VN800S / VN800PT

HIGH SIDE DRIVER

TYPE VN800S VN800PT

I I

RDS(on) 135 m

IOUT 0.7 A

VCC 36 V

CMOS COMPATIBLE INPUT THERMAL SHUTDOWN I CURRENT LIMITATION I SHORTED LOAD PROTECTION I UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN I PROTECTION AGAINST LOSS OF GROUND I VERY LOW STAND-BY CURRENT I REVERSE BATTERY PROTECTION (*) DESCRIPTION The VN800S, VN800PT are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes. Active current limitation combined with thermal shutdown and BLOCK DIAGRAM

SO-8

PPAK

ORDER CODES
PACKAGE TUBE T&R

SO-8 PPAK

VN800S VN800PT

VN800S13TR VN800PT13TR

automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection. This device is especially suitable for industrial applications in norms conformity with IEC1131 (Programmable Controllers International Standard).

VCC

VCC CLAMP

OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION

GND Power CLAMP

DRIVER INPUT LOGIC CURRENT LIMITER OUTPUT

STATUS OVERTEMPERATURE DETECTION

(*) See note at page 7

July 2002

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VN800S / VN800PT
ABSOLUTE MAXIMUM RATING
Symbol VCC - VCC - IGND IOUT - IOUT IIN VIN VSTAT Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current Input Voltage Range DC Status Voltage Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT VESD - STATUS - OUTPUT Ptot EMAX EMAX Tj Tc Tstg Lmax - VCC Power Dissipation TC=25C Maximum Switching Energy (L=77.5mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=1.5A) Maximum Switching Energy (L=125mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=1.5A) Junction Operating Temperature Case Operating Temperature Storage Temperature Max Inductive Load (VCC=30V; ILOAD=0.5A; Tamb=100C; Rthcase>ambient25C/W) 4.2 121 195 Internally Limited - 40 to 150 - 55 to 150 2 Value SO-8 PPAK 41 - 0.3 - 200 Internally Limited -6 +/- 10 -3/+VCC + VCC 4000 4000 5000 5000 41.7 Unit V V mA A A mA V V V V V V W mJ mJ C C C H

CONNECTION DIAGRAM (TOP VIEW)

VCC VCC OUTPUT OUTPUT VCC 8 1 5 4 N.C. STATUS INPUT GND
5 4 3 2 1

OUTPUT STATUS INPUT GND

SO-8

PPAK

CURRENT AND VOLTAGE CONVENTIONS

IS

IIN INPUT ISTAT STATUS

VCC
IOUT OUTPUT GND VCC

VIN VSTAT IGND

VOUT

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THERMAL DATA
Symbol Rthj-case Rthj-lead Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-lead Thermal Resistance Junction-ambient Value SO-8 30 93 (*) PPAK 3 78 (**) Unit C/W C/W C/W

Max Max Max

(*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35 thick) connected to all VCC pins. (**) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35 thick).

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40C<Tj<150C, unless otherwise specified) POWER

Symbol VCC VUSD VOV RON Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 4 42 Max 36 5.5 135 10 1.5 270 20 3.5 2.6 1 0 50 5 3 Unit V V V m m A mA mA mA A A A

IOUT =0.5A; Tj=25C IOUT=0.5A Off State; VCC=24V; Tcase=25C On State; VCC=24V On State; VCC=24V; Tcase=100C VCC=VSTAT=VIN=VGND=24V VOUT=0V VIN=VOUT=0V VIN=VOUT=0V; Vcc=13V; Tj =125C VIN=VOUT=0V; Vcc=13V; Tj =25C

IS

Supply Current

ILGND IL(off1) IL(off2) IL(off3)

Output Current at turn-off Off State Output Current Off State Output Current Off State Output Current

SWITCHING (VCC=24V)
Symbol td(on) td(off) dVOUT/ dt(on) dVOUT/ dt(off) Parameter Turn-on Delay Time Turn-off Delay Time Turn-on Voltage Slope Test Conditions RL=48 from VIN rising edge to VOUT=2.4V RL=48 from VIN falling edge to VOUT=21.6V RL=48 from VOUT=2.4V to VOUT=19.2V RL=48 from VOUT=21.6V to VOUT=2.4V Min Typ 10 40 See relative diagram See relative diagram Max Unit s s V/s

