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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides specifications for the SavantIC Semiconductor 2SA1333 silicon PNP power transistor. Key details include: 1) It has an MT-200 package and is intended for audio and general purpose applications with high power dissipation. 2) Absolute maximum ratings include a collector-base voltage of -200V, collector-emitter voltage of -200V, and junction temperature of 150°C. 3) Electrical characteristics include a collector-emitter breakdown voltage over -200V, DC current gain of 30 typical, and transition frequency over 2MHz.

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70 views3 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides specifications for the SavantIC Semiconductor 2SA1333 silicon PNP power transistor. Key details include: 1) It has an MT-200 package and is intended for audio and general purpose applications with high power dissipation. 2) Absolute maximum ratings include a collector-base voltage of -200V, collector-emitter voltage of -200V, and junction temperature of 150°C. 3) Electrical characteristics include a collector-emitter breakdown voltage over -200V, DC current gain of 30 typical, and transition frequency over 2MHz.

Uploaded by

luispider74
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1333

DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications
PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION

Absolute maximum ratings(Ta=25 )


SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -15 -5 150 150 -55~150 UNIT V V V A A W

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ; IB=0 IE=-1mA ; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-200V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-1A ; VCE=-12V 50 MIN -200 -5

2SA1333

SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT

TYP.

MAX

UNIT V V

-2.0 -2.5 -100 -100

V V A A

30

MHz

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors


PACKAGE OUTLINE

2SA1333

Fig.2 outline dimensions

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