation)
VDD ID RD > VDD VT H
ID < 0.8 mA
(b)
ID = 0.8 mA
1
Rin =
gm
1
=q
2n Cox W
L ID
= 50
W
= 1250
L

(c)
Av = gm RD
1
gm =
S
50
RD = 500
Av = 10

7.43 (a)
ID = I1 = 1 mA
VG = VDD
VD = VG VT H + 100 mV
VDD ID RD = VG VT H + 100 mV
RD = 300
(b)
RD = 300
Av = gm RD
r
=

2n Cox

=5

W
= 694.4
L

W
ID RD
L

7.44 For this problem, recall that looking into the drain of a transistor with a grounded gate and source
we see a resistance of ro , and looking into either terminal of a diode-connected transistor we see a
resistance of g1m k ro .
(a) Referring to Eq. (7.109) with RD =

1
gm2

and gm = gm1 , we have

Av =

1
gm2
1
gm1

+ RS

(b) Lets draw a small-signal model to find the equivalent resistance seen looking up from the output.
RD
+

+
vt

it

gm2 vgs2

vgs2

it = gm2 vgs2
vgs2 = vt
it = gm2 vt
1
vt
=
it
gm2
gm1
Av =
gm2
(c) Referring to Eq. (7.119) with RD =

1
gm2 ,

Av =

R3 = R1 , and gm = gm1 , we have

R1 k

1
gm1

RS + R1 k

1
gm1

gm1
gm2

(d)


1
k ro3
Av = gm1 RD +
gm2
(e)


1
Av = gm1 RD +
gm2

7.45 (a)


vX
1
= gm1 RD1 k
vin
gm2
vout
= gm2 RD2
vX
vout
vX vout
=
vin
vin vX


1
= gm1 gm2 RD2 RD1 k
gm2
(b)
lim

RD1

gm1 gm2 RD2 RD1 k

1
gm2

= gm1 RD2

This makes sense because the common-source stage acts as a transconductance amplifier with
a transconductance of gm1 . The common-gate stage acts as a current buffer with a current
gain of 1. Thus, the current gm1 vin flows through RD2 , meaning vout = gm1 vin RD2 , so that
vout
vin = gm1 RD2 .
This type of amplifier (with RD1 = ) is known as a cascode and will be studied in detail in
Chapter 9.

7.40
ID = 0.5 mA
1
Rin =
gm
1
=q
2n Cox W
L ID

VDD

= 50
W
= 2000
L
VD > VG VT H (in order for M1 to operate in saturation)
ID RD > Vb VT H
RD < 2.4 k

Since |Av | RD , we need to maximize RD in order to maximize the gain. Thus, we should pick
RD = 2.4 k . This corresponds to a voltage gain of Av = gm RD = 48.

7.42 (a)
Rout = RD = 500
VG = VDD
VD > VG VT H (in order for M1 to operate in saturation)
VDD ID RD > VDD VT H
ID < 0.8 mA
(b)
ID = 0.8 mA
1
Rin =
gm
1
=q
2n Cox W
L ID
= 50
W
= 1250
L

(c)
Av = gm RD
1
gm =
S
50
RD = 500
Av = 10

7.43 (a)
ID = I1 = 1 mA
VG = VDD
VD = VG VT H + 100 mV
VDD ID RD = VG VT H + 100 mV
RD = 300
(b)
RD = 300
Av = gm RD
r
=

2n Cox

=5

W
= 694.4
L

W
ID RD
L

7.44 For this problem, recall that looking into the drain of a transistor with a grounded gate and source
we see a resistance of ro , and looking into either terminal of a diode-connected transistor we see a
resistance of g1m k ro .
(a) Referring to Eq. (7.109) with RD =

1
gm2

and gm = gm1 , we have

Av =

1
gm2
1
gm1

+ RS

(b) Lets draw a small-signal model to find the equivalent resistance seen looking up from the output.
RD
+

+
vt

it

gm2 vgs2

vgs2

it = gm2 vgs2
vgs2 = vt
it = gm2 vt
1
vt
=
it
gm2
gm1
Av =
gm2
(c) Referring to Eq. (7.119) with RD =

1
gm2 ,

Av =

R3 = R1 , and gm = gm1 , we have

R1 k

1
gm1

RS + R1 k

1
gm1

gm1
gm2

(d)


1
k ro3
Av = gm1 RD +
gm2
(e)


1
Av = gm1 RD +
gm2

7.45 (a)


vX
1
= gm1 RD1 k
vin
gm2
vout
= gm2 RD2
vX
vout
vX vout
=
vin
vin vX


1
= gm1 gm2 RD2 RD1 k
gm2
(b)
lim

RD1

gm1 gm2 RD2 RD1 k

1
gm2

= gm1 RD2

This makes sense because the common-source stage acts as a transconductance amplifier with
a transconductance of gm1 . The common-gate stage acts as a current buffer with a current
gain of 1. Thus, the current gm1 vin flows through RD2 , meaning vout = gm1 vin RD2 , so that
vout
vin = gm1 RD2 .
This type of amplifier (with RD1 = ) is known as a cascode and will be studied in detail in
Chapter 9.

