Light Sources Light Emitting Diodes Laser Diodes

Chap. 3 Light Emitting Diode

Application

Light Emitting Diode

Outdoor jumbo TV screen

Digital Clocks

Signboards

Remote Control

Traffic Signals

Illumination

Chap. 3 Light Emitting Diode

Application

Chap. 3 Light Emitting Diode

Luminous Performance

Organic LED display

(1879)

Chap. 3 Light Emitting Diode

Solid State Lighting Electricity Consumption in US

Chap. 3 Light Emitting Diode

Costs Associated with Various White Lighting

Incandescence luminous efficacy: low (16lm/W) light bulbs: inexpensive (0.4$/klm) very short lifetime (1,000hrs) Fluorescence luminous efficacy: high (85lm/W) long lifetime (10,000 hrs) High-Intensity Discharges luminous efficacy: high (90lm/W) long lifetime: (20,000 hrs) Solid State Lightning (LED) high luminous efficacy (>60lm/W) extremely long lifetime: (>100,000 hrs)

Luminous efficacy
Luminous efficacy is a property of light sources, which indicates what portion of the emitted electromagnetic radiation is usable for human vision. It is the ratio of emitted luminous flux to radiant flux. Luminous efficacy is related to the overall efficiency of a light source for illumination, but the overall lighting efficiency also depends on how much of the input energy is converted into electromagnetic waves (whether visible or not). In SI, luminous efficacy has units of lumens per watt (lm/W). Photopic luminous efficacy has a maximum possible value of 683 lm/W, for the case of monochromatic light at a wavelength of 555 nm (green). Scotopic luminous efficacy reaches a maximum of 1700 lm/W for narrowband light of wavelength 507 nm.

Type

Luminous efficacy (lm/W)

Luminous efficiency

[2]

Class M star (Antares, Betelgeuse), 3000 K ideal black-body radiator at 4000 K Class G star (Sun, Capella), 5800 K natural sunlight ideal black-body radiator at 7000 K ideal white light source ideal monochromatic 555 nm source

30 47.5 80 93 95
[3] [3]

4% 7.0% 12% 14% 14%

[4]

242.5 683
[5]

35.5% 100%

Luminous
The lumen (symbol: lm) is the SI unit of luminous flux, a measure of the perceived power of light. Luminous flux differs from radiant flux, the measure of the total power of light emitted, in that luminous flux is adjusted to reflect the varying sensitivity of the human eye to different wavelengths of light

Light Emitting Diodes - Principles

If forward bias V is applied voltage drop mainly occurs across the depletion region Built-in potention Vo is reduced to Vo V. Allow the electrons from n+ side to diffuse (or become injected), into the p-side (Fig. b). The hole injection component from p- into n+ side is much smaller. The recombination of injected electrons in the depletion region as well as in the neutral p-side results in photons emission. Recombination mainly occurs inside depletion region and within a volume extending over the diffusion length Le of the electrons in the p-side. Recombination zone is called active region. The phenomenon of light emission from EHP recombination as result of minority carrier injection is called injection electroluminescense.
26

Chap. 3 Semiconductor Science and Light Emitting Diode

Light Emitting Diodes - Structure

The p-side is on the surface from which light is emitted as is therefore made narrow (a few microns) to allow the photon to escape without being reabsorbed. The n-side is heavily doped to ensure that the most of the recombination takes place in the p-side. The photons which are emitted toward the n-side become either absorbed or reflected back at the substrate interface depending on the substrate thickness and the exact structure of the LED.

