0% found this document useful (0 votes)
177 views6 pages

SCR in Construction and Applications

A silicon-controlled rectifier (SCR) is a solid state semiconductor device that controls current flow through its terminals. It consists of four alternating layers of P-type and N-type semiconductor materials. The SCR operates in two modes - normally off where it restricts current, and turns on when the gate voltage exceeds a threshold to allow current conduction. SCRs are commonly used in power control applications such as motor speed control and light dimming.

Uploaded by

Diogo Rodrigues
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
177 views6 pages

SCR in Construction and Applications

A silicon-controlled rectifier (SCR) is a solid state semiconductor device that controls current flow through its terminals. It consists of four alternating layers of P-type and N-type semiconductor materials. The SCR operates in two modes - normally off where it restricts current, and turns on when the gate voltage exceeds a threshold to allow current conduction. SCRs are commonly used in power control applications such as motor speed control and light dimming.

Uploaded by

Diogo Rodrigues
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd

DIPLOMA IN ELECTRICAL ENGG.

SEMESTER-5
POWER ELECTRONICS
Ans 1
A silicon-controlled rectifier (or semiconductor-controlled rectifier) is a four-layer solid
statedevice that controls current. The name "silicon controlled rectifier" or SCR is General Electric's
trade name for a type of thyristor. The SC !as developed "y a team of po!er en#ineers led "y
Gordon $all and commerciali%ed "y &ran' (. ")ill" Gut%!iller in *+,-.
Contents
.hide/
* Construction of SC
0 1odes of operation
2 everse )ias
3 Thyristor turn on
methods
, Application of SCs
4 See also
- E5ternal lin's
6 1anufacturers
+ eferences
.edit/Construction of SC
An SC consists of four layers of alternatin# 7 and 8 type semiconductor materials. Silicon is used as
the intrinsic semiconductor9 to !hich the proper dopants are added. The :unctions are either diffused
or alloyed. The planar construction is used for lo! po!er SCs (and all the :unctions are diffused).
The mesa type construction is used for hi#h po!er SCs. ;n this case9 :unction <0 is o"tained "y the
diffusion method and then the outer t!o layers are alloyed to it9 since the 7878 pellet is re=uired to
handle lar#e currents. ;t is properly "raced !ith tun#sten or moly"denum plates to provide #reater
mechanical stren#th. >ne of these plates is hard soldered to a copper stud9 !hich is threaded for
attachment of heat sin'. The dopin# of 7878 !ill depend on the application of SC9 since its
characteristics are similar to those of the thyratron. Today9 the term thyristor applies to the lar#er
family of multilayer devices that e5hi"it "ista"le state-chan#e "ehaviour9 that is9 s!itchin# either >8 or
>&&.
The operation of a SC and other thyristors can "e understood in terms of a pair of ti#htly
coupled "ipolar :unction transistors9 arran#ed to cause the self-latchin# action?
.edit/1odes of operation
;n the normal "off" state9 the device restricts current to the lea'a#e current. (hen the #ate-to-
cathode volta#e e5ceeds a certain threshold9 the device turns "on" and conducts current. The
device !ill remain in the "on" state even after #ate current is removed so lon# as current throu#h
the device remains a"ove the holdin# current. >nce current falls "elo! the holdin# current for an
appropriate period of time9 the device !ill s!itch "off". ;f the #ate is pulsed and the current
throu#h the device is "elo! the holdin# current9 the device !ill remain in the "off" state.
;f the applied volta#e increases rapidly enou#h9 capacitive couplin# may induce enou#h char#e
into the #ate to tri##er the device into the "on" state@ this is referred to as "dvAdt tri##erin#." This is
usually prevented "y limitin# the rate of volta#e rise across the device9 perhaps "y usin#