7.48 For small-signal analysis, we can short the capacitors, producing the following equivalent circuit.
R2 k R3 k RD

vout

M1
vin
R4

Av = gm (R2 k R3 k RD )

7.49
VGS = VDS
1
W
2
VGS = VDD ID RS = VDD n Cox
(VGS VT H ) (1 + VGS ) RS
2
L
VGS = VDS = 0.7036 V
ID = 1.096 mA
Av =
gm =
ro =

1
gm

ro k RS
+ ro k RS

2n Cox

W
ID = 6.981 mS
L

1
= 9.121 k
ID

Av = 0.8628

7.50
Av =

1
gm

RS
+ RS

=
n Cox W
L

RS
1
(VGS VT H )

+ RS

= 0.8
VGS = 0.64 V
1
W
2
ID = n Cox
(VGS VT H )
2
L
= 960 A
VG = VGS + VS = VGS + ID RS
= 1.12 V

7.55 For this problem, recall that looking into the drain of a transistor with a grounded gate and source
we see a resistance of ro , and looking into either terminal of a diode-connected transistor we see a
resistance of g1m k ro .
(a)
Av =

ro1 k (RS + ro2 )

gm1 + ro1 k (RS + ro2 )
1

(b) Looking down from the output we see an equivalent resistance of ro2 + (1 + gm2 ro2 ) RS by Eq.
(7.110).
ro1 k [ro2 + (1 + gm2 ro2 ) RS ]
Av = 1
gm1 + ro1 k [ro2 + (1 + gm2 ro2 ) RS ]
(c)
Av =

ro1 k

1
gm1

1
gm2

+ ro1 k

1
gm2

(d) Lets draw a small-signal model to find the equivalent resistance seen looking down from the
output.
R1
+
R2

+
gm2 vgs2

vgs2

ro2

vt
vt
+ gm2 vgs2 +
R1 + R2
ro2
R2
=
vt
R1 + R2
R2
vt
vt
+ gm2
vt +
=
R1 + R2
R1 + R2
ro2


1
gm2 R2
1
= vt
+
+
R1 + R2
R1 + R2
ro2


R1 + R2
k ro2
= (R1 + R2 ) k
gm2 R2


1 +R2
k ro2
ro1 k (R1 + R2 ) k Rgm2
R2


=
R1 +R2
1
k ro2
+
r
k
(R
+
R
)
k
o1
1
2
gm1
gm2 R2

it =

it
it
vt
it
Av

vt

vgs2

it

(e)
Av =

ro2 k ro3 k

1
gm2

1
gm1

+ ro2 k ro3 k

1
gm1

(f) Looking up from the output we see an equivalent resistance of ro2 + (1 + gm2 ro2 ) ro3 by Eq.
(7.110).
ro1 k [ro2 + (1 + gm2 ro2 ) ro3 ]
Av = 1
gm1 + ro1 k [ro2 + (1 + gm2 ro2 ) ro3 ]

7.58
P = VDD ID = 2 mW
ID = 1.11 mA
RD ID = 1 V
RD = 900
Av = gm RD
r
=

= 5

2n Cox

W
= 69.44
L

W
ID RD
L

7.60 Lets let R1 and R2 consume exactly 5 % of the power budget (which means the branch containing RD ,
M1 , and RS will consume 95 % of the power budget). Lets also assume Vov = VGS VT H = 300 mV
exactly.
ID VDD = 0.95(2 mW)
ID = 1.056 mA
ID RS = 200 mV
RS = 189.5
Vov = VGS VT H = 300 mV
W 2
1
ID = n Cox Vov
2
L
W
= 117.3
L
RD
Av = 1
gm + RS
=

RD
1

2n Cox W
L ID

+ RS

= 4
RD = 1.326 k
2
VDD
= 0.05(2 mW)
R1 + R2
2
VDD
R1 + R2 =
0.1 mW
VG = VGS + ID RS = Vov + VT H + ID RS = 0.9 V
R2
VG =
VDD
R1 + R2
R2
= V2
= 0.9 V
DD