3.5 Light Emitting Diode

B. Device Structure

Schematic illustration of typical planar surface emitting LED devices

Light output p n+ n+ Substrate p

Light output Insulator (oxide) Epitaxial layer

Epitaxial layers

n+ n+ Substrate

Metal electrode

p-layer grown epitaxially on an n+ substrate

First n+ is epitaxially grown and then p region is formed by dopant diffusion into the epitaxial layer

27

The inner workings of a LED

Chap. 3 Semiconductor Engineering and Light Emitting Diode

3.5 Light Emitting Diode
A. Principles

Principles of Light Emitting Diode

Electron energy Ec EF Ev Eg p eVo n+ Ec EF eVo p n+

Eg h - Eg

Ev V

Electron in CB Hole in VB
The energy band diagram of a p-n+ (heavily n-type doped) junction without any bias. Built-in potential Vo prevents electrons from diffusing from n+ to p side.

The applied bias reduces Vo and thereby allows electrons to diffuse, be injected, into the p-side. Recombination around the junction and within the diffusion length of the electrons in the p-side leads to photon emission.

3.7 Hetero Junction High Intensity LEDs

n+ AlGaAs

p GaAs
~ 0.2 m

p AlGaAs

Electrons in CB EF Ec
2eV

Ec eVo
1.4eV 2eV

Ec No bias EF Ev

A double heterostructure diode has two junctions which are between two different bandgap semiconductors (GaAs and AlGaAs) A simplified energy band diagram with exaggerated features. EF must be uniform.

Ev

Holes in VB

With forward bias

Forward biased simplified energy band diagram

n+

AlGaAs

GaAs

AlGaAs

Forward biased LED. Schematic illustration of photons escaping reabsorption in the AlGaAs layer and being emitted from the device.

Chap. 3 Semiconductor Science and Light Emitting Diode

3.5 Light Emitting Diode
B. Device Structure

Chap. 3 Semiconductor Science and Light Emitting Diode

3.5 Light Emitting Diode
B. Device Structure

Chap. 3 Semiconductor Science and Light Emitting Diode

3.5 Light Emitting Diode
B. Device Structure

Chap. 3 Semiconductor Science and Light Emitting Diode

3.5 Light Emitting Diode
B. Device Structure

A generic surface-emitting LED. Some photons are lost by reabsorption in the bulk, Fresnel reflection from the surface, and total internal reflection.

Schematic illustration of typical planar surface emitting LED devices

Light output Light

Domed semiconductor

Plastic dome

p n+ Substrate

pn Junction n+ Electrodes

Electrodes

Some light suffers total internal reflection and cannot escape

Internal reflections can be reduced and hence more light can be collected by shaping the semiconductor into a dome so that the angles of incidence at the semiconductor-air surface are smaller than the critical angle

An economic method of allowing more light to escape from the LED is to encapsulate it in a transparent plastic dome

Chap. 3 Semiconductor Science and Light Emitting Diode

3.6 LED Materials

Radiative recombination

Ec Eg Ev

EN

Ec

Ev

Ea

GaAs
Photon emission in a direct bandgap semiconductor

N doped GaP
GaP is an indirect bandgap semiconductor. When doped with nitrogen there is an electron trap at EN. Direct recombination between a trapped electron at EN and a hole emits a photon.

Al doped SiC
In Al doped SiC, EHP recombination is through an acceptor level like Ea.

Light Emitting Diodes - Materials

There are various direct bandgap semiconductor materials that can be readily doped to make commercial pn juction LEDs that emit radiation in the red and infrared range of wavelengths. Class of commercial semiconductor materials that cover visible spectrum is the III-V ternary alloys (three elements) based on alloying GaAs and GaP, which are denoted as GaAs1-yPy. When y < 0.45, this alloy is a direct bandgap semiconductor and hence the EHP recombination process is direct (fig. a). The emitted wavelengths are 630 nm (y = 0.45) 870 nm (y = 0). For indirect bandgap, y > 0.45, EHP recombination processes occur through recombination centers and invlve lattice vibrations (phonon). Isoelectronic impurities, such as nitrogen (in the same group V as P) some N atoms substitute for P atoms.

