RF POWER LDMOS TECHNOLOGY
26 - 28 Vdd
MAIN TECHNOLOGICAL FEATURES
Source Back Electrode
Locos Field Oxide Th. 2.4 m
Lch Ranging from 1.5 down to 0.4 m
Self Alligned CoSi2/Poly Gate Fingers
(Rs=2 /square)
Barrier/Al Alloy Metallization
From HF up to 2 GHz
Drain
Finger
Metal
n+
Source
CoSi2
P+
Sinker
n- Drain
p- Epi
Dielectric
p+ Body
p+
Sub.
Source Back Electrode
2 m
Schematic and TEM Cross Sections
SD57045 45 W Device
May 1999
LDMOS Electrical Comparison
Parameters
Pout [W]
Pgain [db]
[%]
IMD3 [-dbc]
Coss [pF]
SD57045
STMicrelectronics
MRF183
MOTOROLA
SD57060
STMicrelectronics
MRF184
MOTOROLA
45
15
40
28
40
45
11.5
33
28
38
60*
14*
60*
N.A.
47
60*
11.5*
53*
N.A.
44
73
82
84
83
4.5
2.4
4.3
65
65
65
65
@ Vds=28V Vgs=0 f=1MHz
Ciss [pF]
@ Vds=28V Vgs=0 f=1MHz
Crss [pF]
@ Vds=28V Vgs=0 f=1MHz
BVdss min. [Volt]
PEP conditions: @ F=945 and 945.1 MHz Idq=250 mA Vdd=28V
* measured under CW conditions @ F=945MHz Idq=100 mA Vdd=28V)
A complete Products Family is under development up to 2GHz
SD57045 TYPICAL DATA @ 945 MHz
Power Gain vs Output Power
Efficiency vs Output Power
18
Pgain (dB)
250 mA
450 mA
Efficiency (%)
Idq = 75 mA
150 mA
17
16
15
14
13
60
50
40
30
Idq = 250mA
12
1
10
100
10
20
30
40
50
60
70
Pout (W)
Pout (W)
IMD3 vs Output Power
Capacitance vs Drain-Source voltage
180
IMD3 (dB)
250 mA
450 mA
Capacitance (pF)
Idq =75 mA
150 mA
-20
-30
-40
-50
Crss
150
Coss
Ciss
120
90
60
30
0
10
Pout, PEP (W)
100
10
15
20
Drain-Source Voltage (V)
25
30
SD57045 Test Fixture
part A: IF/Duplex
back view
NOKIA
6110
front view
part B: RF Side
part C: Interf/Supply
part D: DSP/uP
BAS70
Siemens
Schottky diode
TCO986H
Toyocom
VTCXO 13 MHz
BFR93A
Siemens
Discrete driver
amplifier
Power amplifier
( 2 stages )
Printed coupler
TX RF SAW filter
IL028
FDK
UHF VCO
DA-NL
NTK
2nd IF dielectric filter
BFR93A
Siemens
VHF VCO
discrete
RX RF SAW filter
RF01A
Philips
Front end
B4570
Siemens
IF SAW filter
Antenna Connector
DFY2R902
Murata
Duplexer
SAVE battery contact
PLUSSA
ST
IF Part + synthesizer + PA
conttrol
SIM connector
NTK
935 - 960 Mhz
71 MHz
13 MHz
I RX
AGC
Siemens
RF01A
58 MHz
B4570
1006 -
Q RX
/ 4
1031 MHz
232 MHz
PLL 1
PLL 2
brf93a
M ur a t a
FDK
DFY2R902
I L028
13 MHz
/ 2
116 MHz
brf93a
ITX
PA
driver
116 MHz
890 - 915 Mhz
det ect i o n
QTX
PA
PLU S S A
cont r ol
0.9GHz Low Noise Amplifier
50
BiCMOS6M process with planar inductors
Wide dynamic range
Low Noise current-mode adaptive bias scheme
Dual linearity mode (Low/High IPi)
Performances:
Simulated
Supply Voltage
Current (Low /High IPi)
2.75V
10 mA / 19 mA
Measured
Preliminary (*)
2.75V
11.9 mA / 21.8 mA
Power Gain (Low Ipi/High IPi)
15 dB / 15.5 dB
11.5 dB/ 12dB
Noise Figure (Low IPi)
Input Impedance
Output Impedance
1dBibCp (Low/ High IPi)
1.5 dB
50 Ohm
50 Ohm
-10dBm/ -4dBm
2 dB
-7 dBm / -1 dBm
(*) RF Socket TQFP48 effect to be deembedded
Matching
Network
Matching
Network
LNA
50
High Gain Mode
Low Gain Mode
ON board assy: LNA+MIXER in BCMOS 5
cooperazione UNI PAVIA/ST (Progetto MIRA)
E-GSM/DCS DUAL BAND RADIO F.E.