0.1 mW

R2 = 29.16 k
R1 = 3.24 k

7.61 Lets let R1 and R2 consume exactly 5 % of the power budget (which means the branch containing
RD , M1 , and RS will consume 95 % of the power budget).
RD = 200
ID VDD = 0.95(6 mW)
ID = 3.167 mA
ID RS = Vov = VGS VT H
Vov
RS =
ID
2ID
gm =
Vov
RD
Av = 1
gm + RS
RD
Vov
2ID + ID

= Vov
= 5

Vov = 84.44 mV
RS = 26.67
2ID
W
= 4441
=
2
L
n Cox Vov
2
VDD
= 0.05(6 mW)
R1 + R2
2
VDD
R1 + R2 =
0.3 mW
VG = VGS + ID RS = Vov + VT H + ID RS = 0.5689 V
R2
VG =
VDD
R1 + R2
R2
= V2
= 0.5689 V
DD

0.3 mW

R2 = 6.144 k
R1 = 4.656 k

7.62
Rin = R1 = 20 k
P = VDD ID = 2 mW
ID = 1.11 mA
VDS = VGS VT H + 200 mV

VDD ID RD = VDD VT H + 200 mV

RD = 180
Av = gm RD
r

2n Cox

W
ID RD
L

= 6

W
= 2500
L
s

VGS = VT H +

2ID
n Cox W
L

= 0.467 V
VGS = VDD ID RS
RS
1
2f C1
1
2f C1
f

= 1.2 k
R1
1
R1
10
= 1 MHz
=

C1 = 79.6 pF
1
1
k RS
2f CS
gm
1 1
1
=
2f CS
10 gm
r
gm =

2n Cox

CS = 52.9 nF

W
ID = 33.33 mS
L

7.64 (a)
Av = gm1 (ro1 k RG k ro2 )

(b)
P = VDD ID1 = 3 mW
ID1 = |ID2 | = 1.67 mA

VDD
|VGS2 | = |VDS2 | = VDS =
2
 
W
1
(|VGS2 | |VT H |)2 (1 + p |VDS2 |)
|ID2 | = p Cox
2
L 2
 
W
= 113
L 2
Av = gm1 (ro1 k RG k ro2 )

RG = 10 (ro1 k ro2 )
1
ro1 =
= 6 k
n ID1
1
= 3 k
ro2 =
p |ID2 |

RG = 10 (ro1 k ro2 ) = 20 k
s
 
W
Av = 2n Cox
ID1 (ro1 k RG k ro2 )
L 1


W
L

= 15
= 102.1
1

VIN = VGS1 = VT H +
= 0.787 V

n Cox

2I

D
(1 + n VDS1 )

W
L 1

7.66
P = VDD ID1 = 1 mW
ID1 = |ID2 | = 556 A
 
p
W
Vov1 = VGS1 VT H = 2ID n Cox
= 200 mV
L 1
 
W
= 138.9
L 1
gm1
Av =
gm2
q


2n Cox W
L 1 ID1
= q


2n Cox W
L 2 |ID2 |
v
u W

u L

1
= t W
L

W
L

= 4

= 8.68

VIN = VGS1 = Vov1 + VT H = 0.6 V

7.67
P = VDD ID = 3 mW
ID = I1 = 1.67 mA
1
1
=q
Rin =
gm
2 C
n

W
ox L ID

W
= 600
L

Av = gm RD =
RD = 250

1
RD = 5
50

= 50

7.68
P = VDD ID = 2 mW
ID = 1.11 mA
VD = VG VT H + 100 mV
VDD ID RD = VG VT H + 100 mV
VG = VDD

2ID
RD = 4
VGS VT H
VGS VT H
RD = Av
2ID
VGS VT H
= VDD VT H + 100 mV
ID Av
2ID
VGS = 0.55 V
Av = gm RD =

VDD

RD = 270
VS = VDD VGS = ID RS
RS = 1.125 k
2ID
W
=
2 = 493.8
L
n Cox (VGS VT H )

7.73
P = VDD ID1 = 3 mW
ID1 = ID2 = 1.67 mA
Av =
=

ro1 k ro2
gm1 + ro1 k ro2
1

ro1 k ro2
1
q
+ ro1
2n Cox ( W
L ) ID1
1

k ro2

= 0.9
1
= 6 k
ro1 = ro2 =
ID1
 
W
= 13.5
L 1
Let Vov2 = VGS2 VT H = 0.3 V. Lets assume that VOUT = VDS2 = Vov2 .


VGS2 = Vb = Vov2 + VT H = 0.7 V


2ID2
W
=
2
L 2
n Cox (VGS2 VT H ) (1 + VDS2 )
= 161

VGS1 = VT H +

n Cox

2ID1


W
L 1 (1

VDS1 = VDD VDS2 = 1.5 V

VGS1 = 1.44 V

VIN = VGS1 + VDS2 = 1.74 V

+ VDS1 )