Light Emitting Diodes - Materials

Positive nucleus of N is less shielded conduction electron in the neighborhood of an N atom will be attracted and may traped at this site. N atom then have localized energy levels, or electron traps, EN, near the conduction band (fig b). The trapped electron then can attract a hole in its vicinity recombine with it and emit a photon. The emitted photon energy is slightly less than Eg. The recombination process depends on N doping less efficient. Mainly used from green, yellow, and orange LEDs. Two types of blue LED materials: GaN alloy (InGaN) and Al doped SiC. The localized energy level captures a hole from the valence band and a conduction electron then recombines with this hole to emit a photon (fig c). More efficient blue LEDs using direct bandgap compound II-VI semiconductors, such as ZnSe.
56

55

 Other various commercial direct bandgap semiconductor material that emit the red and infrared wavelengths: ternary, quartenary alloys based on III and V elements. Emitted radiation ranges from 640 870 nm (from deep red light to infrared). External efficiency external of an LED: efficiency of conversion of electrical energy into an emitted external external energy.

In0.14Ga0.86As

Indirect bandgap
InGaN SiC(Al) GaP(N)

In0.57Ga0.43As0.95P0.05

Light Emitting Diodes - Materials

Light Emitting Diodes - Materials

In0.7Ga0.3As0.66P0.34 GaAs0.55P0.45

GaAs

GaAs1-yPy
x = 0.43

In1-xGaxAs1-yPy

external =

Pout (Optical) 100% IV

0.4 0.5 0.6
Violet Blue

AlxGa1-xAs In0.49AlxGa0.51-xP

GaSb

InP

0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7

Free space wavelength coverage by different LED materials from the visible spectrum to the infrared including wavelengths used in optical communications. Hatched region and dashed lines are indirect Eg materials.
57 58

Color Infrared Red

Wavelength (nm) > 760 610 < < 760

Voltage (V) V < 1,9 1,63 < V < 2,03

Semi-conductor Material Gallium arsenide (GaAs) Aluminium gallium arsenide (AlGaAs) Aluminium gallium arsenide (AlGaAs) Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Indium gallium nitride (InGaN) / Gallium(III) nitride (GaN) Gallium(III) phosphide (GaP) Aluminium gallium indium phosphide (AlGaInP) Aluminium gallium phosphide (AlGaP) Zinc selenide (ZnSe) Indium gallium nitride (InGaN) Silicon carbide (SiC) as substrate Silicon (Si) as substrate (under development) Indium gallium nitride (InGaN) diamond (C) Aluminium nitride (AlN) Aluminium gallium nitride (AlGaN) [17] (AlGaInN) (down to 210 nm ) Blue/UV diode with phosphor 60

Orange Yellow Green

590 < < 610 570 < < 590 500 < < 570

2,03 < V < 2,10 2,10 < V < 2,18 2,18 < V < 4,0

Blue

450 < < 500

2,48 < V < 3,7

Violet Ultraviolet

400 < < 450 < 400

2,76 < V < 4,0 3,1 < V < 4,4

Homojunction: a pn junction between two differently doped semiconductors that are of the same material. Heterojunction: a pn junction between two different bandgap semiconductors. Heterostructure device (HD): Semiconductor device that has junctions between different bandgap materials. The refractive index of a semiconductor material depends on its bandgap. Wider bandgap lower refractive index. Manipulate a dielectric waveguide within a device and thereby channel photons out from the recombination region.

White

Broad spectrum

V = 3,5

[edit] Ultraviolet and blue LEDs

Green Yellow Orange Red

The input power: product of diode current and voltage.

