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Micro Project

This document describes a BJT-based temperature measurement circuit using a silicon diode sensor. The circuit aims to obtain the voltage across the diode, which varies by -2mV/°C, and amplify it using a BJT differential amplifier for measurement. Experimental results showed a voltage variation across the diode of -2mV/°C as expected. However, problems arose in that the circuit could not sense variations lower than 2mV due to noise, and temperature could not be controlled precisely during testing.

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Anshul Goyal
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60 views3 pages

Micro Project

This document describes a BJT-based temperature measurement circuit using a silicon diode sensor. The circuit aims to obtain the voltage across the diode, which varies by -2mV/°C, and amplify it using a BJT differential amplifier for measurement. Experimental results showed a voltage variation across the diode of -2mV/°C as expected. However, problems arose in that the circuit could not sense variations lower than 2mV due to noise, and temperature could not be controlled precisely during testing.

Uploaded by

Anshul Goyal
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BJT based temperature measurement circuit using

a silicon diode sensor (output proportional to temp)

Anshul Goyal
4/17/2009
Introduction:

The project includes obtaining the voltage across a diode get it reduced so as to have a factor
which is due to temperature only with respect to a reference temperature. This potential
difference being very small of the order of -2mV/0C is amplified using a BJT differential
amplifier whose linear range for input is of the order of few VT’s (VT = threshold voltage =
25mv) which is ideal for our requirement.

CIRCUIT DIAGRAM ANALYSIS:

BASIS assumption: -2mV/0C is the diode characteristic. We were not able to calculate it
experimently as we do not have a device to vary the temperature in a much controlled manner.
Moreover the noises in the system are strong enough to deviate the readings by mV’s which would
incorporate undesired error into our system.

Experimental results:

Source current = 1.095 mA

Sink current = .96 mA

Voltage across the diode at room temperature = .505 so we applied .5 v so as to have just the
temperature factor

Equation

V = n VT ln (i/is)

VT = kT/q

V = n kT/q * ln (i/is)

So V vary linearly with temperature whose slope comes out to be -2mV/0C

Modes in which transistors are working

Q6 and Q7 are biased with a constant current source and have their base voltages around

1.095 * 4.700 V = 5.1465 V

High transistor input resistance

Base voltage of q7 remain almost same which is 5.16 v

Voltage at – diode is 5.19 v

NOW EXTRA VOLTAGE APPLIED


25 .505

0 .555
Actually provided the potential with power supply only

PROBLEMS
0 We have to sence 2 mv or even less to increase the sensitivity of the device but this
is much below the noise level. So a difference of 2 mv comes out with noise. The
PD that we provided as .55 v was not constant, It varies in the power supply itself
and can be seen on DMM
1 The chips were not responding properly.
2 No device available to change the temperature in a controlled manner
3

AT 00C
Battery have .55 voltage
As temp incr,vi decrease 1 voltage incr, so v6 – v7 so as to have easy doing things.

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