Technology : HSB2 - 3ML
Package : TQFP44
Die Area 2.7 x 3.7 mm
DECT Radio Chip Set
Digital Base Band
RADIO
RX DATA
TRANSCEIVER
LNA
ARM 7,
SAPPHISE,
DSP ...
ANALOG
FRONT
END
TX DATA
RSSI
GSMK FILTER
PA
Mono Chip
Radio
Base Band
Processor
RFDECT Application Board
Saw Filter
Post
Discriminator
Filter
RF Input
RF Output
Loop Filter
STARMAN Satellite Radio
Chip Set
Indoor
Antenna
Outdoor
Antenna
IIC
SDA
SCL
LNA
RN
IIC
IIC
RP
M_CLK
RF
Front End
Q1
SCK
SDI
Channel
Decoder
AGC
BIT_EN
MPEG
Decoder
SDO
SCKT
DAC
LRCKT
PLL
OCLK
Q2
LOCK
IF SAW
Filter
IIC
Ext
Tank
Ext
Tank
DO_EN
DOI
DOSCLK
STARMAN Radio Block Diagram
GAIN
CONTROL
RF 1452~1492MHz
IF1 to IF2
MIXER
RF MIXER
IF2
BUFFER
IFout 0.6~3.1MHz
LNA
IF1 BUFFER
VGA
flo2
flo1
fref2
CHARGE
PUMP
1st
PLL
PHASE
DETECTOR
CHARGE
PHASE
VCO
DETECTOR PUMP
fref1
:K
:N
2nd
PLL
:M
PROG.
DIVIDER
CRYSTAL
OSCILLATOR
STARMAN Satellite Radio
Measurement of the Phase Noise of the Oscillator
C
-H
81
2S
. S
0p
0ect
3dB
r um
10dB
/R
E
F0dB
m
- 99. 75kH
z
M
kr
H
ld
R
B
W
#10H
zV
B
W
10H
zA
T
N
10dB
SW
P24. 57sec
C
E
N
T
E
R
962. 5kH
zSPA
N
200kH
z
RF= 1201 MHz, Span = 200 KHz, RBW = 10 Hz
Phase noise = - 90 dBc /Hz @ 100 KHz
STARMAN Satellite Radio
Chip Layout - HSB2 Technology
RF VCOs
RF LNA, mixer
I2CBUS int.
PRESCALER +
MUX
Prog. Counter
IF VCO
VGA
STARMAN Application Board
GPS System
ST chipset
STB5600
ST20-GP1
GPS Radio FE
GPS Microprocessor
SRAM
ROM
GPS RADIO/ IF/DIGITAL CHIP-SET
L1 @1575.42 MHz
LNA
ST20GP6
IF
filter
ACTIVE ANTENNA
20MHz
12 channel
GPS
Hardware
DSP
filter
D
M
GPS IF
IF AMP
RF AMP
BUFF
Low power
controller
CK
Clock
16 MHz
/5
M
STB5600
1555 MHz
filter
Local
Oscillator
BUFF
LO BUFF
80 MHz
Real time
clock/calendar
Programmable
memory
interface
64K
SRAM
128K
mask ROM
ST20
CPU
Interrupt
controller
Serial
communication
2 UART (ASC)
Parallel
input/output
Diagnostic
control unit
Test
access port
16
GPS Board
RF Section
Digital Section
Large as a credit card (mm 90x50)
A Path Recorded in Catania
with the GPS
Tunnel
Mean value of satellites tracked: 6
Percentage of 3D Fix : 70.4%
Percentage of 2D Fix : 28.2%
Percentage of NO Fix : 1.4%
Mean value of DOP : 2
Tunnel
Conclusioni
Rapida crescita del mercato dei C.I. RF spinta dalla crescente
domanda nel settore wireless
Nuove applicazioni (multistandard, UMTS, DVS, ecc.) richiedono lo
sviluppo di nuovi materiali, substrati, package e maggiori integrazioni di
funzioni
Evoluzione tecnologica per C.I. RF piu'lenta che per VLSI
(prestazioni, effetti parassiti, aspetti CAD, verifica ...)
Focalizzazione sull'integrazione di componenti passivi integrati di alta
qualita' per ridurre consumi/costi
La complessita' del panorama applicativo (standard/sistemi) richiede
una varieta' di conoscenze specifiche che ben si adattano alla
esperienza ed agli interessi del mondo accademico
Soddisfacenti i risultati ottenuti ed in crescita l'attivita' di
collaborazione tra i gruppi di ricerca universitari (PV, CT, MI, BO, PI,
ecc.) ed STMicroelectronics