0.7 0.8 Infrared

Heterojuction High Intensity LEDs

Chap. 3 Semiconductor Science and Light Emitting Diode

3.6 LED Materials

Example
LED External conversion efficiency The external power or conversion efficiency ext is defined as P Optical power output ext = = o IV Electrical power input One of the major factors reducing the external power efficiency is the loss of photons in extracting the emitted photons which suffer reabsorption in the pn junction materials, absorption outside the semiconductors and various reflections at interfaces. The total light output power from a particular AlGaAs red LED is 2.5 mW when the current is 50 mA and the voltage is 1.6 V. Calculate its external conversion efficiency. Solution

External Quantum Efficiency

external =

Poptical output 100 % I V

ext =

Po 2.5 10 3 W = 3 IV (50 10 A)(1.6 V)

= 0.03125 = 3.125 %

Double-heterostructure configuration

Example
Ga1-xAlxAs LED
Two Ga1-xAlxAs LEDs: one has a band-gap energy of 1.540 eV and the other has x=0.015. Eg=1.424+1.266 x + 0.266 x2 (a) Find the Al mole fraction x and the emission wavelength for the first LED. (b) Find the energy-bandgap and the emission wavelength of the other LED.

Clad

Active

Clad

(a)

1.540 = 1.424 + 1.266 x + 0.266 x 2 x 2 + 4.759 x 0.436 = 0

Taking the + sign only!

Electron Energy

x=

4.759 + 4.759 4(0.436) = 0.090 2 1.240 The emission wavelength is = = 805 nm 1.540eV
2

Refractive index

(b)

E g = 1.424 + 1.266(0.15) + 0.266(0.15) 2 = 1.620eV

1.240 = 766 nm 1.620eV

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

Wavelength vs. Typical Materials

Materials Wavelength 370 450 525 562 574 590 644 660 700 880 940 Color
purple blue green green yellow green yellow red red red UV UV

[ m ] =

1.24 E [eV ]

GaInN GaInN GaInN InGaAIP/GaAs InGaAIP/GaAs InGaAIP/GaP InGaAlP GaAlAs/GaAs GaP/GaP GaAlAs GaAs

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

An historical view of the development of visible LEDs

Lattice constants of several common semiconductors

The solid lines indicate direct-gap materials; the dashed lines are indirect-gap.

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics Bandgap energy Eg and Lattice constant
Eg (eV)
Quaternary alloys 2.6 Direct bandgap with indirect bandgap 2.4 Indirect bandgap GaP 2.2 2 Quaternary alloys 1.8 with direct bandgap 1.6 InP 1.4 GaAs Solid lines 1.2 direct bandgap alloys Dashed line 1 In1-xGaxAs indirect bandgap alloys 0.8 In0.535Ga0.465As 0.6 X InAs 0.4 0.2 0.54 0.55 0.56 0.57 0.58 0.59 0.6 0.61 0.62 Lattice constant (m)

Energy bandgap and lattice constant for three III-V compound solid alloy system.13

A line represents a ternary alloy formed with compounds from the end points of the line. Regions between lines represent quaternary alloys. The line from X to InP represents quaternary alloys In1-xGaxAs1-yPy made from In0.535Ga0.465As and InP which are lattice matched to InP.

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics LED output spectrum
Comparison of some characteristics of (a) homjunction laser and (b) doubleheterojunction (DH) laser. Second from the top row shows energy band diagrams under forward bias. The refractive index change for a homojunction laser is less than 1%. The refractive index change for DH laser is about 5%. The confinement of light is shown in the bottom row.14

The intensity of recombination at a given wavelength depends on the distributions of electrons and holes in energy.

50-100 nm

The resulting emission spectrum

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics LED output spectrum
E

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

LED output spectrum

CB
Ec
1

Electrons in CB

2kBT
1/ k T 2 B

Relative intensity Eg + kBT 1 h 0 (2.5-3)kBT

Relative intensity 1 h3 h 0

Relative light intensity 655 nm 1.0 0.5 0 600

24 nm

Relative light intensity e 2 1

V (V)

Eg
2 3

Ev

VB

Holes in VB Carrier concentration

h1 Eg

h2

2 1

650

700

I (mA) 0 20 40 Typical output light power vs. forward current.