Turn-off Voltage Slope

V/s

INPUT PIN
Symbol VINL IINL VINH IINH VI(hyst) IIN Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Current Test Conditions VIN=1.25V VIN=3.25V 0.5 VIN=VCC=36V 200 Min 1 3.25 10 Typ Max 1.25 Unit V A V A V A

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VN800S / VN800PT
ELECTRICAL CHARACTERISTICS (continued) STATUS PIN
Symbol VSTAT ILSTAT CSTAT Parameter Test Conditions Status Low Output Voltage ISTAT=1.6 mA Status Leakage Current Normal Operation; VSTAT=VCC=36 V Status Pin Input Normal Operation; VSTAT= 5V Capacitance Min Typ Max 0.5 10 30 Unit V A pF

PROTECTIONS
Symbol TTSD TR Thyst TSDL Ilim Vdemag Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Condition DC Short Circuit Current Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 0.7 2 Max 200 Unit C C C s A V

Tj>Tjsh VCC=24V; RLOAD=10m IOUT=0.5 A; L=6mH

VCC-47 VCC-52 VCC-57

OVERTEMP STATUS TIMING VIN Tj>Tjsh

VSTAT tSDL tSDL

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VN800S / VN800PT
Switching time Waveforms

VOUT

80% dVOUT/dt(on) tr 10%

90% dVOUT/dt(off) tf t

VIN

td(on)

td(off)

TRUTH TABLE
CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage INPUT L H L H H L H L H L H OUTPUT L H L X X L L L L L L STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H

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VN800S / VN800PT
Figure 1: Peak Short Circuit Current Test Circuit
+VCC

10k
VCC

STATUS CONTROL UNIT GND INPUT RIN

OUTPUT

RL=10m

GND

Figure 2: Avalanche Energy Test Circuit

+VCC

10k
VCC

STATUS CONTROL UNIT GND INPUT RIN

OUTPUT

LOAD

GND

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VN800S / VN800PT
APPLICATION SCHEMATIC

VCC

5V Volt. Reg

Control & Diagnostic I/O

VCC 24VDC

Rprot
STATUSn

Rprot INPUTn BUS ASIC

OUTPUTn LOAD R

GND

L DGND

VGND

RGND

GND PROTECTION REVERSE BATTERY

NETWORK

AGAINST

Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / (IS(on)max). 2) RGND (VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the devices datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below).

Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. C I/Os PROTECTION: If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot ) in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.

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Figure 3: Waveforms

NORMAL OPERATION INPUT LOAD VOLTAGE STATUS UNDERVOLTAGE VUSDhyst VUSD INPUT LOAD VOLTAGE STATUS undefined

VCC

OVERVOLTAGE VCC<VOV VCC INPUT LOAD VOLTAGE STATUS VCC>VOV

Tj INPUT LOAD CURRENT STATUS

TTSD TR

OVERTEMPERATURE

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Off State Output Current
IL(off1) (A)
2.5 2.25 2 1.75 1.5 1.25 1 0.75 2 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 175 1 0 -50 -25 0 25 50 75 100 125 150 175

High Level Input Current

Iih (A)
8 7

Off state Vcc=36V Vin=Vout=0V

Vin=3.25V
6 5 4 3

Tc (C)

Tc (C)

Status Leakage Current

Ilstat (A)
0.1 0.09

ILIM Vs Tcase
Ilim (A)
2.5 2.25

Vstat=Vcc=36V
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 175

2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25

Vcc=24V Rl=10mOhm

25

50

75

100

125

150

175

Tc (C)

Tc (C)

On State Resistance Vs Tcase

Ron (mOhm)
400 350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175

On State Resistance Vs VCC

Ron (mOhm)
400 350

Iout=0.5A Vcc=8V; 13V; 36V

Iout=0.5A
300 250

Tc= 150C
200 150

Tc= 25C
100 50 0 5 10 15 20 25 30 35 40

Tc= - 40C

Tc (C)

Vcc (V)

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VN800S / VN800PT
Input High Level
Vih (V)
3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 -50 -25 0 25 50 75 100 125 150 175

