EE682 - Group Project Design: Prof. Ali Keyhani Lecture On Design of A Static Switching
EE682 - Group Project Design: Prof. Ali Keyhani Lecture On Design of A Static Switching
Transistor selection:
D62T: 400-500 V switch, frequency of switching = 100 kHz
Assumptions:
• Off-state losses are small;
• Base drive losses are not very small, but they are
considerable smaller than that of on-state;
• Base driver losses are neglected;
• Switch is on for a long time.
Assumptions
1. No second breakdown limitation
2. Negligible off-state losses
3. Negligible base drive losses
4. VCE(sat) = 1.2 V, IB1 = 20 A
IB1 is the on-state drive current (see data sheets) with
junction temperature of 150oC
On-state Circuit
1.2 V
C E
B
125 V 1.3 Ω
125 − 1.2
PT = ×1.2 = 114.28W
1.3
On-state Circuit
From data sheet, the thermal resistance from junction-to-sink
for double-sided cooling is 0.14 oC/W
The junction-to-sink temperature different is
Fig 2P-2 indicates that with two of the smaller heat sinks,
curve (b) for double-sided cooling, the sink-to-ambient
temperature rise would be approximately 80oC with 114.28-
W dissipation in switch.
Temperature rise
Therefore with an ambient temperature of 54oC, the junction
temperature (Tj) is
T j = TA + ∆T js + ∆TsA
= 54 o + 16 o + 80 o = 150o C
T j ≤ 150 Co
Design OK.
Switching Losses
Assume an on-period of 10 ms and a 50-percent duty cycle.
ton
PT = VCE ( sat ) × I on ×
T
1
= 1.2 × 95.23 × = 57.14W
2
The junction-to-sink “average” temperature is