20

40

I (mA)

Energy band diagram with possible recombination paths

Energy distribution of electrons in the CB and holes in the VB. The highest electron concentration is (1/2)kBT above Ec

The relative light intensity as a function of photon energy based on (b)

Relative intensity as a function of wavelength in the output spectrum based on (b) and (c)

A typical output spectrum (relative intensity vs. wavelength) from a red GaAsP LED.

Typical I-V characteristics of a red LED. The turn-on Voltage is around 1.5V.

Chap. 3 Semiconductor Science and Light Emitting Diode

3.6 LED Materials

Example
LED Output spectrum Using the expression of E=hc/, show why the FWHM power spectral width of LEDs becomes wider at longer wavelength.

Linewidth of the Output Spectrum

c h c = = E photon

E=
d h c 2 dE photon E photon
d E photon dE photon
small changes or intervals () vs. differentials

hc

dE =

hc

E =

hc

d E photon dE photon

Differentiating for E

small changes or intervals () vs. differentials

h c E photon E 2 photon

For the same energy difference , the spectral width is proportional to the wavelength squared. Thus, for example,

1550 1550 = = 1.40 1310 1310

2

Example
LED Output spectrum Given the width of the relative light intensity vs. photon energy spectrum of LED is typically around 3kBT, what is the linewidth 1/2 in the output spectrum in terms of wavelength?

Example
LED Output Wavelength variations Consider a GaAs LED. The bandgap of GaAs at 300K is 1.42 eV, which decrease with temperature as dEg /dT = -4.5x10-4 eV/K. What is the change in the emitted wavelength if the temperature change is 10C. Neglecting the kBT term and taking = hc/Eg

=
small changes or intervals () vs. differentials

c h c = E photon

d h c = 2 dE photon E photon
h c 2 E photon E photon

d E photon dE photon
given

d h c dE g (6.626 10 34 )(3 108 ) ( 4.5 104 1.6 1019 ) = = 2 dT E g dT (1.42 1.6 1019 )2 d = 2.77 10 7 m K , 0.277 m K dT
The change in the wavelength for T

E photon ( h ) 3 k BT

3 k BT h c

= 870 nm, = 47 nm = 1300 nm, = 105 nm = 1550 nm, = 149 nm

d = T = ( 0.277 nm / K )(10 K ) 2.8nm dT

Example
InGaAsP on InP substrate The ternary alloy In1-xGaxAs1-yPy grown on an InP crystal substrate is a suitable commercial semiconductor material for infrared LED and laser diode applications. The device requires that the InGaAsP layer is lattice matched to the InP crystal substrate to avoid crystal defects in the InGaAsP layer. This turn requires that y 2.2x . The bandgap energy Eg of the ternary alloy in eV is then given by the empirical relationship, Eg 1.35 - 0.72y + 0.12y2 : 0 x 0.47 Calculate the compositions of InGaAsP ternary alloys for peak emission a a wavelength of 1.3 m. (h= 6.626x10-34 joule-sec, kB= 8.617x10-5 eV/K, kBT= 0.0259 eV (T=300K), c= 3x108 m/sec, q= 1.6x10-19 coul) The photon energy at peak emission is Then

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

Temperature dependence of LED output spectrum

Temperature dependence of the output spectrum from AlGaAs LED. (Values normalized to peak emission at 25C.)

Relative spectral output power

h c

40C 1 25C

= E g + k BT

h c k BT E g [eV ] = e e

= 1.3 10 6 m , T = 300 K

85C

( 3 108 )(6.626 10 34 ) Eg = 0.0259 eV = 0.928 eV (1.6 10 19 )(1.3 10 6 )

The InGaAsP then must have y satisfying The quaternary alloy is

In0.7Ga0.3 As0.34 P0.66

0.928 = 1.35 0.72 y + 0.12 y 2 0.66 y = 0.66, x = = 0.3 2.2

0 740 800 840 880 900

Wavelength (nm)

