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Transistors Applications

This document discusses transistor construction and configurations. It describes the basic bipolar junction transistor as a three-layer semiconductor device with emitter, base and collector terminals. Common-base, common-emitter and common-collector configurations are examined through their input/output characteristics and operating principles. Key transistor parameters such as alpha, beta and the effects of biasing circuits are analyzed through examples applying Kirchhoff's laws. Transistor regions of operation and the use of load lines to determine operating points are also covered.

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Shahir Afif Islam
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
289 views

Transistors Applications

This document discusses transistor construction and configurations. It describes the basic bipolar junction transistor as a three-layer semiconductor device with emitter, base and collector terminals. Common-base, common-emitter and common-collector configurations are examined through their input/output characteristics and operating principles. Key transistor parameters such as alpha, beta and the effects of biasing circuits are analyzed through examples applying Kirchhoff's laws. Transistor regions of operation and the use of load lines to determine operating points are also covered.

Uploaded by

Shahir Afif Islam
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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KMEM4110

TRANSISTORS & APPLICATIONS


Bipolar Junction Transistors
Chapter 5

TRANSISTOR CONSTRUCTION

Transistor is a three-layer semiconductor device.


There are two types of transistors: pnp
transistor & npn transistor
The terminals are labeled:

Fig 1: pnp
and npn

E Emitter
B Base
C Collector

Chapter 5

COMMON-BASE CONFIGURATION

The base is common to both


input (emitter-base) junction and
output (collector-base) junction of
the transistor
Recall: The arrow in the diode
symbol defined the direction of
conduction for conventional
current.
For transistor: The arrow in the
graphic symbol defines the
direction of emitter current
(conventional flow) through the
device

Fig 2: Notation and symbols used with


the common-base configuration.

Chapter 5

COMMON-BASE CONFIGURATION
Output Characteristics

Input Characteristics

The curve shows the relationship


between input current (IE) to input
voltage (VBE) for three output
voltage (VCB) levels.

Fig 3: Input characteristics for common-base


transistor amplifier

The graph demonstrates the


output current (IC) to an output
voltage (VCB) for various levels of
input current (IE).

Fig 4: Output characteristics for common-base


transistor amplifier

Chapter 5

OPERATING REGIONS
Active
Operating range of the amplifier.
Cutoff
The amplifier is basically off. There is
voltage, but little current.
Saturation
The amplifier is fully on. There is current,
but little voltage.

APPROXIMATIONS
Emitter and collector currents:
Base-emitter voltage:

IC I E
VBE 0.7 V (for Silicon)

Chapter 5

ALPHA ()

Alpha () is the ratio of IC to IE :


IC
dc
IE

Ideally: = 1
In reality: falls somewhere between 0.9 and 0.998

Chapter 5

COMMON-EMITTER CONFIGURATION

The emitter is common to both input (baseemitter) and output (collector-emitter) circuits.

The input is applied to the base.

The output is taken from the collector

Common-emitter amplifier currents:


Ideal Currents
I E = IC + IB

IC = IE

Chapter 5

COMMON-EMITTER CHARACTERISTICS
Collector Characteristics

Base Characteristics

Chapter 5

BETA ()
represents the amplification factor of a transistor.
dc

IC
IB

Relationship between amplification factors and

is particularly important parameter because it provides a direct link between


current levels of the input and output circuits for a common-emitter
configuration
I C I B

IE ( 1)IB

Chapter 5

COMMON-COLLECTOR CONFIGURATION
The input is on the base
and the output is on the
emitter

Fig 5: Notation and symbols used with


the common-collector configuration.

Chapter 5

COMMON-COLLECTOR CONFIGURATION
For common-collector
configuration, the output
characteristics are similar
to those of the commonemitter configuration
except the vertical axis is

Output characteristics are a


plot of versus for a
range of values of

Chapter 5

DC BIASING - BJTs
Biasing: Application of dc voltages
to establish a fixed level of current
and voltage.
For transistor amplifiers, the resulting
dc current and voltage establish an
operating point on the
characteristics that define the region
that will be employed for
amplification of the applied signals.
Operating point: Q-point

Fig 6: Various operating points within the


limits of operation of a transistor.

