AP9T15GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Capable of 2.5V gate drive
Single Drive Requirement
RoHS Compliant
BVDSS
20V
RDS(ON)
50m
ID
12.5A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
VGS
Gate-Source Voltage
16
ID@TC=25
Continuous Drain Current, V GS @ 4.5V
12.5
ID@TC=100
Continuous Drain Current, V GS @ 4.5V
60
12.5
IDM
Pulsed Drain Current
PD@TC=25
Total Power Dissipation
0.1
W/
TSTG
Linear Derating Factor
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
10
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
200908052-1/4
AP9T15GH/J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
BVDSS
Drain-Source Breakdown Voltage
BVDSS/Tj
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
0.02
V/
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
50
VGS=2.5V, ID=5.2A
80
VDS=VGS, ID=250uA
0.5
1.5
VDS=5V, ID=10A
10
Drain-Source Leakage Current (Tj=25 C)
VDS=20V, VGS=0V
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=16V ,VGS=0V
25
uA
Gate-Source Leakage
VGS=16V
100
nA
ID=10A
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
nC
td(on)
Turn-on Delay Time
VDS=10V
ns
tr
Rise Time
ID=10A
55
ns
td(off)
Turn-off Delay Time
RG=3.3,VGS=5V
10
ns
tf
Fall Time
RD=1
ns
Ciss
Input Capacitance
VGS=0V
360
580
pF
Coss
Output Capacitance
VDS=20V
70
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
50
pF
Rg
Gate Resistance
f=1.0MHz
1.67
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=10A, VGS=0V
1.3
trr
Reverse Recovery Time
IS=10A, VGS=0V,
17
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T15GH/J
40
50
T C = 150 o C
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
5.0V
4.5V
40
30
3.5V
20
2.5V
30
5.0V
4.5V
20
3.5V
10
2.5V
10
V G =1.5V
V G =1.5V
0
0
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
45
I D = 5.2 A
43
I D =6A
V G =4.5V
1.6
Normalized RDS(ON)
T C =25 o C
RDS(ON) (m )
V DS , Drain-to-Source Voltage (V)
41
39
37
1.4
1.2
1.0
0.8
35
0.6
33
0
-50
10
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
Normalized VGS(th) (V)
IS(A)
T j =150 o C
T j =25 o C
1.5
1.0
0.5
2
0.0
0
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9T15GH/J
f=1.0MHz
14
1000
I D =10A
C iss
V DS =10V
V DS =12V
V DS =16V
10
C (pF)
VGS , Gate to Source Voltage (V)
12
100
C oss
C rss
10
0
10
12
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
100
100us
ID (A)
10
1ms
10ms
100ms
DC
T c =25 C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
0.1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
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