a snu""er. "dvAdt tri##erin#" may not s!itch the SC into full conduction rapidly and the partially-
tri##ered SC may dissipate more po!er than is usual9 possi"ly harmin# the device.
SCs can also "e tri##ered "y increasin# the for!ard volta#e "eyond their rated "rea'do!n
volta#e (also called as "rea' over volta#e)9 "ut a#ain9 this does not rapidly s!itch the entire
device into conduction and so may "e harmful so this mode of operation is also usually avoided.
Also9 the actual "rea'do!n volta#e may "e su"stantially hi#her than the rated "rea'do!n
volta#e9 so the e5act tri##er point !ill vary from device to device. This device is #enerally used in
s!itchin# applications.
.edit/everse )ias
SC are availa"le !ith or !ithout reverse "loc'in# capa"ility. everse "loc'in# capa"ility adds to
the for!ard volta#e drop "ecause of the need to have a lon#9 lo! doped 7* re#ion. Bsually9 the
reverse "loc'in# volta#e ratin# and for!ard "loc'in# volta#e ratin# are the same. The typical
application for reverse "loc'in# SC is in current source inverters.
SC incapa"le of "loc'in# reverse volta#e are 'no!n as asymmetrical SCR9
a""reviated ASCR. They typically have a reverse "rea'do!n ratin# in the *C's of volts. ASC are
used !here either a reverse conductin# diode is applied in parallel (for e5ample9 in volta#e
source inverters) or !here reverse volta#e !ould never occur (for e5ample9 in s!itchin# po!er
supplies or DC traction choppers).
Asymmetrical SC can "e fa"ricated !ith a reverse conductin# diode in the same pac'a#e.
These are 'no!n as CT9 for reverse conductin# thyristor.
.edit/Thyristor turn on methods
*. for!ard volta#e tri##erin#
0. #ate tri##erin#
2. dvAdt tri##erin#
3. temperature tri##erin#
,. li#ht tri##erin#
&or!ard volta#e tri##erin# occurs !hen the anode-cathode for!ard volta#e is increased !ith the
#ate circuit opened. This is 'no!n as avalanche "rea'do!n9 durin# !hich :unction :0 !ill
"rea'do!n. At sufficient volta#es9 the thyristor chan#es to its on state !ith lo! volta#e drop and
lar#e for!ard current. ;n this case9 <* and <2 are already for!ard "iased.
.edit/Application of SCs
SCs are mainly used in devices !here the control of hi#h po!er9 possi"ly coupled !ith hi#h
volta#e9 is demanded. Their operation ma'es them suita"le for use in medium to hi#h-volta#e AC
po!er control applications9 such as lamp dimmin#9 re#ulators and motor control.
SCs and similar devices are used for rectification of hi#h po!er AC in hi#h-volta#e direct
current po!er transmission. They are also used in the control of !eldin# machines9 mainly 1TA(
and GTA( processes.
Ans 2
A unijunction transistor (UJT) is an electronic semiconductor device that has only one :unction.
The B<T has three terminals? an emitter (E) and t!o "ases ()* and )0). The "ase is formed "y
li#htly doped n-type "ar of silicon. T!o ohmic contacts )* and )0 are attached at its ends. The
emitter is of p-type and it is heavily doped. The resistance "et!een )* and )09 !hen the emitter is
open-circuit is called inter"ase resistance.
There are three types of unijunction transistors?
The ori#inal uni:unction transistor9 or B<T9 is a simple device that is essentially a "ar of 8
typesemiconductor material into !hich 7 type material has "een diffused some!here alon# its
len#th9 definin# the device parameter . The 080434 is the most commonly used version of the
B<T.
The complementary uni:unction transistor9 or CB<T9 that is a "ar of 7
type semiconductormaterial into !hich 8 type material has "een diffused some!here alon# its
len#th9 definin# the device parameter . The 084**3 is one version of the CB<T.
The programmable unijunction transistor9 or 7BT9 is a close cousin to the thyristor. Ei'e
the thyristor it consists of four 7-8 layers and has an anode and a cathode connected to the first
and the last layer9 and a #ate connected to one of the inner layers. They are not directly
interchan#ea"le !ith conventional B<Ts "ut perform a similar function. ;n a proper circuit
confi#uration !ith t!o "pro#rammin#" resistors for settin# the parameter 9 they "ehave li'e a