Example
AlGaAs LED emitter An AlGaAs LED emitter for use in a local optical fiber network has the output spectrum shown in Figure. It is designed for peak emission at 820 nm at 25C. a) What is the linewidth between half power points at -40C, 25C and 85C? What is the empirical relationship between and T given three temperatures and how does this compare with (h) 2.5 kBT 3 kBT? b) Why does the peak emission wavelength increase with temperature? c) Why does the peak intensity decrease with temperature? d) What is the bandgap of AlGaAs in this LED ? e) The bandgap, Eg, of the ternary alloys AlxGa1-xAs follows the empirical expression, Eg (eV) = 1.424 + 1.266x + 0.266x2. What is the composition of the AlGaAs in this LED? f) When the forward current is 40 mA, the voltage across the LED is 1.5V and the optical power that is coupled into a multimode fiber through a lens is 25 mW. What is the efficiency? 0 Relative spectral output power 40C 1 25C 85C

740

800 840 Wavelength (nm)

880 900

The output spectrum from GaAlAs LED. Values normalized to peak emission at 25C.

Solution
a) We note that the emitted wavelength is related to the photon energy Eph by
70000 60000 50000 x x x

= c/ = hc/Eph

If we differentiate with respect to photon energy Eph we get

d hc = 2 dE ph E ph
/( 2)

40000 30000 20000 10000 0 0 100 200 300 Temperature (K) 400 Best line forced through zero is /( 2) = 1956T

We can represent small changes (or ) by differentials, e.g. /Eph |d/dEph|, then hc 2 E ph E ph We are given the energy width of the output spectrum, Eph = (h) 3kBT. Then, using the latter and substituting for Eph in terms of we find,

3k T B hc
2

Temperature Parameter

40 C 804 30 26.2 31.4

25 C 820 40 34.8 41.7

85 C 837 48 43.6 52.3

Comment

peak (nm)
(nm) (Measured) (nm) (Calculated); Eph = 2.5 kT (nm) (Calculated); Eph = 3 kT

The theory predicts that /2 vs. T should be a straight line because, 2 Eph hc mkB T so that 2 = hc where Eph = mkBT and m is a numerical constant that represents the ratio (h)/(kBT) and is determined from the slope of the /2 vs. T plot.
The three points plotted in the figure seems to follow this behavior. The best line forced through zero has a slope (m = 2.8).

Very close

b) c)

The bandgap decreases with temperature There are two factors to consider. (i) Spectral intensity means intensity per unit wavelength, that is, dI/d. The integration of the spectral curve gives the total intensity, the total number of photons emitted per unit area per unit time. As the spectrum broadens with temperature we would naturally expect the peak to decrease with temperature. (ii) Higher the temperature, the stronger are the lattice vibrations (there are more phonons). Indirect or radiationless transitions, those that do not emit photons, require phonons (lattice vibrations) which encourage indirect transitions. Thus increasing the temperature increases indirect transitions at the expense of direct transitions and the light intensity decreases. If (ii) was totally absent then the areas under the curves for all the three spectra would be identical. d)

e)

The bandgap Eg of the ternary alloys AlxGa1-xAs follows the empirical expression,

Eg(eV) = 1.424+1.266x+0.266x2. Eg(eV) = 1.4863 = 1.424 + 1.266x + 0.266x2.

Solving for x we find, x = 0.05.

f)

From the definition of efficiency ,

=
P 25 10 26 W Output optical power = o = = 0.000417 = 0.0417% Input electrical power IV 40mA 1.5V

Use the peak emission wavelength to find Eg as follows: At -40 C (233 K) , peak = 804 nm. At 25 C (298 K), peak = 820 nm. At 85 C (358 K), peak = 837 nm. We first note that we need the required bandgap Eg at the wavelength of interest. The photon energy at peak emission is hc/peak = Eg + kBT. Then, kT ch Eg = B and at peak = 820 nm, taking T = 25C + 273 K= 298 K, epeak e
Eg = (3 108 )(6.626 1034 ) 0.0257 eV = 1.4863 eV (1.6 1019 )(820 109 )

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

Chap. 3 Semiconductor Science and Light Emitting Diode

3.8 LED Characteristics

LED radiation pattern

LED symbols

An LED is a directional light source, with the maximum emitted power in the direction perpendicular to the emitting surface. The typical radiation pattern shows that most of the energy is emitted within 20of the direction of maximum light. Some packages for LEDs include plastic lenses to spread the light for a greater angle of visibility.