Input Low Level

Vil (V)
2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Hysteresis Voltage

Vhyst (V)
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 175

Overvoltage Shutdown
Vov (V)
50 48 46 44 42 40 38 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Turn-on Voltage Slope

dVout/dt(on) (V/ms)
1600

Turn-off Voltage Slope

dVout/dt(off) (V/ms)
800 700

1
1400 1200 1000 800 600 400 200 0 -50 -25 0 25 50 75 100 125 150 175

Vcc=24V Rl=48Ohm

600 500 400 300 200 100 0 -50

Vcc=24V Rl=48Ohm

-25

25

50

75

100

125

150

175

Tc (C)

Tc (C)

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VN800S / VN800PT
PPAK Maximum turn off current versus load inductance

ILMAX (A) 10

A B

0.1 1 10 L(mH)
A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization

100

1000

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VN800S / VN800PT
SO-8 Maximum turn off current versus load inductance

ILMAX (A) 10

A B C

0.1 1 10 L(mH)
A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization

100

1000

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VN800S / VN800PT

SO-8 THERMAL DATA

SO-8 PC Board

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: 0.14cm2, 2cm2).

Rthj-amb Vs PCB copper area in open box free air condition

RTHj_amb (C/W)

SO8 at 2 pins connected to TAB

110 105 100 95 90 85 80 75 70 0 0.5 1 1.5 2 2.5

PCB Cu heatsink area (cm^2)

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VN800S / VN800PT

PPAK THERMAL DATA

PPAK PC Board

Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: 0.44cm2, 8cm2).

Rthj-amb Vs PCB copper area in open box free air condition

RTHj_amb (C/W)

90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10
PCB Cu heatsink area (cm^2)

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VN800S / VN800PT
SO-8 Thermal Impedance Junction Ambient Single Pulse

ZT H (C/W) 1000

100

0.5 cm2 2 cm2

10

0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000

Thermal fitting model of a single channel HSD in SO-8

Pulse calculation formula

Z TH = RTH + Z THtp ( 1 )
where

= tp T
0.14 0.24 1.2 4.5 21 16 58 0.00015 0.0005 7.50E-03 0.045 0.35 1.05 2

Thermal Parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)

Tj

C1

C2

C3

C4

C5

C6

R1

R2

R3

R4

R5

R6

Pd

28

T_amb

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VN800S / VN800PT
PPAK Thermal Impedance Junction Ambient Single Pulse

ZTH (C/W) 1000

100

0.44 cm2 6 cm2

10

0.1 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000

Thermal fitting model of a single channel HSD in PPAK

Pulse calculation formula

Z TH = R TH + Z THtp ( 1 )
where

= tp T
0.44 0.04 0.25 0.3 2 15 61 0.0008 0.007 0.02 0.3 0.45 0.8 6

Thermal Parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)

Tj

C1

C2

C3

C4

C5

C6

R1

R2

R3

R4

R5

R6

Pd

24

T_amb

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VN800S / VN800PT

SO-8 MECHANICAL DATA

mm. MIN. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 3.8 0.4 4 1.27 0.6 8 (max.) 0.8 1.2 0.031 0.047 0.14 0.015 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5 6.2 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019

DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S L1

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VN800S / VN800PT

PPAK MECHANICAL DATA

DIM. A A1 A2 B B2 C C2 D1 D E E1 e G G1 H L2 L4 R V2 Package Weight 0 Gr. 0.3 0.60 0.2 8 4.90 2.38 9.35 0.8 6.00 6.40 4.7 1.27 5.25 2.70 10.10 1.00 1.00 MIN. 2.20 0.90 0.03 0.40 5.20 0.45 0.48 5.1 6.20 6.60 TYP MAX. 2.40 1.10 0.23 0.60 5.40 0.60 0.60

P032T1

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VN800S / VN800PT
SO-8 TUBE SHIPMENT (no suffix)

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

100 2000 532 3.2 6 0.6

TAPE AND REEL SHIPMENT (suffix 13TR) REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VN800S / VN800PT
PPAK TUBE SHIPMENT (no suffix)
A C

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

75 3000 532 6 21.3 0.6

TAPE AND REEL SHIPMENT (suffix 13TR) REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 8 1.5 1.5 7.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape No components 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min Components No components

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VN800S / VN800PT

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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