conventional B<T. The 084C0- is an e5ample of such a device.
The B<T is "iased !ith a positive volta#e "et!een the t!o "ases. This causes a potential drop alon#
the len#th of the device. (hen the emitter volta#e is driven appro5imately one diode volta#e a"ove
the volta#e at the point !here the 7 diffusion (emitter) is9 current !ill "e#in to flo! from the emitter into
the "ase re#ion. )ecause the "ase re#ion is very li#htly doped9 the additional current (actually
char#es in the "ase re#ion) causes conductivity modulation !hich reduces the resistance of the
portion of the "ase "et!een the emitter :unction and the )0 terminal. This reduction in resistance
means that the emitter :unction is more for!ard "iased9 and so even more current is in:ected. >verall9
the effect is ane#ative resistance at the emitter terminal. This is !hat ma'es the B<T useful9
especially in simple oscillator circuits.
Bni:unction transistor circuits !ere popular in ho""yist electronics circuits in the *+4Cs and *+-Cs
"ecause they allo!ed simple oscillators to "e "uilt usin# :ust one active device. &or e5ample9 they
!ere used for rela5ation oscillators in varia"le-rate stro"e li#hts.
.*/
Eater9 as inte#rated circuits "ecame
more popular9 oscillators such as the ,,, timer ;C "ecame more commonly used.
;n addition to its use as the active device in rela5ation oscillators9 one of the most important
applications of B<Ts or 7BTs is to tri##erthyristors (SC9 T;AC9 etc.). ;n fact9 a DC volta#e can "e
used to control a B<T or 7BT circuit such that the "on-period" increases !ith an increase in the DC
control volta#e. This application is important for lar#e AC current control.
B<Ts can also "e used to measure ma#netic flu5. The hall effect modulates the volta#e at the 78
:unction. This affects the fre=uency of B<T rela5ation oscillators.
.0/
This only !or's !ith B<Ts. 7BTs
do not e5hi"it this phenomenon.
Ans 3
Three phase inverters
2-phase inverter !ith !ye connected load
Three-phase inverters are used for varia"le-fre=uency drive applications and for hi#h po!er
applications such as $FDC po!er transmission. A "asic three-phase inverter consists of three sin#le-
phase inverter s!itches each connected to one of the three load terminals. &or the most "asic control
scheme9 the operation of the three s!itches is coordinated so that one s!itch operates at each 4C
de#ree point of the fundamental output !aveform. This creates a line-to-line output !aveform that has
si5 steps. The si5-step !aveform has a %ero-volta#e step "et!een the positive and ne#ative sections
of the s=uare-!ave such that the harmonics that are multiples of three are eliminated as descri"ed
a"ove. (hen carrier-"ased 7(1 techni=ues are applied to si5-step !aveforms9 the "asic overall
shape9 or envelope9 of the !aveform is retained so that the 2rd harmonic and its multiples are
cancelled.
2-phase inverter s!itchin# circuit sho!in# 4-step s!itchin# se=uence and !aveform of volta#e "et!een
terminals A and C (0
2
-0 states)
To construct inverters !ith hi#her po!er ratin#s9 t!o si5-step three-phase inverters can "e connected
in parallel for a hi#her current ratin# or in series for a hi#her volta#e ratin#. ;n either case9 the output
!aveforms are phase shifted to o"tain a *0-step !aveform. ;f additional inverters are com"ined9 an
*6-step inverter is o"tained !ith three inverters etc. Althou#h inverters are usually com"ined for the
purpose of achievin# increased volta#e or current ratin#s9 the =uality of the !aveform is improved as
!ell.
[edit!istory
[edit "arly inverters
&rom the late nineteenth century throu#h the middle of the t!entieth century9 DC-to-AC po!er
conversion !as accomplished usin# rotary converters or motor-#enerator sets (1-G sets). ;n the early
t!entieth century9 vacuum tu"es and #as filled tu"es "e#an to "e used as s!itches in inverter circuits.
The most !idely used type of tu"e !as the thyratron.
The ori#ins of electromechanical inverters e5plain the source of the term inverter. Early AC-to-DC