Chapter 5

THE THREE OPERATING REGIONS


Operation in the cutoff, saturation and linear regions of the BJT characteristics
are provided as follows:
Active or Linear Region Operation
BaseEmitter junction is forward biased
BaseCollector junction is reverse biased
Cutoff Region Operation
BaseEmitter junction is reverse biased

Saturation Region Operation


BaseEmitter junction is forward biased
BaseCollector junction is forward biased

Chapter 5

FIXED-BIAS CONFIGURATION
The fixed-bias circuit of Fig 7 is
the simplest transistor dc bias
configuration.
Even though the network employs
an npn transistor, equations and
calculations apply equally well to
a pnp transistor configuration by
changing all current directions and
voltage polarities.
For dc analysis: the network can
be isolated from the indicated ac
levels by replacing the capacitors
with an open-circuit equivalent

Fig 7: Fixed-bias circuit.

Chapter 5

THE BASE-EMITTER LOOP


From Kirchhoffs voltage law:
+ = 0
Note the polarity of the voltage drop
across as established by the indicated
direction of
Solving for base current:
VCC VBE
IB
RB

Because and are constant, the


selection of sets the level of base
current for the operating point.

Fig 8: Base-emitter loop.

Chapter 5

COLLECTOR-EMITTER LOOP
Collector current:
IC IB

Changing to any level will not affect the


level of or as long as we remain in
the active region of the device.
From Kirchhoffs voltage law:
VCE VCC IC RC

: voltage from collector to emitter


and : voltages from collector and
emitter to ground

Fig 9: Collector-emitter loop.

Chapter 5

SATURATION
When the transistor is operating in saturation, current through the transistor is
at its maximum possible value.
To know the approximate maximum collector current (saturation level), insert
short circuit equivalent between collector and emitter of the transistor.
VCE 0 V

Resulting saturation current for fixed-bias configuration:


V
ICsat CC
R
C

Chapter 5

LOAD LINE ANALYSIS


The load line end points are:
ICsat
IC = VCC / RC
VCE = 0 V
VCEcutoff
VCE = VCC
IC = 0 mA
The Q-point is the operating point
where the value of sets the
value of
Fig 10: Fixed-bias load line.

Chapter 5

EFFECT OF AND ON THE Q-POINT

Fig 11: Effect of lower values of on the


load line and the Q-point.

Fig 12: Effect of an increasing level of on


the load line and the Q-point.

Chapter 5

EFFECT OF ON THE Q-POINT

Fig 13: Movement of the Q-point with


increasing level of .

Chapter 5

EXAMPLE

Chapter 5

EMITTER-BIAS CONFIGURATION
The dc bias network of Fig 14
contains an emitter resistor to
improve stability level over that of
the fixed-bias configuration.

The more stable a configuration, the


less its response will change due to
undesirable changes in temperature
and parameter.

Fig 14: BJT bias circuit with emitter resistor.

Chapter 5

BASE-EMITTER LOOP
From Kirchhoffs voltage law:
VCC I B RB VBE I E RE 0

Since:

IE = ( + 1)IB

VCC I B RB VBE ( 1 )I B RE 0

Solving for :
VCC VBE
IB
RB ( 1)RE

Note: The only difference between this


equation for and that obtained for fixedbias configuration is the term ( + 1)

Fig 15: Base-emitter loop.

Chapter 5

COLLECTOR-EMITTER LOOP
From Kirchhoffs voltage law:
IE RE VCE IC RC VCC 0

Since:

IE IC
VCE VCC IC(RC RE )

Also:
VE I E RE
VC VCE VE VCC I C RC
VB VCC I B RB VBE VE
Fig 16: Collector-emitter loop.

Chapter 5

IMPROVED BIASED STABILITY


Stability refers to a condition in which the currents and voltages remain fairly
constant over a wide range of temperatures and transistor Beta () values.
Adding RE to the emitter improves the stability of a transistor.

SATURATION LEVEL
The collector saturation level (or maximum collector current)
for an emitter-bias design can be determined using same
approach as the fixed-bias configuration.
Apply short circuit between collector-emitter terminals
shown in Fig 17.
Calculate the resulting collector current:
VCE 0 V
VCC
I Csat
RC RE

Fig 17: Determining for


the emitter-bias circuit

Chapter 5

LOAD-LINE ANALYSIS
The endpoints can be determined
from the load line
VCEcutoff:

VCE VCC
IC 0 mA

ICsat:

VCE 0 V
IC

VCC
RC RE

Fig 18: Load line for the


emitter-bias configuration

Chapter 5

EXAMPLE

Chapter 5

ANSWER

Chapter 5

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