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

Semiconductor Science and Light Emitting Diode

LED Characteristics

Device structures

LED spectral patterns

Light

Light
Double heterostructure
Narrower FWHM

Surface emitting LED

Edge emitting LED

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

Optical Fiber Coupling of Surface emitting LED

Surface-emitting LED

Fiber (multimode) Epoxy resin Electrode Etched well

Double heterostructure

Fiber Microlens (Ti2O3:SiO2 glass)

SiO2 (insulator) Electrode

Light is coupled from a surface emitting LED into a multimode fiber using an index matching epoxy. The fiber is bonded to the LED structure.

A microlens focuses diverging light from a surface emitting LED into a multimode optical fiber.

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

A Burrus-type LED. This one uses a Double Heterostructure to confine the carriers, making recombination more efficient. The etched opening in the LED helps align and couple an optical fiber.

In an Edge-emitting LED, the higher-index active layer acts as a waveguide for photons traveling at less than the critical angle.

The edge-emitting LEDs waveguide supports only certain transverse modes, in practice, only the first mode is allowed. It is not completely confined to the active layer, thus its absorption is reduced.

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

Schematic illustration of the structure of a double heterojunction stripe contact Edge emitting LED
60-70 m

Edge emitting LED

L Stripe electrode Insulation p+-InP (Eg = 1.35 eV, Cladding layer) p+-InGaAsP (Eg 1 eV, Confining layer) n-InGaAs (Eg 0.83 eV, Active layer) n+-InGaAsP (Eg 1 eV, Confining layer) n+-InP (Eg = 1.35 eV, Cladding/Substrate) Electrode

2 1 Current paths Substrate

200-300 m

Light beam

Cleaved reflecting surface Active region (emission region)

Chap. 3 Semiconductor Science and Light Emitting Diode

3.9 LEDs for Optical Fiber Communication

Light from an Edge emitting LED is coupled into a fiber typically by using a lens or a GRIN rod lens
Step-index multimode fibers are mostly used for imaging and illumination. Graded-index multimode fibers are used for data communications and networks carrying signals moderate distances typically no more than a couple of kilometers

ELED

Lens

GRIN-rod lens Multimode fiber ELED Single mode fiber

Active layer

Example
LED-Fiber coupling Efficiency a) It is found that approximately 200 W is coupled into a multimode step index fiber from a surface emitting LED when the current is 75 mA and the voltage across the LED is about 1.5 V. What is the overall efficiency of operation?

Example
Internal Quantum Efficiency

b)

Experiments are carried out on coupling light from a 1310 nm ELED-Edge emitting LED in multimode and single mode fibers. (i) At room temperature, when the ELED current is 120 mA, the voltage is 1.3 V and light power coupled into a 50 m multimode fiber with NA = 0.2 is 48 W. What is the overall efficiency? (ii) At room temperature, when the ELED current is 120 mA, the voltage is 1.3 V and light power coupled into a 9 m single mode fiber is 7 W. What is the overall efficiency?
a)

Solution

overall =
i)

Po 200 10 6 W = = 1.8x10-3 = 0.18 % IV (75 103 A)(1.5 V) P 48 10 6 W o = IV (120 10 3 A)(1.3 V) P 7 10 6 W o = IV (120 10 3 A)(1.3 V)
= 0.0307% = 0.0045%

b)

overall = overall =

ii)

Example

Solution