converters used an induction or synchronous AC motor direct-connected to a #enerator (dynamo) so
that the #enerator's commutator reversed its connections at e5actly the ri#ht moments to produce DC.
A later development is the synchronous converter9 in !hich the motor and #enerator !indin#s are
com"ined into one armature9 !ith slip rin#s at one end and a commutator at the other and only one
field frame. The result !ith either is AC-in9 DC-out. (ith an 1-G set9 the DC can "e considered to "e
separately #enerated from the AC@ !ith a synchronous converter9 in a certain sense it can "e
considered to "e "mechanically rectified AC". Given the ri#ht au5iliary and control e=uipment9 an 1-G
set or rotary converter can "e "run "ac'!ards"9 convertin# DC to AC. $ence an inverter is an inverted
converter.
.-/.6/
Ans 5
An integrated circuit or monolithic integrated circuit (also referred to as #C9 chip9 ormicrochip) is
an electronic circuit manufactured "y the patterned diffusion of trace elements into the surface of a
thin su"strate of semiconductor material. Additional materials are deposited and patterned to form
interconnections "et!een semiconductor devices.
;nte#rated circuits are used in virtually all electronic e=uipment today and have revolutioni%ed the
!orld of electronics. Computers9 mo"ile phones9 and other di#ital appliances are no! ine5trica"le
parts of the structure of modern societies9 made possi"le "y the lo! cost of production of inte#rated
circuits.
;Cs !ere made possi"le "y e5perimental discoveries sho!in# that semiconductor devices could
perform the functions of vacuum tu"es and "y mid-0Cth-century technolo#y advancements
insemiconductor device fa"rication. The inte#ration of lar#e num"ers of tiny transistors into a small
chip !as an enormous improvement over the manual assem"ly of circuits usin# discrete electronic
components. The inte#rated circuit's mass production capa"ility9 relia"ility9 and "uildin#-"loc'
approach to circuit desi#n ensured the rapid adoption of standardi%ed ;Cs in place of desi#ns usin#
discrete transistors.
There are t!o main advanta#es of ;Cs over discrete circuits? cost and performance. Cost is lo!
"ecause the chips9 !ith all their components9 are printed as a unit "y photolitho#raphy rather than
"ein# constructed one transistor at a time. &urthermore9 much less material is used to construct a
pac'a#ed ;C die than to construct a discrete circuit. 7erformance is hi#h "ecause the components
s!itch =uic'ly and consume little po!er (compared to their discrete counterparts) as a result of the
small si%e and close pro5imity of the components. As of 0CC49 typical chip areas ran#e from a fe!
s=uare millimeters to around 2,C mm
0
9 !ith up to * million transistors per mm
0
.
Classification
A C1>S 3CCC ;C in a D;7
;nte#rated circuits can "e classified into analo#9 di#ital and mi5ed si#nal ("oth analo# and di#ital on
the same chip).
Di#ital inte#rated circuits can contain anythin# from one to millions of lo#ic #ates9 flip-
flops9multiple5ers9 and other circuits in a fe! s=uare millimeters. The small si%e of these circuits
allo!s hi#h speed9 lo! po!er dissipation9 and reduced manufacturin# cost compared !ith "oard-level
inte#ration. These di#ital ;Cs9 typically microprocessors9 DS7s9 and micro controllers9 !or' usin#
"inary mathematics to process "one" and "%ero" si#nals.
Analo# ;Cs9 such as sensors9 po!er mana#ement circuits9 and operational amplifiers9 !or' "y
processin# continuous si#nals. They perform functions li'e amplification9 active filterin#9demodulation9
and mi5in#. Analo# ;Cs ease the "urden on circuit desi#ners "y havin# e5pertly desi#ned analo#
circuits availa"le instead of desi#nin# a difficult analo# circuit from scratch.
;Cs can also com"ine analo# and di#ital circuits on a sin#le chip to create functions such as AAD
converters and DAA converters. Such circuits offer smaller si%e and lo!er cost9 "ut must carefully
account for si#nal interference.

You might also like